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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 721 records · Page 40

A Study on the Impact of Temperature-Dependent Ferroelectric Switching Behavior in 3D Memory Architecture

The flourishing development of neural networks that require exponentially growing amounts of data has presented an elevated demand for memory footprint. To address this, researchers have been exploring hardware accelerators with innovative memory architectures like 3D memory. These 3D memory architectures offer enhanced storage capacity and processing capabilities, at a cost of rising on-chip temperature during operation. Hafnium Zirconium Oxide (HZO) based Ferroelectric Random Access Memory (FeRAM) is a promising nonvolatile memory candidate in neural network hardware accelerators for its outstanding write performance and reliability. However, its implementation in the architecture regarding the temperature-dependent ferroelectric switching behavior has not been well studied. In this work, we study the thermal impacts on polarization switching through experimental devices and simulation results. We conduct the circuit and architecture-level simulations to showcase that one can exploit this temperature rise to reduce FeRAM's write voltage and write energy due to its unique temperature-activated polarization switching mechanisms. As the on-chip temperature increases to 351K (ambient temperature at 300K) due to neural network workloads, the access energy per bit can be reduced by 27.6% when a dynamic write voltage is applied.

36 MATERIALS SCIENCE↗

Use of vacuum tubes in test instrumentation for measuring characteristics of fast high-voltage semiconductor devices

Circuits are described that permit measurement of fast events occurring in power semiconductors. These circuits were developed for the dynamic characterization of transistors used in inductive-load switching applications. Fast voltage clamping using vacuum diodes is discussed, and reference is made to a unique circuit that was built for performing nondestructive, reverse-bias, second-breakdown tests on transistors.

Berning, D.↗

Frequency switch keyed oscillator

Oscillator changes resonant frequency of the LC tank circuit by shunting one of a pair of parallel capacitors. Technique reduces amount of hardware required to interrogate and control remote systems.

Katchis, L.↗

Testing of Diode-Clamping in an Inductive Pulsed Plasma Thruster Circuit

Testing of a 5.5 kV silicon (Si) diode and 5.8 kV prototype silicon carbide (SiC) diode in an inductive pulsed plasma thruster (IPPT) circuit was performed to obtain a comparison of the resulting circuit recapture efficiency,eta(sub r), defined as the percentage of the initial charge energy remaining on the capacitor bank after the diode interrupts the current. The diode was placed in a pulsed circuit in series with a silicon controlled rectifier (SCR) switch, and the voltages across different components and current waveforms were collected over a range of capacitor charge voltages. Reverse recovery parameters, including turn-off time and peak reverse recovery current, were measured and capacitor voltage waveforms were used to determine the recapture efficiency for each case. The Si fast recovery diode in the circuit was shown to yield a recapture efficiency of up to 20% for the conditions tested, while the SiC diode further increased recapture efficiency to nearly 30%. The data presented show that fast recovery diodes operate on a timescale that permits them to clamp the discharge quickly after the first half cycle, supporting the idea that diode-clamping in IPPT circuit reduces energy dissipation that occurs after the first half cycle

Toftul, Alexandra↗

MCTs and IGBTs - A comparison of performance in power electronic circuits

There is a continuous demand for improvements in the quality of switching power devices, such as higher switching frequency, higher withstand voltage capability, larger current-handling capability, and lower conduction losses. However, for single-conduction-mechanism devices (SCRs, GTOs, BJTs, FETs), possessing all these features is probably unrealizable for physical reasons. An attractive solution appears to be double-mechanism devices, in which the features of both a minority carrier device (BJT or SCR) and a majority carrier device (MOSFET) are embedded. Both IGBTs (insulated-gate bipolar transistors) and MCTs (MOS-controlled thyristors) belong to this family of double-mechanism devices and promise to have a major impact on converter circuit signs. The authors deal with the major features of these two devices, pointing out those that are most critical to the design of converter topologies. In particular, the two devices have been tested both in a chopper and in two resonant link converter topologies, and the experimental results are reported.

Sul, S. K.↗

Strongly Correlated Aromatic Molecular Conductor

Strongly correlated electronic molecules open the way for strong coupling between charge, spin, and lattice degrees of freedom to enable interdisciplinary fields, such as molecular electronic switches and plasmonics, spintronics, information storage, and superconducting circuits. However, despite exciting computational predictions and promising advantages to prepare flexible geometries, the electron correlation effect in molecules has been elusive. In this paper, the electron correlation effects of molecular plasmonic films are reported to uncover their coupling of charge, spin, lattice, and orbital for the switchable metal-to-insulator transition under external stimuli, at which the simultaneous transition occurs from the paramagnetic, electrical, and thermal conducting state to the diamagnetic, electrical, and thermal insulating state. In addition, density functional theory calculation and spectroscopic studies are combined to provide the mechanistic understanding of electronic transitions and molecular plasmon resonance observed in molecular conducting films. The self-assembled molecular correlated conductor paves the way for the next generation integrated micro/nanosystems.

42 ENGINEERING↗

Topological current divider in a Chern insulator junction

A Chern insulator is a two-dimensional material that hosts chiral edge states produced by the combination of topology with time reversal symmetry breaking. Such edge states are perfect one-dimensional conductors, which may exist not only on sample edges, but on any boundary between two materials with distinct topological invariants (or Chern numbers). Engineering of such interfaces is highly desirable due to emerging opportunities of using topological edge states for energy-efficient information transmission. Here, we report a chiral edge-current divider based on Chern insulator junctions formed within the layered topological magnet MnBi 2 Te 4 . We find that in a device containing a boundary between regions of different thickness, topological domains with different Chern numbers can coexist. At the domain boundary, a Chern insulator junction forms, where we identify a chiral edge mode along the junction interface. We use this to construct topological circuits in which the chiral edge current can be split, rerouted, or switched off by controlling the Chern numbers of the individual domains. Our results demonstrate MnBi 2 Te 4 as an emerging platform for topological circuits design.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Dynamic metamaterial aperture for microwave imaging

We present a dynamic metamaterial aperture for use in computational imaging schemes at microwave frequencies. The aperture consists of an array of complementary, resonant metamaterial elements patterned into the upper conductor of a microstrip line. Each metamaterial element contains two diodes connected to an external control circuit such that the resonance of the metamaterial element can be damped by application of a bias voltage. Through applying different voltages to the control circuit, select subsets of the elements can be switched on to create unique radiation patterns that illuminate the scene. Spatial information of an imaging domain can thus be encoded onto this set of radiation patterns, or measurements, which can be processed to reconstruct the targets in the scene using compressive sensing algorithms. We discuss the design and operation of a metamaterial imaging system and demonstrate reconstructed images with a 10:1 compression ratio. Dynamic metamaterial apertures can potentially be of benefit in microwave or millimeter wave systems such as those used in security screening and through-wall imaging. In addition, feature-specific or adaptive imaging can be facilitated through the use of the dynamic aperture.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

An Analytical Model for Predicting Turn-ON Overshoot in Normally-OFF GaN HEMTs

Recently, a major challenge in the adoption of wide bandgap semiconductors for power electronic applications is the need to trade device performance for device safety. In this article, methods for predicting gate voltage overshoot in normally-OFF gallium nitride (GAN) high electron mobility transistors (HEMTs) are derived in order to deliver optimal device performance. Two models are proposed; a simple, yet less accurate second order model and a complex, yet more accurate fourth order model. These models allow for the calculation of gate resistances necessary for a desired amount of gate voltage overshoot. The nonlinear capacitances of the device are considered in the analysis. The models are validated with an experimental double-pulse tester. Furthermore, these newly developed models allow design engineers to extract the best possible performance of commercially available GaN devices while keeping the devices in their safe-operating region.

42 ENGINEERING↗

Hybrid solid state switch replaces motor- driven power switch

Hybrid solid state switch replaces existing motor-driven power switches used on spacecraft. It uses a transistor circuit to limit the open circuit voltage and allow small relay contacts to handle high transient currents at reasonable cycle life.

Booth, R. A.↗

Solid state phase detector replaces bulky transformer circuit

Miniature solid state phase detector using MOSFETs is used in a phase lock loop with a sun-bit detector in an integrated data-link circuit. This replaces bulky transformer circuits. It uses an inverter amplifier, a modulator switch, and a buffer amplifier.

Moberly, C. L.↗

Thermal excursion can cause bond problems.

The purpose of this paper is to illustrate the failure mode caused by thermal deformation and how thermal deformation affects bond integrity. Wege bonding in small-signal transistors, microcircuits and LSI circuits is the subject of this work. Repeated switching of the devices between high and low power at a rate that allows thermal expansion and contraction in the interconnecting wire causes the wire to flex at the point of reduced cross-sectional area until finally the wire breaks due to metal fatigue. It was observed that the thermal deformation was related to many factors such as device power dissipation, current density in the wire, wi *e dress and length, thermal time constant and frequency of operation.

Nowakowski, M. F.↗

Precision voltage division without precision parts

Active voltage divider applies different logic signals to field-effect transistor switches to generate various voltage levels at output. Circuit is compact and reduces errors from drifting component values.

Strange, M. G.↗

Advanced Communications Technology Satellite (ACTS)

The NASA Advanced Communications Technology Satellite (ACTS) was conceived to help maintain U.S. leadership in the world's communications-satellite market. This experimental satellite is expected to be launched by NASA in 1992 and to furnish the technology necessary for establishing very small aperture terminal digital networks which provide on-demand full-mesh connectivity, and 1.544-MBPS services with only a single hop. Utilizing on-board switching and processing, each individual voice or data circuit can be separately routed to any location in the network. This paper provides an overview of the ACTS and discusses the value of the technology for future communications systems.

Gedney, Richard T.↗

A low-mass faraday cup experiment for the solar wind

Faraday cups have proven to be very reliable and accurate instruments capable of making 3-D velocity distribution measurements on spinning or 3-axis stabilized spacecraft. Faraday cup instrumentation continues to be appropriate for heliospheric missions. As an example, the reductions in mass possible relative to the solar wind detection system about to be flown on the WIND spacecraft were estimated. Through the use of technology developed or used at the MIT Center for Space Research but were not able to utilize for WIND: surface-mount packaging, field-programmable gate arrays, an optically-switched high voltage supply, and an integrated-circuit power converter, it was estimated that the mass of the Faraday Cup system could be reduced from 5 kg to 1.8 kg. Further redesign of the electronics incorporating hybrid integrated circuits as well as a decrease in the sensor size, with a corresponding increase in measurement cycle time, could lead to a significantly lower mass for other mission applications. Reduction in mass of the entire spacecraft-experiment system is critically dependent on early and continual collaborative efforts between the spacecraft engineers and the experimenters. Those efforts concern a range of issues from spacecraft structure to data systems to the spacecraft power voltage levels. Requirements for flight qualification affect use of newer, lighter electronics packaging and its implementation; the issue of quality assurance needs to be specifically addressed. Lower cost and reduced mass can best be achieved through the efforts of a relatively small group dedicated to the success of the mission. Such a group needs a fixed budget and greater control over quality assurance requirements, together with a reasonable oversight mechanism.

Lazarus, A. J.↗

Integrated-Circuit Controller For Brushless dc Motor

Generic circuit performs commutation-logic and power-switching functions for control of brushless dc motor. Controller includes commutation-logic and associated control circuitry, power supply, and inverters containing power transistors. Major advantages of controller are size, weight, and power consumption can be made less than other brushless-dc-motor controllers.

Le, Dong Tuan↗