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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Atom vacancies and electronic transmission Stark effects in boron nanoflake junctions

Finite-sized boron nanomaterials have received little attention in comparison to their graphene-like 2D boron analogues. It is with systems of precise atomic structures where the electrical conductance can be most fruitfully analyzed at the fundamental level. To understand how conductance varies with respect to the electronic structure, and particularly with vacancies, we study finite-sized boron nanoflakes (BNFs) and closely examine their remarkable changes in physical properties. Unlike carbon-based materials, we find from non-equilibrium Green's functions density functional theory (NEGF-DFT) calculations that the charge transport of BNFs with 35–37 atoms is modulated by site-specific atomic vacancies. Here, the BNF with no vacancy (B 37 ) shows significantly lower conductivity (9.23 μS), than B 36 with one vacancy (46.1 μS), and lower still than with two vacancies (B 35 , 54.2 μS). From the thermopower function, these nanomaterials change from strong hole conductors to electron and back to hole conductors with the addition of each vacancy, from a doublet (B 37 ) to singlet (B 36 ) to doublet (B 35 ) ground state, respectively.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Suppression of thermal conductivity and electronic correlations in Fe 1– x Ru x Sb 2 (0 ≤ x ≤ 0.6)

We present simultaneous suppression of FeSb 2 thermal conductivity and electronic correlations in Fe 1– x Ru x Sb 2 (0 ≤ x ≤ 0.6) single crystal alloys. Small energy gap Δ 1 in Kondo-insulator-like semiconductor FeSb 2 associated with impurity in-gap state increases whereas the intrinsic bandgap Δ 2 decreases upon Ru substitution on Fe atomic site. Thermopower is suppressed along with the intrinsic bandgap and with the thermal conductivity. The more delocalized 4 d character of atomic orbital of Ru brings suppression of electronic correlations, but also an increase in impurity density which reduces phonon mean free path and surface scattering length. Our results indicate a range of Ru doping x where nanostructuring could be used to suppress thermal conductivity further, potentially toward the amorphous limit.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Nernst power factor and figure of merit in the compensated semimetal ScSb

Recently, topological semimetals have emerged as strong candidates for solid-state thermomagnetic refrigerators due to their enhanced Nernst effect. This enhancement arises from the combined contributions of the Berry-curvature-induced anomalous Nernst coefficient associated with topological bands and the normal Nernst effect resulting from synergistic electron-hole compensation. Generally, these two effects are intertwined in topological semimetals, making it challenging to evaluate them independently. Here, we report the observation of a high Nernst effect in the electron-hole compensated semimetal ScSb with topologically trivial electronic band structures. Remarkably, we find a high maximum Nernst power factor of 𝑃⁢𝐹 𝑁 ∼ 35 × 10 −4 W m −1 K −2 in ScSb. The Nernst thermopower (𝑆 𝑥⁢𝑦 ) exhibits a peak of ∼ 47 µ⁢V/K at 12 K and 14 T, yielding a Nernst figure of merit (𝑧 𝑁 ) of ∼ 28 × 10 −4 K −1 . Notably, despite its trivial electronic band structure, both the 𝑃⁢𝐹 𝑁 and 𝑧 𝑁 values of ScSb are comparable to those observed in topological semimetals with Dirac band dispersions. In conclusion, the origin of the large Nernst signal in ScSb is explained by compensated electron and hole carriers, through Hall resistivity measurements, angle-resolved photoemission spectroscopy, and density functional theory calculations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Reverse phonon thermal flux from an applied electric field

In the phenomenon known as electron drag, a phonon thermal flux is established in a conducting crystal by an electric field applied under isothermal conditions through directed transfer of quasimomentum from the electronic charge current to the phonon subsystem. Prior understanding of this phenomenon involves a thermal current composed of low-frequency acoustic phonons that is in the same direction as the charge current. This results in an increase of the Peltier thermopower. Here, we show that it is also possible to establish a phonon thermal current that is in the opposite direction to the charge current, which we refer to as a reverse phonon thermal flux. We demonstrate this behavior both through a simple qualitative model and through first-principles calculations performed for three materials: p-type 𝜃-TaN, n-type BAs, and n-type Si. The reverse phonon flux is shown to arise through intervalley electron-phonon scattering processes involving high-frequency acoustic phonons. Unlike n-BAs and n-Si, the combined features in the band structure and phonon dispersions of p-type 𝜃-TaN promote a particularly large reverse phonon thermal flux comparable in magnitude to the oppositely directed thermal flux from low-frequency phonons. Finally, this work highlights a previously unrecognized behavior in the coupled electron-phonon system and advances our understanding of the rich physics of transport in solids.

lattice dynamics↗
DOE OSTI2020

Thermoelectric transport of the half-filled lowest Landau level in a p -type Ge/SiGe heterostructure

In this work, we investigate the thermoelectric transport properties of the half-filled lowest Landau level v = 1 / 2 in a gated two-dimensional hole system in a strained Ge/SiGe heterostructure. The electron-diffusion dominated regime is achieved below 600 mK, where the diffusion thermopower S x x d at v = 1 / 2 shows a linear temperature dependence. In contrast, the diffusion-dominated Nernst signal S x y d of v = 1 / 2 is found to approach zero, which is independent of the measurement configuration (sweeping magnetic field at a fixed hole density or sweeping the density by a gate at a fixed magnetic field).

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Thermoelectric power of Sachdev-Ye-Kitaev islands: Probing Bekenstein-Hawking entropy in quantum matter experiments

The Sachdev-Ye-Kitaev (SYK) model describes electrons with random and all-to-all interactions and realizes a many-body state without quasiparticle excitations and a nonvanishing extensive entropy $S_0$ in the zero-temperature limit. Its low-energy theory coincides with the low-energy theory of near-extremal charged black holes with Bekenstein-Hawking entropy $S_0$. Several mesoscopic experimental configurations realizing SYK quantum dynamics over a significant intermediate temperature scale have been proposed. We investigate quantum thermoelectric transport in such configurations and describe low-temperature crossovers out of SYK criticality into regimes either with Fermi liquid behavior, with a Coulomb blockade, or criticality associated with Schwarzian quantum gravity fluctuations. In this work, our results show that thermopower measurements can serve as a direct probe for $S_0$.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Three-dimensional ferromagnetism and magnetotransport in van der Waals Mn-intercalated tantalum disufide

Van der Waals (vdW) ferromagnets are an important class of materials for spintronics applications. The recent discovery of atomically vdW magnets CrI 3 and Cr 2 Ge 2 Te 6 has triggered a renaissance in the area of two-dimensional (2D) magnetism. Herein we systematically studied 2H-Mn 0.28 TaS 2 single crystal, a 2D vdW ferromagnet with T c ~ 82.3K, and a large in-plane magnetic anisotropy. Mn K-edge x-ray absorption spectroscopy was measured to provide information on its electronic state and local atomic environment. The detailed magnetic isotherms measured in the vicinity of T c indicates that the spin coupling inside 2H-Mn 0.28 TaS 2 is of a 3D Heisenberg type coupled with the attractive long-range interaction between spins that decay as J(r) ≈ r –4.85 . Both resistivity ρ(T) and thermopower S(T) exhibit anomalies near T c , confirming that the hole-type transport carriers strongly interact with local moments. Furthermore, an unusual angle-dependent magnetoresistance is further observed, suggesting a possible field-induced novel magnetic structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Differentiating Hund from Mott physics in a three-band Hubbard-Hund model: Temperature dependence of spectral, transport, and thermodynamic properties

We study the interplay between Mott physics, driven by Coulomb repulsion U, and Hund physics, driven by Hund's coupling J, for a minimal model for Hund metals, the orbital-symmetric three-band Hubbard-Hund model (3HHM) for a lattice filling of 1/3. Hund-correlated metals are characterized by spin-orbital separation (SOS), a Hund's-rule-induced two-stage Kondo-type screening process, in which spin screening occurs at much lower energy scales than orbital screening. By contrast, in Mott-correlated metals, lying close to the phase boundary of a metal-insulator transition, the SOS window becomes negligibly small and the Hubbard bands are well separated. Using dynamical mean-field theory and the numerical renormalization group as real-frequency impurity solver, we identify numerous fingerprints distinguishing Hundness from Mottness in the temperature dependence of various physical quantities. Furthermore, These include ARPES-type spectra, the local self-energy, static local orbital and spin susceptibilities, resistivity, thermopower, and lattice and impurity entropies. Our detailed description of the behavior of these quantities within the context of a simple model Hamiltonian will be helpful for distinguishing Hundness from Mottness in experimental and theoretical studies of real materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Evidence of ordering in Cu-Ni alloys from experimental electronic entropy measurements

Phase diagrams exhibiting extended solid-solution and lenslike melting are often reproduced using ideal solutions, where ideal mixing considers a fully random configurational entropy of mixing. In the field of irreversible thermodynamics, experimental measurements of the composition variation of high-temperature electronic transport and molten-state properties suggest, however, a strong role for short-range atomic ordering in these systems. Herein, measurements of the thermopower and resistivity are reported for Cu-Ni solid solutions as a function of temperature and composition. The electronic transport properties were interpreted with an irreversible thermodynamic framework, revealing a large electronic contribution to the entropy of mixing. By considering a cluster model for the configurational entropy that uses the electronic contribution to inform the existence of ordered associates, we rationalize such a contribution of the electronic entropy with the ideal entropy of mixing commonly used to model such systems. In conclusion, these results suggest that the short-range order of the atoms plays a significant role in both solid and liquid states, even when there are no dominant intermetallic compounds in these alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2020

A-type antiferromagnetic order in MnBi 4 Te 7 and MnBi 6 Te 10 single crystals

MnBi 4 Te 7 and MnBi 6 Te 10 are two members with n = 2 and 3 in the family of MnBi 2 n Te 3 n + 1 where the n = 1 member, MnBi 2 Te 4 , has been intensively investigated as the first intrinsic antiferromagnetic topological insulator. In this work, we report the A-type antiferromagnetic order in these two compounds by measuring magnetic properties, electrical and thermal transport, specific heat, and single-crystal neutron diffraction. Both compounds order into an A-type antiferromagnetic structure as does MnBi 2 Te 4 with ferromagnetic planes coupled antiferromagnetically along the crystallographic c axis. While no evidence for any in-plane ordered moment is found for MnBi 2 Te 4 or MnBi 6 Te 10 , weak reflections at half- L positions along the [0 0 L ] direction are observed for MnBi 4 Te 7 suggesting an in-plane ordered moment around 0.15 μ B / Mn . The ordering temperature, T N , is 13 K for MnBi 4 Te 7 and 11 K for MnBi 6 Te 10 . The magnetic order is also manifested in the anisotropic magnetic properties. Furthermore, for both compounds, the interlayer coupling is weak and a spin-flip transition occurs when a magnetic field of around 1.6 kOe is applied along the c axis at 2 K. As observed in MnBi 2 Te 4 , when cooling across T N , no anomaly was observed in the temperature dependence of thermopower. On the other hand, critical scattering effects are observed in thermal conductivity although the effect is less pronounced than that in MnBi 2 Te 4 .

36 MATERIALS SCIENCE↗
DOE OSTI2021

Iridium valence variation and carrier sign tuning in ( Ca , Ba ) x La 2 – x CuIrO 6 double perovskites

Here, we report the structure and properties of ( Ca , Ba ) x La 2 – x CuIrO 6 . The rock-salt double perovskite structure goes through a P 1 ¯ to P 2 1 / n phase transition with increasing Ba content but not with Ca content. In both cases, the Ir ion is oxidized from 4 + to 5 + with increasing substitution. Transport and magnetic properties measurements reveal that all compositions are insulating with hysteretic spin-freezing magnetic behavior. Seebeck coefficient measurements reveal a large thermopower change from + 176 μ V /K in La 2 CuIrO 6 to – 223 μ V /K with increasing Ba content in Ba x La 2 – x CuIrO 6 . This behavior is modeled well by the Heikes formula for correlated hopping conduction. ( Ca , Ba ) x La 2 – x CuIrO 6 provides a model system for investigations of other systems with similar carrier sign tuning, with applications toward semiconductors and thermoelectric materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Thermally generated spin current in the topological insulator Bi 2 Se 3

We present measurements of thermally generated transverse spin currents in the topological insulator Bi2Se3, thereby completing measurements of interconversions among the full triad of thermal gradients, charge currents, and spin currents. We accomplish this by comparing the spin Nernst magneto-thermopower to the spin Hall magnetoresistance for bilayers of Bi 2 Se 3 /CoFeB. We find that Bi 2 Se 3 does generate substantial thermally driven spin currents. A lower bound for the ratio of spin current density to thermal gradient is $\frac{J_{s}}{∇_{x}T}$ = (4.9 ± 0.9) × 10 6 ($\frac{ℏ}{2e}$) $\frac{A m^{-2}}{K μm^{-1}}$, and a lower bound for the magnitude of the spin Nernst ratio is -0.61 ± 0.11. The spin Nernst ratio for Bi 2 Se 3 is the largest among all materials measured to date, two to three times larger compared to previous measurements for the heavy metals Pt and W. Strong thermally generated spin currents in Bi 2 Se 3 can be understood via Mott relations to be due to an overall large spin Hall conductivity and its dependence on electron energy.

36 MATERIALS SCIENCE↗
DOE OSTI2022

John Goodenough and the Many Lives of Transition-Metal Oxides

In honor of John Goodenough’s centennial birthday, I discuss some of his insights into magnetism and the role of mixed valence in transition-metal oxides. His ideas form an important part of the continuing evolution of our understanding of these fascinating materials with a wide range of technologically-important functionalities. In particular, I will mention connections to phenomena such as colossal magnetoresistance, enhanced thermopower, and high-temperature superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Synthesis and structural characterization of orthorhombic Cu 3– δ Sb ( δ ≈ 0.1) and hexagonal Cu 3 Sb 1–x In x (x ≈ 0.2) phases

Cu 3 Sb is a known copper-rich phase in the Cu–Sb binary phase diagram. It is reported to be dimorphic, with a low-temperature form adopting the orthorhombic Cu 3 Ti structure type (space group Pmmn , No. 59). The high-temperature form crystallizes in the cubic space group F m 3 - m $Fm‾{3}m$ (No. 225), and is isostructural with BiF 3 . Neither polymorph has been carefully characterized to date, with both structures being assigned to the respective structure type, but never refined. With this study, we provide structural evidence, based on single-crystal and powder X-ray diffraction data that the low-temperature orthorhombic phase exists with a significant amount of defects on one of the Cu-sites. As a result, its composition is not Cu 3 Sb, but rather Cu 3– δ Sb ( δ = 0.13(1)). The cubic form could not be accessed as a part of this study, but another Cu-rich phase, Cu 3 Sb ≈0.8 In ≈0.2 , was also identified. It adopts the hexagonal Ni 3 Sn structure type (space group P 6 3 / mmc , No. 194) and represents an In-substituted variant of a hitherto unknown structural modification of Cu 3 Sb. Whether the latter can exist as a binary phase, or what is the minimum amount of In inclusions needed to stabilize it remains to be determined. Measurements of the thermopower of Cu 3– δ Sb ( δ = 0.13(1)) were conducted in the range of 300–600 K and demonstrated a maximum value of ca. 50 μV/K at 600 K, indicative of a p -type transport mechanism. Electrical resistivity measurements for the same sample confirmed that it exhibits metallic-like behavior, with a room temperature value of 0.43 mΩ cm. Electronic structure calculations show the absence of a band gap. Thermal analysis was utilized to ascertain the congruent melting of both phases.

Crystallography↗
DOE OSTI2020

Tailoring Charge Transport and Magnetism in Complex Half-Heusler/Full-Heusler Nanocomposites (Final Report)

This project exploits (1) the facile co-crystallization of the half-Heusler (HH) and full-Heusler (FH) structures, (2) the high coherency and stability of the HH/FH interfaces, and (3) the solid-state inter-conversion between HH and FH structures through local atomic diffusion, to investigate, for selected compositions of the HH and FH phases, the effect of size, dimensionality, dispersion and volume fraction of FH nanostructures on the electronic, phonon and magnetic behavior of the resulting HH/FH nanocomposites. Our goal is to identify and control key material and growth parameters governing phase formation, microstructural evolution, and to understand the mechanism by which these changes of the internal structure modify the material’s performance. To elucidate the mechanism by which the FH nanostructures regulate electronic charge transport and induce ferromagnetism within non-magnetic and magnetic semiconducting HH matrices, suitable series of HH/0D-FH and HH/2D-FH nanocomposites will be fabricated using synthesis conditions suggested by theoretical calculations of the formation energy and stability of various FH phases (varying M) in HH matrices with known chemical composition. The structure of the HH/FH interfaces (size, chemical composition, volume fraction and dispersion) will be investigated along with the evaluation of the electronic (carrier density, mobility, thermopower, electrical conductivity, effective mass), thermal and magnetic (susceptibility, magnetization etc.) properties of the resulting HH/FH nanocomposites.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Hierarchical Hybrid Multifunctional Materials through Interface Engineering

This project focuses on the development of stimuli-responsive hybrid multifunctional materials. We place emphasis on the design, synthesis, structural characterization, evaluation of functional properties (electronic, thermal and optical) of several (1-x)Cu 2 Se/(x)WBGS hierarchical bulk composites between Cu 2 Se, a narrow band gap semiconductor (NBGS), with a range of wider band gap semiconductors (WBGS) such as CuMSe 2 (M = Al, Ga, In, Fe, Cr) and Cu 4 TiSe 4 . Cu2Se is a well-studied NBGS with excellent thermoelectric properties (high electrical conductivity, large thermopower, etc.) while CuMSe 2 and Cu 4 TiSe 4 are high performance solar absorber materials (large band gap, large absorption coefficient, etc.). Our primary objectives are (i) to demonstrate the ability to integrate dissimilar functional properties such as large optical absorption coefficient and high electronic conductivity, within (1-x)Cu 2 Se/(x)WBGS composite; and (ii) to establish the correlation between the hierarchical structural entanglement of Cu 2 Se with WBGS (CuMSe 2 or Cu 4 TiSe 4 ) phase, the interactions between native electronic defects within the coexisting phases in the resulting (1-x)Cu 2 Se/(x)WBGS bulk composites , and the impacts on their electronic conductivity, thermal transport and optical properties.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Combining Spin-Seebeck and Nernst Effects in Aligned MnBi/Bi Composites

The spin-Seebeck effect (SSE) is an advective transport process traditionally studied in bilayers composed of a ferromagnet (FM) and a non-magnetic metal (NM) with strong spin-orbit coupling. In a temperature gradient, the flux of magnons in the FM transfers spin-angular momentum to electrons in the NM, which by the inverse spin-Hall effect generates an SSE voltage. In contrast, the Nernst effect is a bulk transport phenomenon in homogeneous NMs or FMs. These effects share the same geometry, and we show here that they can be added to each other in a new combination of FM/NM composites where synthesis via in-field annealing results in the FM material (MnBi) forming aligned needles inside an NM matrix with strong spin-orbit coupling (SOC) (Bi). Through examination of the materials’ microstructural, magnetic, and transport properties, we searched for signs of enhanced transverse thermopower facilitated by an SSE contribution from MnBi adding to the Nernst effect in Bi. Our results indicate that these two signals are additive in samples with lower MnBi concentrations, suggesting a new way forward in the study of SSE composite materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Scanning tunneling thermometer

Various examples are provided related to scanning tunneling thermometers and scanning tunneling microscopy (STM) techniques. In one example, a method includes simultaneously measuring conductance and thermopower of a nanostructure by toggling between: applying a time modulated voltage to a nanostructure disposed on an interconnect structure, the time modulated voltage applied at a probe tip positioned over the nanostructure, while measuring a resulting current at a contact of the interconnect structure; and applying a time modulated temperature signal to the nanostructure at the probe tip, while measuring current through a calibrated thermoresistor in series with the probe tip. In another example, a device includes an interconnect structure with connections to a first reservoir and a second reservoir; and a scanning tunneling probe in contact with a probe reservoir. Electrical measurements are simultaneously obtained for temperature and voltage applied to a nanostructure between the reservoirs.

Chinivaranahalli Shastry, Abhay Shankar↗