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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 721 records · Page 40
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Potential up-scaling of inkjet-printed devices for logical circuits in flexible electronics

Inkjet Technology is often mis-believed to be a deposition/patterning technology which is not meant for high fabrication throughput in the field of printed and flexible electronics. In this work, we report on the 1) printing, 2) fabrication yield and 3) characterization of exemplary simple devices e.g. capacitors, organic transistors etc. which are the basic building blocks for logical circuits. For this purpose, printing is performed first with a Proof of concept Inkjet printing system Dimatix Material Printer 2831 (DMP 2831) using 10 pL small print-heads and then with Dimatix Material Printer 3000 (DMP 3000) using 35 pL industrial print-heads (from Fujifilm Dimatix). Printing at DMP 3000 using industrial print-heads (in Sheet-to-sheet) paves the path towards industrialization which can be defined by printing in Roll-to-Roll format using industrial print-heads. This pavement can be termed as 'Bridging Platform'. This transfer to 'Bridging Platform' from 10 pL small print-heads to 35 pL industrial print-heads help the inkjet-printed devices to evolve on the basis of functionality and also in form of up-scaled quantities. The high printed quantities and yield of inkjet-printed devices justify the deposition reliability and potential to print circuits. This reliability is very much desired when it comes to printing of circuits e.g. inverters, ring oscillator and any other planned complex logical circuits which require devices e.g. organic transistors which needs to get connected in different staged levels. Also, the up-scaled inkjet-printed devices are characterized and they reflect a domain under which they can work to their optimal status. This status is much wanted for predicting the real device functionality and integration of them into a planned circuit.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Quantum dot-based microfluidic biosensor for cancer detection

We report results of the studies relating to fabrication of an impedimetric microfluidic–based nucleic acid sensor for quantification of DNA sequences specific to chronic myelogenous leukemia (CML). The sensor chip is prepared by patterning an indium–tin–oxide (ITO) coated glass substrate via wet chemical etching method followed by sealing with polydimethylsiloxane (PDMS) microchannel for fluid control. The fabricated microfluidic chip comprising of a patterned ITO substrate is modified by depositing cadmium selenide quantum dots (QCdSe) via Langmuir–Blodgett technique. Further, the QCdSe surface has been functionalized with specific DNA probe for CML detection. The probe DNA functionalized QCdSe integrated miniaturized system has been used to monitor target complementary DNA concentration by measuring the interfacial charge transfer resistance via hybridization. The presence of complementary DNA in buffer solution significantly results in decreased electro-conductivity of the interface due to presence of a charge barrier for transport of the redox probe ions. The microfluidic DNA biosensor exhibits improved linearity in the concentration range of 10{sup −15} M to 10{sup −11} M.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2015

Oxide 2D electron gases as a route for high carrier densities on (001) Si

Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and potential applications. Growing such heterostructures on conventional semiconductors has the potential to integrate their functionality with semiconductor device technology. We demonstrate 2DEGs on a conventional semiconductor by growing GdTiO{sub 3}-SrTiO{sub 3} on silicon. Structural analysis confirms the epitaxial growth of heterostructures with abrupt interfaces and a high degree of crystallinity. Transport measurements show the conduction to be an interface effect, ∼9 × 10{sup 13} cm{sup −2} electrons per interface. Good agreement is demonstrated between the electronic behavior of structures grown on Si and on an oxide substrate, validating the robustness of this approach to bridge between lab-scale samples to a scalable, technologically relevant materials system.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Smart photovoltaics based on dye-sensitized solar cells using photochromic spiropyran derivatives as photosensitizers

In this paper, smart photovoltaic (SPV) devices, integrating both functions of solar cells and smart windows, was fabricated based on dye-sensitized solar cells using photochromic spiropyran derivatives SIBT as photosensitizers. SPV devices have self-regulated power conversion efficiency (PCE) and light transmission responding to the incident spectra due to the photoisomerization of SIBT. SIBT isomerize from closed-ring form to open-ring form under UV illumination, accompanied with enhanced visible light absorption and electron delocalization. Therefore, increased PCE and absorption in SPV devices were observed under UV treatment and the devices can be restored gradually to the initial status when kept in dark. The SPV devices have self-regulation of PCE and sunlight transmission responding to the changing sun spectra in different times of a day, providing a proper energy usage and a better sun-shading.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Structural properties of a bone-ceramic composite as a promising material in spinal surgery

The paper describes the results of in vitro tests of composite bone-ceramic implants and procedures for modifying implant surfaces to enhance osteogenesis. Analysis of CBCI ESs demonstrated that they have a porous structure with the mean longitudinal pore size of 70 µm and the mean transverse pore size of 46 µm; surface pores are open, while inner pores are closed. Elemental analysis of the CBCI surface demonstrates that CBCIs are composed of aluminum and zirconium oxides and contain HA inclusions. Profilometry of the CBCI ES surface revealed the following deviations: the maximum deviation of the profile in the sample center is 15 µm and 16 µm on the periphery, while the arithmetical mean and mean square deviations of the profile are 2.65 and 3.4 µm, respectively. In addition, CBCI biodegradation products were pre-examined; a 0.9% NaCl solution was used as a comparison group. Potentially toxic and tissue accumulated elements, such as cadmium, cobalt, mercury, and lead, are present only in trace amounts and have no statistically significant differences with the comparison group, which precludes their potential toxic effects on the macroorganism. Ceramic-based CBCI may be effective and useful in medicine for restoration of the anatomic integrity and functions of the bone tissue.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Directional multimode coupler for planar magnonics: Side-coupled magnetic stripes

We experimentally demonstrate spin waves coupling in two laterally adjacent magnetic stripes. By the means of Brillouin light scattering spectroscopy, we show that the coupling efficiency depends both on the magnonic waveguides' geometry and the characteristics of spin-wave modes. In particular, the lateral confinement of coupled yttrium-iron-garnet stripes enables the possibility of control over the spin-wave propagation characteristics. Numerical simulations (in time domain and frequency domain) reveal the nature of intermodal coupling between two magnonic stripes. The proposed topology of multimode magnonic coupler can be utilized as a building block for fabrication of integrated parallel functional and logic devices such as the frequency selective directional coupler or tunable splitter, enabling a number of potential applications for planar magnonics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Strontium ruthenate–anatase titanium dioxide heterojunctions from first-principles: Electronic structure, spin, and interface dipoles

The epitaxial integration of functional oxides with wide band gap semiconductors offers the possibility of new material systems for electronics and energy conversion applications. We use first principles to consider an epitaxial interface between the correlated metal oxide SrRuO{sub 3} and the wide band gap semiconductor TiO{sub 2}, and assess energy level alignment, interfacial chemistry, and interfacial dipole formation. Due to the ferromagnetic, half-metallic character of SrRuO{sub 3}, according to which only one spin is present at the Fermi level, we demonstrate the existence of a spin dependent band alignment across the interface. For two different terminations of SrRuO{sub 3}, the interface is found to be rectifying with a Schottky barrier of ≈1.3–1.6 eV, in good agreement with experiment. In the minority spin, SrRuO{sub 3} exhibits a Schottky barrier alignment with TiO{sub 2} and our calculated Schottky barrier height is in excellent agreement with previous experimental measurements. For majority spin carriers, we find that SrRuO{sub 3} recovers its exchange splitting gap and bulk-like properties within a few monolayers of the interface. These results demonstrate a possible approach to achieve spin-dependent transport across a heteroepitaxial interface between a functional oxide material and a conventional wide band gap semiconductor.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Upper wide-angle viewing system for ITER

The Upper Wide Angle Viewing System (UWAVS) will be installed on five upper ports of ITER. Here, this paper shows major requirements, gives an overview of the preliminary design with reasons for some design choices, examines self-emitted IR light from UWAVS optics and its effect on accuracy, and shows calculations of signal-to-noise ratios for the two-color temperature output as a function of integration time and divertor temperature. Accurate temperature output requires correction for vacuum window absorption vs. wavelength and for self-emitted IR, which requires good measurement of the temperature of the optical components. The anticipated signal-to-noise ratio using presently available IR cameras is adequate for the required 500 Hz frame rate.

47 OTHER INSTRUMENTATION↗
DOE OSTI2017

Enhancement of Raman scattering from molecules placed near metal nanoparticles

Large Raman scattering cross sections from molecules on surfaces of metallic nanoparticles are described within a renormalization-group theory. In this approach the valence electrons of the molecules are embedded in an effective medium described by a dielectric function, which integrates out the effect of the plasmonic excitations of the metallic nanoparticles. The source of the enhanced photon inelastic scattering is produced by the resonant excitation of surface plasmons at the metallic nanoparticles. Here, a similar theory has been successfully used to explain the resonant x-ray inelastic scattering and the behavior of nonlinear susceptibilities at the x-ray edges

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2020

Tunneling electroresistance effects in epitaxial complex oxides on silicon

Complex oxide-based ferroelectric tunnel junctions (FTJs) show excellent nonvolatile memory characteristics promising for emerging technology. However, integration of these epitaxially grown FTJs electrically with a silicon substrate remains challenging due to their incompatible lattice structures and poor electronic interfaces resulting from the direct synthesis techniques. Here, we present an epitaxial SrRuO 3 /PbZr 0.2 Ti 0.8 O 3 /SrRuO 3 FTJ integrated electrically with a doped silicon substrate after a layer transfer process. The tunnel currents of the FTJ on silicon show a large tunneling electroresistance (~1×10 5 %) effect, which is explained by a numerical FTJ model incorporating pinned dipoles at the interfaces. This proof of concept of the integration of functional oxide heterostructures with silicon opens a pathway to beyond-CMOS computing devices using unconventional materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

On the Cauchy problem for Boltzmann equation modeling a polyatomic gas

In the present article, we consider the Boltzmann equation that models a polyatomic gas by introducing one additional continuous variable, referred to as microscopic internal energy. We establish existence and uniqueness theory in the space homogeneous setting for the full non-linear case, under an extended Grad-type assumption on transition probability rates, which comprises hard potentials for both the relative speed and internal energy with the rate in the interval 0,2, multiplied by an integrable angular part and integrable partition functions. The Cauchy problem is resolved by means of an abstract ordinary differential equation (ODE) theory in Banach spaces for the initial data with finite and strictly positive gas mass and energy, finite momentum, and additionally finite K* polynomial moment, with K* depending on the rate of the transition probability and the structure of a polyatomic molecule or its internal degrees of freedom. Moreover, we prove that polynomially and exponentially weighted Banach space norms associated with the solution are both generated and propagated uniformly in time.

Physics↗
DOE OSTI2022

Novel superposed kinklike and pulselike solutions for several nonlocal nonlinear equations

In this work, we show that a number of nonlocal nonlinear equations, including the Ablowitz–Musslimani and Yang variant of the nonlocal nonlinear Schrödinger (NLS) equation, the nonlocal modified Korteweg de Vries (mKdV) equation, and the nonlocal Hirota equation, admit novel kinklike and pulselike superposed periodic solutions. Furthermore, we show that the nonlocal mKdV equation also admits the superposed (hyperbolic) kink–antikink solution. In addition, we show that while the nonlocal Ablowitz–Musslimani variant of the NLS admits complex parity-time reversal-invariant kink and pulse solutions, neither the local NLS nor the Yang variant of the nonlocal NLS admits such solutions. Finally, except for the Yang variant of the nonlocal NLS, we show that the other three nonlocal equations admit both the kink and pulse solutions in the same model.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

Vacuum deposition of χ(2) nonlinear organic single crystal films on silicon

Integrating second order nonlinear (χ(2)) optical materials on chip is an ongoing challenge for Si photonics. Noncentrosymmetric molecular crystals have the potential to deliver high χ(2) nonlinearity with good thermal stability, but so far have been limited to growth from solution or the melt, which are both difficult to control and scale up in manufacturing. Here, we show that large (>100 μm) single crystal domains of the nonlinear molecule 2-[3-(4-hydroxystyryl)-5,5-dimethylcyclohex-2-enylidene] malononitrile (OH1) can be grown monolithically on either glass or Si via vacuum evaporation, followed by a short thermal annealing step. The crystallites are tens of nanometer thick and exhibit strong second harmonic generation with their primary χ(2) tensor component lying predominantly in plane. Remarkably, we find that a single domain can grow uninterrupted through nearby channels etched on a Si wafer, which may provide a path to integrate OH1 on Si or Si3N4 waveguides for a broad range of χ(2)-based photonic integrated circuit functionality.

Physics↗
DOE OSTI2024

Gallium oxide (Ga 2 O 3 ) energy dependent scintillation response to fast neutrons and flash gamma-rays

Gallium oxide is a newly emerged ultrawide bandgap (4.9 eV) semiconductor that is suitable as a combined electronics and radiation detection platform. We have experimentally demonstrated fast neutron and gamma-ray scintillation from Czochralski-grown β-Ga 2 O 3 in a recent series (October 2023) of experiments at the unmoderated pulsed neutron spallation source located at the Los Alamos Neutron Science Center. Using the neutron time-of-flight (TOF) technique and a fast-gated intensified CCD camera, we observed energy-dependent neutron scintillation for neutron energies ranging from 1 to 400 MeV, including the 14.1 MeV neutron energy relevant to D–T fusion. Neutron flux is quantified and calibrated by cascading the scintillator after the fission chamber, enabling a detailed analysis of temporal and energy-dependent characteristics of the scintillation events. Further, a pronounced scintillation signal from the spallation gamma flash with a temporal full width of half maximum of ~4 ns is indicative of the material’s rapid response. Neutron energy dependent scintillation is observed using the TOF method at a 22.6-m distance from the neutron source. These results highlight the possibility of developing a Ga 2 O 3 based fusion neutron diagnostic platform integrated with both scintillation and electronics functions on the integrated chip scale.

47 OTHER INSTRUMENTATION↗
DOE OSTI2018

Yeast require redox switching in DNA primase

Eukaryotic DNA primases contain a [4Fe4S] cluster in the C-terminal domain of the p58 subunit (p58C) that affects substrate affinity but is not required for catalysis. We show that, in yeast primase, the cluster serves as a DNA-mediated redox switch governing DNA binding, just as in human primase. Despite a different structural arrangement of tyrosines to facilitate electron transfer between the DNA substrate and [4Fe4S] cluster, in yeast, mutation of tyrosines Y395 and Y397 alters the same electron transfer chemistry and redox switch. Mutation of conserved tyrosine 395 diminishes the extent of p58C participation in normal redox-switching reactions, whereas mutation of conserved tyrosine 397 causes oxidative cluster degradation to the [3Fe4S] + species during p58C redox signaling. Switching between oxidized and reduced states in the presence of the Y397 mutations thus puts primase [4Fe4S] cluster integrity and function at risk. Consistent with these observations, we find that yeast tolerate mutations to Y395 in p58C, but the single-residue mutation Y397L in p58C is lethal. Our data thus show that a constellation of tyrosines for protein-DNA electron transfer mediates the redox switch in eukaryotic primases and is required for primase function in vivo.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2024

Dramatic changes in mitochondrial subcellular location and morphology accompany activation of the CO 2 concentrating mechanism

Dynamic changes in intracellular ultrastructure can be critical for the ability of organisms to acclimate to environmental conditions. Microalgae, which are responsible for ~50% of global photosynthesis, compartmentalize their Ribulose 1,5 Bisphosphate Carboxylase/Oxygenase (Rubisco) into a specialized structure known as the pyrenoid when the cells experience limiting CO 2 conditions; this compartmentalization is a component of the CO 2 Concentrating Mechanism (CCM), which facilitates photosynthetic CO 2 fixation as environmental levels of inorganic carbon (Ci) decline. Changes in the spatial distribution of mitochondria in green algae have also been observed under CO 2 limitation, although a role for this reorganization in CCM function remains unclear. We used the green microalga Chlamydomonas reinhardtii to monitor changes in mitochondrial position and ultrastructure as cells transition between high CO 2 and Low/Very Low CO 2 (LC/VLC). Upon transferring cells to VLC, the mitochondria move from a central to a peripheral cell location and orient in parallel tubular arrays that extend along the cell’s apico-basal axis. We show that these ultrastructural changes correlate with CCM induction and are regulated by the CCM master regulator CIA5. The apico-basal orientation of the mitochondrial membranes, but not the movement of the mitochondrion to the cell periphery, is dependent on microtubules and the MIRO1 protein, with the latter involved in membrane–microtubule interactions. Furthermore, blocking mitochondrial respiration in VLC-acclimated cells reduces the affinity of the cells for Ci. Overall, our results suggest that mitochondrial repositioning functions in integrating cellular architecture and energetics with CCM activities and invite further exploration of how intracellular architecture can impact fitness under dynamic environmental conditions.

CO2 concentrating mechanism↗