Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “INSULATION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 721 records · Page 40

Observation of the topological surface state in the nonsymmorphic topological insulator KHgSb

Topological insulators represent unusual topological quantum states, typically with gapped bulk band structure but gapless surface Dirac fermions protected by time-reversal symmetry. Recently, a distinct kind of topological insulator resulting from nonsymmorphic crystalline symmetry was proposed in the KHg X ($X$ = $\mathrm{As}$, Sb, Bi) compounds. Unlike regular topological crystalline insulators, the nonsymmorphic glide-reflection symmetry in KHg X guarantees the appearance of an exotic surface fermion with hourglass shape dispersion (where two pairs of branches switch their partners) residing on its (010) side surface, contrasting to the usual two-dimensional Dirac fermion form. Here, by using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the electronic structures of KHgSb on both (001) and (010) surfaces and reveal the unique in-gap surface states on the (010) surface with delicate dispersion consistent with the "hourglass Fermion" recently proposed. Finally, our experiment strongly supports that KHgSb is a nonsymmorphic topological crystalline insulator with hourglass fermions, which serves as an important step to the discovery of unique topological quantum materials and exotic fermions protected by nonsymmorphic crystalline symmetry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Exploring interfacial exchange coupling and sublattice effect in heavy metal/ferrimagnetic insulator heterostructures using Hall measurements, x-ray magnetic circular dichroism, and neutron reflectometry

In this article, we use temperature-dependent Hall measurements to identify contributions of spin Hall, magnetic proximity, and sublattice effects to the anomalous Hall signal in heavy metal/ferrimagnetic insulator heterostructures with perpendicular magnetic anisotropy. This approach enables detection of both the magnetic proximity effect onset temperature and the magnetization compensation temperature and provides essential information regarding the interfacial exchange coupling. Onset of a magnetic proximity effect yields a local extremum in the temperature-dependent anomalous Hall signal, which occurs at higher temperature as magnetic insulator thickness increases. This magnetic proximity effect onset occurs at much higher temperature in Pt than W. The magnetization compensation point is identified by a sharp anomalous Hall sign change and divergent coercive field. We directly probe the magnetic proximity effect using x-ray magnetic circular dichroism and polarized neutron reflectometry, which reveal an antiferromagnetic coupling between W and the magnetic insulator. Finally, we summarize the exchange-coupling configurations and the anomalous Hall-effect sign of the magnetized heavy metal in various heavy metal/magnetic insulator heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Lifshitz-Transition-Driven Metal-Insulator Transition in Moderately Spin-Orbit-Coupled Sr 2-x La x RhO 4

Motivated by the novel insulating state of Sr 2 IrO 4 from strong spin-orbit coupling (SOC), we investigate, by means of angle resolved photoemission, the metal-insulator transition (MIT) mechanism in Sr 2-x La x RhO 4 whose mother compound is isovalent and isostructural but has smaller SOC strength compared to Sr 2 IrO 4 . Transport and angle resolved photoemission results from single crystalline Sr 2-x La x RhO 4 revealed that the MIT occurs coincidentally with a multi- to single-band transition (Lifshitz transition) at x=0.4. Starting from x=0.4, there is a gradual but anomalous enhancement in the band gap size with additional electron doping, suggesting that the insulating phase in Sr 2-x La x RhO 4 is a new type which has been rarely investigated. These results suggest that the insulating phase in Sr 2-x La x RhO 4 is likely induced by the moderate SOC strength and electron doping effect from the La. Our findings in this study not only elucidate the MIT mechanism in Sr 2-x La x RhO 4 , but may also open new avenues for novel MIT research in moderate SOC regimes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Orbital Chern Insulator and Quantum Phase Diagram of a Kagome Electron System with Half-Filled Flat Bands

In this work, we study the quantum phase diagram of electrons on kagome lattice with half-filled lowest flat bands by considering the antiferromagnetic Heisenberg interaction J, and short-range Coulomb interaction V. In the weak J regime, we identify a fully spin-polarized phase. The presence of finite V drives a spontaneous chiral current, which makes the system an orbital Chern insulator by contributing an orbital magnetization. Such an out-of-plane orbital magnetization allows the presence of a Chern insulating phase independent of the spin orientation in contrast to the spin-orbit coupling induced Chern insulator that disappears with inplane ferromagnetism constrained by symmetry. Such a symmetry difference provides a criterion to distinguish the physical origin of topological responses in kagome systems. The orbital Chern insulator is robust against small coupling J. By further increasing J, we find that the ferromagnetic topological phase is suppressed, which first becomes partially polarized and then enters a nonmagnetic phase with spin and charge nematicity. The frustrated flat band allows the spin and Coulomb interaction to play an essential role in determining the quantum phases.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Competing Zero-Field Chern Insulators in Superconducting Twisted Bilayer Graphene

The discovery of magic angle twisted bilayer graphene has unveiled a rich variety of superconducting, magnetic, and topologically nontrivial phases. Here, we show that the zero-field states at odd integer filling factors in h-BN nonaligned devices are consistent with symmetry broken Chern insulators, as is evidenced by the observation of the anomalous Hall effect near moiré cell filling factor ν = +1. The corresponding Chern insulator has a Chern number C = ±1 and a relatively high Curie temperature of T c ≈ 4.5 K. In a perpendicular magnetic field above B > 0.5 T we observe a transition of the ν = +1 Chern insulator from Chern number C = ±1 to C = 3, characterized by a quantized Hall plateau with R yx = h/3e 2 . These observations demonstrate that interaction-induced symmetry breaking leads to zero-field ground states that include almost degenerate and closely competing Chern insulators, and that states with larger Chern numbers couple most strongly to the B field. In addition, the device reveals strong superconducting phases with critical temperatures of up to T c ≈ 3.5 K. By providing the first demonstration of a system that allows gate-induced transitions between magnetic and superconducting phases, our observations mark a major milestone in the creation of a new generation of quantum electronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Fermiology and transport properties of the candidate topological crystalline insulator SrAg 4 ⁢Sb 2

Compared to time-reversal symmetry-protected ℤ 2 topological insulators and Dirac/Weyl semimetals, there are significantly fewer candidates for topological crystalline insulators. SrAg 4 ⁢Sb 2 is predicted to exhibit topological crystalline insulator behavior when considering spin-orbit coupling. In this study, we systematically investigate single crystals of SrAg 4 ⁢Sb 2 using electrical transport and magnetic torque measurements, along with first-principles calculations. Our transport data reveals its compensated semimetal nature with a magnetoresistance up to around 700% at 2 K and 9 T. Analysis of de Haas–van Alphen oscillations uncovers a Fermi surface consisting of three distinct Fermi pockets with light effective masses. Comparison between the three-dimensional fermiology obtained from our oscillation data and the first-principles calculations demonstrates excellent agreement. This confirms the accuracy of the calculations, which indicate a band inversion centered at the 𝑇 point and identify the existence of nontrivial tube and needle hole Fermi pockets at Γ, alongside one trivial diamond electron pocket at the 𝐹 point in the Brillouin zone. Furthermore, symmetry and topology analysis results in two potential sets of topological invariants, suggesting the emergence of two-dimensional gapless Dirac surface states either on the 𝑎⁢𝑏 planes or on both the 𝑎⁢𝑏 planes and mirror planes, protected by crystal symmetries. Therefore, SrAg 4 ⁢Sb 2 emerges as a promising candidate topological crystalline insulator.

36 MATERIALS SCIENCE↗

Thermal activation signatures of the Anderson insulator and the Wigner solid forming near ν = 1

When interactions overcome disorder, integer quantum Hall plateaus support topological phases with different bulk insulators. In the center of the ν = 1 plateau the bulk is an Anderson-type insulator, while in the flanks of the plateau the bulk is the integer quantum Hall Wigner solid. We find that the activation energy along the ν = 1 plateau exhibits a very dramatic nonmonotonic dependence on the magnetic field, a dependence that is strongly correlated with the stability regions of the two phases. Furthermore, the activation energy has an unexpected minimum at the boundary between the Anderson insulator and the Wigner solid. Our findings constrain the theory of the integer quantum Hall Wigner solid, determine its thermodynamic properties, and reveal unusual behavior at the boundary between the Anderson insulator and the Wigner solid. Published by the American Physical Society 2024

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Full-Wave and Circuit-Based Simulations of Cable Insulation Aging/Damage Using Time-Frequency Domain Reflectometry

This paper presents a combined full-wave and circuit-based simulation study to investigate the important topic of cable insulation aging and physical damage. The analysis employs the time-frequency domain reflectometry (TFDR) technique that combines the advantages of both time domain reflectometry (TDR) and frequency domain reflectometry (FDR) for improved location identification and feature resolution. Coaxial cable sections with a location containing insulation aging or physical damage are simulated using Ansys High Frequency Structure Simulator (HFSS). Simulated scattering (S) parameters are then imported into the Advanced Design System (ADS) solver for time domain simulation where a Gaussian windowed chirp signal or ‘chirplet’ is launched. Finally, continuous wavelet transform (CWT) is applied in MATLAB to perform time-frequency analysis of the reflected waveforms. The results reveal that a small change in the relative permittivity of the insulation or the presence of a small point of physical damage on the insulation is reflected as a considerable change in the CWT magnitude demonstrating the efficacy of the method.

cable aging, Non Destructive Examination, time-fre↗

Detection of diffusion limited oxidation in thermally aged ethylene propylene rubber cable insulation material

The lifetime prediction of electrical cable insulation in nuclear power plants (NPPs) is primarily based on accelerated aging. Polymeric insulation exposed to accelerated aging at high temperatures may demonstrate diffusion limited oxidation (DLO) where oxygen within the material is consumed faster than can be supplied by diffusion from the surrounding air. This situation leads to equilibrium oxidation at the exposed surfaces and limited oxidation away from the surfaces. Therefore, DLO results in a heterogeneously aged material which can lead to underestimation of lifetime for in-service cable insulation. In this study, the presence of inhomogeneous aging caused by DLO was evaluated on cross-sectioned cable insulation specimens made of ethylene propylene rubber (EPR). The studies were performed on thermally aged specimens (165 °C, 1 day and 165 °C, 16 days) using local measurement techniques including nanoindentation, micro-Fourier transform infrared spectroscopy (FTIR), and scanning electron microscopy (SEM) - energy dispersive spectroscopy (EDS). All the results indicate some degree of heterogenous aging, with 165 °C, 16 days, aging demonstrating highest degree of oxidative degradation on the inside edges presumably caused due to copper catalyzed oxidation.

Pallaka, Madhusudhan Reddy↗

Dose Rate Effects in the Aging of Nuclear Cable Insulation Subjected to Gamma Radiation

In nuclear power plants (NPPs), the aging of polymer-based electrical cable insulation must be effectively monitored to ensure the safe and reliable operation of NPPs. Gamma radiation is one of the main environmental stressors causing degradation of cable insulation. For a given total dose of absorbed gamma radiation, damage due to gamma irradiation may be dose rate dependent. The purpose of this work is to confirm whether a dose rate effect exists for the cable insulation made by crosslinked polyethylene (XLPE) and ethylene propylene rubber (EPR), quantify the relationship between degradation rate and dose rate, and explore the correlation of different measured properties. The dose rate effects at 1800 Gy/h, 200 Gy/h, and 100 Gy/h using 60Co gamma irradiation on cable aging was studied. Different types of cable insulation, including two XLPEs and one EPR, were irradiated at the different dose rates with a total dose around 300 kGy at 26 °C. The properties of unirradiated and irradiated samples were characterized by mass change, yellowness index, and other ongoing measurements. Dose rate effects were observed for mass change data of XLPE and EPR.

Li, Donghui↗

Metal-Insulation REBCO Pancake Coil With Solder Surface Shunt: Testing and Modeling

Rare-earth barium copper oxide (REBCO) high-temperature superconducting (HTS) magnets can generate very high magnetic fields with superior engineering current density and robust mechanical integrity. The no-insulation (NI) winding technique, including its metal-insulation (MI) variant, enables “self-protection” against localized overheating through inter-turn current sharing, improving defect tolerance and allowing temporary current overloads. In REBCO pancake coils, the current-sharing path is predominantly confined to the edges of the REBCO tapes due to insulating buffer layers. Applying a surface shunt using solder can effectively enhance current sharing in NI/MI coils via the REBCO tape edges. Here, in this paper, we present both experimental and numerical research on the current distribution in surface-shunt metal-insulation (SSMI) REBCO pancake coils. We tested a stainless steel co-wound MI REBCO double-pancake coil, before and after applying a soldered surface shunt, in a saturated liquid nitrogen bath. The SSMI coil was modeled using the H-formulation and rotated anisotropic resistivity to study its dynamic behavior, including inter-turn current sharing and intra-turn screening currents. Benchmarked by experimental data, the numerical model is able to study the defect tolerance of the SSMI coil during energization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Design Considerations for High-Voltage Insulated Gate Drive Power Supply for 10-kV SiC MOSFET Applied in Medium-Voltage Converter

High-performance gate drive power supply (GDPS) plays a crucial role in ensuring the reliability and safety of the gate driver for power semiconductor devices. This article focuses on the design of a high-voltage-insulated GDPS for the 10-kV silicon carbide MOSFET in medium-voltage (MV) application. Design considerations, including insulation scheme, high-voltage-insulated transformer design, and load voltage regulation scheme, are proposed. In addition, the performance of the secondary-side-regulated (SSR) GDPS and that of the primary-side-regulated (PSR) GDPS are compared for several aspects, including interwinding capacitance, load voltage regulation rate, conversion efficiency, and hardware complexity. Finally, an SSR GDPS and a PSR GDPS, with an insulation voltage of 20 kV, are built in the lab. Furthermore, the test results demonstrate that the PSR GDPS is more preferable because of lower interwinding capacitance, lower load voltage regulation rate, higher conversion efficiency, and simpler control circuit.

42 ENGINEERING↗

Design, Analysis and Comparison of Insulated Metal Substrates for High Power Wide-Bandgap Power Modules

In this technical paper, design, analysis and comparison of insulated metal substrates for high power wide-bandgap semiconductor-based power modules is discussed. The paper starts with technical description and discussion of state-of-the-art direct bonded copper substrates with different ceramic insulators such as AlN, Al2O3 and Si3N4. This is followed by introduction of insulated metal substrates, material properties and options on each layer, and design approach for high power applications. The properties of dielectric thickness, and impact on power handling capability of the substrate are discussed. Insulated metal substrate design approach for SiC MOSFET based power modules is presented. Finite element analysis-based characterization and comparison of different designs including steady-state and transient thermal response is presented. The results show that IMS is a promising alternative to DBC in high power modules with improved transient thermal performance. IMS provides flexible building structure with multi-layer stacking options and variable thicknesses at different layers.

Gurpinar, Emre↗

Thin films of topological Kondo insulator candidate SmB 6 : Strong spin-orbit torque without exclusive surface conduction

The advent of topological insulators (TIs), a novel class of materials that harbor a metallic spin-chiral surface state coexisting with band-insulating bulk, opens up new possibilities for spintronics. One promising route is current-induced switching of an adjacent magnetic layer via spin-orbit torque (SOT), arising from the large spin-orbit coupling intrinsically possessed by TIs. The Kondo insulator SmB 6 has been recently proposed to be a strongly correlated TI, supported by the observation of a metallic surface state in bulk SmB 6 , as evidenced by the thickness independence of the low-temperature resistance plateau. We report the synthesis of epitaxial (001) SmB 6 /Si thin films and a systematic thickness-dependent electrical transport study. Although the low-temperature resistance plateau is observed for all films from 50 to 500 nm in thickness, the resistance is distinctively thickness-dependent and does not support the notion of surface conduction and interior insulation. On the other hand, we demonstrate that SmB 6 can generate a large SOT to switch an adjacent ferromagnetic layer, even at room temperature. The effective SOT generated from SmB 6 is comparable to that from β-W, one of the strongest SOT materials.

36 MATERIALS SCIENCE↗

Isostructural metal-insulator transition in VO 2

The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities.

36 MATERIALS SCIENCE↗

Dimension Effects in Insulating NbTiN Disordered Films and the Asymptotic Freedom of Cooper Pairs

This study investigates the evolution of the electronic transport in disordered NbTiN films at the insulating side of the superconductor-insulator transition as function of the effective system size along the current direction. We demonstrate that both, the threshold voltage characterizing low-temperature superinsulating phase, and the Berezinskii-Kosterlitz-Thouless criticality of the conductance above the superinsulator critical temperature, vanish upon increasing disorder taking the system far from the disorder-driven superconductor-insulator transition. We find that decrease in the system's effective size suppresses its insulating and superinsulating properties and that threshold voltage drops linearly with the diminishing system size. We demonstrate that this linear dependence can be used for experimental measurement of the linear tension of the electric string binding Cooper pairs and anti-Cooper pairs in a superinsulator.

36 MATERIALS SCIENCE↗

Identifying Two-Dimensional Z{sub 2} Antiferromagnetic Topological Insulators

We revisit the question of whether a two-dimensional topological insulator may arise in a commensurate Néel antiferromagnet, where staggered magnetization breaks the symmetry with respect to both elementary translation and time reversal, but retains their product as a symmetry. In contrast to the so-called Z{sub 2} topological insulators, an exhaustive characterization of antiferromagnetic topological phases with the help of topological invariants has been missing. We analyze a simple model of an antiferromagnetic topological insulator and chart its phase diagram, using a recently proposed criterion for centrosymmetric systems [13]. We then adapt two methods, originally designed for paramagnetic systems, and make antiferromagnetic topological phases manifest. The proposed methods apply far beyond the particular examples treated in this work, and admit straightforward generalization. We illustrate this by two examples of non-centrosymmetric systems, where no simple criteria have been known to identify topological phases. We also present, for some cases, an explicit construction of edge states in an antiferromagnetic topological insulator.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Demonstration of the Hygrothermal Performance of a Next-Generation Insulation Material in a Cold Climate

Energy loss through building walls is estimated to cost the department of defense (DOD) about $200m/year, accounting for 5% of the total energy cost in DOD facilities. This article describes the demonstration of a high-performance insulation material, called modified atmosphere insulation (MAI), to reduce wall-related heat losses in a DOD building located in Ft. Drum, New York, in a cold climate. MAI has been demonstrated to achieve R32/inch (hr-ft2-°F/Btu-in) or greater and its use can significantly increase the thermal resistance of walls with a marginal increase in wall thickness, making it an ideal candidate for retrofit application. MAI is a variant of vacuum insulation panels (VIP), produced at a substantially reduced cost resulting from a change in the evacuation process.By retrofitting walls and increasing thermal resistance, as measured by R-value, by R10-20 (h-ft2-°F/Btu), reductions of 30% or more over baseline wall-generated space conditioning loads are possible. Further, with targeted applications for older or more poorly insulated facilities, greater energy savings can be achieved. In this article, the installation of MAI panels in an existing building at Ft. Drum and the resulting energy benefits will be described. Like VIPs, MAI panels consist of an evacuated nanoporous core that is encapsulated within air and vapor impermeable barrier films. Addition of these impermeable barrier films can have implications on the moisture storage and movement within the wall systems. Therefore, in addition to the thermal performance evaluation, measurements and modeling will be used to determine the hygric behavior of the retrofitted walls.

Biswas, Kaushik↗