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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2019

The Unrealized Potential of Superhydrophobic Substrates in Advanced Life Support Systems

Nearly all water processing equipment aboard spacecraft is to a large extent controlled by capillary forces arising from substrate wetting conditions. Superhydrophobic wetting conditions provide an essentially passive means to keep water away from certain substrates providing a level of no-moving-parts phase separation and control. This work presents a host of non-wetting aqueous microgravity capillary fluidics phenomena arising from interactions with easily fabricated superhydrophobic substrates. The value of such phenomena for potential life support applications aboard spacecraft is clear, especially for substrate properties that are thermally robust, corrosion resistant, and self-cleaning for both long- and short term applications. Large length scale low-g demonstrations of the phenomena are provided in HD video format for the extensive drop tower tests conducted. The broader crosscutting impacts to numerous fluids processing operations for life support are discussed. Current practical applications addressed in light of superhydrophobicity include urine-processing, water recovery, fire safety, and others.

Superhydrophoic↗
NASA NTRS1973

Investigation of substrate-mounted thin-film meteoroid sensors for use in large area impact experiments

Two types of sensor designs were investigated: (1)a polysulfone dielectric film with vapor-deposited aluminum and gold sensor plates, bonded to a relatively thick aluminum substrate, and (2) an aluminum oxide (A1203) dielectric layer prepared on an aluminum substrate by anodization, with a layer of vapor-deposited aluminum providing one sensor plate and the substrate serving as the other plate. In the first design, specimens were prepared which indicate the state of the art for application of this type of sensor for elements of a meteoroid detection system having an area as large as 10 sq M. Techniques were investigated for casting large-area polysulfone films on the surface of water and for transferring the films from the water. Methods of preparing sensors by layering of films, the deposition of capacitor plates, and sensor film-to-substrate bonding, as well as techniques for making electrical connections to the capacitor plates, were studied.

Carollo, S. F.↗
NASA NTRS1978

Lubrication and failure mechanisms of molybdenum disulfide films. 2: Effect of substrate roughness

An optical microscope was used to study the lubrication and failure mechanisms of rubbed MoS2 films applied to three substrate surface finishes; polished, sanded, and sandblasted as a function of sliding distance. The lubrication mechanism was the plastic flow of thin films of MoS2 between flat plateaus on the rider and on the metallic substrate. If the substrate was rough, flat plateaus were created during run-in and the MoS2 flowed across them. Wear life was extended by increasing surface roughness since valleys in the roughened substrate served as reservoirs for MoS2 and as deposit sites for wear debris. In moist air the failure mechanism was the transformation of metallic colored MoS2 films to a black, powdery material that was found by X-ray diffraction to be alpha iron, MoO3, and possibly FeMoO3. In dry argon the failure mechanism was the gradual depletion of MoS2 from the contact region by transverse flow, and the wear debris on the track at failure was alpha iron, residual MoS2, and possibly FeS.

Fusaro, R. L.↗
NASA NTRS1980

Effect of Substrate Surface Finish on the Lubrication and Failure Mechanisms of Molybdenum Disulfide Films

An optical microscope was used to study the lubrication and failure mechanisms of rubbed (burnished) MoS2 films applied to three substrate surface finishes - polished, sanded, and sandblasted - as a function of sliding distance. The lubrication mechanism was the plastic flow of thin films of MoS2 between flat plateaus on the rider and on the metallic substrate. If the substrates were rough, flat plateaus were created during 'run in' and the MoS2 flowed across them. Wear life was extended by increasing surface roughness since valleys in the roughened substrate served as reservoirs for MoS2 and a deposit site for wear debris. In moist air, the failure mechanism was the transformation of metallic colored MoS2 films to a black, powdery material that was found by X ray diffraction to consist primarily of alpha iron and MoO3 powders. In dry argon, the failure mechanism was the gradual depletion of the MoS2 film from the contact region by transverse flow. Analysis of the wear debris on the wear track at failure showed it consisted mainly of alpha iron and some residual MoS2. No molybdenum oxides were found.

Fusaro, R. L.↗
NASA NTRS1981

Effect of substrate surface finish on the lubrication and failure mechanisms of molybdenum disulfide films

An optical microscope was used to study the lubrication and failure mechanisms of rubbed (burnished) MoS2 films applied to three substrate surface finishes - polished, sanded, and sandblasted - as a function of sliding distance. The lubrication mechanism was the plastic flow of thin films of MoS2 between flat plateaus on the rider and on the metallic substrate. If the substrate was rough, flat plateaus were created during 'run-in' and the MoS2 flowed across them. Wear life was extended by increasing surface roughness since valleys in the roughened substrate served as reservoirs for MoS2 and a deposit site for wear debris. In moist air, the failure mechanism was the transformation of metallic-colored MoS2 films to a black, powdery material that was found by X-ray diffraction to consist primarily of alpha-iron and MoO3 powders. In dry argon, the failure mechanism was the gradual depletion of the MoS2 film from the contact region by transverse flow. Analysis of the wear debris on the wear track at failure showed it consisted mainly of alpha-iron and some residual MoS2. No molybdenum oxides were found.

Fusaro, R. L.↗
NASA NTRS1987

Effects of substrate misorientation and background impurities on electron transport in molecular-beam-epitaxial grown GaAs/AlGaAs modulation-doped quantum-well structures

The effects of substrate misorientation off the (001) plane and of background impurities on electron transport in MBE-grown GaAs/AlGaAs modulation-doped superlattice-buffered quantum-well structures were investigated. Low-field transport data were obtained on GaAs/AlGaAs structures grown on substrates oriented 0, 2, 4, and 6.5 deg off the (001) plane towards either (111)A or (111)B. It is shown that the low-field two-dimensional electron gas (2DEG) mobility is a function of the angle and direction of the substrate orientation, and that the 2DEG mobility is a function of the direction of the applied electric field in the GaAs quantum well. The anisotropy in the 2DEG mobility is also a function of the tilt angle and tilt azimuth direction of the substrate from the (001) plane. In addition, it is shown that the amount of interface scattering from the inverted interface is a sensitive function of the amount of background impurities in the MBE machine.

Radulescu, D. C.↗
NASA NTRS1987

Model of hot-film sensor with substrate

A detailed model is constructed to investigate parameters influencing a hot-film anemometer system used to study cross-flow phenomena on swept wings. This anemometer is designed to detect vortices set up by cross-flow. The nature of the vortices is not well known, and a well-verified instrumentation model is considered essential to allow accurate interpretation of experimental results. Previous investigators have indicated that heat conduction to the film's substrate is significant. Two variations on the inclusion of substrate effects in the model are discussed. In the first, the substrate is assumed to have a constant temperature throughput: in the second more elaborate model, the temperature of the substrate is allowed to vary. This variation is related to the convective heat removal at the substrate/gas interface.

Mcree, Griffith J.↗
NASA NTRS1988

High Tc screen-printed YBa2Cu3O(7-x) films - Effect of the substrate material

Thick films of YBa2Cu3O(7-x) have been deposited on highly polished alumina, magnesia spinel, nickel aluminum titanate (Ni-Al-Ti), and barium tetratitanate (Ba-Ti) substrates by the screen printing technique. Properties of the films were found to be highly sensitive to the choice of the substrate material. The film on Ba-Ti turned green after firing, due to a reaction with the substrate and were insulating. A film on Ni-Al-Ti had a Tc (onset) of about 95 K and lost 90 percent of its resistance by about 75 K. However, even at 4 K it was not fully superconducting, possibly due to a reaction between the film and the substrate and interdiffusion of the reaction products. The film on alumina had Tc (onset) of about 96 K, Tc (zero) of about 66 K, and Delta Tc of about 10 K. The best film was obtained on spinel and had Tc (onset) of about 94 K, zero resistance at 81 K, and a transition width of about 7 K.

Bansal, Narottam P.↗
NASA NTRS1989

Sequentially evaporated thin Y-Ba-Co-O superconducting films on microwave substrates

The development of high T sub c superconducting thin films on various microwave substrates is of major interest in space electronic systems. Thin films of YBa2Cu3O(7-Delta) were formed on SrTiO3, MgO, ZrO2 coated Al2O3, and LaAlO3 substrates by multi-layer sequential evaporation and subsequent annealing in oxygen. The technique allows controlled deposition of Cu, BaF2 and Y layers, as well as the ZrO buffer layers, to achieve reproducibility for microwave circuit fabrication. The three layer structure of Cu/BaF2/Y is repeated a minimum of four times. The films were annealed in an ambient of oxygen bubbled through water at temperatures between 850 C and 900 C followed by slow cooling (-2 C/minute) to 450 C, a low temperature anneal, and slow cooling to room temperature. Annealing times ranged from 15 minutes to 5 hrs. at high temperature and 0 to 6 hr. at 450 C. Silver contacts for four probe electrical measurements were formed by evaporation followed with an anneal at 500 C. The films were characterized by resistance-temperature measurements, energy dispersive X-ray spectroscopy, X-ray diffraction, and scanning electron microscopy. Critical transition temperatures ranged from 30 K to 87 K as a function of the substrate, composition of the film, thicknesses of the layers, and annealing conditions. Microwave ring resonator circuits were also patterned on these MgO and LaAlO3 substrates.

Valco, G. J.↗
NASA NTRS1989

Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy

The preparation of hydrogen-terminated silicon surfaces for use as starting substrates for low-temperature MBE growth is examined in detail. The procedure involves the ex situ removal under nitrogen of residual oxide from a silicon substrate using a spin-clean with HF in ethanol, followed by the in situ low-temperature desorption (150 C) of physisorbed etch residues. The critical steps and the chemical basis for these steps are examined using X-ray photoelectron spectroscopy. Impurity residues at the epilayer-substrate interface following subsequent homoepitaxial growth are studied using AES, SIMS and TEM. Finally, scanning tunneling microscopy is used to examine the effect of cleaning methods on substrate morphology.

Grunthaner, P. J.↗
NASA NTRS1990

Splat-quench solidification of freely falling liquid-metal drops by impact on a planar substrate

Results are presented of a study of the splat-quench solidification of small, freely falling liquid drops of the alloy Nitronic 40W, which were allowed to impact on a solid, planar, horizontal substrate. The principal variable was the substrate material, with substrates of copper, alumina and fused quartz being used. The shapes of the solidified splats were correlated with a simplified model for the energetics of the splatting process and with the thermal conductivity of the substrate. The measured results are qualitatively in agreement with theoretical predictions, and suggestions are offered for a more comprehensive model of splat-quench solidification. A relationship between sessile droplet diameter and parent wire diameter is also presented and discussed.

Collings, E. W.↗
NASA NTRS1992

Milstar's flexible-substrate solar array: Lessons learned

The Flexible Substrate Solar Array (FSSA) is an evolutionary development of the lightweight, flexible substrate design pioneered during the seventies. Many of the features of the design are related to the Solar Array Flight Experiment (SAFE), flown on STS-41D in 1984. FSSA development has created a substantial technology base for future flexible substrate solar arrays such as the array for the Space Station Freedom. Lessons learned during the development of the FSSA can and should be applied to the Freedom array and other future flexible substrate designs.

Gibb, John↗
NASA NTRS1990

MILSTAR's flexible substrate solar array: Lessons learned, addendum

MILSTAR's Flexible Substrate Solar Array (FSSA) is an evolutionary development of the lightweight, flexible substrate design pioneered at Lockheed during the seventies. Many of the features of the design are related to the Solar Array Flight Experiment (SAFE), flown on STS-41D in 1984. FSSA development has created a substantial technology base for future flexible substrate solar arrays such as the array for the Space Station Freedom. Lessons learned during the development of the FSSA can and should be applied to the Freedom array and other future flexible substrate designs.

Gibb, John↗
NASA NTRS1993

Investigation of ZnSe-coated silicon substrates for GaAs solar cells

Studies are being carried out to determine the feasibility of using ZnSe as a buffer layer for GaAs solar cells grown on silicon. This study was motivated by reports in the literature indicating ZnSe films had been grown by metallorganic chemical vapor deposition (MOCVD) onto silicon with EPD values of 2 x 10(exp 5) cm(sup -2), even though the lattice mismatch between silicon and ZnSe is 4.16 percent. These results combined with the fact that ZnSe and GaAs are lattice matched to within 0.24 percent suggest that the prospects for growing high efficiency GaAs solar cells onto ZnSe-coated silicon are very good. Work to date has emphasized development of procedures for MOCVD growth of (100) ZnSe onto (100) silicon wafers, and subsequent growth of GaAs films on ZnSe/Si substrates. In order to grow high quality single crystal GaAs with a (100) orientation, which is desirable for solar cells, one must grow single crystal (100) ZnSe onto silicon substrates. A process for growth of (100) ZnSe was developed involving a two-step growth procedure at 450 C. Single crystal, (100) GaAs films were grown onto the (100) ZnSe/Si substrates at 610 C that are adherent and specular. Minority carrier diffusion lengths for the GaAs films grown on ZnSe/Si substrates were determined from photoresponse properties of Al/GaAs Schottky barriers. Diffusion lengths for n-type GaAs films are currently on the order of 0.3 microns compared to 2.0 microns for films grown simultaneously by homoepitaxy.

Huber, Daniel A.↗
NASA NTRS1995

The growth of low band-gap InAs on (111)B GaAs substrates

The use of low band-gap materials is of interest for a number of photovoltaic and optoelectronic applications, such as bottom cells of optimized multijunction solar cell designs, long wavelength light sources, detectors, and thermophotovoltaics. However, low band-gap materials are generally mismatched with respect to lattice constant, thermal expansion coefficient, and chemical bonding to the most appropriate commercially available substrates (Si, Ge, and GaAs). For the specific case of III-V semiconductor heteroepitaxy, one must contend with the strain induced by both lattice constant mismatch at the growth temperature and differences in the rates of mechanical deformation during the cool down cycle. Several experimental techniques have been developed to minimize the impact of these phenomena (i.e., compositional grading, strained layer superlattices, and high-temperature annealing). However, in highly strained systems such as InAs-on-GaAs, three-dimensional island formation and large defect densities (greater than or equal to 10(exp 8)/ cm(exp -2)) tend to limit their applicability. In these particular cases, the surface morphology and defect density must be controlled during the initial stages of nucleation and growth. At the last SPRAT conference, we reported on a study of the evolution of InAs islands on (100) and (111)B GaAs substrates. Growth on the (111)B orientation exhibits a number of advantageous properties as compared to the (100) during these early stages of strained-layer epitaxy. In accordance with a developing model of nucleation and growth, we have deposited thin (60 A - 2500 A), fully relaxed InAs films on (111)B GaAs substrates. Although thicker InAs films are subject to the formation of twin defects common to epitaxy on the (111)B orientation, appropriate control of the growth parameters can greatly minimize their density. Using this knowledge base, InAs films up to 2 microns in thickness with improved morphology and structural quality have been grown on (111)B GaAs substrates, thereby enabling the measurement of electronic and optical properties.

Welser, R. E.↗
NASA NTRS1999

Polarity Effects of Substrate Surface in Epitaxial ZnO Film Growth

Epitaxial ZnO films were grown on the two polar surfaces (0-face and Zn-face) of (0001) ZnO single crystal substrates using off-axis magnetron sputtering deposition. As a comparison, films are also deposited on the (000 I) Al203 substrates. It is found that the two polar surfaces have different photoluminescence (PL) spectrum, surface structure and morphology, which are strongly inference the epitaxial film growth. The morphology and structure of epitaxial films on the ZnO substrates are different from the film on the Al203 substrates. An interesting result shows that high temperature annealing of ZnO single crystals will improve the surface structure on the O-face surface rather than the opposite Surface. The measurements of PL, low-angle incident x-ray diffraction, and atomic force microscopy of ZnO films indicate that the O-terminated surface is better for ZnO epitaxial film growth using reactive sputtering deposition.

Zhu, Shen↗
NASA NTRS2000

Zeoponic Plant Growth Substrate Development at the Johnson Space Center and Possible Use at a Martian Outpost

The National Aeronautics and Space Administration (NASA) Johnson Space Center (JSC) is developing a substrate, termed zeoponics, that will slowly release all of the essential nutrients into solution for plant growth experiments in advanced life support system testbeds. This substrate is also potentially useful in the near future on the Space Shuttle and International Space Station and could eventually be used at an outpost on Mars. Chemical analyses of the Martian soil by the Viking and Mars Pathfinder missions have indicated that several of the elements required for plant growth are available in the soil. It may be possible to use the martian soil as the bulk substrate for growing food crops, while using smaller amounts of zeoponic substrate as an amendment to rectify any nutrient deficiencies.

Gruener, John E.↗
NASA NTRS1998

Substrate Effects on Electronic Properties of Atomic Chains

Atomic chains, precise structures of adatoms created on an atomically regulated surface, are candidates for constituent elements in future electronics. It was predicted that Si chains were metallic and Mg chains were semiconducting, and a doping method was also discussed. The substrate was assumed to work as a non-interacting template holding the adatoms. However, this scheme requires a low-temperature environment so that the adatoms will not displace from their ideal positions due to unwanted thermal agitation. For better structural stability, we may seek a scheme to allow the adatoms to form chemical bonding with the substrate atoms and secure their positions. The chemical bonding has two major effects on the chain electronic properties. First, only the remaining s and p orbitals in an adatom not used for the chemical bonding can decide chain band structures, rather than the full set of orbitals previously assumed. Second, because of a possible HOMO energy difference between adatom and substrate atom, semiconducting chains are unintentionally doped. These effects are studied with a self-consistent tight-binding method with universal parameters. With one adatom per unit cell, adatom chains are semiconducting: (1) if adatoms are of group III and form one chemical bond per adatom, or (2) if adatoms are of group IV and form two chemical bonds. 'Me previous result [I I of realizing semiconducting chains by group II adatoms without chemical bonds is consistent with this picture. When the HOMO energy in an adatom is shallower than that in a substrate atom, the entire chain is positively polarized, unintentionally achieving p-type doping. When deeper, the chain is negatively charged, achieving n-type doping.

Yamada, Toshishige↗