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At least 721 records · Page 40

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NASA NTRS1986

Simulation studies for surfaces and materials strength

During this reporting period three investigations were carried out. The first area of research concerned the analysis of the structure-energy relationship in small clusters. This study is very closely related to the improvement of the potential energy functions which are suitable and simple enough to be used in atomistic simulation studies. Parameters obtained from ab initio calculations for dimers and trimers of Al were used to estimate energetics and global minimum energy structures of clusters continuing up to 15 Al atoms. The second research topic addressed modeling of the collision process for atoms impinging on surfaces. In this simulation study qualitative aspects of the O atom collision with a graphite surface were analyzed. Four different O/graphite systems were considered and the aftermath of the impact was analyzed. The final area of investigation was related to the simulation of thin amorphous Si films on crystalline Si substrates. Parameters obtained in an earlier study were used to model an exposed amorphous Si surface and an a-Si/c-Si interface. Structural details for various film thicknesses were investigated at an atomistic level.

Halicioglu, T.↗

NASA NTRS1987

Mechanical strength and tribological behavior of ion-beam deposited boron nitride films on non-metallic substrates

An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO2), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO2 substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO2 and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO2.

Miyoshi, Kazuhisa↗

NASA NTRS1988

Three-dimensional models of conventional and vertical junction laser-photovoltaic energy converters

Three-dimensional models of both conventional planar junction and vertical junction photovoltaic energy converters have been constructed. The models are a set of linear partial differential equations and take into account many photoconverter design parameters. The model is applied to Si photoconverters; however, the model may be used with other semiconductors. When used with a Nd laser, the conversion efficiency of the Si vertical junction photoconverter is 47 percent, whereas the efficiency for the conventional planar Si photoconverter is only 17 percent. A parametric study of the Si vertical junction photoconverter is then done in order to describe the optimum converter for use with the 1.06-micron Nd laser. The efficiency of this optimized vertical junction converter is 44 percent at 1 kW/sq cm.

Heinbockel, John H.↗

NASA NTRS1987

Mechanical strength and tribological behavior of ion-beam-deposited boron nitride films on non-metallic substrates

Miyoshi, Kazuhisa↗

NASA NTRS1988

Ultraviolet properties of IRAS-selected Be stars

New IUE observations were obtained of 35 Be stars from a list of stars which show excess infrared fluxes in IRAS data. The IRAS-selected Be stars show larger C IV and Si IV equivalent widths than other Be stars. Excess C IV and Si IV absorption seems to be independent of spectral type for IRAS-selected Be stars later than spectral type B4. This is interpreted as evidence for a possible second mechanism acting in conjunction with radiation pressure for producing the winds in Be stars. No clear correlation of IR excess of v sin i with C IV or Si IV equivalent widths is seen, although a threshold for the occurrence of excess C IV and Si IV absorption appears at a v sin i of 150 km/sec.

Bjorkman, Karen S.↗

NASA NTRS1988

The nebular velocity structure of AG Pegasi

Ultraviolet emission of the symbiotic star AG Peg which shows periodic variations in the central radial velocity and total flux of several emission lines was studied. Seventeen high dispersion archival SWP spectra covering the period from 1978.6 to 1986.9 were examined. Gaussian profiles were fit to each of the narrow emission lines of O III, N III, O IV, Si IV, C III, and Si III. Radial velocity curves with an amplitude of 15 to 20 km/sec were measured for the N III 1748.6 A, 1749.7 A lines, the O III 1660.8 A, 1666.2 A lines, and the C III 1908.7 A line. The O IV and Si IV lines were generally too weakly exposed to derive reliable velocity curves, while the Si III line was often overexposed. The N III, O III, and C III line fluxes are correlated with phase. These line flux and velocity changes are consistent with formation of the lines near the red giant.

Oliversen, Nancy A.↗

NASA NTRS1989

Ultraviolet observations of interstellar absorption lines toward SN 1987A

High-dispersion IUE echelle spectra of SN 1987A were averaged in order to obtain UV absorption-line profiles of the highest possible quality in the direction of SN 1987A. The profiles for Si IV and C IV are quite similar and have much less structure than the Al III profile. On relating column densities, while the C IV and Si IV ratio is relatively constant over the 0-100 km/s velocity range, the C IV to Al III and Si IV to Al III ratios vary by nearly a factor of 10. This suggests that the C IV and Si IV along this sight line in the Galaxy and its halo may have a common origin which differs from that for Al III.

Savage, Blair D.↗

NASA NTRS1989

Radiation dependence of inverter propagation delay from timing sampler measurements

A timing sampler consisting of 14 four-stage inverter-pair chains with different load capacitances was fabricated in 1.6-micron n-well CMOS and irradiated with cobalt-60 at 10 rad(Si)/s. For this CMOS process the measured results indicate that the rising delay increases by about 2.2 ns/Mrad(Si) and the falling delay increase is very small, i.e., less than 300 ps/Mrad(Si). The amount of radiation-induced delay depends on the size of the load capacitance. The maximum value observed for this effect was 5.65 ns/pF-Mrad(Si). Using a sensitivity analysis, the sensitivity of the rising delay to radiation can be explained by a simple timing model and the radiation sensitivity of dc MOSFET parameters. This same approach could not explain the insensitivity of the falling delay to radiation. This may be due to a failure of the timing model and/or trapping effects.

Buehler, M. G.↗

NASA NTRS1990

Study of diamond film growth and properties

The objective was to study diamond film growth and its properties in order to enhance the laser damage threshold of substrate materials. Calculations were performed to evaluate laser induced thermal stress parameter, R(sub T) of diamond. It is found that diamond has several orders of magnitude higher in value for R(sub T) compared to other materials. Thus, the laser induced damage threshold (LIDT) of diamond is much higher. Diamond films were grown using a microwave plasma enhanced chemical vapor deposition (MPECVD) system at various conditions of gas composition, pressure, temperature, and substrate materials. A 0.5 percent CH4 in H2 at 20 torr were ideal conditions for growing of high quality diamond films on substrates maintained at 900 C. The diamond films were polycrystalline which were characterized by scanning electron microscopy (SEM) and Raman scattering spectroscopy. The top surface of the growing film is always rough due to the facets of polycrystalline film while the back surface of the film replicates the substrate surface. An analytical model based on two dimensional periodic heat flow was developed to calculate the effective in-plane (face parallel) diffusivity of a two layer system. The effective diffusivity of diamond/silicon samples was measured using a laser pulse technique. The thermal conductivity of the films was measured to be 13.5 W/cm K, which is better than that of a type Ia natural diamond. Laser induced damage experiments were performed on bare Si substrates, diamond film coated Si, and diamond film windows. Significant improvements in the LIDT were obtained for diamond film coated Si compared to the bare Si.

Albin, Sacharial↗

NASA NTRS1991

Annealing characteristics of irradiated hydrogenated amorphous silicon solar cells

It was shown that 1 MeV proton irradiation with fluences of 1.25E14 and 1.25E15/sq cm reduces the normalized I(sub SC) of a-Si:H solar cell. Solar cells recently fabricated showed superior radiation tolerance compared with cells fabricated four years ago; the improvement is probably due to the fact that the new cells are thinner and fabricated from improved materials. Room temperature annealing was observed for the first time in both new and old cells. New cells anneal at a faster rate than old cells for the same fluence. From the annealing work it is apparent that there are at least two types of defects and/or annealing mechanisms. One cell had improved I-V characteristics following irradiation as compared to the virgin cell. The work shows that the photothermal deflection spectroscopy (PDS) and annealing measurements may be used to predict the qualitative behavior of a-Si:H solar cells. It was anticipated that the modeling work will quantitatively link thin film measurements with solar cell properties. Quantitative predictions of the operation of a-Si:H solar cells in a space environment will require a knowledge of the defect creation mechanisms, defect structures, role of defects on degradation, and defect passivation and annealing mechanisms. The engineering data and knowledge base for justifying space flight testing of a-Si:H alloy based solar cells is being developed.

Payson, J. S.↗

NASA NTRS1991

The status of lightweight photovoltaic space array technology based on amorphous silicon solar cells

Ultralight, flexible photovoltaic (PV) array of amorphous silicon (a-Si) was identified as a potential low cost power source for small satellites. A survey was conducted of the status of the a-Si PV array technology with respect to present and future performance, availability, cost, and risks. For existing, experimental array blankets made of commercial cell material, utilizing metal foil substrates, the Beginning of Life (BOL) performance at Air Mass Zero (AM0) and 35 C includes total power up to 200 W, power per area of 64 W/sq m and power per weight of 258 W/kg. Doubling of power per weight occurs when polyimide substrates are used. Estimated End of Life (EOL) power output after 10 years in a nominal low earth orbit would be 80 pct. of BOL, the degradation being due to largely light induced effects (-10 to -15 pct.) and in part (-5 pct.) to space radiation. Predictions for the year 1995 for flexible PV arrays, made on the basis of published results for rigid a-Si modules, indicate EOL power output per area and per weight of 105 W/sq m and 400 W/kg, respectively, while predictions for the late 1990s based on existing U.S. national PV program goals indicate EOL values of 157 W/sq m and 600 W/kg. Cost estimates by vendors for 200 W ultralight arrays in volume of over 1000 units range from $100/watt to $125/watt. Identified risks include the lack of flexible, space compatible encapsulant, the lack of space qualification effort, recent partial or full acquisitions of US manufacturers of a-Si cells by foreign firms, and the absence of a national commitment for a long range development program toward developing of this important power source for space.

Hanak, Joseph J.↗

NASA NTRS1990

1.00 MeV proton radiation resistance studies of single-junction and single gap dual-junction amorphous-silicon alloy solar cells

A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.

Abdulaziz, Salman↗

NASA NTRS1992

Visible luminescence from silicon wafers subjected to stain etches

Etching of Si in a variety of solutions is known to cause staining. These stain layers consist of porous material similar to that produced by anodic etching of Si in HF solutions. In this work, photoluminescence peaked in the red from stain-etched Si wafers of different dopant types, concentrations, and orientations produced in solutions of HF:HNO3:H2O was observed. Luminescence is also observed in stain films produced in solutions of NaNO2 in HF, but not in stain films produced in solutions of CrO3 in HF. The luminescence spectra are similar to those reported recently for porous Si films produced by anodic etching in HF solutions. However, stain films are much easier to produce, requiring no special equipment.

Fathauer, R. W.↗

NASA NTRS1992

Far-infrared observations of M17SW - The clumpy structure of the photodissociation region

Forbidden O I 63-micron and forbidden Si II 35-micron fine-structure line emission in M17SW was mapped, and the intensities of the forbidden O I 63 and 146 microns, forbidden Si II 35 microns, and forbidden C II 158 microns were measured at four positions. New 50- and 100-micron continuum maps of the M17SW cloud at comparable resolution to the FIR line observations are presented. Analysis in terms of a homogeneous model yields an incident UV field of 56,000 habings, a density of 30,000 cu cm, and a temperature of about 300 K for the atomic gas. It is concluded that the M17SW photodissociation region is clumpy in nature. The observed forbidden Si II and high-J CO imply the presence of high-density clumps. The clumps dominate the emission in the forbidden O I, Si II, and high-level CO lines, while the forbidden C II, C I, and low-level CO arise mostly in the interclump gas. The extended (about 15 pc) forbidden C II and forbidden C I emission is attributed to the halo gas.

Meixner, Margaret↗

NASA NTRS1992

Highly ionized atoms toward HD 93521

Results are reported from the HST High Resolution Spectrograph observations of absorption features of C IV and Si IV in the spectrum of the high-latitude O star HD 93521 (l = 183 deg; b = 62 deg). A comparison of Si IV and C IV profiles showed that the FWHM of both features is about 50 km/sec, in contrast to the 7 km/sec found for one of the several S II features. The line centers for C IV and Si IV are at v = -67 km/sec and -60 km/sec, respectively. As the interval velocity decreases from 90 to 50 km/sec, the Si IV/C IV ratio of the column density per unit velocity interval increases from about 0.2 to 0.4. The result is qualitatively consistent with a fountain model of Shapiro and Benjamin (1991) if the slower gas has cooled and recombined more than the faster gas.

Spitzer, Lyman, Jr.↗

NASA NTRS1992

SiC particles from asymptotic giant branch stars - Mg burning and the s-process

The question of whether isotopically anomalous SiC particles found in meteorites originate in AGB stars is addressed. It is shown that if the peak helium shell flash temperatures of massive (6-9 solar masses) stars are about 10 percent larger than they are normally assumed to be, alpha particle reactions with the magnesium will become significant. Then the (Mg-29)(alpha, n)Si-29 reaction produces a large excess of Si-29. With a light element nuclear reaction network, the evolution of the silicon isotopic composition during AGB evolution is calculated. It is found that the experimentally determined correlation between excess Si-29 and excess Si-30 in SiC particles from carbonaceous chondrites can indeed be naturally produced in this way. It is suggested that if the large isotopically anomalous SiC particles carrying nearly pure-process krypton and xenon do indeed originate in AGB stars, those stars were massive and had peak shell flash temperatures near 450 KM.

Brown, Lawrence E.↗

NASA NTRS1990

Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x 10(exp 4) cm(sup -1) for photon energies above 0.2 eV. CrSi2 is of potential utility for detection at photon energies above approximately 0.3 eV.

Mahan, John E.↗

NASA NTRS1992

Electrolytic smelting of lunar rock for oxygen, iron, and silicon

Preliminary studies of the electrochemical properties of silicate melts such as those available from heating of lunar mare soils indicate that conductivities are high enough for design of a practical electrolytic cell. The nature and kinetics of the electrode reactions, which involve reduction of Fe(++) and Si(IV) and oxidation of silicate anions as the primary, product-forming reactions, are also satisfactory. A survey of the efficiencies for production (amount of product for a given current) of O2, Fe(sup 0), and Si(sup 0) as functions of potential and of electrolyte composition indicate that conditions can be chosen to yield high production efficiencies. We also conclude that electronic conductivity does not occur to a significant extent. Based on these data, a cell with electrodes of 30 sq m in area operating between 1 and 5V with a current between 1.6 and 3.5(10)(exp 5) A for a mean power requirement of 0.54 MW and total energy use of approximately 13 MWhr per 24-hr day would produce 1 ton of O2, 0.81 ton of Fe(sup 0), 0.65 ton of Si(sup 0) (as Fe(sup 0)-Si(sup 0) alloy), and about 3.5 tons of silicate melt of altered composition per 24 hr. Adjustable distance between electrodes could offer flexibility with respect to feedstock and power source.

Haskin, Larry A.↗