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CoMnCrGa: a novel ferromagnetic material with high spin-polarization for room temperature spintronics
Here, we report the synthesis of a novel quaternary Heusler alloy CoMnCrGa and its structural, magnetic, transport and electronic properties using both experimental and theoretical methods.
Nonequilibrium spintronic transport through Kondo impurities
In this work we analyze the nonequilibrium transport through a quantum impurity (quantum dot or molecule) attached to ferromagnetic leads by using a hybrid numerical renormalization group–time-dependent density matrix renormalization group thermofield quench approach. For this, we study the bias dependence of the differential conductance through the system, which shows a finite zero-bias peak, characteristic of the Kondo resonance and reminiscent of the equilibrium local density of states. In the nonequilibrium settings, the resonance in the differential conductance is also found to decrease with increasing the lead spin polarization. The latter induces an effective exchange field that lifts the spin degeneracy of the dot level. Therefore, as we demonstrate, the Kondo resonance can be restored by counteracting the exchange field with a finite external magnetic field applied to the system. Lastly, we investigate the influence of temperature on the nonequilibrium conductance, focusing on the split Kondo resonance. Our work thus provides an accurate quantitative description of the spin-resolved transport properties relevant for quantum dots and molecules embedded in magnetic tunnel junctions.
Spintronics Meets Density Matrix Renormalization Group: Quantum Spin-Torque-Driven Nonclassical Magnetization Reversal and Dynamical Buildup of Long-Range Entanglement
Not Available
Development of Spintronic Sampling Devices for Probabilistic Edge Computing
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Unsupervised Competitive Hardware Learning Rule for Spintronic Clustering Architecture.
Abstract not provided.
Shape anisotropy effects on magnetic domain wall dynamics in spintronic devices.
Abstract not provided.
Update 2: Shape anisotropy effects on magnetic domain wall dynamics in spintronic devices.
Abstract not provided.
Shape anisotropy effects on magnetic domain wall dynamics in spintronic devices [Final presentation].
Abstract not provided.
CMOS-Free Spintronic Neural Network with Unsupervised Learning.
Abstract not provided.
Progress toward picosecond on-chip magnetic memory
Here, we offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ~3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ~6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.
Field-free deterministic switching of all–van der Waals spin-orbit torque system above room temperature
Two-dimensional van der Waals (vdW) magnetic materials hold promise for the development of high-density, energy-efficient spintronic devices for memory and computation. Recent breakthroughs in material discoveries and spin-orbit torque control of vdW ferromagnets have opened a path for integration of vdW magnets in commercial spintronic devices. However, a solution for field-free electric control of perpendicular magnetic anisotropy (PMA) vdW magnets at room temperatures, essential for building compact and thermally stable spintronic devices, is still missing. Here, we report a solution for the field-free, deterministic, and nonvolatile switching of a PMA vdW ferromagnet, Fe 3 GaTe 2 , above room temperature (up to 320 K). We use the unconventional out-of-plane anti-damping torque from an adjacent WTe 2 layer to enable such switching with a low current density of 2.23 × 10 6 A cm –2 . This study exemplifies the efficacy of low-symmetry vdW materials for spin-orbit torque control of vdW ferromagnets and provides an all-vdW solution for the next generation of scalable and energy-efficient spintronic devices.
Investigation of spin and magnetism in two dimensional materials with atomic-scale spatial resolution (Final Technical Report)
Spintronics is an approach to energy-efficient electronics beyond silicon CMOS that utilizes the electron’s spin degree of freedom for memory and logic. The record spin diffusion length in graphene has generated considerable interest in two dimensional (2D) materials (i.e. graphene and beyond) as a platform for spintronics. Magnetism in 2D van der Waals materials may offer additional opportunities for tunability via strain, external fields, and layer-dependent quantum effects. The inherently atomic-scale nature of exchange interactions and the inherently all-surface nature of 2D sheets motivate an integrated approach combining atomic-scale magnetic characterization, epitaxial growth, and nanodevice fabrication. The mission of the research is to develop and utilize atomic-scale imaging of spin and magnetism via spin-polarized scanning tunneling microscopy (STM) in conjunction with atom-by-atom materials growth via molecular beam epitaxy (MBE) and nanoscale device fabrication to explore new frontiers of spintronics and quantum science in 2D materials. The PIs are particularly motivated by understanding how the magnetic and spin-dependent properties at the atomic scale lead to interesting and potentially useful phenomena in spintronic devices at the macroscopic scale.