Results for “valleytronics” — Page 4

DOE OSTI2022

Boundary Modes from Periodic Magnetic and Pseudomagnetic Fields in Graphene

Single-layer graphene subject to periodic lateral strains is an artificial crystal that can support boundary spectra with an intrinsic polarity. This is analyzed by comparing the effects of periodic magnetic fields and strain-induced pseudomagnetic fields that, respectively, break and preserve time-reversal symmetry. In the former case, a Chern classification of the superlattice minibands with zero total magnetic flux enforces single counterpropagating modes traversing each bulk gap on opposite boundaries of a nanoribbon. For the pseudomagnetic field, pairs of counterpropagating modes migrate to the same boundary where they provide well-developed valley-helical transport channels on a single zigzag edge. Here, we discuss possible schemes for implementing this situation and their experimental signatures.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Valley relaxation of resident electrons and holes in a monolayer semiconductor: Dependence on carrier density and the role of substrate-induced disorder

Using time-resolved optical Kerr rotation, here we measure the low-temperature valley dynamics of resident electrons and holes in exfoliated WSe 2 monolayers as a systematic function of carrier density. In an effort to reconcile the many disparate timescales of carrier valley dynamics in monolayer semiconductors reported to date, we directly compare the doping-dependent valley relaxation in two electrostatically gated WSe 2 monolayers having different dielectric environments. In a fully encapsulated structure ( hBN / WSe 2 / hBN , where hBN is hexagonal boron nitride), valley relaxation is found to be monoexponential. The valley relaxation time τ v is quite long ( ~ 10 μ s ) at low carrier densities, but decreases rapidly to less than 100 ns at high electron or hole densities ≳ 2 × 10 12 cm – 2 . In contrast, in a partially encapsulated WSe 2 monolayer placed directly on silicon dioxide ( hBN / WSe 2 / SiO 2 ) , carrier valley relaxation is multiexponential at low carrier densities. The difference is attributed to environmental disorder from the SiO 2 substrate. Unexpectedly, very small out-of-plane magnetic fields can increase τ v , especially in the hBN / WSe 2 / SiO 2 structure, suggesting that localized states induced by disorder can play an important role in depolarizing spins and mediating the valley relaxation of resident carriers in monolayer transition-metal dichalcogenide semiconductors.

36 MATERIALS SCIENCE↗