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At least 73 records · Page 4

Current-Regulated Arc Modulator Optimization

n this study, the performance of a current-regulated arc modulator was investigated with a focus on its role in initiating and sustaining plasma discharge within the Magnetron Body of the LINAC system. The analysis centered on how switching components, circuit topology, and feedback loop architecture influence critical factors such as energy efficiency, discharge stability, and long-term plasma containment. Particular attention was given to variations in pulse termination behavior, as observed through oscilloscope traces, which revealed inconsistencies affecting the duty factor and cathode temperature. These fluctuations have downstream effects on the cesium-coated cathode surface, thereby impacting H⁻ ion production and beam reliability. Simulation-based testing in LTspice was used to evaluate noise suppression techniques and arc current regulation schemes, revealing how optimized snubber networks, improved pulse shaping, and feedback stability can mitigate modulator-induced noise. The results ide

Campos, Nathan↗

Development of a Power Electronics Unit for the Space Station Plasma Contactor

A hollow cathode plasma contactor has been baselined as a charge control device for the Space Station (SS) to prevent deleterious interactions of coated structural components with the ambient plasma. NASA LeRC Work Package 4 initiated the development of a plasma contactor system comprised of a Power Electronics Unit (PEU), an Expellant Management Unit (EMU), a command and data interface, and a Plasma Contactor Unit (PCU). A breadboard PEU was designed and fabricated. The breadboard PEU contains a cathode heater and discharge power supply, which were required to operate the PCU, a control and auxiliary power converter, an EMU interface, a command and telemetry interface, and a controller. The cathode heater and discharge supplies utilized a push-pull topology with a switching frequency of 20 kHz and pulse-width-modulated (PWM) control. A pulse ignition circuit derived from that used in arcjet power processors was incorporated in the discharge supply for discharge ignition. An 8088 based microcontroller was utilized in the breadboard model to provide a flexible platform for controller development with a simple command/data interface incorporating a direct connection to SS Mulitplexer/Demultiplexer (MDM) analog and digital I/O cards. Incorporating this in the flight model would eliminate the hardware and software overhead associated with a 1553 serial interface. The PEU autonomously operated the plasma contactor based on command inputs and was successfully integrated with a prototype plasma contactor unit demonstrating reliable ignition of the discharge and steady-state operation.

Hamley, John A.↗

Development and Testing of a new Current-Regulated Arc Modulator for the LINAC

In this study, the performance of a current-regulated arc modulator was investigated with a focus on its role in initiating and sustaining plasma discharge within the Magnetron Body of the LINAC system. The analysis centered on how switching components, circuit topology, and feedback loop architecture influence critical factors such as energy efficiency, discharge stability, and long-term plasma containment. Particular attention was given to variations in pulse termination behavior, as observed through oscilloscope traces, which revealed inconsistencies affecting the duty factor and cathode temperature. These fluctuations have downstream effects on the cesium-coated cathode surface, thereby impacting H⁻ ion production and beam reliability. Simulation-based testing in LTspice was used to evaluate noise suppression techniques and arc current regulation schemes, revealing how optimized snubber networks, improved pulse shaping, and feedback stability can mitigate modulator-induced noise. The results identified hardware level parameters that significantly enhance discharge repeatability and improve overall plasma performance under operational conditions.

Campos, Nathan [Unlisted, US; Fermilab]↗

Highly Efficient Room‐Temperature Spin‐Orbit‐Torque Switching in a Van der Waals Heterostructure of Topological Insulator and Ferromagnet

Abstract All‐Van der Waals (vdW)‐material‐based heterostructures with atomically sharp interfaces offer a versatile platform for high‐performing spintronic functionalities at room temperature. One of the key components is vdW topological insulators (TIs), which can produce a strong spin‐orbit‐torque (SOT) through the spin‐momentum locking of their topological surface state (TSS). However, the relatively low conductance of the TSS introduces a current leakage problem through the bulk states of the TI or the adjacent ferromagnetic metal layers, reducing the interfacial charge‐to‐spin conversion efficiency ( q ICS ). Here, a vdW heterostructure is used consisting of atomically‐thin layers of a bulk‐insulating TI Sn‐doped Bi 1.1 Sb 0.9 Te 2 S 1 and a room‐temperature ferromagnet Fe 3 GaTe 2, to enhance the relative current ratio on the TSS up to ≈20%. The resulting q ICS reaches ≈1.65 nm −1 and the critical current density J c ≈0.9 × 10 6 Acm −2 at 300 K, surpassing the performance of TI‐based and heavy‐metal‐based SOT devices. These findings demonstrate that an all‐vdW heterostructure with thickness optimization offers a promising platform for efficient current‐controlled magnetization switching at room temperature.

2D ferromagnet↗

Switching of a Magnet by Spin-Orbit Torque from a Topological Dirac Semimetal

Recent experiments show that topological surface states (TSS) in topological insulators (TI) can be exploited to manipulate magnetic ordering in ferromagnets. In principle, TSS should also exist for other topological materials, but it remains unexplored as to whether such states can also be utilized to manipulate ferromagnets. In this paper, current-induced magnetization switching enabled by TSS in a non-TI topological material, namely, a topological Dirac semimetal α-Sn, is reported. The experiments use an α-Sn/Ag/CoFeB trilayer structure. The magnetization in the CoFeB layer can be switched by a charge current at room temperature, without an external magnetic field. The data show that the switching is driven by the TSS of the α-Sn layer, rather than spin-orbit coupling in the bulk of the α-Sn layer or current-produced heating. The switching efficiency is as high as in TI systems. This shows that the topological Dirac semimetal α-Sn is as promising as TI materials in terms of spintronic applications.

36 MATERIALS SCIENCE↗

Review on Switching Device Fault, Protection, and Fault-Tolerant Topologies of Current Source Inverter

The fault modes, protection, and fault-tolerant topologies of voltage source inverters have been investigated for decades. However, issues and solutions related to the fault modes of current source inverters are less well understood. This paper summarizes some of the key topics relevant to a fault in current source inverters, including types of fault modes and their ramifications, post-fault protection methods, and fault- tolerant current source inverter topologies that have been presented in the literature.

42 ENGINEERING↗

Hyperswitch Network For Hypercube Computer

Data-driven dynamic switching enables high speed data transfer. Proposed hyperswitch network based on mixed static and dynamic topologies. Routing header modified in response to congestion or faults encountered as path established. Static topology meets requirement if nodes have switching elements that perform necessary routing header revisions dynamically. Hypercube topology now being implemented with switching element in each computer node aimed at designing very-richly-interconnected multicomputer system. Interconnection network connects great number of small computer nodes, using fixed hypercube topology, characterized by point-to-point links between nodes.

Chow, Edward↗

Current-Induced Reversal of Anomalous Hall Conductance in Twisted Bilayer Graphene

It is observed experimentally that the sign of the Hall resistance can be flipped by a dc electric current in the twisted bilayer graphene (TBG) at 3/4 filling of the fourfold degenerate conduction flat bands. The experiment implies a switching of the valley polarization (VP) and topology in TBG. In this work, we present a theory on the current-induced switching of VP and topology. The presence of current in the bulk causes the redistribution of electron occupation in bands near the Fermi energy, which then deforms and shifts the band dispersion due to the Coulomb interaction. Above a critical current, the original occupied and empty bands can be swapped, resulting in the switching of VP and topology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Power Conversion Systems Enabled by SiC BiDFET Device

The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. Furthermore, the matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac-ac and ac dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

42 ENGINEERING↗

Topological quantum interference in a pumped Su-Schrieffer-Heeger lattice

Topological quantum interference emerges from the interplay between quantum mechanics and topology. We present evidence for two types of such interference phenomenon that can result from the quantum dynamics of initial topological states. We realize both types of topological quantum interference in a pumped non-Hermitian Su-Schrieffer-Heeger lattice that can be implemented by creation and coherent control of excitonic states of trapped neutral atoms. On quenching the system from the topological to the gapless phases and then back again, we find that interference patterns develop in the gapless phase and also after switching back to the topological phase. These patterns occur both as many-excitation interferences generated in the presence of pumping the atoms at the end sites, and as one- and two-excitation interferences seen in the absence of pumping when starting with edge excitations. Investigation of the excitation dynamics shows that these interference patterns originate from the topological nature of the initial states and are very different from quantum interferences originating from nontopological states of the lattice. Our results also reveal that unlike well-known situations where topological states are protected against local perturbations, in the non-Hermitian SSH systems resulting from driving the excited-state populations, a local dissipation at each lattice site can suppress both the topological interference and the total population of the lattice.

74 ATOMIC AND MOLECULAR PHYSICS↗

Series-Connected Buck Boost Regulators

A series-connected buck boost regulator (SCBBR) is an electronic circuit that bucks a power-supply voltage to a lower regulated value or boosts it to a higher regulated value. The concept of the SCBBR is a generalization of the concept of the SCBR, which was reported in "Series-Connected Boost Regulators" (LEW-15918), NASA Tech Briefs, Vol. 23, No. 7 (July 1997), page 42. Relative to prior DC-voltage-regulator concepts, the SCBBR concept can yield significant reductions in weight and increases in power-conversion efficiency in many applications in which input/output voltage ratios are relatively small and isolation is not required, as solar-array regulation or battery charging with DC-bus regulation. Usually, a DC voltage regulator is designed to include a DC-to-DC converter to reduce its power loss, size, and weight. Advances in components, increases in operating frequencies, and improved circuit topologies have led to continual increases in efficiency and/or decreases in the sizes and weights of DC voltage regulators. The primary source of inefficiency in the DC-to-DC converter portion of a voltage regulator is the conduction loss and, especially at high frequencies, the switching loss. Although improved components and topology can reduce the switching loss, the reduction is limited by the fact that the converter generally switches all the power being regulated. Like the SCBR concept, the SCBBR concept involves a circuit configuration in which only a fraction of the power is switched, so that the switching loss is reduced by an amount that is largely independent of the specific components and circuit topology used. In an SCBBR, the amount of power switched by the DC-to-DC converter is only the amount needed to make up the difference between the input and output bus voltage. The remaining majority of the power passes through the converter without being switched. The weight and power loss of a DC-to-DC converter are determined primarily by the amount of power processed. In the SCBBR, the unswitched majority of the power is passed through with very little power loss, and little if any increase in the sizes of the converter components is needed to enable the components to handle the unswitched power. As a result, the power-conversion efficiency of the regulator can be very high, as shown in the example of Figure 1. A basic SCBBR includes a DC-to-DC converter (see Figure 2). The switches and primary winding of a transformer in the converter is connected across the input bus, while the secondary winding and switches are connected in series with the output bus, so that the output voltage is the sum of the input voltage and the secondary voltage of the converter. In the breadboard SCBBR, the input voltage applied to the primary winding is switched by use of metal oxide/semiconductor field-effect transistors (MOSFETs) in a full bridge circuit; the secondary winding is center-tapped, with two MOSFET switches and diode rectifiers connected in opposed series in each leg. The sets of opposed switches and rectifiers are what enable operation in either a boost or a buck mode. In the boost mode, input voltage and current, and the output voltage and current are all positive; that is, the secondary voltage is added to the input voltage and the net output voltage can be regulated at a value equal or greater than the input voltage. In the buck mode, input voltage is still positive and the current still flows in the same direction in the secondary, but the switches are controlled such that some power flows from the secondary to the primary. The voltage across the secondary and the current into the primary are reversed. The result is that the output voltage is lower than the input voltage, and some power is recirculated from the converter secondary back to the input. Quantitatively, the advantage of an SCBBR is a direct function of the regulation range required. If, for example, a regulation range of 20 percent is required for a 500-W supply, th it suffices to design the DC-to-DC converter in the SCBBR for a power rating of only 100 W. The switching loss and size are much smaller than those of a conventional regulator that must be rated for switching of all 500 W. The reduction in size and the increase in efficiency are not directly proportional to switched-power ratio of 5:1 because the additional switches contribute some conduction loss and the input and output filters must be larger than those typically required for a 100-W converter. Nevertheless, the power loss and the size can be much smaller than those of a 500-W converter.

Birchenough, Arthur G.↗

Load Shed Recovery With Transmission Switching and Intentional Islanding Methods After (N-2) Line Contingencies

Changing power system configuration may result in load shed recovery (LSR) because topology change can provide power flow control in meshed network. Some topologies may favor generation redispatch as compared to others and can eliminate line congestion which leads to LSR. One of the known methods for topology change is called transmission switching (TS) and research conducted in the past showed that TS is an effective means of mitigating load shedding. Another method of topology control is intentional islanding (IIS). In this manuscript, we explore IIS as a potential solution for LSR. IIS based on generator coherency has been presented in literature for mitigating cascading failures. However, IIS has not been explored solely as a LSR mechanism. In this paper, we compare the LSR based on IIS with well known LSR algorithm based on TS. The comparison is performed for IEEE 39-bus system and IEEE 118- bus system. The results show that IIS has a potential to perform better than TS in terms of computational efficiency and LSR.

42 ENGINEERING↗

Liquid Nitrogen Temperature Operation of a Switching Power Converter

The performance of a 42/28 V, 175 W, 50 kHz pulse-width modulated buck dc/dc switching power converter at liquid nitrogen temperature (LNT) is compared with room temperature operation. The power circuit as well as the control circuit of the converter, designed with commercially available components, were operated at LNT and resulted in a slight improvement in converter efficiency. The improvement in power MOSFET operation was offset by deteriorating performance of the output diode rectifier at LNT. Performance of the converter could be further improved at low temperatures by using only power MOSFET's as switches. The use of a resonant topology will further improve the circuit performance by reducing the switching noise and loss.

Ray, Biswajit↗

Squaring the fermion: The threefold way and the fate of zero modes

In this work, we investigate topological properties and classification of mean-field theories of stable bosonic systems. Of the three standard classifying symmetries, only time reversal represents a real symmetry of the many-boson system, while the other two, particle-hole and chiral, are simply constraints that manifest as symmetries of the effective single-particle problem. For gapped systems in arbitrary space dimension, we establish three fundamental no-go theorems that prove the absence of parity switches, symmetry-protected-topological quantum phases, and localized bosonic zero modes under open boundary conditions. We then introduce a squaring, kernel-preserving map connecting noninteracting Hermitian theories of fermions and stable boson systems, which serves as a playground to reveal the role of topology in bosonic phases and their localized midgap boundary modes. Finally, we determine the symmetry classes inherited from the fermionic tenfold-way classification, unveiling an elegant threefold-way topological classification of noninteracting bosons. We illustrate our main findings in one- and two-dimensional bosonic lattice and field-theory models.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Power control electronics for cryogenic instrumentation

In order to achieve a high-efficiency high-density cryogenic instrumentation system, the power processing electronics should be placed in the cold environment along with the sensors and signal-processing electronics. The typical instrumentation system requires low voltage dc usually obtained from processing line frequency ac power. Switch-mode power conversion topologies such as forward, flyback, push-pull, and half-bridge are used for high-efficiency power processing using pulse-width modulation (PWM) or resonant control. This paper presents several PWM and multiresonant power control circuits, implemented using commercially available CMOS and BiCMOS integrated circuits, and their performance at liquid-nitrogen temperature (77 K) as compared to their room temperature (300 K) performance. The operation of integrated circuits at cryogenic temperatures results in an improved performance in terms of increased speed, reduced latch-up susceptibility, reduced leakage current, and reduced thermal noise. However, the switching noise increased at 77 K compared to 300 K. The power control circuits tested in the laboratory did successfully restart at 77 K.

Ray, Biswajit↗

Dynamic control of quantum phases in two-dimensional materials via Floquet engineering

The dynamical engineering of quantum states through periodic optical driving, known as Floquet engineering, has emerged as a powerful frontier in condensed matter physics, offering a pathway to realize material properties inaccessible in static equilibrium. This review provides a comprehensive overview of recent theoretical and experimental advances in the optical manipulation of two-dimensional (2D) quantum materials. We begin by systematically reviewing the evolution of the field from its pioneering applications in graphene and twisted moiré superlattices, highlighting the experimental realization of the light-induced anomalous Hall effect (AHE) to the complex spin-valley physics in transition metal dichalcogenides (TMDs). Furthermore, we briefly examine recent advances in 2D magnetic materials, demonstrating how optical driving can actively compete with intrinsic magnetism to dynamically switch magnetic orders and topological invariants. Moreover, we discuss the emerging frontiers of multi-frequency driving, quantum optimal control theory (QOCT), and ultrafast lightwave electronics. We highlight how tailored waveforms, such as bicircular light fields, and sub-cycle attosecond control can selectively break spatial symmetries to generate novel nonlinear photocurrents, mitigate dissipation, and extend the boundaries of quantum control well beyond the perturbative steady-state regime. Finally, we summarize the key experimental challenges for Floquet engineering, including effects such as heating and scattering, which limit coherent quantum control.

Wang, Wenpeng [Northeastern University, Shenyang, ↗

Proximity-induced anisotropic magnetoresistance in magnetized topological insulators.

Topological insulators (TIs) host spin-momentum locked surface states that are inherently susceptible to magnetic proximity modulations, making them promising for nano-electronic, spintronic, and quantum computing applications. While much effort has been devoted to studying (quantum) anomalous Hall effects in magnetic magnetically doped TIs, the inherent magnetoresistance (MR) properties in magnetic proximity-coupled surface states remain largely unexplored. Here, we directly exfoliate Bi 2 Se 3 TI flakes onto a magnetic insulator, yttrium iron garnet, and measure the MR at various temperatures. We experimentally observe an anisotropic magnetoresistance that is consistent with a magnetized surface state. Our results indicate that the TI has magnetic anisotropy out of the sample plane, which opens an energy gap between the surface states. Additionally, by applying a magnetic field along any in-plane orientation, the magnetization of the TI rotates toward the plane and the gap closes. Consequently, we observe a large (similar to 6.5%) MR signal that is attributed to an interplay between coherent rotation of magnetization within a topological insulator and abrupt switching of magnetization in the underlying magnetic insulator.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Probing exchange bias at the surface of a doped ferrimagnetic insulator

With the realization of stress-induced perpendicular magnetic anisotropy, efficient spin-orbit torque switching, and room temperature topological Hall effect, interest in rare earth iron garnets has been revived in recent years for their potential in spintronic applications. In this study, we investigate the magnetic properties of micrometer-thick Bi and Ga substituted thulium iron garnets (BiGa:TmIG) grown by the liquid-phase epitaxy method. Above the magnetization compensation (MC) temperature, anomalous triple hysteresis is observed in BiGa:TmIG/Pt heterostructures by anomalous Hall effect measurements. X-ray magnetic circular dichroism and energy dispersive spectroscopy measurements reveal its origin as an internal exchange bias (EB) effect arising from inhomogeneities localized at the surface of the film. Possibly depending on the difference in thickness and defect realization of the EB layer, two types of magnetization reversal mechanisms, namely, the Stoner-Wohlfarth type and the reversible domain-wall motion type, are observed. Furthermore, our results show that rich meta-magnetic phases exist in garnets close toMC, which can be robustly tuned by chemical composition engineering and conveniently probed by electrical transport measurements.

36 MATERIALS SCIENCE↗