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At least 721 records · Page 40

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NASA NTRS1983

Convection effects at solid-liquid interfaces: Influence of gravity

The stability of the flow between two vertical, infinite, rigid, coaxial cylinders held at different temperatures is analyzed by linear stability theory. For a Prandtl number of 22.8 and a radius ratio of 0.02, the flow is unstable to an axisymmetric perturbation at a critical Grashof number of 2150; the wave speed of the instability is comparable to the maximum velocity of the unperturbed flow. When the rigid outer cylinder-fluid interface is replaced by a crystal-melt interface which can change shape, two new modes of instability occur at lower Grashof numbers.

Glicksman, M. E.↗

NASA NTRS1983

Design of a microprocessor-based Control, Interface and Monitoring (CIM unit for turbine engine controls research

High speed minicomputers were used in the past to implement advanced digital control algorithms for turbine engines. These minicomputers are typically large and expensive. It is desirable for a number of reasons to use microprocessor-based systems for future controls research. They are relatively compact, inexpensive, and are representative of the hardware that would be used for actual engine-mounted controls. The Control, Interface, and Monitoring Unit (CIM) contains a microprocessor-based controls computer, necessary interface hardware and a system to monitor while it is running an engine. It is presently being used to evaluate an advanced turbofan engine control algorithm.

Delaat, J. C.↗

NASA NTRS1983

Interface states and internal photoemission in p-type GaAs metal-oxide-semiconductor surfaces

An interface photodischarge study of p-type GaAs metal-oxide-semiconductor (MOS) structures revealed the presence of deep interface states and shallow donors and acceptors which were previously observed in n-type GaAs MOS through sub-band-gap photoionization transitions. For higher photon energies, internal photoemission was observed, i.e., injection of electrons to the conduction band of the oxide from either the metal (Au) or from the GaAs valence band; the threshold energies were found to be 3.25 and 3.7 + or - 0.1 eV, respectively. The measured photoemission current exhibited a thermal activation energy of about 0.06 eV, which is consistent with a hopping mechanism of electron transport in the oxide.

Kashkarov, P. K.↗

NASA NTRS1983

Generalized modal shock spectra within indeterminate interface

It is noted that the generalized modal shock spectra method had limitations on the degree of structural static determinacy of the spacecraft-to-launch-vehicle interface. The 'interface modes' is used here to remove these practical limitations. The governing differential equations are derived and then shown to be valid either for integrating the modal models of two or more substructures that have been previously obtained separately or for removing a substructure from a previously available system modal model. Emphasis is placed on the integration problems in the context of the generalized modal shock spectra approach. A minimum of information the modal response of a previously obtained transient analysis of the unloaded launch vehicle is exploited in order to define an idealized modal impulse function and derive approximate explicit expressions for an estimate of the bounds of the spacecraft response. In addition, a numerical model is solved in order to compare the present results with the transient solution.

Salama, M.↗

NASA NTRS1982

Effect of heat transfer of melt/solid interface shape and solute segregation in Edge-Defined Film-Fed growth - Finite element analysis

The effects of the heat transfer environment in Edge-Defined Film-Fed Growth on melt-solid interface shape and lateral dopant segregation are studied by finite-element analysis of two-dimensional models for heat and mass transfer. Heat transfer configurations are studied that correspond to the uniform surroundings assumed in previous models and to lowand high-speed growth systems. The maximum growth rate for a silicon sheet is calculated and the range of validity of one-dimensional heat transfer models is established. The lateral segregation that results from curvature of the solidification interface is calculated for two solutes, boron and aluminum. In this way, heat transfer is linked directly to the uniformity of the product crystal.

Ettouney, H. M.↗

NASA NTRS1983

Techniques for improving the Si-SiO2 interface characterization

The two techniques which have provided most of the information on interface states in MIS-C (metal-insulator-semiconductor-capacitor) structures are the 'quasi-static method' and the 'conductance method'. Sher et al. (1979) and Su et al. (1980) have suggested a number of improvements concerning these methods. The present investigation has the objective to extend the earlier results and to offer a new tentative interpretation of the data. A critical review is conducted of the data collection and reduction techniques for the quasi-static method, taking into account the sample, the quasi-static capacitance, and the surface potential. In connection with a discussion of the conductance method, attention is given to parallel conductance and capacitance measurements, interface-state densities, time constants, and measurements on a (110) surface orientation.

Sher, A.↗

NASA NTRS1983

The control of float zone interfaces by the use of selected boundary conditions

The main goal of the float zone crystal growth project of NASA's Materials Processing in Space Program is to thoroughly understand the molten zone/freezing crystal system and all the mechanisms that govern this system. The surface boundary conditions required to give flat float zone solid melt interfaces were studied and computed. The results provide float zone furnace designers with better methods for controlling solid melt interface shapes and for computing thermal profiles and gradients. Documentation and a user's guide were provided for the computer software.

Foster, L. M.↗

NASA NTRS1984

Stability of finite difference models containing two boundaries or interfaces

The stability of finite difference models of hyperbolic initial boundary value problems is connected with the propagation and reflection of parasitic waves. Wave propagation ideas are applied to models containing two boundaires or interfaces, where repeated reflection of trapped wave packets is a potential new source of instability. Various known instability phenomena are accounted for in a unified way. Results show: (1) dissipativity does not ensure stability when three or more formulas are concatenated at a boundary or internal interface; (2) algebraic GKS instabilities can be converted by a second boundary to exponential instabilities only when an infinite numerical reflection coefficient is present; and (3) GKS-stability and P-stability can be established in certain problems by showing that all numerical reflection coefficients have modulus less than 1.

Trefethen, L. N.↗

NASA NTRS1983

Satellite services handbook. Interface guidelines

Satellite interfaces for on orbit servicing, both manned and unmanned are identified, and is intended to be used by designers of space vehicles, both foreign and domestic. A primary concern is for design of interfaces with the astronaut in the loop, especially extravehicular activity, but also intravehicular activity and operations that are remote but have man-in-the-loop. The main emphasis is on servicing in low earth orbits from the Space Shuttle and also from the Space Station or other platforms.

Source record↗

NASA NTRS1983

Radial segregation induced by natural convection and melt/solid interface shape in vertical Bridgman growth

The roles of natural convection in the melt and the shape of the melt/solid interface on radial dopant segregation are analyzed for a prototype of vertical Bridgman crystal growth system by finite element methods that solve simultaneously for the velocity field in the melt, the shape of the solidification isotherm, and the temperature distribution in both phases. Results are presented for crystal and melt with thermophysical properties similar to those of gallium-doped germanium in Bridgman configurations with melt below (thermally destabilizing) and above (stabilizing) the crystal. Steady axisymmetric flow are classified according to Rayleigh number as either being nearly the growth velocity, having a weak cellular structure or having large amplitude cellular convention. The flows in the two Bridgman configurations are driven by different temperature gradients and are in opposite directions. Finite element calculations for the transport of a dilute dopant by these flow fields reveal radial segregation levels as large as sixty percent of the mean concentration. Segregation is found most severe at an intermediate value of Rayleigh number above which the dopant distribution along the interface levels as the intensity of the flow increases.

Chang, C. J.↗

NASA NTRS1983

Is structural interface standardization beneficial?

Factors applicable to fixed angle, large field and fixed angle, large building flat plate photovoltaic (PV) generator arrays are discussed in the context of standardization. It is concluded that structural interface standardization may be highly desirable in any one major project, but not at this time in the overall PV industry. Attempts to mandate such standardization will act as a deterrent to long-range improvements. In specific projects, structural standardization should be defined at the largest practical interface, leaving the maximum possible freedom to the module and array manufacturer. There is a corollary area, however, where detailed standards would benefit the industry; the matter of Standard Practices. Work being done towards definition of acceptable/desirable practices in materials, finishes, fastening and locking methods, grounding techniques, lightning protection, etc., and in handling the environmental ranges, should be continued.

Dombert, W. E.↗

NASA NTRS1984

LEED and AES characterization of the GaAs(110)-ZnSe interface

In this paper, a study is conducted of the composition and structure of epitaxial ZnSe films grown by congruent evaporation on GaAs(110) at a rate of 2 A/min. It is found that the films grown on 300 C GaAs are nearly stoichiometric and form an abrupt interface with the substrate. Films grown at higher temperature (T greater than 350-400 C) are Se rich. The crystallinity of films grown at 300 C is good and their surface atomic geometry is identical to that of a ZnSe crystal. The GaAs-ZnSe interface geometry seems to be dominated by the Se-substrate bonds. The adsorption of Se, during the formation of very thin ZnSe films (2-3 A), produces a (1 x 2) LEED pattern and modifications of the LEED I-V profiles, which probably indicate a change in the substrate atomic relaxation.

Tu, D.-W.↗

NASA NTRS1984

Intelligent interfaces for tactical airborne platforms

Enhanced capabilities of tactical airborne platforms have resulted in increased number of aircrew tasks, greater task complexity, and increased time-stress in task performance. Embedded intelligence in the aircrew-vehicle interface (AVI) can help alleviate aircrew workload and enhance aircrew performance by: (1) optimizing the exchange of information between the aircrew and the onboard automation; and (2) adaptively allocating functions between aircrew and automation in response to situational demands. Intelligent interface issues are addressed in this report such as: (1) how to ensure that the aircrew can cope with the information influx; (2) how to present/portray both situational and internal status information; (3) how to allocate functions between the aircrew and the onboard automation; and (4) how to explain reasoning processes employed by onboard intelligence to the aircrew.

Madni, A.↗

NASA NTRS1984

Space Shuttle program communication and tracking systems interface analysis

The Space Shuttle Program Communications and Tracking Systems Interface Analysis began April 18, 1983. During this time, the shuttle communication and tracking systems began flight testing. Two areas of analysis documented were a result of observations made during flight tests. These analyses involved the Ku-band communication system. First, there was a detailed analysis of the interface between the solar max data format and the Ku-band communication system including the TDRSS ground station. The second analysis involving the Ku-band communication system was an analysis of the frequency lock loop of the Gunn oscillator used to generate the transmit frequency. The stability of the frequency lock loop was investigated and changes to the design were reviewed to alleviate the potential loss of data due the loop losing lock and entering the reacquisition mode. Other areas of investigation were the S-band antenna analysis and RF coverage analysis.

Dodds, J. G.↗

NASA NTRS1985

A computer analysis program for interfacing thermal and structural codes

A software package has been developed to transfer three-dimensional transient thermal information accurately, efficiently, and automatically from a heat transfer analysis code to a structural analysis code. The code is called three-dimensional TRansfer ANalysis Code to Interface Thermal and Structural codes, or 3D TRANCITS. TRANCITS has the capability to couple finite difference and finite element heat transfer analysis codes to linear and nonlinear finite element structural analysis codes. TRANCITS currently supports the output of SINDA and MARC heat transfer codes directly. It will also format the thermal data output directly so that it is compatible with the input requirements of the NASTRAN and MARC structural analysis codes. Other thermal and structural codes can be interfaced using the transfer module with the neutral heat transfer input file and the neutral temperature output file. The transfer module can handle different elemental mesh densities for the heat transfer analysis and the structural analysis.

Thompson, R. L.↗

NASA NTRS1985

Chemical structure of interfaces

The interfacial structure of silicon/dielectric and silicon/metal systems is particularly amenable to analysis using a combination of surface spectroscopies together with a variety of chemical structures of Si/SiO2, Si/SiO2Si3N4, Si/Si2N2O, Si/SiO2/Al, and Si/Native Oxide interfaces using high resolution (0.350 eV FWHM) X ray photoelectron spectroscopy. The general structure of these dielectric interfaces entails a monolayer chemical transition layer at the Si/dielectric boundary. Amorphous Si substrates show a wide variety of hydrogenated Si and Si(OH) sub x states that are not observed in thermal oxidation of single crystal material. Extended SiO2 layers greater than 8 A in thickness are shown to be stoichiometric SiO2, but to exhibit a wide variety of local network structures. In the nitrogen containing systems, an approach to stoichiometric oxynitride compounds with interesting impurity and electron trapping properties are seen. In native oxides, substantial topographical nonuniformity in oxide thickness and composition are found. Analysis of metal/oxide interfacial layers is accomplished by analytical removal of the Si substrate by UHV XeF2 dry etching methods.

Grunthaner, F. J.↗

NASA NTRS1985

Sulfur transformations at the hydrogen sulfide/oxygen interface in stratified waters and in cyanobacterial mats

Stratified water bodies allow the development of several microbial plates along the water column. The microbial plates develop in relation to nutrient availability, light penetration, and the distribution of oxygen and sulfide. Sulfide is initially produced in the sediment by sulfate-reducing bacteria. It diffuses along the water column creating a zone of hydrogen sulfide/oxygen interface. In the chemocline of Solar Lake oxygen and sulfide coexist in a 0 to 10 cm layer that moves up and down during a diurnal cycle. The microbial plate at the chemocline is exposed to oxygen and hydrogen sulfide, alternating on a diurnal basis. The cyanobacteria occupying the interface switch from anoxygenic photosynthesis in the morning to oxygenic photosynthesis during the rest of the day which results in a temporal build up of elemental sulfur during the day and disappears at night due to both oxidation to thiosulfate and sulfate by thiobacilli, and reduction to hydrogen sulfide by Desulfuromonas sp. and anaerobically respiring cyanobacteria. Sulfate reduction was enhanced in the light at the surface of the cyanobacterial mats. Microsulfate reduction measurements showed enhanced activity of sulfate reduction even under high oxygen concentrations of 300 to 800 micrometer. Apparent aerobic SO sub 4 reduction activity is explained by the co-occurrence of H sub 2. The physiology of this apparent sulfate reduction activity is studied.

Cohen, Y.↗

NASA NTRS1984

Electronic and chemical structure of metal-silicon interfaces

This paper reviews our current understanding of the near-noble metal silicides and the interfaces formed with Si(100). Using X-ray photoemission spectroscopy, we compare the chemical composition and electronic structure of the room temperature metal-silicon and reacted silicide-silicon interfaces. The relationship between the interfacial chemistry and the Schottky barrier heights for this class of metals on silicon is explored.

Grunthaner, P. J.↗