Characterization of the Photon Counting CHASE Jr., Chip Built in a 40-nm CMOS Process With a Charge Sharing Correction Algorithm Using a Collimated X-Ray Beam
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The effects of visible laser light on cadmium telluride (CdTe), grown by molecular beam epitaxy, are studied at low (48 μ W/ μ m 2 ) and high (480 μ W/ μ m 2 ) laser power densities using micro-Raman spectroscopy. The Raman spectrum of CdTe shows no notable change at low power density ~48 μ W/ μ m 2 for prolonged laser exposure. At higher power density ~480 μ W/ μ m 2 , the Raman spectrum is significantly changed and strong Te-related peaks appear in the spectrum, even for short laser exposure times suggesting that photo-induced Te enrichment happens at the CdTe surface at high laser power density. The temperature rise is estimated from observed shifts in the Te and CdTe optical phonon peaks and modeled using finite-element simulations. At laser power 480 μ W/ μ m 2 , the CdTe exhibits a rise of ~44 °C above room temperature while the observed change in Te temperature is significantly higher, ~179 °C. Furthermore, the approach illustrates steps needed to establish the laser damage threshold for CdTe.
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This dataset contains DFT input and output files supporting the theoretical modeling in the associated publication (ACS Appl. Mater. Interfaces 2026, 18, 15654-15664). The calculations model the interfacial energetics of two MnTe polymorphs — NiAs-MnTe (hexagonal, alpha phase) and ZnS-MnTe (cubic, gamma phase) — on InP(111) substrates with two surface terminations: In-terminated InP(111)A and P-terminated InP(111)B. This gives four interface configurations: NiAs on In-terminated (experimentally observed), NiAs on P-terminated (computed for comparison), ZnS on In-terminated (computed for comparison), and ZnS on P-terminated (experimentally observed). The dataset is organized into four calculation types, each covering all four polymorph/termination combinations: (i) Slabs: Pristine MnTe/InP heterostructure slabs used to compute total energies and interface energy densities (Eint) for all four configurations, as reported in Fig. 6 of the main text. (ii) Disorder: Same slab geometries with a P_Te + Te_P antisite defect pair introduced near the interface, used to assess chemical intermixing effects on interface stability (Fig. S8, SI). (iii) Strain: Pristine slab calculations with in-plane lattice parameters strained by -1% and +1% relative to the InP lattice constant, used to evaluate strain-dependent interface energetics (Fig. S9, SI). (iv) Charge_Density: Single-point calculations on the full heterostructure, the isolated InP slab, and the isolated MnTe slab at fixed geometry, used to compute differential charge density plots showing interfacial charge accumulation and depletion as a function of surface termination (Fig. S10, SI). Each calculation folder contains INCAR, KPOINTS, POSCAR, CONTCAR, OUTCAR, and POTCAR_info.txt (PAW potential information, excluding the full POTCAR due to VASP licensing restrictions). The calculations were performed using VASP 6.4.3 with PBE exchange-correlation, PAW potentials, a Hubbard correction of Ueff = 5 eV on Mn d-states, and A-type AFM spin initialization.
In this work we detail experiments performed on a gear-changing system using the Double ElectroStatic Ion Ring ExpEriment (DESIREE). A gear-changing system is one where there are different harmonic numbers in each ring. This experiment used carbon and nitrogen beams in a 4 on 3 gear-changing arrangement, with the last bunch of each left off. The bunch length can be measured and synchrotron motion detected. We performed this measurement on three different values of carbon current, and present the differences in the bunch length frequency spectrum here, which correspond to twice the synchrotron frequencies.
Precise and predictable propagation and deposition of laser energy in high energy density (HED) plasma is threatened by the breakup of the beam into filaments. Such filaments can be deflected and sprayed but also locally intensify the light, increasing the likelihood of other problematic interactions with the plasma. Adequately modeling, anticipating, and avoiding such processes in HED experiments requires a thorough understanding of the thresholds and nonlinear saturation mechanisms, particularly for the weakly collisional, high temperature plasmas achieved at the National Ignition Facility (NIF).
Precise and predictable propagation and deposition of laser energy in high energy density (HED) plasma is threatened by the breakup of the beam into filaments. Such filaments can be deflected and sprayed but also locally intensify the light, increasing the likelihood of other problematic interactions with the plasma. Adequately modeling, anticipating, and avoiding such processes in HED experiments requires a thorough understanding of the thresholds and nonlinear saturation mechanisms, particularly for the weakly collisional, high temperature plasmas achieved at the National Ignition Facility (NIF).
Together with Realta Fusion we developed advanced simulations using WarpX for magnetic confinement fusion devices and advanced neutral beam systems for plasma heating.
In this note, additional critical comments on the recent publication by F. Rathmann et al., Phys. Rev. Accel. Beams 29, 021001 (2026), are presented.
Boron-containing materials are increasingly drawing interest for the use in electronics, optics, laser targets, neutron absorbers, and high-temperature and chemically resistant ceramics. In this article, the first investigation into the deposition of boron-based material via electron beam-induced deposition (EBID) is reported. Thin films were deposited using a novel, large-area EBID system that is shown to deposit material at rates comparable to conventional techniques such as laser-induced chemical vapor deposition. The deposition rate and stoichiometry of boron oxide fabricated by EBID using trimethyl borate (TMB) as precursor is found to be critically dependent on the substrate temperature. By comparing the deposition mechanisms of TMB to the conventional, alkoxide-based precursor tetraethyl orthosilicate it is revealed that ligand chemistry does not precisely predict the pathways leading to deposition of material via EBID. Lastly, the results demonstrate the first boron-containing material deposited by the EBID process and the potential for EBID as a scalable fabrication technique that could have a transformative effect on the athermal deposition of materials.
Particle beam power density detection and measurement apparatus
Laser beam photography by multiple reflections from partially reflecting mirrors
An algorithm is developed for producing numerical simulations of large motions of a nonuniform cantilever beam in orbit. Special emphasis is given to the effective formulation of equations of motion and to the use of the finite element method to construct modal functions. Finite element methods are used to generate modal functions in such a way as to permit a particularly harmonious relationship to be established between the disciplines of rigid body dynamics and structural analysis. Sufficient information is provided to enable a reader to create, with relatively little effort, his own simulation program; simulation results are reported, both to provide check cases for other investigators and to illustrate certain important facets of the behavior of flexible spacecraft.
An algorithm is developed for the numerical simulation of large motions of an unrestrained, nonuniform beam in orbit. Explicit provisions are made for the accommodation of general, physically significant initial conditions and for the specification of control forces in practical terms. The evaluation of certain constants that appear in the equations of motion is considered, the finite element method being used for this purpose. The importance of initial conditions in the study of spacecraft motions is stressed.
A chopped electron beam induced current (EBIC) technique for the chacterization of back-surface field (BSF) solar cells is presented. It is shown that the effective recombination velocity of the low-high junction forming the back-surface field of BSF cells, in addition to the diffusion length and the surface recombination velocity of the surface perpendicular to both the p-n and low-high junctions, can be determined from the data provided by a single EBIC scan. The method for doing so is described and illustrated. Certain experimental considerations taken to enhance the quality of the EBIC data are also discussed.
Step by step procedures are described which are used to design structural components (rods, columns, and beam columns) subjected to steady state mechanical loads and hydrothermal environments. Illustrative examples are presented for structural components designed for static tensile and compressive loads, and fatigue as well as for moisture and temperature effects. Each example is set up as a sample design illustrating the detailed steps that are used to design similar components.
The general purpose in this study was to determine the stresses in a wooden member subjected to combined beam and column action. What may be considered the specific purpose, as it relates more directly to the problem of design, was to determine the particular stress that obtains at maximum load which, for combined loading, does not occur simultaneously with maximum stress.
Both intra-beamscattering (IBS) and the Touschek effect become prominent formulti-bend-achromat- (MBA-) based ultra-low-emittance storage rings. To mitigate the transverse emittance degradation and obtain a reasonably long beam lifetime, a higher harmonic rf cavity (HHC) is often proposed to lengthen the bunch. The use of such a cavity results in a non-gaussian longitudinal distribution. However, common methods for computing IBS and Touschek scattering assume Gaussian distributions. Modifications have been made to several simulation codes that are part of the elegant [1] toolkit to allow these computations for arbitrary longitudinal distributions. After describing thesemodifications, we review the results of detailed simulations for the proposed hybrid seven-bend-achromat (H7BA) upgrade lattice [2] for the Advanced Photon Source.