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At least 73 records · Page 4

Pre- and post-annealing of mechanical damage in silicon wafers

Basic properties of mechanical damage in silicon consisting of cracks and abrasion were studied using transmission electron microscopy. The crystallographic structure of mechanical damage was determined before and after high temperature annealing. The main findings include that stresses in silicon around crack tips are not plastically relieved at room temperature and that abrasion at room temperature introduces shear loops into the silicon. It was also found that cracks of micron size can be annealed out, specifically, if cleavage occurs on 111 planes. The healing products of such cracks are 60 deg and 90 deg dislocations. Submicron cracks transform into stacking faults during annealing. Likewise high concentrations of shear loops due abrasion were found to anneal into stacking faults. A one to one correlation between surface areas containing small cracks and stacking faults was made. Measurements of damage removal on silicon surfaces through chemical-mechanical etching techniques are presented. It is shown that silicon dioxide repolishes damaged silicon surfaces most effectively.

Schwottke, G. H.↗

High-temperature creep of polycrystalline chromium.

Chromium prepared by the iodide process was consolidated into 100-g buttons by arc melting and fabricated to sheet by rolling. Test specimens machined from the wrought sheet were annealed in palladium-purified hydrogen, followed by a purification anneal, in order to produce stable grain structures for testing. Observations of surface slip lines and dislocation substructures suggest that a diffusion-controlled, dislocation-climb mechanism is operative in the creep of chromium over the temperature range investigated.

Stephens, J. R.↗

The life and times of Big Bertha - Lunar breccia 14321

The assembly and metamorphic history of polymict breccia 14321 are reconstructed. The earliest formed fragmental component of 14321 (microbreccia-1) is dominated by KREEP-rich norite, extruded and subsequently brecciated and lithified in an ejecta blanket at approximately 1000 C in the general region of Mare Imbrium after the Serenitatis impact but prior to the Imbrium impact. This early microbreccia component and lesser amounts of mare-type basalt, microgranite, rhyolite glass, anorthosite and olivine microbreccia were assembled at the Apollo 14 site as part of the Fra Mauro ejecta blanket from the Imbrium impact. The resulting microbreccia-3 incorporates all the lithic types above and accretionary lapilli structures (microbreccia-2) in a dark matrix annealed at approximately 700 C. A later impact on the Fra Mauro excavated and mutually abraded microbreccia-3 and a local, 14321-type, basalt which were assembled into polymict breccia 14321. Final placement of 14321 at its sampling location was accomplished during the minor Cone Crater impact event.

Duncan, A. R.↗

Chemical profiling of silicon nitride structures

X ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), and scanning electron microscopy (SEM) were used to study structural and chemical inhomogeneities in several electronic materials and device structures of relevance to radiation hard electronics. The systems studied include metal nitride oxide semiconductor (MNOS) structures, silicon oxynitride (SiO(x)N(y)) formed by the thermal nitridation of SiO2, and semiconductor on insulator (SOI) structures. Studies of MNOS structures suggest that the effect of H2 annealing is to make the Si3N4/SiO2 interface less abrupt by causing interdiffusion of silanol and silamine groups with subsequent oxynitride formation. Another effect of the annealing appears to be to relieve the strain at the SiO2/Si interface.

Vasquez, R. P.↗

Recrystallization and superplasticity at 300 C in an aluminum-magnesium alloy

Variations in thermomechanical processing (TMP) which regulate the microstructural characteristics and superplastic response of an Al-10Mg-0.1Zr alloy at 300 C were evaluated. Mechanical property data revealed that the superplastic ductility can be enhanced by simultaneously increasing the total rolling strain, the reduction per pass, and the duration of reheating intervals between passes during isothermal rolling. Texture and microscopy data were consistent with the development of a refined microstructure by recovery-dominated processes, i.e., continuous recrystallization, during the processing. The mechanisms by which a refined substructure can be progressively converted into a fine-grained structure during repeated cycles of deformation and annealing are addressed. A qualitative description of the complex sequence of developments leading to a microstructure better suited to support superplastic response is presented.

Hales, S. J.↗

A Specially Constructed Metallograph for Use at Elevated Temperatures

A Metallographic microscope was developed with provision for heating a specimen to 1800 F in protective atmospheres, that is, vacuum or gas. A special objective was constructed of reflecting elements with an unusually long working distance (7/16 in.) and a high numerical aperture (0.5). Changes in specimen microstructure were observed and recorded on 35-millimeter motion-picture film. The resulting pictures were projected as motion pictures and individual frames were cut and enlargements made for close observation. Structural changes upon heating a 0.35-percent annealed carbon steel and a 5-percent tin phosphor bronze specimen were observed and recorded. Newly formed microstructure were revealed by selective vacuum etching and specimen relief resulting from recrystallization and varying grain orientation.

INSTRUMENTS, LABORATORY↗

Optical processing for semiconductor device fabrication

A new technique for semiconductor device processing is described that uses optical energy to produce local heating/melting in the vicinity of a preselected interface of the device. This process, called optical processing, invokes assistance of photons to enhance interface reactions such as diffusion and melting, as compared to the use of thermal heating alone. Optical processing is performed in a 'cold wall' furnace, and requires considerably lower energies than furnace or rapid thermal annealing. This technique can produce some device structures with unique properties that cannot be produced by conventional thermal processing. Some applications of optical processing involving semiconductor-metal interfaces are described.

Sopori, Bhushan L.↗

Recursive Branching Simulated Annealing Algorithm

This innovation is a variation of a simulated-annealing optimization algorithm that uses a recursive-branching structure to parallelize the search of a parameter space for the globally optimal solution to an objective. The algorithm has been demonstrated to be more effective at searching a parameter space than traditional simulated-annealing methods for a particular problem of interest, and it can readily be applied to a wide variety of optimization problems, including those with a parameter space having both discrete-value parameters (combinatorial) and continuous-variable parameters. It can take the place of a conventional simulated- annealing, Monte-Carlo, or random- walk algorithm. In a conventional simulated-annealing (SA) algorithm, a starting configuration is randomly selected within the parameter space. The algorithm randomly selects another configuration from the parameter space and evaluates the objective function for that configuration. If the objective function value is better than the previous value, the new configuration is adopted as the new point of interest in the parameter space. If the objective function value is worse than the previous value, the new configuration may be adopted, with a probability determined by a temperature parameter, used in analogy to annealing in metals. As the optimization continues, the region of the parameter space from which new configurations can be selected shrinks, and in conjunction with lowering the annealing temperature (and thus lowering the probability for adopting configurations in parameter space with worse objective functions), the algorithm can converge on the globally optimal configuration. The Recursive Branching Simulated Annealing (RBSA) algorithm shares some features with the SA algorithm, notably including the basic principles that a starting configuration is randomly selected from within the parameter space, the algorithm tests other configurations with the goal of finding the globally optimal solution, and the region from which new configurations can be selected shrinks as the search continues. The key difference between these algorithms is that in the SA algorithm, a single path, or trajectory, is taken in parameter space, from the starting point to the globally optimal solution, while in the RBSA algorithm, many trajectories are taken; by exploring multiple regions of the parameter space simultaneously, the algorithm has been shown to converge on the globally optimal solution about an order of magnitude faster than when using conventional algorithms. Novel features of the RBSA algorithm include: 1. More efficient searching of the parameter space due to the branching structure, in which multiple random configurations are generated and multiple promising regions of the parameter space are explored; 2. The implementation of a trust region for each parameter in the parameter space, which provides a natural way of enforcing upper- and lower-bound constraints on the parameters; and 3. The optional use of a constrained gradient- search optimization, performed on the continuous variables around each branch s configuration in parameter space to improve search efficiency by allowing for fast fine-tuning of the continuous variables within the trust region at that configuration point.

Bolcar, Matthew↗

Glennan Microsystems Initiative

During the 2001-2002 award period, we performed research on Pt/Ti/bare 6H-SiC and bare 4H-SiC interfaces in order to identify their electronic properties as a function of surface preparation. The overall aim of this work is to optimize the electronic properties of metal contacts to SiC as well as the active SiC material itself as a function of surface preparation and subsequent processing. Initially, this work has involved identifying bare surface, subsurface, and metal induced gap states at the metal-SiC contact and correlating energies and densities of deep levels with Schottky barrier heights. We used low energy electron-excited nanoluminescence (LEEN) spectroscopy, X-ray photoemission spectroscopy (XPS), and Secondary Ion Mass Spectrometry (SIMS) in order to correlate electronic states and energy bands with chemical composition, bonding, and crystal structure. A major development has been the discovery of polytype transformations that occur in 4H-SiC under standard microelectronic process conditions used to fabricate SiC devices. Our results are consistent with the stacking fault generation, defect formation, and consequent degradation of SiC recently reported for state-of-the-art ABB commercial diodes under localized electrical stress. Our results highlight the importance of -optimizing process conditions and material properties - anneal times, temperatures and doping to control such structural changes within epitaxial SiC layers. Thus far, we have established threshold times and temperatures beyond which 4H-SiC exhibits 3C-SiC transformation bands for a subset of dopant concentrations and process conditions. On the basis of this temperature time behavior, we have been able to establish an activation energy of approximately 2.5 eV for polytype transformation and dislocation motion. Work continues to establish the fundamental mechanisms underlying the polytype changes and its dependence on material parameters.

Brillson, Leonard J.↗

New adatom model for Si(11) 7X7 and Si(111)Ge 5X5 reconstructed surfaces

A new adatom model differing from the conventional model by a reconstruction of the substrate is proposed. The new adatom structure provides an explanation for the 7x7 and 5x5 size of the unit cells seen on annealed Si(111) and Si(111)-Ge surfaces, respectively. The model is consistent with structural information from vacuum-tunneling microscopy. It also provides simple explanations for stacking-fault-type features expected from Rutherford backscattering experiments and for similarities in the LEED and photoemission spectra of 2x1 and 7x7 surfaces.

Chadi, D. J.↗

Interfacial chemical reactions between MoS2 lubricants and bearing materials

XPS and conversion-electron Moessbauer spectroscopy (CEMS) were used to examine iron that was deposited on the basal plane of MoS2 single crystals and subjected to vacuum annealing, oxidizing, and reducing environments. Iron either intercalated into the MoS2 structure or formed oriented iron sulfides, depending on the level of excess S in the MoS2 structure. CEMS data demonstrated that iron sulfide crystal structures preferentially aligned with respect to the MoS2 basal plane, and that alignment (and potentially adhesion) could be varied by appropriate high-temperature annealing procedures.

Zabinski, J. S.↗

Defect characterization in ZnGeP2 by time-resolved photoluminescence

The native defect-related optical properties of ZnGeP2 are studied by steady-state and time-resolved photoluminescence. ZnGeP2 crystals grown from the vapor phase by high pressure physical vapor transport (HPVT) and from the melt by gradient freezing (GF) show a broad infrared emission with peak position at 1.2 eV with a decay time constant of a few micro-s and a faster recombination center peaked at 1.68 eV. The decay transient for the emission at 1.2 eV exhibits features of classical donor-acceptor recombination and is linked to close-pairs that are tentatively associated with germanium-on-zinc antisite donors and zinc vacancy acceptors. Higher energetic luminescence structures at 1.6eV and 1.7eV are revealed after annealing of the ZnGeP2 crystals and are associated with the formation zinc and phosphorous vacancies in the near surface region. ZnGeP2 crystals grown by HPVT from zinc and phosphorus supersaturated vapor compositions show additional emission structure at 1.8 eV and a sharp donor-acceptor emission at 1.778 eV that is related to the presence of additional donor states.

Dietz, N.↗

Learned pattern recognition using synthetic-discriminant-functions

A method of using synthetic-discriminant-functions to facilitate learning in a pattern recognition system is discussed. Learning is accomplished by continually adding images to the training set used for synthetic discriminant functions (SDF) construction. Object identification is performed by efficiently searching a library of SDF filters for the maximum optical correlation. Two library structures are discussed - binary tree and multilinked graph - along with maximum ascent, back-tracking, perturbation, and simulated annealing searching techniques. By incorporating the distortion invariant properties of SDFs within a library structure, a robust pattern recognition system can be produced.

Jared, David A.↗

Superconductivity in sputtered CuMO6S8

Samples were prepared by melting the metals, followed by annealing to various temperatures. The result was a structurally weak material. Sputtered films on sapphire substrates were prepared and studied. The substrates give the films mechanical strength and permit easy attachment of electrical leads. Materials were characterized by X-ray diffraction, electron microscopy, electrical resistance vs. temperature, and critical current measurements. Some of the results on CuMo6S8 are presented.

Alterovitz, S.↗

Deformation behavior of NiAl-based alloys containing iron, cobalt, and hafnium

The effects of alloying additions on the mechanical properties of the B2 intermetallic NiAl have been investigated in both the melt-spun ribbon and consolidated, bulk form. The study is based on a matrix of NiAl-based alloys with up to 20 at. pct Co and Fe additions and with reduced Al levels in the range of 30-40 at. pct. Characterization of the melt-spun ribbon by optical and scanning electron microscopy indicates a range of microstructures, including single-phase beta, gamma-prime necklace phase surrounding either martensitic or beta grains, and a mixture of equiaxed martensitic and gamma-prime grains. Bend ductility is present in melt-spun and annealed ribbons exhibiting the gamma-prime necklace structure and in a single-phase beta material containing 20 at. pct Fe. The analysis of compressive flow behavior on consolidated, bulk specimens indicates that the single-phase beta alloys exhibit a continuous decrease in yield stress with increasing temperature and profuse microcracking at grain boundaries. In contrast, multiphase (gamma-prime + either martensite or beta) alloys tend to display a peak in flow stress between 600 and 800 K, with little or no signs of microcracking. In general, heat treatments which convert the martensitic grains to beta + gamma-prime result in improved strength at temperatures above 600 K and better resistance to crack initiation.

Pank, D. R.↗

Effects of Nucleus Ice Annealing History on Cometary Outgassing (abstract)

An important consideration for comet modeling is the dependence of the thermal conductivity on the comet structure. The microporosity of the comet ices changes with time as the phase of the ice and its annealing history progresses. Effects of these [modeled] changes on the overall gas production, as a function of time, are presented.

comet outgassing annealing ice dust thermal conduc↗