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At least 721 records · Page 40

Temporal changes of seismic velocities in the San Jacinto Fault zone associated with the 2016 M w 5.2 Borrego Springs earthquake

We study temporal changes of seismic velocities associated with the 10 June 2016 Mw 5.2 Borrego Springs earthquake in the San Jacinto fault zone, using nine component Green's function estimates reconstructed from daily cross correlations of ambient noise. The analysed data are recorded by stations in two dense linear arrays, at Dry Wash (DW) and Jackass Flat (JF), crossing the fault surface trace ~3 km northwest and southeast of the event epicentre. The two arrays have 9 and 12 stations each with instrument spacing of 25–100 m. Relative velocity changes (δv/v) are estimated from arrival time changes in the daily correlation coda waveforms compared to a reference stack. The obtained array-average δv/v time-series exhibit changes associated with the Borrego Springs event, superposed with seasonal variations. The earthquake-related changes are characterized by a rapid coseismic velocity drop followed by a gradual recovery. This is consistently observed at both arrays using time- and frequency-domain δv/v analyses with data from different components in various frequency bands. Larger changes at lower frequencies imply that the variations are not limited to the near surface material. A decreasing coseismic velocity reduction with coda wave lapse time indicates larger coseismic structural perturbations in the fault zone and near-fault environment compared to the surrounding rock. Observed larger changes at the DW array compared to the JF array possibly reflect the northwestward rupture directivity of the Borrego Springs earthquake.

Geochemistry & Geophysics↗

Electrochemical Electron Transfer and Proton-Coupled Electron Transfer: Effects of Double Layer and Ionic Environment on Solvent Reorganization Energies

Electron transfer and proton coupled electron transfer (PCET) reactions at electrochemical interfaces play an essential role in a broad range of energy conversion processes. The reorganization energy, which is a measure of the free energy change associated with solute and solvent rearrangements, is a key quantity for calculating rate constants for these reactions. We present a computational method for including the effects of the double layer and ionic environment of the diffuse layer in calculations of electrochemical solvent reorganization energies. This approach incorporates an accurate electronic charge distribution of the solute within a molecular-shaped cavity in conjunction with a dielectric continuum treatment of the solvent, ions, and electrode using the integral equations formalism polarizable continuum model. The molecule-solvent boundary is treated explicitly, but the effects of the electrode-double layer and double layer-diffuse layer boundaries, as well as the effects of the ionic strength of the solvent, are included through an external Green’s function. The calculated total reorganization energies agree well with experimentally measured values for a series of electrochemical systems, and the effects of including both the double layer and ionic environment are found to be very small. This general approach was also extended to electrochemical PCET and produced total reorganization energies in close agreement with experimental values for two experimentally studied PCET systems. This research was supported as part of the Center for Molecular Electrocatalysis, an Energy Frontier Research Center, funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences.

Ghosh, Soumya↗

Enhanced electrocaloric effect in displacive-type organic ferroelectrics

We explore the intrinsic feature of electrocaloric effect (ECE) accompanied by ferroelectric (FE)-paraelectric (PE) transition for displacive-type organic ferroelectrics using Green's function theory. It is demonstrated that decreasing elastic constant K or increasing spin-lattice coupling λ can enhance the ECE, as well as polarization P and transition temperature T{sub C}. Indeed, one expects that the optimal operating temperature for solid-state refrigeration is around room temperature, at which the ECE achieves its maximum. As T{sub C} is tuned to ∼310 K, it presents larger ECE response and remanent polarization with lower coercive field for smaller K value, suggesting that well flexible displacive-type organic ferroelectrics are excellent candidates both for electric cooling and data storage in the design of nonvolatile FE random-access memories. Furthermore, in an electric field, it provides a bridge between a Widom line that denotes FE-PE crossover above T{sub C} and a metaelectric transition line below T{sub C} that demonstrates an FE switching behavior with an antiparallel field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Spin relaxation in graphene nanoribbons in the presence of substrate surface roughness

In this work, spin transport in corrugated armchair graphene nanoribbons (AGNRs) is studied. We survey combined effects of spin-orbit interaction and surface roughness, employing the non-equilibrium Green's function formalism and multi-orbitals tight-binding model. Rough substrate surfaces have been statistically generated and the hopping parameters are modulated based on the bending and distance of corrugated carbon atoms. The effects of surface roughness parameters, such as roughness amplitude and correlation length, on spin transport in AGNRs are studied. The increase of surface roughness amplitude results in the coupling of σ and π bands in neighboring atoms, leading to larger spin flipping rate and therefore reduction of the spin-polarization, whereas a longer correlation length makes AGNR surface smoother and increases spin-polarization. Moreover, spin diffusion length of carriers is extracted and its dependency on the roughness parameters is investigated. In agreement with experimental data, the spin diffusion length for various substrate ranges between 2 and 340 μm. Our results indicate the importance of surface roughness on spin-transport in graphene.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Spin–spin correlation length in a two-dimensional frustrated magnet and its relation to doping

In a spherically symmetric self-consistent approach (SSSA), the spin-1/2 J{sub 1}–J{sub 2} Heisenberg model on a two-dimensional square lattice is considered for two-time retarded spin–spin Green’s functions. The spin excitation spectrum, ω(q), and spin gaps at symmetric points are obtained for the entire J{sub 1}–J{sub 2} diagram, i.e., for any ϕ, J{sub 1} = cosϕ, and J{sub 2} = sinϕ. The structure factor c{sub q} and the correlation length ξ at finite temperature are calculated in the entire range of parameters. A radical difference in the behavior of the system in the upper, frustrated (0 ⩽ ϕ ⩽ π), and the lower, nonfrustrated (π ⩽ ϕ ⩽ 2π), regions of the diagram is demonstrated. In the latter region, there is a first-order phase transition that is unique on the phase diagram. For a weakly frustrated antiferromagnet (J{sub 1} > J{sub 2} > 0), the results obtained are compared with the experimental dependence of ξ on temperature and doping level. A correspondence rule is proposed between frustration in a spin model and the doping of an antiferromagnet with holes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

On the channel width-dependence of the thermal conductivity in ultra-narrow graphene nanoribbons

The thermal conductivity of low-dimensional materials and graphene nanoribbons, in particular, is limited by the strength of line-edge-roughness scattering. One way to characterize the roughness strength is the dependency of the thermal conductivity on the channel's width in the form W{sup β}. Although in the case of electronic transport, this dependency is very well studied, resulting in W{sup 6} for nanowires and quantum wells and W{sup 4} for nanoribbons, in the case of phonon transport it is not yet clear what this dependence is. In this work, using lattice dynamics and Non-Equilibrium Green's Function simulations, we examine the width dependence of the thermal conductivity of ultra-narrow graphene nanoribbons under the influence of line edge-roughness. We show that the exponent β is in fact not a single well-defined number, but it is different for different parts of the phonon spectrum depending on whether phonon transport is ballistic, diffusive, or localized. The exponent β takes values β < 1 for semi-ballistic phonon transport, values β ≫ 1 for sub-diffusive or localized phonons, and β = 1 only in the case where the transport is diffusive. The overall W{sup β} dependence of the thermal conductivity is determined by the width-dependence of the dominant phonon modes (usually the acoustic ones). We show that due to the long phonon mean-free-paths, the width-dependence of thermal conductivity becomes a channel length dependent property, because the channel length determines whether transport is ballistic, diffusive, or localized.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Logarithmic divergences in the k-inflationary power spectra computed through the uniform approximation

We investigate a calculation method for solving the Mukhanov-Sasaki equation in slow-roll k-inflation based on the uniform approximation (UA) in conjunction with an expansion scheme for slow-roll parameters with respect to the number of e-folds about the so-called turning point. Earlier works on this method have so far gained some promising results derived from the approximating expressions for the power spectra among others, up to second order with respect to the Hubble and sound flow parameters, when compared to other semi-analytical approaches (e.g., Green's function and WKB methods). However, a closer inspection is suggestive that there is a problem when higher-order parts of the power spectra are considered; residual logarithmic divergences may come out that can render the prediction physically inconsistent. Looking at this possibility, we map out up to what order with respect to the mentioned parameters several physical quantities can be calculated before hitting a logarithmically divergent result. It turns out that the power spectra are limited up to second order, the tensor-to-scalar ratio up to third order, and the spectral indices and running converge to all orders. This indicates that the expansion scheme is incompatible with the working equations derived from UA for the power spectra but compatible with that of the spectral indices. For those quantities that involve logarithmically divergent terms in the higher-order parts, existing results in the literature for the convergent lower-order parts calculated in the equivalent fashion should be viewed with some caution; they do not rest on solid mathematical ground.

79 ASTRONOMY AND ASTROPHYSICS↗

Nernst and Seebeck effects in HgTe/CdTe topological insulator

The Seebeck and Nernst effects in HgTe/CdTe quantum wells are studied using the tight-binding Hamiltonian and the nonequilibrium Green's function method. The Seebeck coefficient, S{sub c}, and the Nernst coefficient, N{sub c}, oscillate as a function of E{sub F}, where E{sub F} is the Fermi energy. The Seebeck coefficient shows peaks when the Fermi energy crosses the discrete transverse channels, and the height of the nth peak of the S{sub c} is [ln2/(1/2 +|n|)] for E{sub F} > 0. For the case E{sub F} < 0, the values of the peaks are negative, but the absolute values of the first five peaks are the same as those for E{sub F} > 0. The 6th peak of S{sub c} reaches the value [ln2/1.35] due to a higher density of states. When a magnetic field is applied, the Nernst coefficient appears. However, the values of the peaks for N{sub c} are all positive. For a weak magnetic field, the temperature suppresses the oscillation of the Seebeck and Nernst coefficients but increases their magnitude. For a large magnetic field, because of the highly degenerate Landau levels, the peaks of the Seebeck coefficient at position E{sub F}=−12, 10, 28meV, and Nernst coefficient at E{sub F}=−7, 10meV are robust against the temperature.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Photon-assisted tunneling through a topological superconductor with Majorana bound states

Employing the Keldysh Nonequilibrium Green’s function method, we investigate time-dependent transport through a topological superconductor with Majorana bound states in the presence of a high frequency microwave field. It is found that Majorana bound states driven by photon-assisted tunneling can absorb(emit) photons and the resulting photon-assisted tunneling side band peaks can split the Majorana bound state that then appears at non-zero bias. This splitting breaks from the current opinion that Majorana bound states appear only at zero bias and thus provides a new experimental method for detecting Majorana bound states in the Non-zero-energy mode. We not only demonstrate that the photon-assisted tunneling side band peaks are due to Non-zero-energy Majorana bound states, but also that the height of the photon-assisted tunneling side band peaks is related to the intensity of the microwave field. It is further shown that the time-varying conductance induced by the Majorana bound states shows negative values for a certain period of time, which corresponds to a manifestation of the phase coherent time-varying behavior in mesoscopic systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Controllable spin polarization and spin filtering in a zigzag silicene nanoribbon

Using non-equilibrium Green's function, we study the spin-dependent electron transport properties in a zigzag silicene nanoribbon. To produce and control spin polarization, it is assumed that two ferromagnetic strips are deposited on the both edges of the silicene nanoribbon and an electric field is perpendicularly applied to the nanoribbon plane. The spin polarization is studied for both parallel and anti-parallel configurations of exchange magnetic fields induced by the ferromagnetic strips. We find that complete spin polarization can take place in the presence of perpendicular electric field for anti-parallel configuration and the nanoribbon can work as a perfect spin filter. The spin direction of transmitted electrons can be easily changed from up to down and vice versa by reversing the electric field direction. For parallel configuration, perfect spin filtering can occur even in the absence of electric field. In this case, the spin direction can be changed by changing the electron energy. Finally, we investigate the effects of nonmagnetic Anderson disorder on spin dependent conductance and find that the perfect spin filtering properties of nanoribbon are destroyed by strong disorder, but the nanoribbon retains these properties in the presence of weak disorder.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effects of local field and inherent strain in reflectance anisotropy spectra of A{sup III}B{sup V} semiconductors with naturally oxidized surfaces

Reflectance anisotropy (RA) spectra of naturally oxidized (001) surfaces of GaAs and InAs crystals are measured for photon energies from 1.5 up to 5.5 eV. The differential high-accuracy RA spectra reveal features substantially different from those caused by either a reconstruction of clean surface or a built-in near-surface electric field. Models of atomic structure with anisotropic transition layers of excess arsenic atoms specific for GaAs(001)/oxide and InAs(001)/oxide interfaces are proposed. In conformity with these models, a general theory of reflectance anisotropy is developed for semiconductor/oxide interfaces within the Green's function technique. The theory takes into account the combined effect of local field due to interface dipoles and of intrinsic near-surface strain of the crystal. Measured RA spectra are analyzed in the model of valence-bond dipoles occupying a rectangular lattice in a multilayer medium. Comparing the measured and calculated spectra, we conclude that RA spectra of oxidized GaAs(001) and InAs(001) surfaces are simultaneously influenced by interface and near-surface anisotropies. The former is responsible for the broad-band spectral features which are associated with polarizability of the valence bonds attached to As atoms at the crystal/oxide interface. The near-surface anisotropy is due to inherent uniaxial straining the near-surface region of crystal. The effect of strain on RA spectra is experimentally and theoretically substantiated for GaAs crystal wafers undergone a uniaxial applied stress. Basically, this work results in the following. It establishes the physical nature of different levels of RA spectra observed in a majority of papers, but never analyzed. It demonstrates how the studied features of RA spectra could be applied for optical characterization of strained interfaces and atomic layers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Theoretical Study of Superconducting Gap Parameters, Density of States, and Condensation Energy of Two-Band Iron-Based Superconductor BaFe{sub 2}(As{sub 1−x}P{sub x}){sub 2}

This research work focuses on the theoretical study of superconducting gap parameters, density of states, and condensation energy of two-band iron-based superconductor BaFe{sub 2}(As{sub 1−x}P{sub x}){sub 2}. By developing a model Hamiltonian for the given system and by using the double time temperature-dependent Green’s function formalism, we obtained mathematical expressions for superconducting order parameters for the electron intra-band (Δ{sub e}), hole intra-band (Δ{sub h}), inter-band between the two bands (Δ{sub eh}) and superconducting transition temperature (T{sub C}). Furthermore, we obtained the density of states for each intra-band, N(ε) and condensation energy (E{sub c}) for BaFe{sub 2}(As{sub 1−x}P{sub x}){sub 2}. By using the experimental values and by considering some plausible approximations of the parameters in the obtained expressions, phase diagrams of superconducting order parameters for Δ{sub e}, Δ{sub h}, and Δ{sub eh} versus temperature and superconducting transition temperature (T{sub C}) versus the inter-band pairing potential (V{sub eh}) are plotted. We also plotted the density of states for the electron intra-band, N{sub e}(ε) and hole intra-band, N{sub h}(ε) versus excitation energy (ε) at T = 0K, and the variation of density of states with temperature. Similarly, phase diagrams of condensation energy (E{sub c}) versus temperature, inter-band pairing potential, and superconducting transition temperature are plotted for the material. Our results are in agreement with previous findings.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

GW and Bethe-Salpeter study of small water clusters

We study within the GW and Bethe-Salpeter many-body perturbation theories the electronic and optical properties of small (H{sub 2}O){sub n} water clusters (n = 1-6). Comparison with high-level CCSD(T) Coupled-Cluster at the Single Double (Triple) levels and ADC(3) Green’s function third order algebraic diagrammatic construction calculations indicates that the standard non-self-consistent G{sub 0}W{sub 0}@PBE or G{sub 0}W{sub 0}@PBE0 approaches significantly underestimate the ionization energy by about 1.1 eV and 0.5 eV, respectively. Consequently, the related Bethe-Salpeter lowest optical excitations are found to be located much too low in energy when building transitions from a non-self-consistent G{sub 0}W{sub 0} description of the quasiparticle spectrum. Simple self-consistent schemes, with update of the eigenvalues only, are shown to provide a weak dependence on the Kohn-Sham starting point and a much better agreement with reference calculations. The present findings rationalize the theory to experiment possible discrepancies observed in previous G{sub 0}W{sub 0} and Bethe-Salpeter studies of bulk water. The increase of the optical gap with increasing cluster size is consistent with the evolution from gas to dense ice or water phases and results from an enhanced screening of the electron-hole interaction.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Quantum confinement in self-assembled two-dimensional nanoporous honeycomb networks at close-packed metal surfaces

Quantum confinement of a two-dimensional electron gas by supramolecular nanoporous networks is investigated using the boundary elements method based on Green’s functions for finite geometries and electron plane wave expansion for periodic systems. The “particle in a box” picture was analyzed for cases with selected symmetries that model previously reported architectures constructed from organic and metal-organic scattering centers confining surface state electrons of Ag(111) and Cu(111). First, by analyzing a series of cases with systematically defined parameters (scattering geometry, potentials, and effective broadening), we demonstrate how the scattering processes affect the properties of the confined electrons. For the features of the local density of states reported by scanning tunneling spectroscopy (STS), we disentangle the contributions of lifetime broadening and splitting of quantum well states due to coupling of neighboring quantum dots. For each system, we analyze the local electron density distribution and relate it to the corresponding band structure as calculated within the plane-wave expansion framework. Then, we address two experimental investigations, where in one case only STS data and in the other case mainly angle-resolved photoemission spectroscopy (ARPES) data were reported. In both cases, the experimental findings can be successfully simulated. Furthermore, the missing information can be complemented because our approach allows to correlate the information obtained by STS with that of ARPES. The combined analysis of several observations suggests that the scattering potentials created by the network originate primarily from the adsorbate-induced changes of the local surface dipole barrier.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Atomistic modeling of energy band alignment in CdSeTe surfaces

Atomistic modeling based on Desnity Functional Theory (DFT)- 1/2 method coupled with surface Green’s function has been employed to investigate the energy band alignment results in cadmium selenium telluride (CdSeTe) surfaces. The structural and electronic properties of the bulk ternary alloy were established before cleaving the CdSeTe low index surface facets. The dependency of atomic-scale electronic features on different plane orientations was explored by studying the energy band alignment diagrams in the unreconstructed and reconstructed surfaces. While the low index CdSeTe surface geometry reconstructions replicate the CdTe surface geometries, the energy band alignment features of the unreconstructed and reconstructed CdSeTe surfaces differ from those observed in CdTe low index surfaces. The structurally relaxed reconstructed CdSeTe surface results in purely flat bands as opposed to an internal cusp feature observed in CdTe surfaces. The presence of an internal energy cusp in CdTe(111) surfaces is expected to play a key role in enhancing the hole charge transport towards the back of CdTe-only solar cell device and the absence of such feature in CdSeTe surface may explain one of the reason for the lower performance of CdSeTe-only solar cell seen experimentally.

36 MATERIALS SCIENCE↗

A linear response framework for quantum simulation of bosonic and fermionic correlation functions

Response functions are a fundamental aspect of physics; they represent the link between experimental observations and the underlying quantum many-body state. However, this link is often under-appreciated, as the Lehmann formalism for obtaining response functions in linear response has no direct link to experiment. Within the context of quantum computing, and via a linear response framework, we restore this link by making the experiment an inextricable part of the quantum simulation. This method can be frequency- and momentum-selective, avoids limitations on operators that can be directly measured, and can be more efficient than competing methods. As prototypical examples of response functions, we demonstrate that both bosonic and fermionic Green’s functions can be obtained, and apply these ideas to the study of a charge-density-wave material on the ibm_auckland superconducting quantum computer. The linear response method provides a robust framework for using quantum computers to study systems in physics and chemistry.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Selective sensing of ethylene and glucose using carbon-nanotube-based sensors: an ab initio investigation

Functionalized carbon nanotubes have great potential for nanoscale sensing applications, yet many aspects of their sensing mechanisms are not understood. Here, two paradigmatic sensor configurations for detection of biologically important molecules are investigated through ab initio calculations: a non-covalently functionalized nanotube for glucose detection and a covalently functionalized nanotube for ethylene detection. Glucose and ethylene control key life processes of humans and plants, respectively, despite of their structural and chemical simplicity. The sensors’ electrical conductance and transmission coefficients are evaluated at the full density-functional theory level via the non-equilibrium Green's function method. We also investigate the effects of the density of the receptors, the band gaps of the nanotubes, the source–drain voltages, and the atomic modification of the receptor on detection sensitivities. A clear atomistic picture emerges about the mechanisms involved in glucose and ethylene sensing. While semiconducting nanotubes exhibit good sensitivities in both cases, the current through metallic nanotubes is only weakly affected by analyte attachment. These quantitative results could guide the design of improved sensors.

Chemistry↗

Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study

The impact of the scaling of the channel length on the performances of metal-oxide-semiconductor field effect transistors, based on two-dimensional (2D) channel materials, is theoretically investigated, using density functional theory combined with the non-equilibrium Green's function method. It is found that the scaling of the channel length below 10 nm leads to strong device performance degradations. Our simulations reveal that this degradation is essentially due to the tunneling current flowing between the source and the drain in these aggressively scaled devices. It is shown that this electron tunneling process is modulated by the effective mass of the 2D channel material, and sets the limit of the scaling in future transistor designs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗