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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 721 records · Page 40
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Evaluation of Thermal & Mechanical Properties of Additively Manufactured Monolithic SiC for Solar Receiver Applications

Increasing the operating temperatures of solar receivers is paramount to the efficiency of concentrated solar thermal (CST) and solar power (CSP) systems. Owing to its high temperature stability combined with excellent thermal and optical properties, SiC has been the material of choice for application in high-temperature solar receivers. State-of-the-art SiC volumetric concentrating solar air receivers such as the honeycomb design have successfully demonstrated in field exit air temperatures approaching 800oC. However, a successful application of CST systems for the decarbonization of heat reliant industrial sectors requires significant increases in the temperature capability of SiC receiver technology. Supported by an award from the Solar Technology Office (SETO), US Department of Energy (DOE), GE Research in collaboration with Heliogen Holdings Inc, is engaged in the development of an ultra-High Operating Temperature SiC-matrix Solar Thermal Air Receiver (HOTSSTAR) enabled by additive manufacturing. The program objective is to design and demonstrate a techno-economically viable SiC air receiver technology that can achieve exit air temperatures up to 1100oC for CST applications. We report and discuss the results of our testing and evaluation of thermal and mechanical properties of reaction-bonded SiC fabricated via binder jet printing to support the receiver component design, development, and analyses.

14 SOLAR ENERGY↗
DOE OSTI2024

Evaluation of Additively Manufactured Monolithic SiC and SiC-Matrix Ceramic Matrix Composites for Concentrating Solar Receiver Applications - Fabrication and Testing of Receiver Design Feature Specimens in a Simulating Lab Test via Laser Heating

Increasing operating temperatures of solar receivers is paramount to the efficiency of concentrated solar thermal (CST) and solar power (CSP) systems. Owing to its high temperature stability combined with excellent thermal and optical properties, SiC has been the material of choice for application in high-temperature solar receivers. We report the results of our study of the effective heat transfer characteristics of several candidate SiC structure motifs, or feature geometries, which are fabricated via additive manufacturing. The SiC structure motifs studied include different permutations of three-dimensional periodic lattices and defined shapes. A solar-thermal simulating laboratory test setup is constructed using a 4kW CO2 laser system with beam shaping optics to apply concurrent radiative heating power on one face of 2”-diameter cylindrical feature specimens, representing the structure motifs of interest for receiver element design, while flowing through the sample as heat transfer fluid. Using the test setup, simulative test conditions representative of a concentrated solar flux of up to ~2000 suns could be achieved in the lab tests under varying air flow through the test structure. A simple 1D numerical analysis scheme is developed to extract an effective or compound heat transfer coefficient representative of the test structure under steady-state heat flow conditions. The test results and their use to guide the selection and optimization of SiC material and structure motifs for the receiver element design fabrication are discussed.

14 SOLAR ENERGY↗
NASA NTRS1967

Test and inspection for process control of monolithic circuits

Report details the test and inspection procedures for the mass production of high reliability integrated circuits. It covers configuration control, basic fundamentals of quality control, control charts, wafer process evaluation, general process evaluation, evaluation score system, and diffusion evaluation.

Spangenberg, E.↗
NASA NTRS1972

Development of chip passivated monolithic complementary MISFET circuits with beam leads

Fabrication method is described for alumina passivated silicon MISFET arrays. Technique involves total passivation beam-lead approach and provides completely sealed chip with double level interconnect capability. Refractory metal alloy is used to form interconnect system and obtain metal contacts that withstand temperatures of 873 K for short periods of time.

Ragonese, L. J.↗
NASA NTRS1971

Monolithic parallel processor, phase 1A

A four-bit parallel processor LSI array was designed and fabricated using COS/MOS integrated-circuit technology. The design features include the provision for interconnecting groups of parallel-processor chips to form an expanded processor of any desired word length. This 800-transistor "computer on a chip' circuit has the logic capability of a medium-size, medium-speed, general-purpose computer suitable for sophisticated scientific data processing. The ability to fabricate this device repetitively was demonstrated.

Source record↗