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At least 721 records · Page 40
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Ultraviolet spectral morphology of the O stars - The remarkable luminosity dependence of the Si IV stellar wind effect

An extensive survey of ultraviolet O type spectra, by means of high-resolution data from the International Ultraviolet Explorer archives, shows a strong correlation between both the photospheric and stellar wind features, and the optical spectral types. In particular, the stellar wind effect in the Si IV resonance doublet displays a strong luminosity dependence which has not been completely described before: there is no effect anywhere on the main sequence, but it develops gradually through the intermediate luminosity classes into a full P Cygni profile in the supergiants. This behavior is in sharp contrast to that of the C IV and N V, which have strong P Cygni profiles throughout most of the O type domain, including the main sequence. The Si IV effect simultaneously provides a sensitive classification criterion and poses an outstanding problem for detailed astrophysical interpretation. In addition, a new emission feature at 1574 A, possibly due to N III or to N IV forbidden line, is reported.

Walborn, N. R.↗
NASA NTRS1985

Measurements of the fragmentation of (40)Ar, (28)Si and (12)C in CH2C and H targets between 300 and 1500 MeV/nuc at the Bevalac

Studies of the fragmentation of various nuclei in CH2 and C targets were continued with the objective of obtaining cross sections in hydrogen for use in the cosmic ray propagation problem. New measurements include Fe-56. Measurements were made at 6 energies between 300 and 1700 MeV/nuc. C-12 measurements were made at six energies. Si-28 measurements were made at three energies and measurements were made at two energies. New data on C.-12 Si-28 and AR-44 nuclei are given. The data are compare it with the earlier semi-empirical predictions.

Webber, W. R.↗
NASA NTRS1984

Ionic charge states of N, Ne, Mg, Si and S in solar energetic particle events

The mean ionic charges and source-region temperatures of flare-accelerated N, Ne, Mg, Si and S in three large solar-energetic-particle events during 1978-1979 are determined from ISEE-3 observations, extending the findings of Hovestadt et al. (1981) and Gloeckler et al. (1981) for C, He, O, and Fe. The results are presented in tables and graphs, and the charge states are shown to correspond to different source temperatures even in the same flare, assuming equilibration in the hot plasma. The electron temperatures range from 2 x 10 to the 6th K for C, N, O, Si, and S, 4 x 10 to the 6th K for Ne and Fe, and 7 x 10 to the 6th K for Mg. The possibility that these temperature inconsistencies reflect different stages in the approach to equilibrium is considered.

Luhn, A.↗
NASA NTRS1986

Passivation of Si solar cells by hetero-epitaxial compound semiconductor coatings

A development status evaluation is made for high efficiency Si solar cells, with emphasis on the suppression of the deleterious effects of surface recombination. ZnS(0.9)Se(0.1) and GaP are identified as candidates for the reduction of surface recombination. Attention is given to methods developed for the deposition of heteroepitaxial compounds designed to block minority carrier transport to the Si solar cell surface without interfering with the majority carrier flow.

Vernon, S. M.↗
NASA NTRS1987

Si(111) cleavage and the (2 x 1) reconstruction process

Using a computer simulation technique with a semiempirical potential, a Si crystal was cleaved along the (111) plane. The pi-bonded chain structural features of the Si(111) cleavage surface are observed and found to be a consequence of the dynamics of this cleavage process and seem not to be influenced by the final energetics.

Pearson, E. M.↗
NASA NTRS1987

Investigation of GaAs/Al(x)Ga(1-x)As and In(y)Ga(1-y)As/GaAs superlattices on Si substrates

The optical properties of lattice-matched GaAs/Al(x)Ga(1-x)As and In(y)Ga(1-y)As/GaAs strained-layer superlattices grown on Si substrates have been studied using the photoreflectance technique. These preliminary results show that good quality III-IV epilayers can be grown on Si. The experimental data were compared with calculations based on the envelope-function approximation and fitted to the third-derivative functional form of reflectance modulation theory.

Reddy, U. K.↗
NASA NTRS1987

Growth and characterization of cubic SiC single-crystal films on Si

Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the SiC films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room-temperature electron mobilities up to 520 sq cm/V-s (at an electron carrier concentration of 5 x 10 to the 16th/cu cm) were measured. Finally, a number of parameters believed to be important in the growth process were investigated, and some discussion is given of their possible effects on the film characteristics.

Powell, J. Anthony↗
NASA NTRS1987

Absolute oscillator strengths for 108 lines of Si I between 163 and 410 nanometers

Measurements of neutral silicon oscillator strengths (f-values) obtained by absorption and emission techniques have been combined using the numerical procedure of Cardon et al. (1979) to produce 108 f-values for the Si I lines between 163 and 410 nm. Beam-foil-lifetime measurements were employed to determine the absolute scale. The present measurements have uncertainties of about 0.07 dex (+ or - 16 percent) at the 1-sigma level of confidence. Good agreement is obtained between the results and previous data. The data also provide upper limits for the f-values of 22 other lines and information on the lifetimes for 36 levels in Si I.

Smith, Peter L.↗
NASA NTRS1988

Secondary ion mass spectrometry study of ex situ annealing of epitaxial GaAs grown on Si substrates

Samples of epitaxial GaAs grown on (100) Si substrates using molecular beam epitaxy were annealed at four different temperatures, from 800 to 950 C. Following annealing, the samples were analyzed using secondary ion mass spectrometry. Depth profiles of Ga, As, and Si reveal optimum conditions for annealing, and place a lower limit on a damage threshold for GaAs/Si substrates.

Radhakrishnan, G.↗
NASA NTRS1987

Binary synaptic connections based on memory switching in a-Si:H for artificial neural networks

A scheme for nonvolatile associative electronic memory storage with high information storage density is proposed which is based on neural network models and which uses a matrix of two-terminal passive interconnections (synapses). It is noted that the massive parallelism in the architecture would require the ON state of a synaptic connection to be unusually weak (highly resistive). Memory switching using a-Si:H along with ballast resistors patterned from amorphous Ge-metal alloys is investigated for a binary programmable read only memory matrix. The fabrication of a 1600 synapse test array of uniform connection strengths and a-Si:H switching elements is discussed.

Thakoor, A. P.↗
NASA NTRS1989

Molecular-Beam Epitaxy Of CrSi2 on Si(111)

Crystalline layers grown in commercial apparatus. Experiments show CrSi2 grown on (111) face of single-crystal Si substrate by molecular-beam epitaxy. Epitaxial CrSi2 produced thus far not in desired single-crystal form. Because CrSi2 semiconductor with band gap of 0.3 eV, experimental process potential for monolitic integration of microelectronic devices based on CrSi2 (e.g., infrared detectors) with signal-processing circuitry based on Si.

Fathauer, Robert W.↗
NASA NTRS1988

Dopant redistribution during the solid-phase growth of CrSi2 on Si(100)

The distribution pattern of As, B, and P dopants during the solid-phase growth of CrSi2 on Si(100) was investigated using Rutherford backscattering spectroscopy and SIMS. The results demonstrated that all three dopants did redistribute during the formation of CrSi2 layers; however, the nature of redistribution was different for different dopants. While B and P were transported from the Si substrate to the surface of the growing CrS2 layer, As accumulated at the CrSi2/Si interface. The formation of silicide was found to be inhibited by large concentrations of As. A model was developed to explain these results.

Rockett, A.↗
NASA NTRS1988

Nucleation and growth of CrSi2 on Si(111)

The nucleation and growth of CrSi2 on Si(111) by MBE and solid-phase epitaxy (SPE), was investigated using SEM and TEM observations of 2-mm-thick layers grown under a variety of conditions, including the use of a CoSi2 buffer. During growth, the wafers were monitored in situ using reflection high-energy electron diffraction. Island growth was observed, with islands found to nucleate with three epitaxial orientations. The morphology of CrSi2 islands was found to be affected by the degree and direction of substrate misorientation, the growth technique, and the use of CoSi2 buffer. However, the reconstruction of the Si surface does not appear to be an important factor in controlling SPE growth.

Fathauer, R. W.↗
NASA NTRS1989

High-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

A high-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well laser on Si substrates has been demonstrated for the first time by a hybrid growth of migration-enhanced molecular beam epitaxy followed by metalorganic vapor phase epitaxy. The quantum well laser showed an output power of more than 400 mW per facet under pulsed conditions. A room-temperature threshold current of 300 mA was obtained with a differential quantum efficiency of 40 percent without facet coating. The threshold current density was 550 A/sq cm for a cavity length of 500 microns. These results show the highest peak power reported to date for low-threshold lasers on Si substrates. The full width at half maximum of the far-field pattern parallel to the junction was 6 deg. Threshold current densities as low as 250 A/sq cm were obtained for lasers on GaAs substrates.

Kim, Jae-Hoon↗
NASA NTRS1988

Optical emission diagnostics of electron cyclotron resonance and glow discharge plasmas for a-Si:H and a-SiC:H film depositions

It is demonstrated that the steady-state and kinetic characteristics of ECR (electron cyclotron resonance) and RF glow discharge plasmas can be readily monitored by OES (optical emission spectroscopy) in real time during a-Si:H and a-SiC:H film depositions using an OMA detection system. The ECR and RF glow discharge plasmas used for a-Si:H and a-SiC:H film depositions were studied by monitoring the emission of SiH(asterisk), H(asterisk), H(asterisk)2, and CH(asterisk) excited states. The OES of the ECR plasma shows a strong emission at 434 nm from H(asterisk), which is not detectable in the glow discharge plasma. Steady-state OES studies have established preliminary correlations between SiH(asterisk) and CH(asterisk) emission intensities and the film deposition rate. Transient OES spectra of SiH4 and CH4 plasmas have shown different kinetics in SiH(asterisk) and CH(asterisk) emission intensities. Transient studies of the SiH(asterisk) emission intensity have indicated that additional mechanisms for producing the SiH(asterisk) species become evident in hydrogen-diluted silane plasmas.

Yang, C. L.↗
NASA NTRS1990

The Space Telescope SI C&DH system

The Hubble Space Telescope Scientific Instrument Control and Data Handling Subsystem (SI C&DH) is designed to interface with five scientific instruments of the Space Telescope to provide ground and autonomous control and collect health and status information using the Standard Telemetry and Command Components (STACC) multiplex data bus. It also formats high throughput science data into packets. The packetized data is interleaved and Reed-Solomon encoded for error correction and Pseudo Random encoded. An inner convolutional coding with the outer Reed-Solomon coding provides excellent error correction capability. The subsystem is designed with the capacity for orbital replacement in order to meet a mission life of fifteen years. The spacecraft computer and the SI C&DH computer coordinate the activities of the spacecraft and the scientific instruments to achieve the mission objectives.

Gadwal, Govind R.↗
NASA NTRS1989

Electron cyclotron resonance deposition and plasma diagnostics of a-Si:H and a-C:H films

Amorphous silicon (a-Si:H) and amorphous carbon (a-C:H) films deposited by electron cyclotron resonance (ECR) microwave plasma-enhanced chemical vapor deposition are discussed. It is shown that the ECR microwave plasma deposition technique can produce a-Si:H films with material qualities similar to and with a deposition rate one order of magnitude higher than for films deposited by radio-frequency glow discharge. The ECR-deposited a-C:H films are characterized by fluorescence, IR, and Raman spectroscopy. In situ optical emission spectroscopy plasma diagnostics indicates that ECR plasmas have a strong emission at 434 nm, which indicates a higher chemical reactivity than radio-frequency glow discharge plasmas. The radio frequency bias to the substrate is found to play a critical role in determining the film structure and the carbon bonding configuration of ECR-deposited a-C:H films.

Shing, Y. H.↗
NASA NTRS1990

Some optical and electron microscope comparative studies of excimer laser-assisted and nonassisted molecular-beam epitaxically grown thin GaAs films on Si

The quality of GaAs thin films grown via MBE under pulsed excimer laser irradiation on Si substrates is examined in both laser-irradiated and nonirradiated areas using Raman scattering, Rayleigh scattering, and by photoluminescence (PL), as a function of temperature, and by TEM. The temperature dependence of the PL and Raman peak positions indicates the presence of compressive stress in the thin GaAs films in both laser-irradiated and nonirradiated areas. This indicates incomplete homogeneous strain relaxation by dislocations at the growth temperature. The residual compressive strain at the growth temperature is large enough such that even with the introduction of tensile strain arising from the difference in thermal expansion coefficients of GaAs and Si, a compressive strain is still present at room temperature for these thin GaAs/Si films.

Lao, Pudong↗