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At least 721 records · Page 40

Moiré-controllable exciton localization and dynamics through spatially-modulated inter- and intralayer excitons in a MoSe 2 /WS 2 heterobilayer

Moiré heterobilayers exhibiting spatially varying exciton localization that can be precisely controlled through the twist angle have emerged as exciting platforms for studying complex quantum phenomena. Here, we study the exciton landscape in MoSe 2 /WS 2 heterobilayers through synergistic first-principles GW plus Bethe Salpeter equation (GW-BSE) calculations and complementary time- and angle-resolved photoemission spectroscopy (tr-ARPES). We find that the MoSe 2 /WS 2 heterobilayer has a type I band alignment at large twist angles. In contrast, at small twist angles, there exist simultaneous spatially modulated regions of local type I band alignment, hosting bright intralayer excitons, and local type II band alignment, hosting long-lived interlayer excitons, due to lattice reconstruction in different high-symmetry regions. In tr-ARPES this manifests in the observation of long-lived excitons with electron population in only MoSe 2 at large twist angles, while in samples with small twist angles, signals from two distinct long-lived exciton states with electron population in both layers are observed. Contrary to earlier studies, we find no excitonic hybridization near the low-energy absorption peaks in MoSe 2 /WS 2 , whose splitting can, instead, be explained by the lattice reconstruction.

Electronic properties and materials↗

Light-field control of real and virtual charge carriers

We report light-driven electronic excitation is a cornerstone for energy and information transfer. In the interaction of intense and ultrafast light fields with solids, electrons may be excited irreversibly, or transiently during illumination only. As the transient electron population cannot be observed after the light pulse is gone, it is referred to as virtual, whereas the population that remains excited is called real. Virtual charge carriers have recently been associated with high-harmonic generation and transient absorption, but photocurrent generation may stem from real as well as virtual charge carriers. However, a link between the generation of the carrier types and their importance for observables of technological relevance is missing. Here we show that real and virtual charge carriers can be excited and disentangled in the optical generation of currents in a gold–graphene–gold heterostructure using few-cycle laser pulses. Depending on the waveform used for photoexcitation, real carriers receive net momentum and propagate to the gold electrodes, whereas virtual carriers generate a polarization response read out at the gold–graphene interfaces. On the basis of these insights, we further demonstrate a proof of concept of a logic gate for future lightwave electronics. Our results offer a direct means to monitor and excite real and virtual charge carriers. Individual control over each type of carrier will markedly increase the integrated-circuit design space and bring petahertz signal processing closer to reality.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Non-uniform longitudinal current density induced power saturation in GaAs-based high power diode lasers

The output power of modern 975 nm GaAs-based broad area diode lasers is limited by increasing carrier and photon losses at high bias. Here, we use experiment and one-dimensional calculations on these devices to reveal that higher current densities (and hence higher local recombination rates and higher losses) arise near the front facet due to spatial hole burning and that the non-uniformity is strongly affected by laser geometry, which is more severe for longer resonators and less severe for higher front facet reflectivity. Specifically, we use devices with a segmented p-contact to directly measure the current distribution along the resonator and compare this with laser simulation. Devices with a 6 mm resonator show 29% more current at the front than back, twice as large as the 15% current non-uniformity in devices with a 3 mm resonator. In contrast, increased front facet reflectivity (20% rather than 0.8%) is shown to almost halve the current non-uniformity from 29% to 18% in devices with a 6 mm resonator and reduces power saturation. Although the magnitude of current non-uniformity in experiment and theory is broadly consistent, in experiment, an additional divergence is seen in current flow (and hence recombination rate) near the facets, and earlier power saturation occurs. Finally, we discuss the possible saturation mechanisms that are not included in the simulation.

47 OTHER INSTRUMENTATION↗

Fast and efficient Sb-based type-II phototransistors integrated on silicon

Increasing the energy efficiency and reducing the footprint of on-chip photodetectors enable dense optical interconnects for emerging computational and sensing applications. While heterojunction phototransistors (HPTs) exhibit high energy efficiency and negligible excess noise factor, their gain-bandwidth product (GBP) has been inferior to that of avalanche photodiodes at low optical powers. Here, we demonstrate that utilizing type-II energy band alignment in an Sb-based HPT results in six times smaller junction capacitance per unit area and a significantly higher GBP at low optical powers. These type-II HPTs were scaled down to 2 μm in diameter and fully integrated with photonic waveguides on silicon. Thanks to their extremely low dark current and high internal gain, these devices exhibit a GBP similar to the best avalanche devices (∼270 GHz) but with one order of magnitude better energy efficiency. Their energy consumption is about 5 fJ/bit at 3.2 Gbps, with an error rate below 10−9 at −25 dBm optical power at 1550 nm. These features suggest new opportunities for creating highly efficient and compact optical receivers based on phototransistors with type-II band alignment.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Angularly resolved spectral reconstruction of x rays via filter pack attenuation

We have designed a new filter pack array to measure angular variations in x-ray spectra during a single shot. The filter pack was composed of repeating identical columns of aluminum and copper filters of varying thicknesses. These columns were located at different positions to measure the spectrum at each corresponding angle. This array was utilized in an experiment to measure the energy evolution of betatron x rays in a laser wakefield accelerator by curving the wakefield with a transverse density gradient, streaking the x rays across the array in front of an x-ray charge-coupled device (CCD) camera. After subtracting the background and “flattening” the image to remove spatial nonuniformities, a critical energy was calculated for each position that produced the best agreement with the measured signal. There was a clear change in critical energy with angle, shedding light on the dynamics of the electrons that traveled through the accelerator. Furthermore, these angles correspond to distinct emission times, covering a timescale of tens of picoseconds. The filter pack was capable of recovering these angular details without the impact of errors introduced by shot-to-shot variability.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

The DAMIC-M Low Background Chamber

The DArk Matter In CCDs at Modane (DAMIC-M) experiment isdesigned to search for light dark matter (m$_{χ}$ < 10 GeV/c$^{2}$)at the Laboratoire Souterrain de Modane (LSM) in France. DAMIC-Mwill use skipper charge-coupled devices (CCDs) as a kg-scale activedetector target. Its single-electron resolution will enable eV-scaleenergy thresholds and thus world-leading sensitivity to a range ofhidden sector dark matter candidates. A DAMIC-M prototype, the LowBackground Chamber (LBC), has been taking data at LSM since2022. The LBC provides a low-background environment, which has beenused to characterize skipper CCDs, study dark current, and measureradiopurity of materials planned for DAMIC-M. It also allows testingof various subsystems like readout electronics, data acquisitionsoftware, and slow control. This paper describes the technicaldesign and performance of the LBC.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Generation of Antibunched Light by Excited Molecules in a Microcavity Trap

The active microcavity is adopted as an efficient source of non-classical light. By this device, excited by a mode-locked laser at a rate of 100 MHz, single-photons are generated over a single field mode with a nonclassical sub-poissonian distribution. The process of adiabatic recycling within a multi-step Franck-Condon molecular optical-pumping mechanism, characterized in our case by a quantum efficiency very close to one, implies a pump self-regularization process leading to a striking n-squeezing effect. By a replication of the basic single-atom excitation process a beam of quantum photon (Fock states) can be created. The new process represents a significant advance in the modern fields of basic quantum-mechanical investigation, quantum communication and quantum cryptography.

DeMartini, F.↗

Photonic Choke-Joints for Dual-Polarization Waveguides

Photonic choke joint (PCJ) structures for dual-polarization waveguides have been investigated for use in device and component packaging. This interface enables the realization of a high performance non-contacting waveguide joint without degrading the in-band signal propagation properties. The choke properties of two tiling approaches, symmetric square Cartesian and octagonal quasi-crystal lattices of metallic posts, are explored and optimal PCJ design parameters are presented. For each of these schemes, the experimental results for structures with finite tilings demonstrate near ideal transmission and reflection performance over a full waveguide band.

Wollack, Edward J.↗

A measurement of absolute efficiency of the ARAPUCA photon detector in liquid argon

In the Fall of 2017, two photon detector designs for the Deep Underground Neutrino Experiment (DUNE) Far Detector were installed and tested in the TallBo liquid argon (LAr) cryostat at the Proton Assembly (PAB) facility, Fermilab. The designs include two light bars developed at Indiana University and a photon detector based on the ARAPUCA light trap engineered by Colorado State University and Fermilab. The performance of these devices is determined by analyzing 8 weeks of cosmic ray data. The current paper focuses solely on the ARAPUCA device as the performance of the light bars will be reported separately. The article briefly describes the ARAPUCA concept, the TallBo setup, and focuses on data analysis and results.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Brightness for Current NSLS-II In-Vacuum Undulator Technology in Different Lattice Scenarios

In this note the peak and effective magnetic field for In-Vacuum Undulators at NSLS-II is characterized by the well-known Halbach formula. This gives a reasonably good approximation of an IVU of any period and any magnetic gap within the range currently used at NSLS-II (≥ 18mm). This parameterization is then used in conjunction with known stay-clear requirements from the ring aperture definition as well as an absolute minimum of 4.5mm to calculate the maximum achievable brightness at any photon energy by scanning the parameters of period, gap, and length. This maximum achievable brightness is calculated for both devices centered at the lattice center as well as in a center-split configuration for the long and short straight sections of NSLS-II. In addition results are shown for a hypothetical single and center-split long straight section where the horizontal and vertical beta functions for a long straight have been modified to match at 2.5m. These are compared to a hypothetical canted double min-β configuration using the long straight section where the vertical beta function minimum is 1.6m and the horizontal as low as 3.2m. The latter case may provide significant benefit for medium and high photon energy beamlines seeking high brightness.

43 PARTICLE ACCELERATORS↗

Prospects and applications of on-chip lasers

Abstract Integrated silicon photonics has sparked a significant ramp-up of investment in both academia and industry as a scalable, power-efficient, and eco-friendly solution. At the heart of this platform is the light source, which in itself, has been the focus of research and development extensively. This paper sheds light and conveys our perspective on the current state-of-the-art in different aspects of application-driven on-chip silicon lasers. We tackle this from two perspectives: device-level and system-wide points of view. In the former, the different routes taken in integrating on-chip lasers are explored from different material systems to the chosen integration methodologies. Then, the discussion focus is shifted towards system-wide applications that show great prospects in incorporating photonic integrated circuits (PIC) with on-chip lasers and active devices, namely, optical communications and interconnects, optical phased array-based LiDAR, sensors for chemical and biological analysis, integrated quantum technologies, and finally, optical computing. By leveraging the myriad inherent attractive features of integrated silicon photonics, this paper aims to inspire further development in incorporating PICs with on-chip lasers in, but not limited to, these applications for substantial performance gains, green solutions, and mass production.

Zhou, Zhican↗

Telescope for x ray and gamma ray studies in astrophysics

Imaging of x-rays has been achieved by various methods in astrophysics, nuclear physics, medicine, and material science. A new method for imaging x-ray and gamma-ray sources avoids the limitations of previously used imaging devices. Images are formed in optical wavelengths by using mirrors or lenses to reflect and refract the incoming photons. High energy x-ray and gamma-ray photons cannot be reflected except at grazing angles and pass through lenses without being refracted. Therefore, different methods must be used to image x-ray and gamma-ray sources. Techniques using total absorption, or shadow casting, can provide images in x-rays and gamma-rays. This new method uses a coder made of a pair of Fresnel zone plates and a detector consisting of a matrix of CsI scintillators and photodiodes. The Fresnel zone plates produce Moire patterns when illuminated by an off-axis source. These Moire patterns are deconvolved using a stepped sine wave fitting or an inverse Fourier transform. This type of coder provides the capability of an instantaneous image with sub-arcminute resolution while using a detector with only a coarse position-sensitivity. A matrix of the CsI/photodiode detector elements provides the necessary coarse position-sensitivity. The CsI/photodiode detector also allows good energy resolution. This imaging system provides advantages over previously used imaging devices in both performance and efficiency.

Weaver, W. D.↗

Superconducting Al-trilayer tunnel junctions for use as X-ray detectors

Photolithographic techniques have been developed to fabricate high-quality Al-Al oxide-Al superconducting tunnel junctions for use in X-ray detectors. These devices are designed to incorporate about 1-micron-thick superconducting X-ray absorbers for the detection of less than 10-keV single photons. In an effort to increase energy resolution, superconductor bandgap engineering with lateral and vertical trapping has been used to shorten quasi-particle tunneling times and diffusion lengths and to prevent quasi-particle diffusion away from the tunnel junction. Methods that have been developed for overcoming materials imcompatibility and device degradation upon thermal cycling are reported. The authors also report on the use of a nonrectangular tunnel junction geometry which reduces the magnetic field needed to suppress the Josephson current for stable biasing. Work in progress to measure the energy resolution of these X-ray detectors at 0.35 K is also discussed.

Gaidis, M. C.↗

High power density soft x-ray GaAs photodiodes with tailored spectral response

GaAs photodiode arrays have been designed for non-destructive monitoring of x-ray beam position in soft coherent beamline front ends in synchrotron light sources. A shallow p-on-n junction was employed to reduce the device photocurrent density to optimize the operation with beam power densities up to 20 W mm -2 , mainly coming from hard x-rays. With this approach, the photocurrent is primarily defined by the excess carriers generated by low-energy x-ray photons absorbed near the detector surface. The p–n junction structures were grown by molecular beam epitaxy and processed into 64-element linear photodiode arrays. The devices were characterized first in the visible range with a high-power Ar-ion laser and then tested in the soft and hard x-ray regions up to 10 keV at two beamlines of the National Synchrotron Light Source II. The responsivity was measured to be 0.16 A W -1 at 0.7 keV and 0.05 A W -1 at 6 keV in agreement with modeling. At higher x-ray energies the measured responsivity was lower than predicted in the framework of the carrier diffusion model; a possible explanation is discussed.

36 MATERIALS SCIENCE↗

Observation of bound states in the continuum embedded in symmetry bandgaps

In the past decade, symmetry-protected bound states in the continuum (BICs) have proven to be an important design principle for creating and enhancing devices reliant upon states with high-quality (Q) factors, such as sensors, lasers, and those for harmonic generation. However, as we show, current implementations of symmetry-protected BICs in photonic crystal slabs can only be found at the center of the Brillouin zone and below the Bragg diffraction limit, which fundamentally restricts their use to single-frequency applications. By microprinting a three-dimensional (3D) photonic crystal structure using two-photon polymerization, we demonstrate that this limitation can be overcome by altering the radiative environment surrounding the slab to be a 3D photonic crystal. This allows for the protection of a line of BICs by embedding it in a symmetry bandgap of the crystal. This concept substantially expands the design freedom available for developing next-generation devices with high-Q states.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Highly efficient visible and near-IR photon pair generation with thin-film lithium niobate

Efficient on-chip entangled photon pair generation at telecom wavelengths is an integral aspect of emerging quantum optical technologies, particularly for quantum communication and computing. However, moving to shorter wavelengths enables the use of more accessible silicon detector technology, and opens up applications in imaging and spectroscopy. Here, we present high brightness ((1.6 ± 0.3) × 10 9 pairs/s/mW/nm) visible–near-IR photon pair generation in a periodically poled lithium niobate nanophotonic waveguide. The degenerate spectrum of the photon pairs is centered at 811 nm with a bandwidth of 117 nm when pumped with a spectrally multimode laser diode. The measured on-chip source efficiency of (2.3 ± 0.5) × 10 11 pairs/s/mW is on par with source efficiencies at telecom wavelengths and is also orders of magnitude higher than the efficiencies of other visible sources implemented in bulk crystal or diffused waveguide-based technologies. Further improvements in the brightness and efficiencies are possible by pumping the device with a single-frequency laser, which would also shrink the pair bandwidth. These results represent the shortest wavelength of photon pairs generated in a nanophotonic waveguide reported to date by nearly an octave.

42 ENGINEERING↗

Erbium quantum memory platform with long optical coherence via back-end-of-line deposition on foundry-fabricated photonics

Realizing scalable quantum interconnects necessitates the integration of solid-state quantum memories with foundry photonics processes. While prior photonic integration efforts have relied upon specialized, laboratory-scale fabrication techniques, this work demonstrates the monolithic integration of a quantum memory platform with low-loss foundry photonic circuits via back-end-of-line deposition. We deposited thin films of titanium dioxide (Ti⁢O 2 ) doped with erbium (Er) onto silicon nitride nanophotonic waveguides and studied Er optical coherence at subkelvin temperatures with photon echo techniques. Furthermore, we suppressed optical dephasing through ex-situ oxygen annealing and optimized measurement conditions, which yielded an optical coherence time of 64 μ⁢s (a 5-kHz homogeneous linewidth) and slow spectral diffusion of 27 kHz over 4 ms, results that are comparable to state-of-the-art Er nanophotonic devices. Combined with second-long electron spin lifetimes and demonstrated electrical control of Er emission, our findings establish Er:Ti⁢O 2 on foundry photonics as a manufacturable platform for ensemble and single-ion quantum memories.

Electro-optic effects↗

Spectroscopic performance of Low-Gain Avalanche Diodes for different types of radiation

LGADs (Low-Gain Avalanche Diodes or Detectors) are a type of silicon Avalanche Photo-Diodes originally developed for the fast detection of minimum ionizing particles in high-energy physics experiments. Thanks to their fast timing performance, the LGAD paradigm enables detectors to accurately measure minimum ionizing particles with a timing resolution of a few tens of picoseconds. Such a performance is due to a thin substrate and the presence of a moderate signal gain. This internal gain of a few tens is enough to compensate for the reduced charge deposition in the thinner substrate and the noise of fast read-out systems. While LGADs are optimized for the detection of minimum ionizing particles for high-energy particle detectors, it is critical to study their performance for the detection of different types of particle, such as X-rays, gamma-rays, or alphas. In this paper, we evaluate the gain of three types of LGADs: two devices with different geometries and doping profiles fabricated by Brookhaven National Laboratory, and one fabricated by Hamamatsu Photonics with a different process. Since the gain in LGADs depends on the bias voltage applied to the sensor, pulse-height spectra have been acquired for bias voltages spanning from the depletion voltage up to the breakdown voltage. Finally, the signal-to-noise ratio of the generated signals and the shape of their spectra allow us to probe the underlying physics of the multiplication process.

47 OTHER INSTRUMENTATION↗