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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

Laboratory study of the temporal evolution of the current-voltage characteristic of a probe in the wake of an object immersed in a pulsed flowing plasma

Measurements of the current-voltage characteristics of a Langmuir probe in the near wake of a disk immersed in a pulsed flowing plasma were made. A 1 cm diameter biasable sphere was placed in the ion-free near wake region of a 10 cm diameter disk immersed in a Mach 8 pulsed flowing plasma. The current-voltage characteristic of the sphere was observed as a function of time as the sphere bias was scanned from -5000 V to +1000 V. The collected current is found to be monotonically increasing with increasing positive bias voltage but exhibits a threshold voltage for current collection as the bias voltage becomes more negative. Potential measurements in the wake region were made for a sphere bias voltages below, at, and above the current collection threshold for a number of times during the wake formation period. The time evolution of the potential profile is shown to change as the sheath around the biased sphere is established. Predictions from the particle trajectory code SIMION are compared with data, showing excellent agreement in the prediction of the current collection threshold.

Meassick, S.↗
NASA NTRS1995

Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual-use applications can include battery chargers and remote power supplies for consumer electronics products such as portable telephones/beepers, portable radios, CD players, dashboard radar detectors, remote walkway lighting, etc.

Dinetta, L. C.↗
NASA NTRS1998

Random Dopant Induced Threshold Voltage Lowering and Fluctuations in Sub-0.1 (micron)meter MOSFET's: A 3-D 'Atomistic' Simulation Study

A three-dimensional (3-D) "atomistic" simulation study of random dopant induced threshold voltage lowering and fluctuations in sub-0.1 microns MOSFET's is presented. For the first time a systematic analysis of random dopant effects down to an individual dopant level was carried out in 3-D on a scale sufficient to provide quantitative statistical predictions. Efficient algorithms based on a single multigrid solution of the Poisson equation followed by the solution of a simplified current continuity equation are used in the simulations. The effects of various MOSFET design parameters, including the channel length and width, oxide thickness and channel doping, on the threshold voltage lowering and fluctuations are studied using typical samples of 200 atomistically different MOSFET's. The atomistic results for the threshold voltage fluctuations were compared with two analytical models based on dopant number fluctuations. Although the analytical models predict the general trends in the threshold voltage fluctuations, they fail to describe quantitatively the magnitude of the fluctuations. The distribution of the atomistically calculated threshold voltage and its correlation with the number of dopants in the channel of the MOSFET's was analyzed based on a sample of 2500 microscopically different devices. The detailed analysis shows that the threshold voltage fluctuations are determined not only by the fluctuation in the dopant number, but also in the dopant position.

Asenov, Asen↗
NASA NTRS1988

Effect of a longitudinally applied voltage upon the growth of Zea mays seedlings

The electrical parameters that affect young seedling growth were investigated. Voltages ranging from 5 to 40 volts were applied longitudinally along the mesocotyl region of 4-day old Zea mays L. (cv Silver Queen) seedlings for periods of 3 or 4 hours. It was determined that: (a) making the tips of the seedlings electrically positive relative to the base strongly inhibited shoot growth at 5 volts, whereas the reverse polarity had no effect; (b) at higher voltages, making the tip of the seedlings negative caused less growth inhibition than the reverse polarity at each voltage level; (c) the higher the applied voltage the greater the degree of inhibition; and, (d) the more growth inhibition experienced by the plants the poorer, and slower, their recovery. Previous observations of a relationship between the amount of free indole-3-acetic acid in the mesocotyl cortex and the growth rate of the mesocotyl and of gravitropism-induced movement of labeled indole-3-acetic acid from the seed to the shoot lead to the prediction of a voltage-dependent gating of the movement of indole-3-acetic acid from the stele to the cortex. This provided the basis for attempting to alter the growth rate of seedlings by means of an applied voltage.

NASA Program Space Biology↗
NASA NTRS2006

Single Event Transients in Voltage Regulators for FPGA Power Supply Applications

As with other bipolar analog devices, voltage regulators are known to be sensitive to single event transients (SET). In typical applications, large output capacitors are used to provide noise immunity. Therefore, since SET amplitude and duration are generally small, they are often of secondary importance due to this capacitance filtering. In low voltage applications, however, even small SET are a concern. Over-voltages may cause destructive conditions. Under-voltages may cause functional interrupts and may also trigger electrical latchup conditions. In addition, internal protection circuits which are affected by load as well as internal thermal effects can also be triggered from heavy ions, causing dropouts or shutdown ranging from milliseconds to seconds. In the case of FPGA power supplies applications, SETS are critical. For example, in the case of Actel FPGA RTAX family, core power supply voltage is 1.5V. Manufacturer specifies an absolute maximum rating of 1.6V and recommended operating conditions between 1.425V and 1.575V. Therefore, according to the manufacturer, any transient of amplitude greater than 75 mV can disrupt normal circuit functions, and overvoltages greater than 100 mV may damage the FPGA. We tested five low dropout voltage regulators for SET sensitivity under a large range of circuit application conditions.

Poivey, Christian↗
NASA NTRS1993

Circuit and method for producing a flexible reference voltage

A flexible reference voltage circuit includes a circuit for producing a first digital signal representative of a range of reference voltage levels; a circuit for producing a second digital signal representative of a selected reference voltage level within the range of reference voltage levels; an adder for adding the first and second digital signals to produce a third digital signal; and a digital to analog converter for providing an output voltage in response to the third digital signal. The method of producing a flexible reference voltage performed by the circuit is also claimed. The invention can be used with a differential protection circuit to provide a series of trip level ranges, with a series of selectable trip levels in each range. This is accomplished in a high accuracy circuit which is relatively simple to construct, thereby minimizing size and complexity of the current sensor module, in differential protection applications, or the circuitry, if used in a power system controller. Standard digital logic components can be used to perform the necessary range/level decoding.

Thornton, Roger D.↗
NASA NTRS2015

High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

Power↗
NASA NTRS2015

High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources - a nominal 300-Volt high voltage input bus and a nominal 28-Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power supplies that provide power to the thruster auxiliary supplies, and two parallel 7.5 kilowatt power supplies that are capable of providing up to 15 kilowatts of total power at 300-Volts to 500-Volts to the thruster discharge supply. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall Effect Thruster. The performance of unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate the exceptional performance with full power efficiencies exceeding 97. With a space-qualified silicon carbide or similar high voltage, high efficiency power device, this design could evolve into a flight design for future missions that require high power electric propulsion systems.

Technology↗
NASA NTRS2017

Apparatus for Controlling Low Power Voltages in Space Based Processing Systems

A low power voltage control circuit for use in space missions includes a switching device coupled between an input voltage and an output voltage. The switching device includes a control input coupled to an enable signal, wherein the control input is configured to selectively turn the output voltage on or off based at least in part on the enable signal. A current monitoring circuit is coupled to the output voltage and configured to produce a trip signal, wherein the trip signal is active when a load current flowing through the switching device is determined to exceed a predetermined threshold and is inactive otherwise. The power voltage control circuit is constructed of space qualified components.

Petrick, David J.↗
NASA NTRS1971

Effect of load voltage on thin film cuprous sulfide: Cadmium sulfide solar cells thermally cycled in a simulated space environment

Thin-film Cu2S-CdS solar cells, loaded at various fixed values of load resistance, were thermally cycled for 1429 cycles in a simulated space environment. Cell performance was measured under controlled conditions in air before and after thermal cycling. These data were used to determine the effect of load voltage on cell performance. The performance of the cells was relatively independent of load voltage up to about 0.39 volt. This appears to be a threshold voltage, beyond which there was a significant loss in cell performance. Fortunately, this threshold voltage appears to be sufficiently higher than the maximum power voltage of 0.33 volt so that it can be avoided in most applications.

Smithrick, J. J.↗
NASA NTRS1971

Efficiency/reliability design requirements at low output voltage levels.

Higher efficiency and reliability are needed in the rectification used to produce low output voltages. To this end, the application of driven synchronous rectifier circuits is investigated. One reliability problem of such circuits, the ?double-on' resulting from storage time, is illustrated for low output voltages obtained from rectification of the square-wave outputs of low input voltage converters. A comparison of the rectification efficiency and reliability of driven transistor synchronous rectifiers with that of barrier diodes indicates that the choice of rectifiers in low output voltage applications is dependent on both the source and output voltage levels of the application.

Pasciutti, E. R.↗
NASA NTRS1974

The interaction of spacecraft high voltage power systems with the space plasma environment

The development of spacecraft with electrical loads that require high voltage power is discussed. The high voltage solar array has been considered for supplying d.c. power directly to high voltage loads such as ion thrusters and communication tubes without intermediate power processing. Space power stations for transferring solar power to earth are being studied in the 40 kilovolt, multikilowatt regime. Analytical and experimental studies have determined that with the advent of high voltage power, new problems will arise through the interaction of the high voltage surfaces with the charged particle environment of space. The interactive environment has been identified and duplicated to some extent in simulation facilities at NASA-Lewis Research Center and at several contractor locations.

Domitz, S.↗
NASA NTRS1975

Voltage monitoring system

A description is given of a system for monitoring the voltage at a remote location and determining when the voltage exceeds upper and lower levels. The system includes transmission lines for transmitting the voltage back to a central station and applying such to an amplifier having a pair of outputs. One of the outputs of the amplifier is applied to an oscillograph. The other output is fed through an isolation transformer, a full wave rectifier, to a pair of unijunctional transistor circuits for producing pulses when the voltage exceeds or drops below a predetermined level. These pulses, in turn, energize a relay which turns on the oscillograph for recording the voltages being monitored.

Canicatti, C. L.↗
NASA NTRS1976

Voltage stress effects on microcircuit accelerated life test failure rates

The applicability of Arrhenius and Eyring reaction rate models for describing microcircuit aging characteristics as a function of junction temperature and applied voltage was evaluated. The results of a matrix of accelerated life tests with a single metal oxide semiconductor microcircuit operated at six different combinations of temperature and voltage were used to evaluate the models. A total of 450 devices from two different lots were tested at ambient temperatures between 200 C and 250 C and applied voltages between 5 Vdc and 15 Vdc. A statistical analysis of the surface related failure data resulted in bimodal failure distributions comprising two lognormal distributions; a 'freak' distribution observed early in time, and a 'main' distribution observed later in time. The Arrhenius model was shown to provide a good description of device aging as a function of temperature at a fixed voltage. The Eyring model also appeared to provide a reasonable description of main distribution device aging as a function of temperature and voltage. Circuit diagrams are shown.

Johnson, G. M.↗
NASA NTRS1976

Flux-flow voltages during guided flux collapse from hollow superconducting cylinders

Voltages across diametrically opposite contact pairs on the outer surface of superconducting Nb tubes are found to depend dramatically upon the spatial configuration of the voltage-measuring leads relative to the positions of the moving magnetic flux lines. Experiments have been conducted to study these voltages for different wall thicknesses and for a variety of arrangements of the leads when flux in the hole and the wall of the Nb tube is made to exit or enter, completely or partially, by applying heat at a narrow strip along its length. Using the critical-state concept, a model for the change of flux and the resulting electric fields in the Nb tube on application of a heat pulse is presented. The resulting time-dependent and time-integrated voltages are calculated in excellent quantitative agreement with the experimental results. These results show that the flux-flow voltages across two contact points on a superconductor arise from the generation of an induced electric field over a chosen path in the superconductor between the contact points and from a change of magnetic flux through the surface bounded by the measuring leads and the chosen path in the superconductor.

Khanna, S. M.↗
NASA NTRS1980

Advanced electric propulsion system concept for electric vehicles. Addendum 1: Voltage considerations

The two electric vehicle propulsion systems that best met cost and performance goals were examined to assess the effect of battery pack voltage on system performance and cost. A voltage range of 54 to 540 V was considered for a typical battery pack capacity of 24 k W-hr. The highest battery specific energy (W-hr/kg) and the lowest cost ($/kW-hr) were obtained at the minimum voltage level. The flywheel system traction motor is a dc, mechanically commutated with shunt field control, and due to the flywheel the traction motor and the battery are not subject to extreme peaks of power demand. The basic system uses a permanent-magnet motor with electronic commutation supplied by an ac power control unit. In both systems battery cost were the major factor in system voltage selection, and a battery pack with the minimum voltage of 54 V produced the lowest life-cycle cost. The minimum life-cycle cost for the basic system with lead-acid batteries was $0.057/km and for the flywheel system was $0.037/km.

Raynard, A. E.↗
NASA NTRS1984

Forecasting of high voltage insulation performance: Testing of recommended potting materials and of capacitors

Nondestructive high voltage test techniques (mostly electrical methods) are studied to prevent total or catastrophic breakdown of insulation systems under applied high voltage in space. Emphasis is on the phenomenon of partial breakdown or partial discharge (P.D.) as a symptom of insulation quality, notably partial discharge testing under D.C. applied voltage. Many of the electronic parts and high voltage instruments in space experience D.C. applied stress in service, and application of A.C. voltage to any portion thereof would be prohibited. Suggestions include: investigation of the ramp test method for D.C. partial discharge measurements; testing of actual flight-type insulation specimen; perfect plotting resin samples with controlled defects for test; several types of plotting resins and recommendations of the better ones from the electrical characteristics; thermal and elastic properties are also considered; testing of commercial capaciters; and approximate acceptance/rejection/rerating criteria for sample test elements for space use, based on D.C. partial discharge.

Bever, R. S.↗
NASA NTRS1985

Incrementally Variable High-Voltage Supply

Programable power supply provides regulated output ranging from 2.5 to 2,500 volts. Exponential digital-to-analog converter provides low-voltage analog signal to power converter and to negative and positive high-voltage regulators. In response, converter furnishes voltage of approximate magnitude represented by analog signal, and regulators adjust voltage to precise magnitude. Entire voltage range covered in 169 steps. Total power consumption expected to be less than 2 watts.

Potter, D. W.↗