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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Annealing experiments in the temperature range 1100-1275 C have been performed on p-type Si(0.8)Ge(0.2) samples with BP, B(6.5)P, and GaSb material additives. Both electrical resistivity and Seebeck coefficient generally decrease for these samples as annealing temperature is increased, with thermoelectric power factor sometimes being improved by annealing.
The question of the origin of ureilites was reexamined using new data obtained by radiochemical NAA for Ag, Au, Bi, Br, Cd, Cs, Ge, In, Ir, Ni, Pd, Os, Rb, Re, Sb, Se, Te, Tl, U, and Zn in two vein separates from Haveroe and Kenna and a bulk sample of Kenna. Vein material was found to be enriched in all elements analyzed, except Zn, and to account for most of the carbon, noble gases, and, presumably, siderophiles in the meteorite. The results support the earlier interpretation of Higuchi et al. (1976) on the composition of ureilite parent body (similar to C3V or H3, but not C3O chondrites).
The GeSe:GeI4 vapor crystal growth system was characterized mass spectroscopically. A steady-state Knudsen effusion technique was developed to simulate the equilibrium conditions at one end of a vapor transport ampoule. It was found that the previously neglected equilibrium GeSe2(s) = GeSe(v) + 1/2Se2(v) reduces the Se2(v) concentration to an extent that sublimation/condensation of GeSe becomes the dominant transport mechanism. At total pressures near 1 atm the concentration of an additional Ge-Se-I vapor species becomes comparable to that of GeSe(v).
Absolute intensities and H2-broadened half-widths of R(0) and R(1) of Ge-72H4 have been measured at 119.5, 150.3, 199.0, 250.0, and 296.0 K using a tunable diode laser and the sweep integration technique. The combined intensity of the nu3 bands of all of the five isotopic species of GeH4 as well as that of the Q-branches alone have been measured independently at 294 K using the Wilson-Wells-Penner-Weber technique.
An optimized leaf-spring apparatus for applying uniaxial stress to a Ge:Ga far-IR photoconductor has been designed and tested. This design has significant advantages for space applications which require high quantum efficiency and stable operation over long periods of time. The important features include adequate spring deflection with relatively small overall size, torque-free stress, easy measurement of applied stress, and a detector configuration with high responsivity. One-dimensional arrays of stressed photoconductors can be constructed using this design. A peak responsivity of 38 A/W is achieved in a detector with a cutoff wavelength of 200 microns, which was operated at a temperature of 2.0 K and a bias voltage equal to one-half of the breakdown voltage.
Existing analyses of the pulsed response of an MOS capacitor for minority-carrier lifetime determination result in a lifetime value averaged over most of the depletion region width. In this report, an analysis of MOS C-t data is presented that enables minority-carrier generation lifetime to be plotted as a function of depletion region depth. The technique is shown to be useful for samples with bulk or buried interfacial layer defects that have defect-free surfaces. Data are presented for intrinsically gettered bulk crystals and extrinsically gettered Si(2-pct Ge) epitaxial layers with misfit dislocations. In addition, for samples that do have uniform lifetimes, the measurement time required for determining carrier lifetime has been reduced by more than an order of magnitude.
Two materials, sapphire and synthetic quartz, have been found for use in Ge detector mounting assemblies. These materials combine desirable mechanical, thermal, and electrical properties with the radioactive cleanliness required to detect minimal amounts of K, Th, and U.
This paper describes the measurements of the ultraheavy cosmic ray abundances obtained by the Heavy Nuclei Experiment aboard the NASA High Energy Astronomy Observatory-3. It is found that the cosmic ray abundances are in broad agreement with solar system abundances with a step-FIP fractionation model applied although in detail there are some differences. In particular, Ge and Pb appear to be underabundant in the cosmic radiation. Although the platinum/lead ratio and the actinides are consistent with some r-process enhancement, the cosmic ray source is not dominated by the r-process up through the 50s as evidenced by the Sr/Rb ratio and by the abundance of Sn and Ba. The actinides are not greatly enhanced, ruling out freshly synthesized r-process production as the primary source of the heavy cosmic rays.
Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.
Thermoelectric energy conversion utilizing nuclear heat sources has been employed for several decades to generate power for deep space probes. In the past, lead telluride and, more recently, silicon-germanium alloys have been the prime choices as thermoelectric materials for this application. Currently, a number of refractory semiconductors are under investigation at the Jet Propulsion Laboratory in order to produce power sources of higher conversion efficiency and, thus, lower mass per unit of power output. Included among these materials are improved Si-Ge alloys, rare earth compounds and boron-rich borides. The criteria used to select thermoelectric materials, in general, and the above materials, in particular, will be discussed. The current state of the art and the accomplishments to date in thermoelectric materials research will be reviewed.
Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.
A scheme for nonvolatile associative electronic memory storage with high information storage density is proposed which is based on neural network models and which uses a matrix of two-terminal passive interconnections (synapses). It is noted that the massive parallelism in the architecture would require the ON state of a synaptic connection to be unusually weak (highly resistive). Memory switching using a-Si:H along with ballast resistors patterned from amorphous Ge-metal alloys is investigated for a binary programmable read only memory matrix. The fabrication of a 1600 synapse test array of uniform connection strengths and a-Si:H switching elements is discussed.
A development status evaluation is presented for solid-state self-scanned imaging arrays applicable to NASA space science missions, giving attention to the visible and IR spectral range (0.5-1000 microns). Shortward of 1.1 micron, Si CCDs will continue to be used. Beyond 10 microns, the challenge for NASA researchers lies in the development of a class of detectors that can dispense with the conventional cooling to below 10 K. Above 25 microns, extrinsic Ge detectors will be used, and beyond 200 microns, a novel extrinsic material such as GaAs will have to be developed for this application.
Extremely low alloyed and nonalloyed ohmic contact resistances have been formed on n-type InAs/In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As structures grown on InP(Fe) by molecular-beam epitaxy. To insure the accuracy of the small contact resistances measured, an extended transmission line model was used to extrapolate contact resistances from test patterns with multiple gap spacings varying from 1 to 20 microns. For a 150-A-thick InAs layer doped to 2 x 10 to the 18th/cu cm and a 0.1-micron-thick InGaAs layer doped to 1 x 10 to the 18th/cu cm, a specific contact resistance of 2.6 x 10 to the -8th ohm-asterisk sq cm was measured for the nonalloyed contact, while a resistance less than 1.7 x 10 to the -8th ohm-asterisk sq cm is reported for the alloyed contact. Conventional Au-Ge/Ni/Au was used for the ohmic metal contact and alloying was performed at 500 C for 50 s in flowing H2. Using a thermionic field emission model, the barrier height at the InAs/InGaAs interface was calculated to be 20 meV.
The 10-micron intersubband absorption in quantum wells made of the silicon-based system, Si/Si(1-x)Ge(x), has been calculated. The necessary details of the effective-mass anisotropy are included in the present analysis. It is found that it is readily possible to achieve an absorption constant of order of 10,000/cm in Si quantum wells with current doping technology. For 110-line and 111-line growth directions, a further advantage of Si quantum wells is pointed out, namely, an allowed absorption at normal incidence due to the anisotropic effective mass in Si.
Report presents theoretical analysis of cracking in Si and GaAs solar photovoltaic cells subjected to bending or twisting. Analysis also extended to predict critical sizes for cracks in Ge substrate coated with thin film of GaAs. Analysis leads to general conclusions. Approach and results of study useful in development of guidelines for acceptance or rejection of slightly flawed cells during manufacture.
Within the framework of the proposed research, emphasis was placed on application of magnetic fields to semiconductor growth systems. It was found that magnetic fields up to 3 kGauss do not affect the growth behavior nor the macro-segregation behavior in the system Ge(Ga). Applied fields are found to significantlty alter the radial dopant distribution, which is attributed to alterations in the spatial orientation of convective cells. Increasing the magnetic field to 30 kGauss is found to have a fundamental effect on dopant segregation. Emphasis is also placed on the potential of KC-135 flights for preliminary studies on the effects of reduced gravity environments on the wetting behavior of semiconductor systems in growth configuration. The limited number of experiments conducted does not allow any conclusions on the merits of KC-135 flights for semiconductor processing research.
The Engineering Orbit Analysis Unit at GE Valley Forge used an Intel Hypercube Parallel Processor to investigate the performance and gain experience of parallel processors with a multi-satellite orbit determination problem. A general study was selected in which major blocks of computation for the multi-satellite orbit computations were used as units to be assigned to the various processors on the Hypercube. Problems encountered or successes achieved in addressing the orbit determination problem would be more likely to be transferable to other parallel processors. The prime objective was to study the algorithm to allow processing of observations later in time than those employed in the state update. Expertise in ephemeris determination was exploited in addressing these problems and the facility used to bring a realism to the study which would highlight the problems which may not otherwise be anticipated. Secondary objectives were to gain experience of a non-trivial problem in a parallel processor environment, to explore the necessary interplay of serial and parallel sections of the algorithm in terms of timing studies, to explore the granularity (coarse vs. fine grain) to discover the granularity limit above which there would be a risk of starvation where the majority of nodes would be idle or under the limit where the overhead associated with splitting the problem may require more work and communication time than is useful.