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At least 73 records · Page 4

Robust supermoiré pattern in large-angle single-twist bilayers

Forming long-wavelength moiré superlattices in van der Waals bilayers that have a small-angle twist between the two layers has been a key approach for creating moiré flat bands. However, for small twist angles, strong lattice reconstruction creates domain walls and other forms of disorder in the moiré pattern, posing considerable challenges for engineering such platforms. At large twist angles, the lattices are more rigid, but it is difficult to produce flat bands in shorter-wavelength moiré superlattices. Here, in this study, we introduce an approach for tailoring robust supermoiré structures in bilayers of transition-metal dichalcogenides using only a single twist near a commensurate angle. Structurally, we show the spontaneous formation of a periodic arrangement of three inequivalent commensurate moiré stackings, where the angle deviation from the commensurate angle determines the periodicity. Electronically, we reveal a large set of van Hove singularities that indicate strong band hybridization, leading to flat bands near the valence band maximum. Our study extends the study of the interplay among band topology, quantum geometry and moiré superconductivity to the large twist angle regime.

electronic properties and materials↗

Absolute band-edge energies are over-emphasized in the design of photoelectrochemical materials

The absolute band-edge potentials of semiconductors, i.e., the conduction-band minimum, valence-band maximum, and their relative positions to solution redox potentials, are often invoked as design principles for photoelectrochemical (PEC) devices, especially for particulate photocatalysts. Here we show that reliance on these criteria is not necessary and limits the exploration of materials that will advance the fields of photoelectrochemistry, photochemistry, and photocatalysis. We discuss how i) band-edge energies are not singular parameters and instead shift with pH, electrolyte type, and surface chemistry; ii) the free energy of electrons and holes in comparison to that of solution redox couples dictates overall reaction spontaneity and thus reactivity; and iii) favorable charge-transfer kinetics can occur even when the relevant electrolyte redox potential(s) appear ‘outside’ the bandgap, enabled by the inversion or accumulation of electronic charge at the semiconductor surface. As a result, this discussion informs design principles for photocatalyst systems engineering for both one-electron redox reactions as well as for more complex multi-electron transfer reactions (e.g, H 2 evolution, H 2 O oxidation, CO 2 reduction).

14 SOLAR ENERGY↗

A compendium and meta-analysis of flatband potentials for TiO2, ZnO, and SnO2 semiconductors in aqueous media

Semiconductor/electrolyte interfaces are of great interest to numerous scientific fields including renewable energy, (photo)electrochemistry, and energy storage. The semiconductor flatband potential is a key parameter in locating the conduction band minimum or valence band maximum of the semiconductor material in electrolyte. Despite its importance for quantifying the energetic location of the semiconductor bands, literature reports for the same material demonstrate significant variability in the flatband potential. In this compendium and meta-analysis, reported flatband potentials of the common semiconductor materials TiO2, SnO2, and ZnO in aqueous electrolyte were compiled and assessed to quantify the spread in literature flatband potentials as well as determine the factors that lead to the significant spread. For TiO2, SnO2, and ZnO, literature flatband potentials referenced to the reversible hydrogen electrode span a range of nearly 2 V each. Flatband potential tabulations were separated by variables such as the solution pH, the crystalline polymorph, the crystal facet, the morphology, and the dimensions or combinations of these variables to assess the factors that contribute to the observed spread. Important and surprising findings from these categorizations are summarized: (1) Even for the narrowest categorizations, the spread in flatband potential is still large. (2) Flatband potentials of TiO2 and SnO2 follow the expected Nernstian dependence with solution pH. ZnO materials deviate from this Nernstian dependence. (3) In the aggregate, there is no statistically significant difference in the reported flatband potentials of anatase and rutile TiO2. Single crystal tabulations were the only distributions to have statistically significant differences in the flatband potential between anatase and rutile TiO2. (4) Anatase TiO2 materials with a nanotube morphology appear to have a +400 mV difference in mean flatband potential compared to all other morphologies, but we argue that this is likely due to widespread misuse of the Mott–Schottky analysis. Other interesting findings are revealed within the spread of literature flatband potentials, and possible explanations are provided to generate discussion. We also briefly review and discuss common techniques that were used to determine the flatband potential and the pitfalls/criticisms of these techniques. Last, we discuss some ways in which future research on the determination of the flatband potential can be performed to improve the reliability of reported values and the quality of the work. In total, the results from this meta-analysis suggest multiple factors can affect the measured flatband potential and that an abundance of caution should be applied when attempting to quantify the flatband potential of complex or nanostructured systems.

Patel, Milan Y. (ORCID:0000000291948141)↗

Overcoming the doping limit in GaAs by ion implantation and pulsed laser melting

Most semiconductors exhibit a saturation of free carriers when heavily doped with extrinsic dopants. This carrier saturation or “doping limit” is known to be related to the formation of native compensating defects, which, in turn, depends on the energy positions of their conduction band minimum and valence band maximum. Here, we carried out a systematic study on the n-type doping limit of GaAs via ion implantation and showed that this doping limitation can be alleviated by the transient process of pulsed laser melting (PLM). For n-type doping, both group VI (S) and amphoteric group IV (Si and Ge) dopants were implanted in GaAs. For comparison, p-type doping was also studied using Zn as the acceptor. Implanted dopants were activated by the PLM method, and the results are compared to rapid thermal annealing (RTA). Our results reveal that for all n-type dopants, while implantation followed by the RTA results in a similar saturation electron concentration of 2–3 × 10 18 cm –3 , the transient PLM process is capable of trapping high concentration of dopants in the substitutional site, giving rise to a carrier concentration of >10 19 cm –3 , exceeding the doping limit of GaAs. However, due to scatterings from point defects generated during PLM, the mobility of n-type GaAs after PLM is low (~80–260 cm 2 /V s). Subsequent RTA after PLM (PLM + RTA) is able to remove these point defects and recover the mobility to ~1000–2000 cm2/V s. The carrier concentrations of these PLM + RTA samples are reduced but are still a factor of 3 higher than RTA only GaAs. This can be understood as the dopants are already incorporated in the substitutional site after PLM; they are less likely to be “deactivated” by subsequent RTA. This work is significant to the understanding of doping mechanisms in semiconductors and provides a means for device applications, which require materials with ultra-high doping.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Na-functionalized Ir Te 2 monolayer: Suppressed charge ordering and electric field tuned topological phase transition

Two-dimensional materials with atomic thickness usually possess superior tunability by surface adsorption than their bulk counterparts, showing great promise for novel nanotechnologies. In layered transition-metal dichalcogenide IrTe 2 there exhibits complex structural distortions induced by charge ordering, resulting in difficulties for the applications of its corresponding monolayer material. Here, using first-principles calculations, we demonstrate that depositing Na on the surface of the IrTe 2 monolayer can suppress the structural distortion to form a stable NaIrTe 2 sheet. It naturally breaks the inversion symmetry to enable a Rashba-type spin splitting for potential spintronic applications. In addition, the introduced empty Na s band and the valence band of the IrTe 2 monolayer can be inverted by the application of a perpendicular electric field, achieving a quantum phase transition from normal to topological insulator. Such an electric field-controlled topological phase transition is promising for the realization of topological field-effect transistors. Furthermore, these findings not only provide a feasible approach to stabilizing the IrTe 2 monolayer, but also broaden its applications in spintronics and low-dissipation topoelectronics.

36 MATERIALS SCIENCE↗

Anomalous Hall effect at the Lifshitz transition in ZrTe 5

Zirconium pentatelluride ZrTe 5 is a topological semimetal. The presence of a temperature-induced Lifshitz transition, in which the Fermi level goes from the conduction band to the valence band with increasing temperature, provides unique opportunities to study the interplay between Fermi-surface topology, dynamics of Dirac fermions, and Berry curvature in one system. Here we present a combined experimental and theoretical study and show that a low-energy model can be used to understand the complicated Hall response and large anomalous Hall effect observed in ZrTe 5 over a wide range of temperature and magnetic field. We found that the anomalous Hall contribution dominates the Hall response in a narrow temperature window around the Lifshitz transition, away from which the orbital contribution dominates. Moreover, our results indicate that a topological phase transition coexists with the Lifshitz transition. To conclude, our model provides a unifying framework to understand the Hall effect in semimetals with large Zeeman splitting and nontrivial topology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Diamond /111/ studied by electron energy loss spectroscopy in the characteristic loss region

Unoccupied surface states on diamond (111) annealed at greater than 900 C are studied by electron energy loss spectroscopy with valence band excitation. A feature found at 2.1 eV loss energy is attributed to an excitation from occupied surface states into unoccupied surface states of energy within the bulk band gap. A surface band gap of approximately 1 eV is estimated. This result supports a previous suggestion for unoccupied band gap states based on core level energy loss spectroscopy. Using the valence band excitation energy loss spectrosocpy, it is also suggested that hydrogen is removed from the as-polished diamond surface by a Menzel-Gomer-Redhead mechanism.

Pepper, S. V.↗

Growth of Solid Solution Single Crystals

The solidification of a solid solution semiconductor, having a wide separation between liquidus and serious has been extensively studied in ground based, high magnetic field and Spacelab experiments. Two alloys of mercury cadmium telluride have been studied; mercury cadmium telluride with 80.0 mole percent of HgTe and 84.8 mole percent respectively. These alloys are extremely difficult to grow by directional solidification on earth due to high solutal and thermal density differences that give rise to fluid flow and consequent loss of interface shape and composition. Diffusion controlled growth is therefore impossible to achieve in conventional directional solidification. The ground based experiments consisted of growing crystals in several different configurations of heat pipe furnaces, NASA's Advanced Automated Directional Solidification Furnace (AADSF), and a similar furnace incorporated in a superconducting magnet capable of operating at up to 5T. The first microgravity experiment took place during the flight of STS-62 in March 1994, with the AADSF installed on the second United States Microgravity Payload (USMP-2). The alloy was solidified at 3/4 inch per day over a 9 day period, and for the first time a detailed evaluation was performed of residual acceleration effects. The second flight experiment took place in the fourth United States Microgravity Payload Mission (USMP-4) in November 1997. Due to contamination of the furnace system by a previously processed sample, the sample was not received until May 1998, and the preliminary analysis shows that the conditions prevailing during the experiment were quite different from the requirements requested prior to the mission. Early results are indicating that the sample may not accomplish the desired objectives. As with the USMP-2 mission, the results of the ground based experiments were compared with the crystal grown in orbit under microgravity conditions. On the earth, it has been demonstrated that the application of the magnetic field leads to a significant reduction in fluid flow, with improved homogeneity of composition. The field strength required to suppress flow increases with diameter of the material. The 8 mm diameter sample used here was less than the upper diameter limit for a ST magnet. The configuration for USMP-4 was changed so that the material was seeded and other processing techniques were also modified. It was decided to examine the effects of a strong magnetic field under the modified configuration and parameters. A further change from USMP-2 was that a different composition of material was grown, namely with 0.152 mole fraction of cadmium telluride rather than the 0.200 of the USMP-2 experiment. The objective was to grow highly homogeneous, low defect density material of a composition at which the conduction band and the valence band of the material impinge against each other. As indicated, the furnace was contaminated during the mission. As a result of solid debris remaining in the furnace bore, the cartridge in this experiment, denoted as SL1-417, was significantly bent during the insertion phase. During translation the cartridge scraped against the plate which isolates the hot and cold zones of the furnace. Thermocouples indicated that a thermal assymetry resulted. The scraping in the slow translation or crystal growth part of the processing was not smooth and it is probable that the jitter was sufficient to give rise to convection in the melt. Early measurements of composition from the surface of the sample have shown that the composition varies in an oscillatory manner.

Lehoczky, Sandor L.↗

Nanocomposites with high thermoelectric figures of merit

The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5k.sub.BT, wherein k.sub.B is the Boltzman constant and T is an average temperature of said nanocomposite composition.

Chen, Gang↗

Nanocomposites with high thermoelectric figures of merit

The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5k.sub.BT, wherein k.sub.B is the Boltzman constant and T is an average temperature of said nanocomposite composition.

Chen, Gang↗

Nanocomposites with High Thermoelectric Figures of Merit

The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5k(sub B)T, wherein k(sub B) is the Boltzman constant and T is an average temperature of said nanocomposite composition.

Chen, Gang↗

Ground-State In-Plane Light-Holes in GaAs/AlGaAs Structures [Book Chapter]

We have performed low-temperature magnetoluminescence, far-infrared cyclotron resonance, and magneto-transport measurements on narrow (4.5 nm) GaAs/Al 0.25 Ga 0.75 As single quantum-wells. The ground state in-plane valence band was found to be light and very nonparabolic, i.e., at zone center, the valence band mass is m v ≈ 0. 1 and for E f ≈ 10 meV, m v ≈ 0.25.

36 MATERIALS SCIENCE↗

Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe 2

Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as thickness-dependent changes in the valence band structure in post-transition-metal monochalcogenides and black phosphorus. Here, we use angle-resolved photoemission spectroscopy to study the electronic band structure of monolayer ReSe 2 , a semiconductor with a distorted 1T structure and in-plane anisotropy. By changing the polarization of incoming photons, we demonstrate that for ReSe 2 , in contrast to the 2H materials, the out-of-plane transition metal dz2 and chalcogen pz orbitals do not contribute significantly to the top of the valence band, which explains the reported weak changes in the electronic structure of this compound as a function of layer number. We estimate a band gap of 1.7 eV in pristine ReSe 2 using scanning tunneling spectroscopy and explore the implications on the gap following surface doping with potassium. Additionally, a lower bound of 1.4 eV is estimated for the gap in the fully doped case, suggesting that doping-dependent many-body effects significantly affect the electronic properties of ReSe 2 . Our results, supported by density functional theory calculations, provide insight into the mechanisms behind polarization-dependent optical properties of rhenium dichalcogenides and highlight their place among two-dimensional crystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Role of Metal Cocatalysts in the Photocatalytic Production of Hydrogen from Water Revisited

The use of photocatalysts to promote the production of molecular hydrogen from water, following the so-called water splitting reaction, continues to be a promising route for the green production of fuels. The molecular basis of this photocatalysis is the photoexcitation of electrons from the valence band of semiconductors to their conduction band, from which they can be transferred to chemical reactants, protons in the case of water, to promote a reduction reaction. The mechanism by which such a process takes place has been studied extensively using titanium oxide, a simple material that fulfills most requirements for water splitting. However, photocatalysis with TiO 2 tends to be highly inefficient; a cocatalyst, commonly a late transition metal (Au, Pt) in nanoparticle form, needs to be added to facilitate the production of H 2 . The metal is widely believed to help with the scavenging of the excited electrons from the conduction band of the semiconductor in order to prevent their recombination with the accompanying hole formed in the valence band, a step that cancels the initial photon absorption and competes with the photolytic chemical reduction. Here we review and analyze the molecular basis for that mechanism and argue for an alternative explanation, that the role of the metal is to help with the recombination of the atomic hydrogen atoms produced by proton reduction on the semiconductor surface instead. First, we summarize what is known about the electronic structure of these photocatalysts and how the electronic levels need to line up for the reduction of protons in water to be feasible. Next, we review the current understanding of the dynamics of the steps associated with the absorption of photons, the de-excitation via electron–hole pair recombination and fluorescence decay, and the electronic transitions that lead to proton reduction, and contrast those with the rates of the chemical steps required to produce molecular hydrogen. The following section addresses the changes introduced by the addition of the metal cocatalyst, comparatively evaluating its role as either an electron scavenger or a promoter of the recombination of hydrogen atoms. A discussion of the viable chemical mechanisms for the latter pathway is included. Finally, we briefly mention other associated aspects of this photocatalysis, including the possible promotion of H 2 production with visible light via resonant excitation of the surface plasmon of Au nanoparticles, the use of single-metal (Au, Pt) atom catalysts and of yolk–shell nanostructures, and the reduction of organic molecules. We end with a brief personal perspective on the possible generality of the concepts introduced in this Critical Review.

08 HYDROGEN↗

Theoretical study of the electronic, thermodynamic, and thermo-conductive properties of y-LiAlO2 with 6Li isotope substitutions for tritium production

Lithium aluminate has attracted researchers’ interests due to its wide applications. The structural, electronic, optical, lattice phonon thermodynamic, and thermo-conductive properties of ?-LiAlO2 with 6Li-isotope substitution are investigated by density functional theory and lattice phonon dynamics. The calculated results show that ?-LiAlO2 possesses a wide band-gap of 4.63 eV. The valence band is mainly formed by p orbitals of Li, O, and Al. The calculated lattice thermal conductivity of ?-LiAlO2 is found to be in good agreement over a wide range of temperatures with the available experimental data. The calculated dielectric matrix shows anisotropic behavior along z and x (or y) axes. Due to the wide band-gap, the optical conductivity of ?-LiAlO2 is mainly contributed from the electron hopping between valence-conduction bands. Substitution of 7Li with 6Li isotope in ?-LiAlO2 leads to observable differences in the lattice phonon frequencies at higher frequencies (>8THz) and to slight changes in corresponding thermal conductivity and the infrared and Raman spectra which are in good agreement with the measured data. The relevance of these properties for tritium production through 6Li absorbing neutron in nuclear reactors is discussed.

ab initio thermodynamics, ?-LiAlO2 and 6Li-isotope↗

Actinide 5f Occupations: The Case of PuO 2

In actinide chemistry, the formal number of open-shell 5f electrons, n open , is a well-defined quantity with an integer value. The effective 5f occupation, n f , additionally takes donation and back-donation into account, generally has a non-integer value, and has varying numerical definitions. The present study explores the important distinction between n f and n open in actinide chemistry with the example of PuO2, by using electronic structure methods with a relativistic Hamiltonian in combination with experimental Pu M 5 -edge high-energy-resolution X-ray absorption and emission spectroscopic data. The total donation to the metal in PuO 2 is between 3.1 and 2.4 electrons, depending on the type of calculation, most of which is to the Pu 6d and 5f shells. The donation into 5f is sensitive to the approximations in the electronic structure model but likely amounts to 1.6/0.8 electrons when the diffuse regions of the 5f shell are included/excluded. Valence band resonant inelastic X-ray scattering experiments demonstrate that Pu 5f electron density is present in the valence band; thus, there is a clear experimental signature of covalent bonding in PuO 2 . Pu M 5 -edge and M 3 -edge high-energy-resolution X-ray absorption near-edge structures for Pu 3+ and Pu 4+ in an aqueous solution are compared to PuO 2 , showing that Pu in PuO 2 has an nf closer to Pu 4+ (aq).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

BiVO 4 –Liquid Junction Photovoltaic Cell with 0.2% Solar Energy Conversion Efficiency

BiVO 4 is an important photoanode material for water oxidation, but its photoelectrochemistry regarding the triiodide/iodide redox couple is not well understood. Here, we use a combination of open circuit potential measurements, photoelectrochemical scans, and liquid surface photovoltage spectroscopy (SPS) to confirm that BiVO 4 /triiodide/iodide electrolyte contacts produce up to 0.55 V photovoltage under 23 mW/cm –2 illumination from a 470 nm LED. Inspired by these results, we construct FTO/BiVO 4 /KI(I 2 ) aq /Pt sandwich photoelectrochemical cells from electrochemically grown 0.5 × 0.5 cm 2 BiVO 4 and Mo-doped BiVO 4 films. Under AM 1.5 illumination, the devices have up to 0.22% energy conversion efficiency, 0.32 V photovoltage, and 1.8 mA cm –2 photocurrent. Based on SPS, hole transfer to iodide is sufficiently fast to prevent the competing water oxidation reaction. Mo doping increases the incident photon-to-current efficiency to up to 55% (at 425 nm under front illumination) by improving the BiVO 4 conductivity, but this comes at the expense of a lower photovoltage resulting from recombination at the Mo defects and a detrimental Schottky junction at the interface with FTO. Additional photovoltage losses are caused by the offset between the BiVO 4 valence band edge and the triiodide/iodide electrochemical potential and by electron back transfer to iodide at the FTO back contact (shunting). Overall, this work provides the first example of a BiVO 4 –liquid photovoltaic cell and an analysis of its limitations. Finally, even though the larger band gaps of metal oxides constrain their solar energy conversion efficiency, their transparency to visible light and deep valence bands makes them suitable for tandem photovoltaic devices.

14 SOLAR ENERGY↗

The Importance of Avoided Crossings in Understanding High Valley Degeneracy in Half‐Heusler Thermoelectric Semiconductors

Abstract Half‐Heusler (hH) compounds are promising candidates for inexpensive, low‐toxicity thermoelectric materials. It is well known that engineering electronic bands with high valley degeneracy is an effective approach for enhancing the performance of thermoelectric materials, and there are several routes for achieving high valley degeneracy in hH systems. For instance, there are multiple locations in the first Brillouin zone where the valence band maximum can be found (at the Γ‐, L‐, or W‐point), and there are two competing low‐lying conduction bands at the X‐point, where the conduction band minimum is located. By converging the multiple valence band and conduction band extrema, the valley degeneracy, and hence, performance of these materials can be improved. Here, group theoretical and tight‐binding approaches, in addition to first‐principles density functional theory calculations, are used to study the chemical origins of various band extrema in both the n‐type and p‐type compounds, with particular focus on ZrNiSn and NbFeSb. Specifically, the importance of avoided crossings is explained. The results of this work can be used to better understand and develop design strategies for engineering better performing hH thermoelectrics.

Brod, Madison K.↗