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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 721 records · Page 40
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

A simulation for gravity fine structure recovery from low-low GRAVSAT SST data

Covariance error analysis techniques were applied to investigate estimation strategies for the low-low SST mission for accurate local recovery of gravitational fine structure, considering the aliasing effects of unsolved for parameters. A 5 degree by 5 degree surface density block representation of the high order geopotential was utilized with the drag-free low-low GRAVSAT configuration in a circular polar orbit at 250 km altitude. Recovery of local sets of density blocks from long data arcs was found not to be feasible due to strong aliasing effects. The error analysis for the recovery of local sets of density blocks using independent short data arcs demonstrated that the estimation strategy of simultaneously estimating a local set of blocks covered by data and two "buffer layers" of blocks not covered by data greatly reduced aliasing errors.

Estes, R. H.↗
NASA NTRS1979

Thermal analysis of turbulent flow of a supercritical fluid

The influence of the large variation of thermodynamics and transport properties near the pseudocritical temperature on the heat transfer coefficient of supercritical fluid in turbulent flow was studied. The formation of the characteristics peak in the heat transfer coefficient vs. bulk temperature curve is described, and the necessity of the fluid element at pseudocritical temperature located in the buffer layer is discussed.

Yamane, E.↗
NASA NTRS1979

Internal stress and degradation in short-wavelength AlGaAs double-heterojunction devices

Aging tests of incoherently operated zinc-doped double-heterojunction (DH) lasers designed for short-wavelength (0.71-0.72 micron) operation show that the introduction of buffer layers between the substrate and the DH structure leads to a drastic reduction in gradual degradation. This is attributed to a decrease in lattice mismatch stress.

Ladany, I.↗
NASA NTRS1985

Making Cubic Silicon Carbide Semiconductors

Thin buffer layer of SiC minimizes effects of lattice mismatch. Approach consists of growing single-crystal layer of cubic SiC on single-crystal silicon (Si) wafer by chemical-vapor deposition (CVD). Process developed for production of large-area single-crystal wafers of cubic silicon carbide (SiC) for semiconductor devices; also used to make devices themselves. Applications include electronics for high temperature (up to 900 C) and electronics for very high frequencies.

Powell, J.↗
NASA NTRS1983

Communications and logic systems at millimeter wave frequencies, summary

During the contract period an AsCl3 epitaxial system used to provide buffer layers for FET structures was constructed. A submicron lithographic processes using deep U.V. techniques was developed and, employing these techniques, a working .5 micron gate device was produced. In addition, the development of submicron mixer diodes continued. The gettering of substrates of a technique to improve the mobility of ionimplantated layers was investigated. The result of this experiment showed a correlation between improved hall mobilities and gettered substrates. Finally, several theoretical studies are reported.

Source record↗
NASA NTRS1987

Helicity fluctuations in incompressible turbulent flows

Results from direct numerical simulations of several homogeneous flows and fully developed turbulent channel flow indicate that the probability distribution function (pdf) of relative helicity density exhibits at most a 20 percent deviation from a flat distribution. Isotropic flows exhibit a slight helical nature but the presence of mean strain in homogeneous turbulence suppresses helical behavior. All the homogeneous turbulent flows studied show no correlation between relative helicity density and the dissipation of turbulent kinetic energy. The channel flow simulations indicate that, except for low-dissipation regions near the outer edge of the buffer layer, there is no tendency for the flow to be helical. The strong peaks in the relative helicity density pdf and the association of these peaks with regions of low dissipation found in previous simulations by Pelz et al.(1985) are not observed.

Rogers, Michael M.↗
NASA NTRS1987

Stochastic estimation of organized structures in turbulent channel flow

Linear stochastic estimation is used to approximate the conditional vector fields associated with high Reynolds stress producing events in numerically simulated turbulent channel flow. Joint probability density distributions of u-v are presented for y(+) between 1.35 and 180, and at each position the u-v values that make the greatest contributions to the average uv3 are used to define conditional ejection- and sweep-type events. In the y-z plane the conditional fields appear to be pairs of counter-rotating vortices. When the conditional event defined by the weighted probability density function is specified at a point close to the wall, the spacing and size of these eddies are consistent with the accepted wall streak spacing. As this point moves outwards, the eddy size increases significantly. An abrupt change in the flow angle occurs in the buffer layer and may indicate transition from streamwise oriented wall layer structures to hairpin vortices characterizing the outer layer.

Moin, P.↗
NASA NTRS1990

Perspectives on high temperature superconducting electronics

The major challenges in making high temperature superconducting (HTSC) electronics viable are predominantly materials problems. Unlike their predecessors the metal oxide-based superconductors are integratable with other advanced technologies such as opto-electronics and micro-electronics. The materials problems to be addressed relate to the epitaxial growth of high quality films, highly oriented films on non-lattice matched substrates, heterostructures with atomically sharp interfaces of junctions and other novel devices, and the processing of these films with negligible deterioration of the superconducting properties. These issues are illustrated with results based on films prepared in-situ by a pulsed laser deposition process. Films with zero-transition temperatures of 90 K and critical current densities of 5 x 10(exp 6) A/sq cm at 77 K have been prepared by this technique. Ultra-thin films, less than 100 A show T(sub c) is greater than 80 K, supporting the idea of two-dimensional transport in these materials. By the use of appropriate buffer layers, films with T(sub c) of 87 K and J(sub c) of 6 x 10(exp 4) A/sq cm were fabricated on silicon substrates. Submicron structures with J(sub c) is greater than 2 x 10(exp 7) at 10 K were fabricated. Results on nonlinear switching elements, IR detectors, and microwave studies will be briefly summarized.

Venkatesan, T.↗
NASA NTRS1990

The effects of space radiation on thin films of YBa2Cu3O(sub 7-x)

This investigation had two objectives: (1) to determine the effects of space radiation on superconductor parameters that are most important in space applications; and (2) to determine whether this effect can be simulated with Co-60 gamma rays, the standard test method for space materials. Thin films of yttrium barium copper oxide (YBCO) were formed by coevaporation of Y, BaF2, and Cu and post-annealing in wet oxygen at 850 C for 3.5 h. The substrate used was (100) silicon with an evaporated zirconia buffer layer. The samples were characterized by four point probe electrical measurements as a function of temperature. The parameters measured were the zero resistance transition temperature (T sub c) and the room temperature resistance. The samples were then exposed to Co-60 gamma-rays in air and in pure nitrogen, and to 780 keV electrons, in air. The parameters were then remeasured. The results are summarized. The results indicate little or no degradation in the parameters measured for samples exposed up to 10 Mrads of gamma-rays in nitrogen. However, complete degradation of samples exposed to 10-Mrad in air was observed. This degradation is preliminarily attributed to the high level of ozone generated in the chamber by the gamma-ray interaction with air. It can be concluded that: (1) the electron component of space radiation does not degrade the critical temperature of the YBCO films described, at least for energies around 800 keV and doses similar to those received by surface materials on spacecraft in typical remote sensing missions; and (2) for qualifying this and other superconducting materials against the space-radiation threat the standard test method in the aerospace industry, namely, exposure to Co-60 gamma-rays in air, may require some further investigation. As a minimum, the sample must be either in vacuum or in positive nitrogen pressure.

Herschitz, R.↗
NASA NTRS1988

Photon degradation of AlGaAs/GaAs solar cells

The behavior of GaAs solar cells after photon illumination for a prolonged exposure time is presented. More than 55 OMCVD AlGaAs/GaAs solar cells were exposed for over 400 h to AM0 photons at 28 C in three separate, well-controlled runs. Significant degradation of solar cell efficiency was observed in two out of three runs. Although noticeable losses in the open-circuit voltage, fill factor, and maximum power were observed, no change in the short-circuit current was found. In one of the runs, no change was seen in either the test cells or the control cells. Each cell in this run was protected with a coverglass. The cells in this run had thicker buffer layers and thinner window layers than the cells in the other two runs.

Anspaugh, Bruce↗
NASA NTRS1989

Ballistic-electron-emission microscopy of subsurface defects at the Au-GaAs(100) interface

The application of ballistic-electron-emission microscopy (BEEM) to a study of the influence of GaAs(100) substrate conditions on the formation of a multidefect structure at the Au-GaAs(100) Schottky barrier interface is described. Interfaces prepared on both melt-grown GaAs(100) wafer substrates and MBF-deposited GaAs(100) buffer layers are considered. As a comparison to the study of Au-GaAs(100) interfaces, BEEM imaging is performed on Au-Si(100) interfaces. It is noted that Au-GaAs(100) interface formation is relatively insensitive to the effects of substrate surface condition and substrate bulk defect density, and that the combination of BEEM imaging and BEEM spectroscopy indicates that the heterogeneous interface defects are the result of diffusion between the Schottky barrier electrodes.

Hecht, M. H.↗
NASA NTRS1990

InAs/Ga(1-x)In(x)Sb superlattices for infrared detector applications

The successful growth of InAs/Ga(1-x)In(x)Sb superlattices and their optical and structural characterization is discussed. Samples were grown by molecular beam epitaxy at fairly low substrate temperatures (less than 400 C). Structural quality was assessed by reflection high energy electron difrraction, transmission electron microscopy, and x ray diffraction. Excellent structures were achieved for growth on thick, strain relaxed GaSb buffer layers on GaAs substrates, despite a residual threading dislocation density of 10(exp 9)cm(exp -2) originating at the GaSb/GaAs interface. Despite a lattice mismatch of 1.7 percent, InAs/Ga(0.75)In(0.25)Sb superlattices are observed to be free of misfit dislocations at the thicknesses examined here, owing to the close lattice match between the superlattice and GaSb, which evenly distributes compressive and tensile stresses between the InAs and Ga(0.75)In(0.25)Sb layers. Photoluminescence and photoconductivity measurements indicate that the energy gaps of the strain-layer superlattices are smaller than those of InAs/GaSb superlattices with the same layer thicknesses, and are in agreement with the theoretical predictions of Smith and Mailhiot. Energy gaps of 80 to 250 meV (15 to 5 microns) have been measured for InAs/Ga(0.75)In(0.25)Sb superlattices with 45 to 25 A/25 A layer thickness. Results demonstrate that far-infrared cutoff wavelengths are compatible with the thin superlattice layers required for strong optical absorption in type-II superlattices.

Miles, Richard H.↗
NASA NTRS1991

Submicron area NbN/MgO/NbN tunnel junctions for SIS mixer applications

The development of submicron area mixer elements for operation in the submillimeter wave range is discussed. High-current-density NbN/MgO/NbN tunnel junctions with areas down to 0.1 sq microns have been fabricated in both planar and edge geometries. The planar junctions were fabricated from in situ deposited trilayers using electron-beam lithography to pattern submicron area mesas. Modifications of fabrication techniques used in larger-area NbN tunnel junctions are required and are discussed. The NbN/MgO/NbN edge junction process using sapphire substrates has been transferred to technologically important quartz substrates using MgO buffer layers to minimize substrate interactions. The two junction geometries are compared and contrasted in the context of submillimeter wave mixer applications.

Leduc, H. G.↗
NASA NTRS1991

Perspectives on high temperature superconducting electronics

The major challenges in making high temperature superconducting (HTSC) electronics viable are predominantly materials problems. Unlike their predecessors, the metal oxide-based superconductors are integratable with other advanced technologies such as opto-electronics and micro-electronics. The materials problems to be addressed relate to the epitaxial growth of high quality films, highly oriented films on non-lattice matched substrates, heterostructures with atomically sharp interfaces of junctions and other novel devices, and the processing of these films with negligible deterioration of the superconducting properties. These issues are illustrated with results based on films prepared in-situ by a pulsed laser deposition process. Films with zero-transition temperatures of 90 K and critical current densities of 5 x 10(exp 6) A/sq cm at 77 K have been prepared by this technique. Ultra-thin films, less than 100 A show T(sub c) is greater than 80 K, supporting the idea of two-dimensional transport in these materials. By the use of appropriate buffer layers, films with T(sub c) of 87 K and J(sub c) of 6 x 10(exp 4) A/sq cm were fabricated on silicon substrates. Submicron structures with J(sub c) is greater than 2 x 10(exp 7) at 10 K were fabricated. Results on nonlinear switching elements, IR detectors, and microwave studies will be briefly summarized.

Venkatesan, T.↗
NASA NTRS1991

The effects of space radiation on thin films of YBa2Cu3O(7-x)

This investigation had two objectives: (1) to determine the effects of space radiation on superconductor parameters that are most important in space applications; and (2) to determine whether this effect can be simulated with Co-60 gamma rays, the standard test method for space materials. Thin films of yttrium barium copper oxide (YBCO) were formed by coevaporation of Y, BaF2, and Cu and post-annealing in wet oxygen at 850 C for 3.5 h. The substrate used was (100) silicon with an evaporated zirconia buffer layer. The samples were characterized by four point probe electrical measurements as a function of temperature. The parameters measured were the zero resistance transition temperature T(sub c) and the room temperature resistance. The samples were then exposed to Co-60 gamma-rays in air and in pure nitrogen, and to 780 keV electrons, in air. The parameters were then remeasured. The results are summarized. The results indicate little or no degradation in the parameters measured for samples exposed up to 10 Mrads of gamma-rays in nitrogen. However, complete degradation is preliminarily attributed to the high level of ozone generated in the chamber by the gamma-ray interaction with air. It can be concluded that: (1) the electron component of space radiation does not degrade the critical temperature of the YBCO films described, at least for energies around 800 keV and doses similar to those received by surface materials on spacecraft in typical remote sensing missions; and (2) for qualifying this and other superconducting materials against the space-radiation threat the standard test method used in the aerospace industry, namely, exposure to Co-60 gamma-rays in air, may require some further investigation. As a minimum, the sample must be either in vacuum or in positive nitrogen pressure.

Herschitz, R.↗
NASA NTRS1991

The effect of temperature cycling typical of low earth orbit satellites on thin films of YBa2Cu3O(7-x)

Thin films of YBa2Cu3O(7-x) (YBCO) were temperature cycled to simulate conditions of a low earth orbit satellite. In one series of tests, epitaxial and polycrystalline YBCO films were cycled between temperatures of +/- 80 C in vacuum and in nitrogen for hundreds of cycles. The room temperature resistance of an epitaxial YBCO film increased by about 10 percent, but the superconducting transition temperature was unchanged. The largest changes were for a polycrystalline YBCO film on oxidized silicon with a zirconia buffer layer, for which the transition temperature decreased by 3 K. An extended test was carried out for epitaxial films. After 3200 cycles (corresponding to about 230 days in space), transition temperatures and critical current densities remained unchanged.

Mogro-Campero, A.↗
NASA NTRS1992

Superconductivity devices: Commercial use of space

High T sub C superconducting thick film were prepared by a screen printing process. Y-based (YBa2Cu3O(7-x) superconducting thick film were printed on 211/Al2O3, SNT/Al2O3, and YSZ substrates. Because of poor adhesion of the superconductor thick films to 211/Al2O3 and SNT/Al2O3 substrates, relatively low T sub C and J sub C values were obtained from the films printed on these substrates. Critical temperatures (T sub C) of YBa2Cu3O(7-x) thick films deposited on 211/Al2O3 and SNT/Al2O3 substrates were about 80 K. The critical current densities (J sub C) of these films were less than 2 A/sq cm. Higher T sub C and J sub C YBa2Cu3O(7-x) thick films were printed on YSZ substrates. A YBa2Cu3O(7-x) thick film with T sub C=86.4 and J sub C= 50.4 A/sq cm was prepared by printing the film on YSZ substrate and firing at 990 C for 10 minutes. Multiple-lead samples were also prepared on the YSZ substrates. The multiple-lead samples showed lower T sub C and/or J sub C values than those of the plain samples. The electrical properties of YBa2Cu3O(7-x) thick films were determined by the microstructures of the films. The YBa2Cu3O(7-x) thick films printed on the YSZ substrates, which had the best properties among the films printed on the three different kinds of substrates, had the highest density and the best particle interconnection. The YBa2Cu3O(7-x) thick films with preferred orientation in (001) direction were obtained on the YSZ substrates. Cracks, which retard the properties of the films, were found from the films deposited on the YSZ substrates. Currently, a MSZ (Magnesium Stabilized Zirconia) substrate, which had higher thermal expansion coefficient than the YSZ substrate, is used as substrate for the YBa2Cu3O(7-x) thick film in order to eliminate the cracks on the film. Bi-based superconductor thick films were printed on polycrystalline MgO and YSZ substrates. Interactions between BSCCO thick films and the YSZ substrates were observed. Various buffer layer materials were applied onto the substrates in order to avoid the interactions between the BSCCO thick films and the ZrO2-based substrates. So far, a BSCCO printed on MgO substrate with T Sub C=89K was obtained. The J sub C of the film was lower than 0.1 A/sq cm by reason of poor interconnectivity of the BSCCO particles.

Haertling, Gene↗
NASA NTRS1991

Crystal growth of YBa2Cu3O(7-x) and reaction of gold crucible with Ba-Cu-rich flux

YBa2Cu3O(7-x) crystals are grown in a gold crucible by a self-flux method. The flux moves along the gold surface due to surface wetting and leaves Y123 crystals behind. The obtained crystals are clean and have a size up to two millimeters and a Tc is greater than 90 K. In an effort to recycle the used crucibles, it is found that the used gold is contaminated by copper. A CuO thin film is easily formed on the surface of the crucible that is made of the used gold. This film provides good surface wetting and a buffer layer, which reduces the reaction between gold and the Y-Ba-Cu-oxide melt.

Tao, Y. K.↗