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At least 721 records · Page 40

Arsenic activation and compensation in single crystal CdTe bilayers

In state-of-the art polycrystalline CdTe photovoltaics, group-V dopant activation is about 2%. Low activation can create electronic defects and lead to recombination and band tail losses. To develop methods to overcome this limitation, dopant activation was systematically investigated using molecular beam epitaxy (MBE) grown single crystal bilayers of As-doped CdTe on undoped CdTe. Results suggest multiple paths for improved As-activation in polycrystalline CdTe-based devices. It was found that the carrier concentration in this MBE material saturated at ∼3 × 1016 cm−3, with high levels (>50%) of As-activation possible. High activation could be achieved with a post-growth activation temperature of ∼450 °C, when the initial doping level was below the saturation level. However, at typical polycrystalline As incorporation levels (>5 × 1016 cm−3), the excess As is inactive or compensating, requiring elevated temperatures (500–600 °C) to achieve high activation. Oxygen in the annealing ambient was detrimental, while the effect of CdCl2 in the ambient is more case-dependent. A 575 °C activation anneal was combined with a 450 °C CdCl2 treatment to better understand the implications for polycrystalline CdTe. Interestingly, on highly doped samples, processes ending with a high temperature step displayed high activation, while those ending at 450 °C significantly reduced the carrier concentration (with or without CdCl2 in the ambient). Low activation can be restored with another high temperature anneal, allowing reproducible toggling between high and low activation based on the final temperature. Photoluminescence revealed the presence of donor–acceptor pairs in the low activation state that appear to be associated with a compensating defect.

14 SOLAR ENERGY↗

Bloch ferromagnetism of composite fermions

In 1929, Felix Bloch suggested that the paramagnetic Fermi sea of electrons should make a spontaneous transition to a fully magnetized state at very low densities, because the exchange energy gained by aligning the spins exceeds the enhancement in the kinetic energy. However, experimental realizations of this effect have been hard to implement. In this work, we report the observation of an abrupt, interaction-driven transition to full magnetization, highly reminiscent of Bloch ferromagnetism. Our platform utilizes the two-dimensional Fermi sea of composite fermions near half-filling of the lowest Landau level. We measure the Fermi wavevector—which directly provides the spin polarization—and observe a sudden transition from a partially spin-polarized to a fully spin-polarized ground state as we lower the density of the composite fermions. Our theoretical calculations that take Landau level mixing into account provide a semi-quantitative account of this phenomenon.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quantum Spin Hall Edge States and Interlayer Coupling in Twisted Bilayer WTe 2

The quantum spin Hall (QSH) effect, characterized by topologically protected spin-polarized edge states, was recently demonstrated in monolayers of the transition metal dichalcogenide (TMD) WTe 2 . However, the robustness of this topological protection remains largely unexplored in van der Waals heterostructures containing one or more layers of a QSH insulator. Here, we use scanning tunneling microscopy and spectroscopy (STM/STS) to explore the topological nature of twisted bilayer (tBL) WTe 2 . Furthermore, at the tBL edges, we observe the characteristic spectroscopic signatures of the QSH edge states. For small twist angles, a rectangular moiré pattern develops, which results in local modifications of the band structure. Using first-principles calculations, we quantify the interactions in tBL WTe 2 and its topological edge states as a function of interlayer distance and conclude that it is possible to engineer the topology of WTe 2 bilayers via the twist angle as well as interlayer interactions.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Evidence for Rashba magnetism in ultrathin ferromagnet–heavy metal bilayers

Here, we show that ultrathin transition ferromagnet–heavy metal bilayers exhibit anomalous temperature- and electric bias-dependent behaviors near the Curie temperature, inconsistent with the usual Weiss magnetism. Characterization by several complementary techniques and analysis of the dependence on composition reveal that these effects originate from the interplay between interfacial spin-orbit interaction and magnetism, resulting in the emergence of a state with distinct magnetic and magnetoelectronic properties that can be described in the framework of the Rashba model as Rashba magnetism. Our findings open a route for the characterization and control of interfacial spin-orbit phenomena for efficient spin-orbitronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Analyticity and the Unruh effect: a study of local modular flow

The Unruh effect can be formulated as the statement that the Minkowski vacuum in a Rindler wedge has a boost as its modular flow. In recent years, other examples of states with geometrically local modular flow have played important roles in understanding energy and entropy in quantum field theory and quantum gravity. Here I initiate a general study of the settings in which geometric modular flow can arise, showing (i) that any geometric modular flow must be a conformal symmetry of the background spacetime, and (ii) that in a well behaved class of “weakly analytic” states, geometric modular flow must be future-directed. I further argue that if a geometric transformation is conformal but not isometric, then it can only be realized as modular flow in a conformal field theory. Finally, I discuss a few settings in which converse results can be shown — i.e., settings in which a state can be constructed whose modular flow reproduces a given vector field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effects of oxidation and impurities in lithium surfaces on the emitting wall plasma sheath

The use of lithium as a surface coating in fusion devices improves the plasma performance, but the change in the wall properties affects the secondary electron emission properties of the material. Lithium oxidizes easily, which drives the emission yield well above unity. We present here simulations demonstrating the change in the sheath structure from monotonic to the nonmonotonic space-charge limited sheath using an energy-dependent data-driven emission model, which self-consistently captures both secondary emission and backscattering populations. Increased secondary electron emission from the material has ramifications for the degradation and erosion of the wall. The results show that the oxidation leads to an increased electron energy flux into the wall and a reduced ion energy flux. The net transfer of energy to the surface is significantly greater for the oxidized case than for the pure lithium case. High backscattering rates of low-energy particles lead to a high re-emission rate at the wall.

Fusion reactors↗

Giant Exfoliation Induced Magnetic Coercivity in Fe 3 GaTe 2

Permanent magnets with strong anisotropy and high coercivity underpin modern information and energy technologies, yet rare-earth-free alternatives remain limited. Here, we show that thickness engineering via mechanical exfoliation induces hard magnetic behavior in the van der Waals ferromagnet Fe 3 GaTe 2 . Bulk crystals exhibit Curie temperatures above 350 K but negligible room-temperature coercivity. When thinned below ∼100 nm, the coercive field is dramatically enhanced, reaching nearly 1 T at room temperature for in-plane fields—comparable to conventional hard magnets. Micromagnetic analysis reveals a crossover in magnetization reversal from domain-mediated processes in bulk samples to quasi-coherent rotation in thin flakes, driven by increased effective anisotropy and suppressed domain formation. This thickness-dependent transition enables tuning of magnetic hardness without chemical modification. Combined with high saturation magnetization and robust room-temperature performance, Fe 3 GaTe 2 emerges as a promising rare-earth-free material for spintronic applications. Its layered structure further allows integration into van der Waals heterostructures, where large in-plane coercivity can stabilize magnetic states against perturbations and interlayer coupling, offering potential for high-density nonvolatile memory and domain-wall-based devices.

36 MATERIALS SCIENCE↗

Crossover from 2D Ferromagnetic Insulator to Wide Band Gap Quantum Anomalous Hall Insulator in Ultrathin MnBi 2 Te 4

Intrinsic magnetic topological insulators offer low disorder and large magnetic band gaps for robust magnetic topological phases operating at higher temperatures. By controlling the layer thickness, emergent phenomena such as the quantum anomalous Hall (QAH) effect and axion insulator phases have been realized. Furthermore, these observations occur at temperatures significantly lower than the Néel temperature of bulk MnBi 2 Te 4 , and measurement of the magnetic energy gap at the Dirac point in ultrathin MnBi 2 Te 4 has yet to be achieved. Critical to achieving the promise of this system is a direct measurement of the layer-dependent energy gap and verification of a temperature-dependent topological phase transition from a large band gap QAH insulator to a gapless TI paramagnetic phase. Here we utilize temperature-dependent angle-resolved photoemission spectroscopy to study epitaxial ultrathin MnBi 2 Te 4 . We directly observe a layer-dependent crossover from a 2D ferromagnetic insulator with a band gap greater than 780 meV in one septuple layer (1 SL) to a QAH insulator with a large energy gap (>70 meV) at 8 K in 3 and 5 SL MnBi 2 Te 4 . The QAH gap is confirmed to be magnetic in origin, as it becomes gapless with increasing temperature above 8 K.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electrical Manipulation of Topological Phases in a Quantum Anomalous Hall Insulator

Quantum anomalous Hall phases arising from the inverted band topology in magnetically doped topological insulators have emerged as an important subject of research for quantization at zero magnetic fields. Though necessary for practical implementation, sophisticated electrical control of molecular beam epitaxy (MBE)-grown quantum anomalous Hall matter have been stymied by growth and fabrication challenges. Here, in this study, a novel procedure is demonstrated, employing a combination of thin-film deposition and 2D material stacking techniques, to create dual-gated devices of the MBE-grown quantum anomalous Hall insulator, Cr-doped (Bi,Sb) 2 Te 3 . In these devices, orthogonal control over the field-induced charge density and the electric displacement field is demonstrated. A thorough examination of material responses to tuning along each control axis is presented, realizing magnetic property control along the former and a novel capability to manipulate the surface exchange gap along the latter. Through electrically addressing the exchange gap, the capabilities to either strengthen the quantum anomalous Hall state or suppress it entirely and drive a topological phase transition to a trivial state are demonstrated. The experimental result is explained using first principle theoretical calculations, and establishes a practical route for in situ control of quantum anomalous Hall states and topology.

36 MATERIALS SCIENCE↗

Symmetry Control of Unconventional Spin–Orbit Torques in IrO 2

Abstract Spin–orbit torques generated by a spin current are key to magnetic switching in spintronic applications. The polarization of the spin current dictates the direction of switching required for energy‐efficient devices. Conventionally, the polarizations of these spin currents are restricted to be along a certain direction due to the symmetry of the material allowing only for efficient in‐plane magnetic switching. Unconventional spin–orbit torques arising from novel spin current polarizations, however, have the potential to switch other magnetization orientations such as perpendicular magnetic anisotropy, which is desired for higher density spintronic‐based memory devices. Here, it is demonstrated that low crystalline symmetry is not required for unconventional spin–orbit torques and can be generated in a nonmagnetic high symmetry material, iridium dioxide (IrO 2 ), using epitaxial design. It is shown that by reducing the relative crystalline symmetry with respect to the growth direction large unconventional spin currents can be generated and hence spin–orbit torques. Furthermore, the spin polarizations detected in (001), (110), and (111) oriented IrO 2 thin films are compared to show which crystal symmetries restrict unconventional spin transport. Understanding and tuning unconventional spin transport generation in high symmetry materials can provide a new route towards energy‐efficient magnetic switching in spintronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quantum Anomalies in Condensed Matter

Quantum materials provide a fertile ground in which to test and realize unusual phenomena such as quantum anomalies predicted by quantum field theory. There are three important symmetries that are broken when classical field theory is moved into the quantum regime, the scale anomaly, the axial (chiral) anomaly, and the parity anomaly. Several potential device applications may be realized by the discovery of quantum anomalies in condensed matter, enabled by the new physics they embody, including ultra‐sensitive dark matter detectors, far infrared optical modulators, micro‐bolometric detectors, low‐dissipation ballistic transporters, terahertz‐based qubits, terahertz polarization state controls, passive magnetic field sensors, stable topological superconductors that host Majorana fermions, and qubits topologically protected against decoherence. In this perspective article, the definition of these quantum anomalies is laid out, how little is known in the context of condensed matter, and how quantum anomalies are predicted to manifest as anomalous electronic, thermal, and magnetic behavior in experiments on topological quantum materials, including Weyl and Dirac semimetals. Furthermore, the importance that mechanical strain and defects will play in modifying signatures of quantum anomalies is discussed.

36 MATERIALS SCIENCE↗

Density Dependence of the Phases of the v = 1 Integer Quantum Hall Plateau in Low Disorder Electron Gases

Recent magnetotransport measurements in low-disorder electron systems confined to GaAs/AlGaAs samples reveal that the v = 1 integer quantum Hall plateau is broken into three distinct regions. These three regions are associated with two phases with different types of bulk localization: the Anderson insulator is due to random quasiparticle localization, and the integer quantum Hall Wigner solid is due to pinning of a stiff quasiparticle lattice. Universal properties of the v = 1 plateau are highlighted: the structure of the stability diagram, the nonmonotonic dependence of the activation energy on the filling factor, and the alignment of features of the activation energy with features of the stability regions of the different phases are found to be similar in three samples spanning a wide range of electron densities. Quantitative differences between the samples are also discussed, such as the dependence of the onset temperature and the activation energy of the integer quantum Hall Wigner solid on the electron density. The findings provide insights into the localization behavior along the v = 1 integer quantum Hall plateau in the low disorder regime.

Anderson insulator↗

Two-loop MHV form factors from the periodic Wilson loop

We discuss how to compute maximal-helicity-violating (MHV) form factors for the chiral part of the stress-tensor supermultiplet from periodic light-like polygon Wilson loops in planar $\mathcal{N}$ = 4 super Yang-Mills theory beyond the one-loop level. We show that the periodicity imposes path ordering on points on different edges, which explains the appearance of square roots coming from non-planar Feynman diagrams. Taking such diagrams into account, we provide the integrand of the two-loop n-particle MHV form factor, compute all diagrams, prove the cancellation of divergences and finally compute the two-loop 5-particle and 6-particle form factors as examples.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Green’s functions on a renormalized lattice: An improved method for the integer quantum Hall transition

Highlights: • Speed up of numerical calculations by exact renormalization group steps. • Practical approach to handle delicate scaling analysis. • Absence of evidence to prefer marginal corrections over power-law corrections. We introduce a performance-optimized method to simulate localization problems on bipartite tight-binding lattices. It combines an exact renormalization group step to reduce the sparseness of the original problem with the recursive Green’s function method. We apply this framework to investigate the critical behavior of the integer quantum Hall transition of a tight-binding Hamiltonian defined on a simple square lattice. In addition, we employ an improved scaling analysis that includes two irrelevant exponents to characterize the shift of the critical energy as well as the corrections to the dimensionless Lyapunov exponent. We compare our findings with the results of a conventional implementation of the recursive Green’s function method, and we put them into broader perspective in view of recent development in this field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Generalized multifractality at spin quantum Hall transition

Generalized multifractality characterizes scaling of eigenstate observables at Anderson-localization critical points. We explore generalized multifractality in 2D systems, with the main focus on the spin quantum Hall (SQH) transition in superconductors of symmetry class C. Relations and differences with the conventional integer quantum Hall (IQH) transition are also studied. Using the field-theoretical formalism of non-linear sigma-model, we derive the pure-scaling operators representing generalizing multifractality and then “translate” them to the language of eigenstate observables. Performing numerical simulations on network models for SQH and IQH transitions, we confirm the analytical predictions for scaling observables and determine the corresponding exponents. Remarkably, the generalized-multifractality exponents at the SQH critical point strongly violate the generalized parabolicity of the spectrum, which implies violation of the local conformal invariance at this critical point.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Quantum anomalous Hall insulator phases in Fe-doped GaBi honeycomb

We discuss electronic and magnetic properties of the Fe-doped GaBi honeycomb using first principles calculations. Our analysis shows that the pristine GaBi honeycomb transitions from being a two-dimensional quantum spin Hall (QSH) insulator to a quantum anomalous Hall (QAH) insulator when it is doped with one Fe atom in a 4 × 4 GaBi honeycomb. Additionally, the QAH phase in Fe-doped GaBi is found to be robust in that it maintains its Chern number (C = 1) under fairly large strains (~ 4%) and supports a gap as large as 112 meV at 2.21% strain. The QAH phase is also retained when the Fe-doped GaBi is placed on a CdTe substrate, suggesting that Fe-doped GaBi films could be useful for spintronics applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Spark plasma sintered, MoNbTi-based multi-principal element alloys with Cr, V, and Zr

MoNbTi, MoNbTiZr, CrMoNbTiZr, and MoNbTiVZr multi-principal element alloys (MPEAs) were fabricated via spark plasma sintering (SPS) and investigated for use in high-strength applications. The fabrication method by SPS and powder metallurgy differs from those presented in the prior literature, where most MPEAs are fabricated using arc melting (AM) methods. Here cryogenic milling was used to maximize potential defect sinks (grain boundaries) for radiation resistance and to increase ultimate tensile strength through the Hall-Petch effect. SPS was chosen for consolidation in order to maintain a fine-grained structure during densification. Each alloy was characterized using x-ray diffraction and scanning electron microscopy for phase identification and compositional homogeneity. The base ternary alloy MoNbTi presented a predominantly single BCC system with minor cubic phases. The introduction of additional alloying elements—Zr, V, and Cr—heightened the phase complexity and increased the fractions of a secondary BCC phase and an HCP phase from Zr. The addition of Cr induced a larger fraction of the Laves phase to form. The addition of V caused the precipitation of small Mo inclusions. Thermodynamic analysis was performed to understand the separation of phases in each alloy. Discrepancies among the phase predictions generated by thermodynamic models, phases previously presented in the literature, and the characterization results suggest that MPEA fabrication methods, especially solid-state methods, require significant investigation to ensure that alloys can remain stable throughout their anticipated service lifetimes.

36 MATERIALS SCIENCE↗

Metal-insulator transition temperature in EuO 1−x films as a function of exposure time in air

Oxygen-deficient Europium monoxide EuO 1-x shows a metal-to-insulator transition near the Curie temperature (T C ). A systematic transport study of EuO 1-x thin films as a function of exposure time in air reveals a gradually decreased T C from 140 K to 70 K as the concentration of the oxygen vacancies decreases, which is accompanied by a drastic increase in the resistance. Here we also find an unusual enhancement of magnetic anisotropy in the transport measurements, which results from the strong spin-orbit coupling at the interface between the film and substrate and possible presence of spin-textures like skyrmions in EuO 1-x .

36 MATERIALS SCIENCE↗