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At least 73 records · Page 4

Interconnect and Packaging Technologies for Terahertz Communication Systems

Using newly developed silicon micromachining technology that enables low-loss and highly integrated packaging solutions, we are developing vertically stacked transmitters and receivers at terahertz frequencies that can be used for communication and other terahertz systems. Although there are multiple ways to address the problem of interconnect and packaging solutions at these frequencies, such as system-on-package (SOP), multi-chip modules (MCM), substrate integrated waveguide (SIW), liquid crystal polymer (LCP) based multilayer technologies, and others, we show that deep reactive ion etching (DRIE) based silicon micromachining with vertical integration allows the most effective solutions at terahertz frequencies.

Micromachining↗

The Impact on Space Radiation Requirements and Effects on ASIMS

The evolution of highly miniaturized electronic and mechanical systems will be accompanied by new problems and issues regarding the radiation response of these systems in the space environment. In this paper we discuss some of the more prominent radiation problems brought about by miniaturization. For example, autonomous micro-spacecraft will require large amounts of high density memory, most likely in the form of stacked, multichip modules of DRAM's, that must tolerate the radiation environment. However, advanced DRAM's (16 to 256 Mbit) are quite susceptible to radiation, particularly single event effects, and even exhibit new radiation phenomena that were not a problem for older, less dense memory chips. Another important trend in micro-spacecraft electronics is toward the use of low-voltage microelectronic systems that consume less power. However, the reduction in operating voltage also caries with it an increased susceptibility to radiation. In the case of application specific integrated microcircuits (ASIM's), advanced devices of this type, such as high density field programmable gate arrays (FPGA's) exhibit new single event effects (SEE), such as single particle reprogramming of anti-fuse links. New advanced bipolar circuits have been shown recently to degrade more rapidly in the low dose rate space environment than in the typical laboratory total dose radiation test used to qualify such devices. Thus total dose testing of these parts is no longer an appropriately conservative measure to be used for hardness assurance. We also note that the functionality of micromechanical Si-based devices may be altered due to the radiation-induced deposition of charge in the oxide passivation layers.

Barnes, C.↗

Study of a Flexible Low Profile Tunable Dipole Antenna Using Barium Strontium Titanate Varactors

In this paper a flexible low profile dipole antenna using a frequency selective surface (FSS) with interdigital barium strontium titanate (BST) varactor-tuned unit cells is presented. The varactor chips were placed only along one dimension of the FSS to avoid the use of vias and simplify the DC bias network. The antenna uses overlapping metallic plates that resemble fish scales as a ground plane to improve the flexibility of the multi-material stack structure. The measured data of the antenna demonstrate tunability from 2.42 GHz to 2.66 GHz and 1.3 dB gain drop when using overlapping metallic plates instead of continuous ground plane. The total antenna thickness is approximately lambda/24.

Flexible antennas↗

A New Route to Quantum-Scale Structures through a Novel Enhanced Germanium Diffusion Mechanism

This project sought to develop a fundamental understanding of the mechanisms underlying a newly observed enhanced germanium (Ge) diffusion process in silicon germanium (SiGe) semiconductor nanostructures during thermal oxidation. Using a combination of oxidationdiffusion experiments, high resolution imaging, and theoretical modeling, a model for the enhanced Ge diffusion mechanism was proposed. Additionally, a nanofabrication approach utilizing this enhanced Ge diffusion mechanism was shown to be applicable to arbitrary 3D shapes, leading to the fabrication of stacked silicon quantum dots embedded in SiGe nanopillars. A new wet etch-based method for preparing 3D nanostructures for highresolution imaging free of obscuring material or damage was also developed. These results enable a new method for the controlled and scalable fabrication of on-chip silicon nanostructures with sub-10 nm dimensions needed for next generation microelectronics, including low energy electronics, quantum computing, sensors, and integrated photonics.

36 MATERIALS SCIENCE↗

Kinematic chip to chip bonding

The various technologies presented herein relate to integrating an IC having at least one waveguide incorporated therein with a v-groove array IC such that an optical fiber located in a v-groove is aligned relative to a waveguide in the IC maximizing optical coupling between the fiber and the waveguide. The waveguide IC and the v-groove array IC are bonded in a stacked configuration. Alignment of the waveguide IC and the array IC in the stacked configuration enables advantage to be taken of lithographic accuracy of features formed with respect to the Z-direction. Further, kinematic pins and sockets are utilized to provision accuracy in the X- and Z-directions, wherein advantage is taken of the placement accuracy and fabrication tolerance(s) which can be utilized when forming the and sockets. Accordingly, automated alignment of the waveguide IC and the array IC is enabled, facilitating accurate alignment of the respective waveguides and fibers.

42 ENGINEERING↗

Integrated power passives

A multi-layer film-stack and method for forming the multilayer film-stack is given where a series of alternating layers of conducting and dielectric materials are deposited such that the conducting layers can be selectively addressed. The use of the method to form integratable high capacitance density capacitors and complete the formation of an integrated power system-on-a-chip device including transistors, conductors, inductors, and capacitors is also given.

Xie, Huikai↗

Light Confinement in Twisted Single-Layer 2D+ Moiré Photonic Crystals and Bilayer Moiré Photonic Crystals

Twisted photonic crystals are photonic analogs of twisted monolayer materials such as graphene and their optical property studies are still in their infancy. This paper reports optical properties of twisted single-layer 2D+ moiré photonic crystals where there is a weak modulation in z direction, and bilayer moiré-overlapping-moiré photonic crystals. In weak-coupling bilayer moiré-overlapping-moiré photonic crystals, the light source is less localized with an increasing twist angle, similar to the results reported by the Harvard research group in References 37 and 38 on twisted bilayer photonic crystals, although there is a gradient pattern in the former case. In a strong-coupling case, however, the light source is tightly localized in AA-stacked region in bilayer PhCs with a large twist angle. For single-layer 2D+ moiré photonic crystals, the light source in Ex polarization can be localized and forms resonance modes when the single-layer 2D+ moiré photonic crystal is integrated on a glass substrate. This study leads to a potential application of 2D+ moiré photonic crystal in future on-chip optoelectronic integration.

36 MATERIALS SCIENCE↗

Update on Development of SiC Multi-Chip Power Modules

Progress has been made in a continuing effort to develop multi-chip power modules (SiC MCPMs). This effort at an earlier stage was reported in 'SiC Multi-Chip Power Modules as Power-System Building Blocks' (LEW-18008-1), NASA Tech Briefs, Vol. 31, No. 2 (February 2007), page 28. The following recapitulation of information from the cited prior article is prerequisite to a meaningful summary of the progress made since then: 1) SiC MCPMs are, more specifically, electronic power-supply modules containing multiple silicon carbide power integrated-circuit chips and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking; 2) The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules; and, 3) In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications. Because identical SiC MCPM building blocks could be utilized in such a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. This concludes the information from the cited prior article. The main activity since the previously reported stage of development was the design, fabrication, and testing a 120- VDC-to-28-VDC modular power-converter system composed of eight SiC MCPMs in a 4 (parallel)-by-2 (series) matrix configuration, with normally-off controllable power switches. The SiC MCPM power modules include closed-loop control subsystems and are capable of operating at high power density or high temperature. The system was tested under various configurations, load conditions, load-transient conditions, and failure-recovery conditions. Planned future work includes refinement of the demonstrated modular system concept and development of a new converter hardware topology that would enable sharing of currents without the need for communication among modules. Toward these ends, it is also planned to develop a new converter control algorithm that would provide for improved sharing of current and power under all conditions, and to implement advanced packaging concepts that would enable operation at higher power density.

Lostetter, Alexander↗

SiC Multi-Chip Power Modules as Power-System Building Blocks

The term "SiC MCPMs" (wherein "MCPM" signifies "multi-chip power module") denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking. Moreover, the higher-temperature capabilities of SiC MCPMs could enable operation in environments hotter than Si-based power systems can withstand. The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules. In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications: typical functions could include regulating voltages, storing energy, and driving motors. Because identical SiC MCPM building blocks could be utilized in a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. Several prototype DC-to-DC power-converter modules containing SiC power-switching devices were designed and built to demonstrate the feasibility of the SiC MCPM concept. In anticipation of a future need for operation at high temperature, the circuitry in the modules includes high-temperature inductors and capacitors. These modules were designed to be stacked to construct a system of four modules electrically connected in series and/or parallel. The packaging of the modules is designed to satisfy requirements for series and parallel interconnection among modules, high power density, high thermal efficiency, small size, and light weight. Each module includes four output power connectors two for serial and two for parallel output power connections among the modules. Each module also includes two signal connectors, electrically isolated from the power connectors, that afford four zones for signal interconnections among the SOI controllers. Finally, each module includes two input power connectors, through which it receives power from an in-line power bus. This design feature is included in anticipation of a custom-designed power bus incorporating sockets compatible with snap-on type connectors to enable rapid replacement of failed modules.

Lostetter, Alexander↗

Port and optimize the CEED software stack to Aurora/Frontier EA (ECP Milestone Report)

The goal of this milestone was to port the CEED software stack, including Nek, MFEM and libCEED to the Frontier and Aurora early access hardware, work on optimizing the performance on AMD and Intel GPUs, and demonstrate impact in CEED-enabled ECP applications. As part of this milestone, we also performed a number of other activities, including continued optimizations for CEED applications at scale on Summit, performance evaluation on non-ECP hardware, including the Fugaku’s A64FX chip and the NVIDIA A100 GPU architecture, exploring the use of just-in-time compilations in applications at scale and potential of mixed precision optimizations in the CEED discretization and solver algorithms, and more. During the milestone period, the CEED team released new versions of 6 of its packages, including major releases of MFEM, NekRS and OCCA. We also organized the fifth CEED Annual meeting (CEED5AM) which included nearly 100 researchers from national labs, universities and industry.

97 MATHEMATICS AND COMPUTING↗

Multijunction InGaAs thermophotovoltaic power converter

The experimental performance of a multijunction monolithic lattice-matched 0.74 eV InGaAs thermophotovoltaic (TPV) power converter under 980 C blackbody irradiation is reported. Eight InGaAs PN junctions grown epitaxially on a semi-insulating wafer were monolithically integrated in series to boost the approximately 0.4 V photovoltage per typical InGaAs junction to over 3 volts for the 1 cm(exp 2) chip. This chip was originally designed and characterized for free-space 1.3 micron laser power beaming. The power efficiency of this TPV device is 16% for that part of the blackbody spectrum above the material bandgap. The device is shown to deliver about 1 watt of output power when driven with enough light. This is the first report of such a multijunction TPV device. This is not a traditional tandem cell in which the junctions are stacked vertically. Eight 1 mm long by 1 cm wide junctions are laterally connected across the device area. This multijunction design has the potential for lower I(exp 2)R power loss since the smaller PN junction area limits the current to one eighth that of the equivalent surface area. In essence, the current is traded for voltage to avoid the I(exp 2)R loss, analogous to the way power utilities avoid I(exp 2)R loss in high-tension power lines, by transforming the high current, low voltage generated at a power plant into a high voltage at a low current before transmitting the power over great distances.

Wojtczuk, Steven↗

kynema-fmb [SWR-23-07]

Kynema-FMB (FKA: Kynema) is an open-source performance portable flexible multibody (FMB) dynamics solver designed for time-domain simulations. While originally tailored for wind turbine structural dynamics, the formulation and implementation are those of a general flexible-multidbody dynamics solver that can readily be applied to a wide range of systems. Kynema was designed with a narrow focus, namely to provide a lightweight, fast, accurate FMD solver for coupling to computational-fluid-dynamics (CFD) codes, especially the CFD codes in the Kynema suite, for fluid-structure-interaction (FSI) simulations. Kynema-FMB is equipped to model systems that can be represented as a collection of beams and rigid bodies that are connected through constraints. Degrees of freedom are defined in the inertial/global frame of reference and include displacements and rotations (formally as rotation matrices, but stored as quaternions). The underlying formulation is built on a Lie-group time integrator designed for index-3 differential-algebraic equations, which is second-order accurate in time (Bruls et al., 2012). Beam models are based on geometrically exact beam theory and are discretized as high-order spectral finite elements similar to those in BeamDyn (Wang et al., 2017). The governing equations for a FMD system like a wind turbine constitute a highly nonlinear system of constrained partial-differential equations. Kynema-FMB uses analytical Jacobians in the nonlinear-system solves in each time step. Linear systems use sparse storage and several third-party sparse-linear-system solvers are enabled. Ill conditioning of linear systems is mitigated with preconditioning described in Bottasso et al, 2008. Kynema-FMB is integrated with a simple open-source controller (ROSCO). There is an application programming interface (API) for coupling to geometry-resolved CFD (like that in Sharma et al., 2023) and actuator-force CFD (like that in Kuhn et al., 2025). In the latter, for actuator-line models, Kynema-FMB includes an internal blade-element solver that depends on user-provided lookup tables for coefficients of lift and drag, i.e., aerodynamic polars. Kynema-FMB is written in C++ and leverages Kokkos and Kokkos-Kernels (KokkosEcosystem) as its performance portability layer enabling simulations on both CPU and GPU systems. The repository is equipped with extensive automated testing at the unit and regression/system levels. The following describes the high-level development objectives conceived for Kynema: *Kynema will follow modern software development best practices, including test-driven development (TDD), version control, hierarchical automated testing, and continuous integration (CI) for a robust development environment. *The core data structures are memory efficient and enable vectorization and parallelization at multiple levels. *Data structures are data-oriented to exploit methods for accelerated computing including high utilization of chip resources (e.g., single instruction multiple data (SIMD) instruction sets) and parallelization using GP-GPUs. *The computational algorithms incorporate robust open-source libraries for mathematical operations, resource allocation, and data management. *The API design considers multiple stakeholder needs and ensure integration with existing and future ecosystems for data science, machine learning, and AI. *Kynema-FMB is written in modern C++ and leverages Kokkos as its performance-portability library with inspiration from the kynema stack.

Sprague, MichaelA.↗

Beam test performance studies of CMS Phase-2 Outer Tracker module prototypes

A new tracking detector will be installed as part of thePhase-2 upgrade of the CMS detector for the high-luminosity LHC era.This tracking detector includes the Inner Tracker, equipped withsilicon pixel sensor modules, and the Outer Tracker, consisting ofmodules with two parallel stacked silicon sensors. The Outer Trackerfront-end ASICs will be able to correlate hits from chargedparticles in these two sensors to perform on-module discriminationof transverse momenta (p$_{T}$). The p$_{T}$information is generated at a frequency of 40 MHz and will be usedin the Level-1 trigger decision of CMS. Prototypes of theso-called 2S modules were tested at the Test Beam Facility at DESYHamburg between 2019 and 2020. These modules use the finalfront-end ASIC, the CMS Binary Chip (CBC), and for the firsttime the Concentrator Integrated Circuit (CIC), optical readoutand on-module power conversion. In total, seven modules were tested,one of which was assembled with sensors irradiated with protons. Animportant aspect was to show that it is possible to read out modulessynchronously. A cluster hit efficiency of about 99.75 % wasachieved for all modules. The CBC p$_{T}$ discriminationmechanism has been verified to work together with the CIC andoptical readout. The measured module performance meets therequirements for operation in the upgraded CMS tracking detector.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Design and Fabrication of Two-Dimensional Semiconducting Bolometer Arrays for the High Resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC-II)

The High resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC 11) will use almost identical versions of an ion-implanted silicon bolometer array developed at the National Aeronautics and Space Administration's Goddard Space Flight Center (GSFC). The GSFC "Pop-Up" Detectors (PUD's) use a unique folding technique to enable a 12 x 32-element close-packed array of bolometers with a filling factor greater than 95 percent. A kinematic Kevlar(Registered Trademark) suspension system isolates the 200 mK bolometers from the helium bath temperature, and GSFC - developed silicon bridge chips make electrical connection to the bolometers, while maintaining thermal isolation. The JFET preamps operate at 120 K. Providing good thermal heat sinking for these, and keeping their conduction and radiation from reaching the nearby bolometers, is one of the principal design challenges encountered. Another interesting challenge is the preparation of the silicon bolometers. They are manufactured in 32-element, planar rows using Micro Electro Mechanical Systems (MEMS) semiconductor etching techniques, and then cut and folded onto a ceramic bar. Optical alignment using specialized jigs ensures their uniformity and correct placement. The rows are then stacked to create the 12 x 32-element array. Engineering results from the first light run of SHARC II at the CalTech Submillimeter Observatory (CSO) are presented.

Voellmer, George M.↗

Design and Fabrication of Two-Dimensional Semiconducting Bolometer Arrays for the High Resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC-II)

The High resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC II) will use almost identical versions of an ion-implanted silicon bolometer array developed at the National Aeronautics and Space Administration's Goddard Space Flight Center (GSFC). The GSFC 'Pop-up' Detectors (PUD's) use a unique folding technique to enable a 12 x 32-element close-packed array of bolometers with a filling factor greater than 95 percent. A kinematic Kevlar(trademark) suspension system isolates the 200 mK bolometers from the helium bath temperature, and GSFC - developed silicon bridge chips make electrical connection to the bolometers, while maintaining thermal isolation. The JFET preamps operate at 120 K. Providing good thermal heat sinking for these, and keeping their conduction and radiation from reaching the nearby bolometers, is one of the principal design challenges encountered. Another interesting challenge is the preparation of the silicon bolometers. They are manufactured in 32-element, planar rows using Micro Electro Mechanical Systems (MEMS) semiconductor etching techniques, and then cut and folded onto a ceramic bar. Optical alignment using specialized jigs ensures their uniformity and correct placement. The rows are then stacked to create the 12 x 32-element array. Engineering results from the first light run of SHARC II at the Caltech Submillimeter Observatory (CSO) are presented.

Voellmer, George M.↗

Progress toward picosecond on-chip magnetic memory

Here, we offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ~3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ~6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.

42 ENGINEERING↗

High Density Memory Based on Quantum Device Technology

We explore the feasibility of ultra-high density memory based on quantum devices. Starting from overall constraints on chip area, power consumption, access speed, and noise margin, we deduce boundaries on single cell parameters such as required operating voltage and standby current. Next, the possible role of quantum devices is examined. Since the most mature quantum device, the resonant tunneling diode (RTD) can easily be integrated vertically, it naturally leads to the issue of 3D integrated memory. We propose a novel method of addressing vertically integrated bistable two-terminal devices, such as resonant tunneling diodes (RTD) and Esaki diodes, that avoids individual physical contacts. The new concept has been demonstrated experimentally in memory cells of field effect transistors (FET's) and stacked RTD's.

vanderWagt, Paul↗

A cryogenic muon tagging system based on kinetic inductance detectors for superconducting quantum processors

Ionizing radiation has emerged as a potential limiting factor for superconducting quantum processors, inducing quasiparticle bursts and correlated errors that challenge fault-tolerant operation. Atmospheric muons are particularly problematic due to their high energy and penetration power, making passive shielding ineffective. Therefore, monitoring the real-time muon flux is crucial to guide the development of alternative error-correction or mitigation strategies. We present the design, simulation, and first operation of a cryogenic muon-tagging system based on kinetic inductance detectors (KIDs), developed as a stand-alone cryogenic particle-tagging module for superconducting quantum processors. The system consists of two KIDs arranged in a vertical stack and operated at ∼20 mK. Monte Carlo simulations based on Geant4 guided the prototype design and provided reference expectations for muon-tagging efficiency and accidental coincidences due to ambient γ-rays. We observed a muon-induced coincidence rate among the top and bottom detectors of (192 ± 9) $\times\,10^{-3}$ events s$^{−1}$, in excellent agreement with the Monte Carlo prediction. The prototype achieves a muon-tagging efficiency of about 90% with negligible dead time. These results demonstrate the feasibility of operating a muon-tagging system at millikelvin temperatures and represent a key step toward the integration of cryogenic veto systems with multi-qubit chips to mitigate muon-induced errors.

Mariani, Ambra [INFN, Rome] (ORCID:000000028184857↗