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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Micromachined peristaltic pump

A micromachined pump including a channel formed in a semiconductor substrate by conventional processes such as chemical etching. A number of insulating barriers are established in the substrate parallel to one another and transverse to the channel. The barriers separate a series of electrically conductive strips. An overlying flexible conductive membrane is applied over the channel and conductive strips with an insulating layer separating the conductive strips from the conductive membrane. Application of a sequential voltage to the series of strips pulls the membrane into the channel portion of each successive strip to achieve a pumping action. A particularly desirable arrangement employs a micromachined push-pull dual channel cavity employing two substrates with a single membrane sandwiched between them.

Hartley, Frank T.↗
NASA NTRS1978

High resolution masks for ion milling pores through substrates of biological interest

The feasibility was investigated of electrochemically oxidizing vapor deposited aluminum coatings to produce porous aluminum oxide coatings with submicron pore diameters and with straight channels normal to the substrate surface. Porous aluminum oxide coatings were produced from vapor deposited aluminum coatings on thin stainless steel (304), copper, Teflon (FEP) and Kapton substrates and also on pure aluminum substrates. Scanning electron microscope examination indicated that porous oxide coatings can be produced with straight channels, appropriate pore diameters and none or minimal intervening residual aluminum. The oxide coatings on the copper and Kapton substrates had the straightest channels and in general were superior to those fabricated on the other substrate materials. For oxide coatings fabricated at 600 V and 300 V, pore diameters were 0.4-0.6, and 0.3 micron with center-to-center spacing of 0.7-0.8, and 0.4 micron, respectively. Estimated direct labor and materials costs to prepare an oxide mask is anticipated to be about $4-$6 per square foot.

Donovan, S. S.↗
DOE OSTI2021

Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics

Provided are implantable, injectable and/or surface mounted biomedical devices and related methods for interfacing with a target tissue. The devices have a substrate, one or more microfluidic channels embedded in or supported by the substrate and a fluid actuator in operational communication with one or more reservoirs and responsive to a wireless control signal. The components of the device are specially configured and packaged to be ultra-thin and mechanically compliant. In some embodiments, the devices are self-powered and fully implantable. The devices can be shaped to provide injection in a minimally invasive manner, thereby avoiding unnecessary tissue damage and providing a platform for long-term implantation for interfacing with biological tissue.

Rogers, John A.↗
DOE OSTI2021

Heat activates the AAA+ HslUV protease by melting an axial autoinhibitory plug

At low temperatures, protein degradation by the AAA+ HslUV protease is very slow. New crystal structures reveal that residues in the intermediate domain of the HslU 6 unfoldase can plug its axial channel, blocking productive substrate binding and subsequent unfolding, translocation, and degradation by the HslV 12 peptidase. Biochemical experiments with wild-type and mutant enzymes support a model in which heat-induced melting of this autoinhibitory plug activates HslUV proteolysis.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS2004

Microsensor Technologies for Plant Growth System Monitoring

This document covered the following: a) demonstration of feasibility of microsensor for tube and particulate growth systems; b) Dissolved oxygen; c)Wetness; d) Flexible microfluidic substrate with microfluidic channels and microsensor arrays; e)Dynamic root zone control/monitoring in microgravity; f)Rapid prototyping of phytoremediation; and g) A new tool for root physiology and pathology.

Kim, Chang-Soo↗
DOE OSTI2023

Refinery gas processing method

A process for hydrogen recovery from refinery gas system comprising supplying the refinery gas to an inlet manifold fluidly coupled to a conditioning stage, the conditioning stage comprising a reactor having a reforming catalyst deposited on an ultra-short-channel-length metal substrate; supplying oxidant to the conditioning stage via the inlet manifold; supplying steam from a steam generator to the conditioning stage via the inlet , manifold; reacting the refinery gas in the conditioning stage; and discharging a product through a discharge outlet fluidly coupled to the conditioning stage, the discharge outlet configured to flow the product for use by a downstream reformer. The process allows to either increase the H2 production rate or lower the firing rate while maintaining a constant H2 production rate for the downstream steam reformer, independent of the feed compositional variability of the refinery or still gas.

Vilekar, Saurabh↗
DOE OSTI2023

Evolutionary diversity of proton and water channels on the oxidizing side of photosystem II and their relevance to function

One of the reasons for the high efficiency and selectivity of biological catalysts arise from their ability to control the pathways of substrates and products using protein channels, and by modulating the transport in the channels using the interaction with the protein residues and the water/hydrogen-bonding network. Here, this process is clearly demonstrated in Photosystem II (PS II), where its light-driven water oxidation reaction catalyzed by the Mn 4 CaO 5 cluster occurs deep inside the protein complex and thus requires the transport of two water molecules to and four protons from the metal center to the bulk water. Based on the recent advances in structural studies of PS II from X-ray crystallography and cryo-electron microscopy, in this review we compare the channels that have been proposed to facilitate this mass transport in cyanobacteria, red and green algae, diatoms, and higher plants. The three major channels (O1, O4, and Cl1 channels) are present in all species investigated; however, some differences exist in the reported structures that arise from the different composition and arrangement of membrane extrinsic subunits between the species. Among the three channels, the Cl1 channel, including the proton gate, is the most conserved among all photosynthetic species. We also found at least one branch for the O1 channel in all organisms, extending all the way from Ca/O1 via the ‘water wheel’ to the lumen. However, the extending path after the water wheel varies between most species. The O4 channel is, like the Cl1 channel, highly conserved among all species while having different orientations at the end of the path near the bulk. The comparison suggests that the previously proposed functionality of the channels in T. vestitus (Ibrahim et al., Proc Natl Acad Sci USA 117:12624–12635, 2020; Hussein et al., Nat Commun 12:6531, 2021) is conserved through the species, i.e. the O1-like channel is used for substrate water intake, and the tighter Cl1 and O4 channels for proton release. The comparison does not eliminate the potential role of O4 channel as a water intake channel. However, the highly ordered hydrogen-bonded water wire connected to the Mn 4 CaO 5 cluster via the O4 may strongly suggest that it functions in proton release, especially during the S 0 → S 1 transition (Saito et al., Nat Commun 6:8488, 2015; Kern et al., Nature 563:421–425, 2018; Ibrahim et al., Proc Natl Acad Sci USA 117:12624–12635, 2020; Sakashita et al., Phys Chem Chem Phys 22:15831–15841, 2020; Hussein et al., Nat Commun 12:6531, 2021).

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS1991

Epitaxial yttria-stabilized zirconia on (1 -1 0 2) sapphire for YBa2Cu3O(7-delta) thin films

Epitaxial yttria-stabilized zirconia (YSZ) films were deposited on (1 -1 0 2) sapphire by pulsed laser deposition. The films are formed in a cubic phase with the a axis normal to the substrate surface. Ion beam channeling measurements show that the YSZ films are highly crystalline with a channeling minimum yield of 8 percent. The epitaxial relationship between the film and substrate is further confirmed by a cross-section TEM study. Epitaxial YBa2Cu3O(7-delta) thin films deposited on YSZ/sapphire have Tc and Jc of up to 89 K and 10 to the 6th A/sq cm at 77 K, respectively.

Wu, X. D.↗
DOE OSTI2021

Lattice microfluidics

An engineered unit cell is disclosed for flowing a fluid therethrough in three dimensions. The unit cell may have a substrate with a plurality of flow channels around and between struts formed within the substrate. The struts may each be formed with a desired shape and orientation within the substrate to achieve a desired degree of fluid flow through the flow channels, in each of one of three dimensions, through the unit cell.

Deotte, Joshua R.↗
DOE OSTI2023

Enhancing the electron mobility in Si-doped (010) β-Ga 2 O 3 films with low-temperature buffer layers

We demonstrate a new substrate cleaning and buffer growth scheme in β-Ga 2 O 3 epitaxial thin films using metal–organic vapor phase epitaxy (MOVPE). For the channel structure, a low-temperature (LT, 600 °C) un-doped Ga 2 O 3 buffer was grown, followed by a transition layer to a high-temperature (HT, 810 °C) Si-doped Ga 2 O 3 channel layers without growth interruption. The (010) Ga 2 O 3 Fe-doped substrate cleaning uses solvent cleaning, followed by additional hydrofluoric acid (49% in water) treatment for 30 min before the epilayer growth. This step is shown to compensate the parasitic Si channel at the epilayer–substrate interface that originates from the substrate polishing process or contamination from the ambient. From secondary ion mass spectroscopy (SIMS) analysis, the Si peak atomic density at the substrate interface is found to be several times lower than the Fe atomic density in the substrate—indicating full compensation. The elimination of the parasitic electron channel at the epi–substrate interface was also verified by electrical (capacitance–voltage profiling) measurements. In the LT-grown (600 °C) buffer layers, it is seen that the Fe forward decay tail from the substrate is very sharp, with a decay rate of ∼9 nm/dec. X-ray off-axis rocking curve ω-scans show very narrow full width at half maximum (FWHM) values, similar to the as-received substrates. These channels show record high electron mobility in the range of 196–85 cm 2 /V⋅s in unintentionally doped and Si-doped films in the doping range of 2 × 10 16 –1 × 10 20 cm −3 . Si delta-doped channels were also grown utilizing this substrate cleaning and the hybrid LT buffers. Record high electron Hall mobility of 110 cm 2 /V⋅s was measured for sheet charge density of 9.2 × 10 12 cm −2 . This substrate cleaning, combined with the LT buffer scheme, shows the potential of designing Si-doped β-Ga 2 O 3 channels with exceptional transport properties for high-performance Ga 2 O 3 -based electron devices.

Bhattacharyya, Arkka↗
NASA NTRS1979

A study of trends and techniques for space base electronics

The use of dry processing and alternate dielectrics for processing wafers is reported. A two dimensional modeling program was written for the simulation of short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide-silicon interface. In solving current continuity equation, the program does not converge. However, solving the two dimensional Poisson equation for the potential distribution was achieved. The status of other 2D MOSFET simulation programs are summarized.

Trotter, J. D.↗
NASA NTRS1979

Trends and Techniques for Space Base Electronics

Simulations of various phosphorus and boron diffusions in SOS were completed and a sputtering system, furnaces, and photolithography related equipment were set up. Double layer metal experiments initially utilized wet chemistry techniques. By incorporating ultrasonic etching of the vias, premetal cleaning a modified buffered HF, phosphorus doped vapox, and extended sintering, yields of 98% were obtained using the standard test pattern. A two dimensional modeling program was written for simulating short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide silicon interface. Although the program is incomplete, the two dimensional Poisson equation for the potential distribution was achieved. The status of other Z-D MOSFET simulation programs is summarized.

Trotter, J. D.↗
NASA NTRS1990

Low-temperature microwave characteristics of pseudomorphic In(x)Ga(1-x) As/In(0.52)Al(0.48)As modulation-doped field-effect transistors

Low-temperature microwave measurements of both lattice-matched and pseudomorphic In(x)Ga(1-x)As/In(0.48)As (x = 0.53, 0.60, and 0.70) channel MODFETs on InP substrates were carried out in a cryogenic measurement system. The measurements were done in the temperature range of 77 to 300 K and in the frequency range of 0.5 to 11.0 GHz at different bias conditions. The cutoff frequency (fT) for the In(x)Ga(1-x)As/In(0.52)Al(0.48)As MODFETs improved from 22 to 29 GHz, 29 to 38 GHz, and 39 to 51 GHz, for x = 0.53, 0.60, and 0.70, respectively, as the temperature was lowered from 300 to 77 K, which is approximately a 31 percent increase at each composition. No degradations were observed in device performance. These results indicate an excellent potential of the pseudomorphic devices at low temperatures.

Lai, R.↗
NASA NTRS2005

Performance Characterization of a Prototype Ultra-Short Channel Monolith Catalytic Reactor for Air Quality Control Applications

Contaminated air and process gases, whether in a crewed spacecraft cabin atmosphere, the working volume of a microgravity science or ground-based laboratory experiment facility, or the exhaust from an automobile, are pervasive problems that ultimately effect human health, performance, and well-being. The need for highly-effective, economical decontamination processes spans a wide range of terrestrial and space flight applications. Adsorption processes are used widely for process gas decontamination. Most industrial packed bed adsorption processes use activated carbon because it is cheap and highly effective. Once saturated, however, the adsorbent is a concentrated source of contaminants. Industrial applications either dump or regenerate the activated carbon. Regeneration may be accomplished in-situ or at an off-site location. In either case, concentrated contaminated waste streams must be handled appropriately to minimize environmental impact. As economic and regulatory forces drive toward minimizing waste and environmental impact, thermal catalytic oxidation is becoming more attractive. Through novel reactor and catalyst design, more complete contaminant destruction and greater resistance to poisoning can achieved leading to less waste handling, process down-time, and maintenance. Performance of a prototype thermal catalytic reactor, based on ultra-short channel monolith (USCM) catalyst substrate design, under a variety of process flow and contaminant loading conditions is discussed. The experimental results are evaluated against present and future air quality control and process gas purification processes used on board crewed spacecraft.

Perry, J. L.↗
NASA NTRS2009

G(sup 4)FET Implementations of Some Logic Circuits

Some logic circuits have been built and demonstrated to work substantially as intended, all as part of a continuing effort to exploit the high degrees of design flexibility and functionality of the electronic devices known as G(sup 4)FETs and described below. These logic circuits are intended to serve as prototypes of more complex advanced programmable-logicdevice-type integrated circuits, including field-programmable gate arrays (FPGAs). In comparison with prior FPGAs, these advanced FPGAs could be much more efficient because the functionality of G(sup 4)FETs is such that fewer discrete components are needed to perform a given logic function in G(sup 4)FET circuitry than are needed perform the same logic function in conventional transistor-based circuitry. The underlying concept of using G(sup 4)FETs as building blocks of programmable logic circuitry was also described, from a different perspective, in G(sup 4)FETs as Universal and Programmable Logic Gates (NPO-41698), NASA Tech Briefs, Vol. 31, No. 7 (July 2007), page 44. A G(sup 4)FET can be characterized as an accumulation-mode silicon-on-insulator (SOI) metal oxide/semiconductor field-effect transistor (MOSFET) featuring two junction field-effect transistor (JFET) gates. The structure of a G(sup 4)FET (see Figure 1) is the same as that of a p-channel inversion-mode SOI MOSFET with two body contacts on each side of the channel. The top gate (G1), the substrate emulating a back gate (G2), and the junction gates (JG1 and JG2) can be biased independently of each other and, hence, each can be used to independently control some aspects of the conduction characteristics of the transistor. The independence of the actions of the four gates is what affords the enhanced functionality and design flexibility of G(sup 4)FETs. The present G(sup 4)FET logic circuits include an adjustable-threshold inverter, a real-time-reconfigurable logic gate, and a dynamic random-access memory (DRAM) cell (see Figure 2). The configuration of the adjustable-threshold inverter is similar to that of an ordinary complementary metal oxide semiconductor (CMOS) inverter except that an NMOSFET (a MOSFET having an n-doped channel and a p-doped Si substrate) is replaced by an n-channel G(sup 4)FET

Mojarradi, Mohammad↗
DOE OSTI2024

Modularization of Ceramic Hollow Fiber Membrane Technology for Air Separation

This proposed project is aimed at studying high performance and economically competitive ceramic membrane technology for air separation and high-purity oxygen production using hollow fiber ceramic membrane stack and module technology. The design of the single permeate membrane is a hollow fiber substrate-supported thin tri-layer structure. Radially well-aligned micro-channels are embedded in the thick substrate and open at the inner surface of the substrate, enabling facile air/gas diffusion. The tri-layer structure of thin dense membrane layer (~ 10 µm) sandwiched by porous surface layer on either side is then built on the substrate using advanced fabrication process. The tri-layer structure design allows different materials to be used in different layers, where the materials of surface layers have high surface exchange coefficients while the material of dense layer has high bulk diffusivity. Such a synergetic combination leads to high permeation performance. The focus of the proposed project will be on membrane stack/module development using the developed single hollow fiber membranes, including: 1) fabrication and characterization of novel single hollow fiber membranes; 2) membrane stack design and assembly using fabricated single membranes; 3) stack modeling and analysis to guide membrane stack designs; 4) permeation performance testing and characterization of membrane stacks. The hollow fiber feature and simple sealing requirement enable very compact design of membrane stacks, which have excellent flexibility for further modularizations at different scales. The operations of such membrane stack and module may employ the exhaust heat from other components of Integrated Gasification Combined Cycle and oxy-combustion systems. Therefore, modularization of such an air separation membrane technology can be incorporated into the DOE’s REMS (radically engineered modular systems)-gasification skid and support the oxidant feed of an oxygen-blown REMS gasifier scaled to different ranges.

01 COAL, LIGNITE, AND PEAT↗
NASA NTRS1981

Transient catalytic combustor model

A quasi-steady gas phase and thermally thin substrate model is used to analyze the transient behavior of catalytic monolith combustors in fuel lean operation. The combustor response delay is due to the substrate thermal inertia. Fast response is favored by thin substrate, short catalytic bed length, high combustor inlet and final temperatures, and small gas channel diameters. The calculated gas and substrate temperature time history at different axial positions provides an understanding of how the catalytic combustor responds to an upstream condition change. The computed results also suggest that the gas residence times in the catalytic bed in the after bed space are correlatable with the nondimensional combustor response time. The model also performs steady state combustion calculations; and the computed steady state emission characteristics show agreement with available experimental data in the range of parameters covered. A catalytic combustor design for automotive gas turbine engine which has reasonably fast response ( 1 second) and can satisfy the emission goals in an acceptable total combustor length is possible.

Tien, J. S.↗