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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 721 records · Page 40
All sourcesNASA NTRSDOE OSTI
DOE OSTI2010

Efficient multimode quantum memory based on photon echo in an optimal QED cavity

Effective multimode photon echo quantum memory on multiatomic ensemble in the QED cavity is proposed. We obtain the analytical solution for the quantum memory efficiency that can be equal to unity when optimal conditions for the cavity and atomic parameters are held. Detailed analysis of the optimal conditions is performed. Numerical estimation for realistic atomic and cavity parameters demonstrates the high efficiency of the quantum memory for an optically thin resonant atomic system that opens a door for real applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Coupling Rydberg atoms to superconducting qubits via nanomechanical resonator

We propose a hybrid system to realize long information storage and fast quantum operation via Rydberg atoms and superconducting qubits (SCQs). The internal states of a Rydberg atom are coupled to a nanomechanical resonator. The atom-resonator coupling is achieved via an electric field generated by the quantized motions of the resonator and temporarily exciting the atom to Rydberg states. The coupling can be made large enough to allow quantum manipulation and measurement of the resonator via the atom. The resonator can also be coupled to a SCQ, and therefore the tripartite system can provide a quantum interface between the SCQ and the atom via the nanomechanical resonator.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Quantum Kolmogorov complexity and bounded quantum memory

The effect of bounded quantum memory in a primitive information protocol has been examined using the quantum Kolmogorov complexity as a measure of information. We employed a toy two-party protocol in which Bob, by using a bounded quantum memory and an unbounded classical memory, estimates a message that was encoded in qubits by Alice in one of the bases X or Z. Our theorem gave a nontrivial effect of the memory boundedness. In addition, a generalization of the uncertainty principle in the presence of quantum memory has been obtained.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Three-dimensional theory of quantum memories based on {Lambda}-type atomic ensembles

We develop a three-dimensional theory for quantum memories based on light storage in ensembles of {Lambda}-type atoms, where two long-lived atomic ground states are employed. We consider light storage in an ensemble of finite spatial extent and we show that within the paraxial approximation the Fresnel number of the atomic ensemble and the optical depth are the only important physical parameters determining the quality of the quantum memory. We analyze the influence of these parameters on the storage of light followed by either forward or backward read-out from the quantum memory. We show that for small Fresnel numbers the forward memory provides higher efficiencies, whereas for large Fresnel numbers the backward memory is advantageous. The optimal light modes to store in the memory are presented together with the corresponding spin waves and outcoming light modes. We show that for high optical depths such {Lambda}-type atomic ensembles allow for highly efficient backward and forward memories even for small Fresnel numbers F(greater-or-similar sign)0.1.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Strongly coupling a cavity to inhomogeneous ensembles of emitters: Potential for long-lived solid-state quantum memories

We investigate theoretically the coupling of a cavity mode to a continuous distribution of emitters. We discuss the influence of the emitters' inhomogeneous broadening on the existence and on the coherence properties of the polaritonic peaks. We find that their coherence depends crucially on the shape of the distribution and not only on its width. Under certain conditions the coupling to the cavity protects the polaritonic states from inhomogeneous broadening, resulting in a longer storage time for a quantum memory based on emitter ensembles. When two different ensembles of emitters are coupled to the resonator, they support a peculiar collective dark state, which is also very attractive for the storage of quantum information.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Second-Order Josephson Effect in Excitonic Insulators

We show that in electron-hole bilayers with excitonic orders arising from conduction and valence bands formed by atomic orbitals that have different parities, nonzero interlayer tunneling leads to a second-order Josephson effect. This means the interlayer electrical current is related to the phase of the excitonic order parameter as J = J c sin 2θ instead of J = J c sin θ and that the system has two degenerate ground states at θ = 0, π that can be switched by an interlayer voltage pulse. When generalized to a three dimensional stack of alternating electron-hole planes or a two dimensional stack of chains, the ac Josephson effect implies that electric field pulses perpendicular to the layers and chains can steer the order parameter phase between the two degenerate ground states, making these devices ultrafast memories. Here, the order parameter steering also applies to the excitonic insulator candidate Ta 2 NiSe 5 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Stability Diagrams of a Tunnel Nanoheterostructure in the Free-Electron Approximation

One of important characteristics of a magnetic tunneling junction (MTJ) nanoheterostructure that is used as magnetic random access memory (MRAM) cell and is switched by the spin transfer torque (STT) effect is its stability diagram, which determines the range of values of the external magnetic field and applied voltage under which a cell is in one of two stable states. To numerically construct such diagrams, one usually uses the solution of the Landau–Lifshitz dynamic equation in the single-domain approximation along with phenomenological constants that determine the values of spin torque in the material. In the present paper, the problem of spin-dependent electron transfer in an MTJ structure is considered, whose solution in the free-electron approximation allows one to calculate the values of spin torque for a given material in any magnetic configuration of the system and apply them to the integration of the Landau–Lifshitz equation. The method used allows one to more precisely reproduce the shape of the stability diagram and predict the critical values of the magnetic field and voltage necessary to switch an MTJ-based MRAM cell.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2015

Conditions of steady switching in phase-transition memory cells

Three types of non-volatile memory cells of different designs based on phase transitions are developed and implemented. The effect of the design features of the cells and their active-region sizes on the switching characteristics and normal operation of the cells is considered as a whole. The causes of failure of the cells are analyzed from the obtained series of scanning electron images upon level-by-level etching of the samples. It is shown that the cell design is the most critical factor from the viewpoint of switching to the high-resistance state. The causes of this fact are analyzed and the criterion for providing the steady operation of cells of non-volatile memory based on phase transitions is formulated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Analysis of the Switching Characteristics of MRAM Cells Based on Materials with Uniaxial Anisotropy

Magnetoresistive random access memory (MRAM) has some advantages over other types of memory. However, MRAM has one substantial drawback: the current density and magnetic field that must be applied to switch the spin-valve free layer inside an MRAM cell are too high. The dependence of the current density and switching magnetic field on the magnetic parameters of the material from which the ferromagnetic layers of a spin valve are fabricated is therefore analyzed. A comparison of the critical characteristics of a spin valve with longitudinal anisotropy shows that cobalt, iron, and alloys of them; cobalt ferroborates; and alloys of cobalt with gadolinium, are promising materials for fabricating spin valves. Bifurcation diagrams of equations that describe the valve switching process are presented and analyzed. The four optimum switching modes of a valve are selected, based on an investigation of the dynamics of the magnetization vector. The magnitudes of the external magnetic field and controlling injection current that correspond to stable MRAM cell switching are compared for a variety of materials. The switching time of an MRAM cell is estimated numerically, and the conditions for its optimum speed are determined. It is established that the most promising materials for spin-valve fabrication are Fe{sub 40}Co{sub 40}B{sub 20} and Co{sub 80}Gd{sub 20}, annealed at 300 and 200°C, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Computational and Experimental Simulation of Static Memory Cells of Submicron Microcircuits under the Effect of Neutron Fluxes

The simulation of reversible single events in test samples of static memory microcircuits with design norms of 0.5, 0.35, 0.25, and 0.1 μm under the effect of neutron fluxes with various energies is performed. It is shown theoretically and experimentally that reversible single events can occur in modern microelectronics and nanoelectronics products under the effect of a fission-spectrum neutron flux caused by the passage of primary recoil atoms and nuclear reaction products along the microcircuit surface perpendicularly to the electric current lines in the near-drain transistor area. A series of irradiation experiments of static memory circuits with design norms of 0.35 μm is interpreted based on the proposed model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Numerical Simulation of the Current–Voltage Characteristics of Bilayer Resistive Memory Based on Non-Stoichiometric Metal Oxides

The current–voltage characteristics of a resistive-memory structure based on non-stoichiometric tantalum oxides is numerically simulated. The results of pulsed studies of structures with different shapes of the conductive filament, such as a truncated cone with different generatrix inclination angles, are presented. It is shown how the shape and total volume of the conductive filament affects the current amplitude and the number of pulses necessary for complete filament breaking and restoration.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Superconducting Spin Valves Based on Spiral Magnets

Abstract—Structures with spiral antiferromagnets are proposed as superconducting memory elements. The first structure consists of one superconducting layer and one magnetic layer with a spiral magnetization. The latter is a Josephson junction with spiral magnet as a weak link. The schematic diagram of switching between logic states in proposed structures is described.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Comparison of flash-memory elements using materials based on graphene

Charge capture on flash-memory test structures with floating gates made of graphene (few-layer graphene) and its compounds (graphene oxide and partially fluorinated graphene) is investigated. A comparison of the memory window for different structures has shown the potential of using reduced graphene oxide, graphene with only a few layers, and fluorographene. For the first time, partially fluorinated graphene has been employed as a floating gate in flash-memory structures. Graphene-based materials are promising for 2D printing technologies and flexible electronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2010

Proposal for the development of 3D Vertically Integrated Pattern Recognition Associative Memory (VIPRAM)

Future particle physics experiments looking for rare processes will have no choice but to address the demanding challenges of fast pattern recognition in triggering as detector hit density becomes significantly higher due to the high luminosity required to produce the rare process. The authors propose to develop a 3D Vertically Integrated Pattern Recognition Associative Memory (VIPRAM) chip for HEP applications, to advance the state-of-the-art for pattern recognition and track reconstruction for fast triggering.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2012

Evaluation of the Leon3 Soft-Core Processor Within a Xilinx Radiation-Hardened Field-Programmable Gate Array

The purpose of this document is to summarize the work done to evaluate the performance of the Leon3 soft-core processor in a radiation environment while instantiated in a radiation-hardened static random-access memory based field-programmable gate array. This evaluation will look at the differences between two soft-core processors: the open-source Leon3 core and the fault-tolerant Leon3 core. Radiation testing of these two cores was conducted at the Texas A&M University Cyclotron facility and Lawrence Berkeley National Laboratory. The results of these tests are included within the report along with designs intended to improve the mitigation of the open-source Leon3. The test setup used for evaluating both versions of the Leon3 is also included within this document.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2018

An FPGA-based Pattern Recognition Associative Memory

Pattern recognition associative memory (PRAM) devices are parallel processing engines which are used to tackle the complex combinatorics of track nding algorithms, particularly for silicon based tracking triggers. PRAM development has been mostly limited to the realm of ASICs, which often leads to lengthy and expensive design cycles. FPGAs allow for quick iterations, making them an ideal hardware platform for designing and evaluating new PRAM features before committing to silicon. In this paper we present our FPGA-based PRAM designs and discuss how logic blocks which were originally developed for ASICs have been redesigned to take advantage of modern FPGA architectures.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

Impacts of Substrate Thinning on FPGA Performance and Reliability [Slides]

Substrate thinning is necessary in devices with flip-chip BGA packages to enable both radiation testing and component qualification and high-spatial resolution beam-based failure analysis methods. We investigated three factors affecting device performance: subsurface damage from the thinning process, reduced heat spreading in thin substrates, and changes in device switching speed. We conclude subsurface damage to crystalline Si caused by the thinning process is removable with sufficient SiO 2 slurry polishing. Local temperature differences increase minimally in devices thinned to 3 μm. Compressive stress in the Si increases globally after device thinning and leads to slowing of ring oscillator frequency by about 0.5% compared to full-thickness devices. Future work will include extending the results to submicron Si thickness values, which also has important benefits for failure analysis, debug, and security assessments. We also plan to extend this type of work to other FPGAs and other devices like memory and processors.

36 MATERIALS SCIENCE↗