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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Voltage-controlled spin–orbit torque switching in W/CoFeB/MgO

Voltage control of magnetism and spintronics have been highly desirable but rarely realized. In this work, we show voltage-controlled spin–orbit torque (SOT) switching in W/CoFeB/MgO films with perpendicular magnetic anisotropy (PMA) with voltage administered through SrTiO 3 with a high dielectric constant. We show that a DC voltage can significantly lower PMA by 45%, reduce switching current by 23%, and increase the damping-like torque as revealed by the first- and second-harmonic measurements. These are characteristics that are prerequisites for voltage-controlled and voltage-select SOT switching spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Three-Dimensional Dynamics of a Magnetic Hopfion Driven by Spin Transfer Torque

Magnetic hopfion is a three-dimensional (3D) topological soliton with novel spin structure that would enable exotic dynamics. Herein, we observe and research the current-driven 3D dynamics of a magnetic hopfion with a unit Hopf index in a frustrated magnet. Attributed to the spin Berry phase and symmetry of the hopfion, the phase space entangles multiple collective coordinates, thus the hopfion exhibits rich dynamics including longitudinal motion along the current direction, transverse motion perpendicular to the current direction, rotational motion, and dilation. Furthermore, the characteristics of hopfion dynamics is determined by the ratio between the nonadiabatic spin transfer torque parameter and the damping parameter. Such peculiar 3D dynamics of magnetic hopfion could shed light on understanding the universal physics of hopfions in different systems and boost the prosperous development of 3D spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Magnetic tunnel junction random number generators applied to dynamically tuned probability trees driven by spin orbit torque

Abstract Perpendicular magnetic tunnel junction (pMTJ)-based true-random number generators (RNGs) can consume orders of magnitude less energy per bit than CMOS pseudo-RNGs. Here, we numerically investigate with a macrospin Landau–Lifshitz-Gilbert equation solver the use of pMTJs driven by spin–orbit torque to directly sample numbers from arbitrary probability distributions with the help of a tunable probability tree. The tree operates by dynamically biasing sequences of pMTJ relaxation events, called ‘coinflips’, via an additional applied spin-transfer-torque current. Specifically, using a single, ideal pMTJ device we successfully draw integer samples on the interval [0, 255] from an exponential distribution based on p -value distribution analysis. In order to investigate device-to-device variations, the thermal stability of the pMTJs are varied based on manufactured device data. It is found that while repeatedly using a varied device inhibits ability to recover the probability distribution, the device variations average out when considering the entire set of devices as a ‘bucket’ to agnostically draw random numbers from. Further, it is noted that the device variations most significantly impact the highest level of the probability tree, with diminishing errors at lower levels. The devices are then used to draw both uniformly and exponentially distributed numbers for the Monte Carlo computation of a problem from particle transport, showing excellent data fit with the analytical solution. Finally, the devices are benchmarked against CMOS and memristor RNGs, showing faster bit generation and significantly lower energy use.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Spin-orbit-proximitized ferromagnetic metal by monolayer transition metal dichalcogenide: Atlas of spectral functions, spin textures, and spin-orbit torques in Co/MoSe 2 , Co/WSe 2 and Co/TaSe 2 heterostructures

In this work, the heterostructures composed of an ultrathin ferromagnetic metal (FM) and a material hosting strong spin-orbit (SO) coupling are the principal resource for SO torque and spin-to-charge conversion nonequilibrium effects in spintronics. The key quantity in theoretical description of these effects is nonequilibrium spin density, which can appear on any monolayer of the heterostructure through which the current is flowing as long as the monolayer bands are affected by the native or proximity induced SO coupling. Here we demonstrate how hybridization of wave functions of Co layer and a monolayer of transition metal dichalcogenides (TMDs)—such as semiconducting MoSe 2 and WSe 2 or metallic TaSe 2 —can lead to dramatic transmutation of electronic and spin structure of Co within some distance away from its interface with TMD, when compared to the bulk of Co or its surface in contact with a vacuum. This is due to proximity induced SO splitting of Co bands encoded in the spectral functions and spin textures on its monolayers, which we obtain using noncollinear density functional theory (ncDFT) combined with equilibrium Green function (GF) calculations. In fact, SO splitting is present due to structural inversion asymmetry of the bilayer—i.e., just the presence of the interface—even if SO coupling within TMD monolayer is artificially switched off in ncDFT calculations. However, switching it on makes the effects associated with proximity SO coupling within Co layer about five times larger. Injecting spin-unpolarized charge current through SO-proximitized monolayers of Co generates nonequilibrium spin density over them, so that its cross product with the magnetization of Co determines SO torque. The SO torque computed via first-principles quantum transport methodology, which combines ncDFT with nonequilibrium GF calculations, can be used as the screening parameter to identify optimal combination of materials and their interfaces for applications in spintronics. In particular, we identify heterostructure two-monolayer-Co/monolayer-WSe 2 as the most optimal one, at least in the clean limit.

2-dimensional systems↗
DOE OSTI2023

Large Spin-Orbit-Torque Efficiency and Room-Temperature Magnetization Switching in Sr Ir O 3 / Co-Fe-B Heterostructures

Spin-orbit-torque (SOT) switching is a potentially energy-efficient mechanism by which electrical current can control magnetization. We demonstrate room-temperature SOT switching in nanometer-thick Co⁢Fe⁢B/Sr⁢Ir⁢O 3 bilayers despite the amorphous nature of CoFeB and the interface. This behavior is attributed to the large spin Hall angle in Sr⁢Ir⁢O 3 as well as high spin transmission at the interface that contribute to the SOT efficiency ξ SOT . Our bilayers exhibit large ξ SOT of up to 1.4 and effective spin Hall conductivity of 0.9 ×10 5 (ℏ/2e)Ω –1 ⁢m –1 . In our bilayers, we observe unidirectional magnetoresistance and current-induced magnetization switching with a low critical current density of 1.38 ×10 10 A/m 2 at room temperature. Finally, our results are promising for heterostructures combining technologically relevant CoFeB with high spin-orbit-coupling oxides.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Field-free deterministic switching of all–van der Waals spin-orbit torque system above room temperature

Two-dimensional van der Waals (vdW) magnetic materials hold promise for the development of high-density, energy-efficient spintronic devices for memory and computation. Recent breakthroughs in material discoveries and spin-orbit torque control of vdW ferromagnets have opened a path for integration of vdW magnets in commercial spintronic devices. However, a solution for field-free electric control of perpendicular magnetic anisotropy (PMA) vdW magnets at room temperatures, essential for building compact and thermally stable spintronic devices, is still missing. Here, we report a solution for the field-free, deterministic, and nonvolatile switching of a PMA vdW ferromagnet, Fe 3 GaTe 2 , above room temperature (up to 320 K). We use the unconventional out-of-plane anti-damping torque from an adjacent WTe 2 layer to enable such switching with a low current density of 2.23 × 10 6 A cm –2 . This study exemplifies the efficacy of low-symmetry vdW materials for spin-orbit torque control of vdW ferromagnets and provides an all-vdW solution for the next generation of scalable and energy-efficient spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin-orbit torque

Here the electrical manipulation of magnetization and exchange bias in antiferromagnet/ferromagnet thin films could be of use in the development of the next generation of spintronic devices. Current-controlled magnetization switching can be driven by spin-orbit torques generated in an adjacent heavy metal layer, but these structures are difficult to integrate with exchange bias switching and tunnelling magnetoresistance measurements. Here, we report the current-induced switching of the exchange bias field in a perpendicularly magnetized IrMn/CoFeB bilayer structure using a spin-orbit torque generated in the antiferromagnetic IrMn layer. By manipulating the current direction and amplitude, independent and repeatable switching of the magnetization and exchange bias field below the blocking temperature can be achieved. The critical current density for the exchange bias switching is found to be larger than that for CoFeB magnetization reversal. X-ray magnetic circular dichroism, polarized neutron reflectometry measurements and micromagnetic simulations show that a small net magnetization within the IrMn interface plays a crucial role in these phenomena.

42 ENGINEERING↗
DOE OSTI2020

Strongly Surface State Carrier‐Dependent Spin–Orbit Torque in Magnetic Topological Insulators

Abstract The topological surface states (TSS) in topological insulators (TIs) can exert strong spin–orbit torque (SOT) on adjacent magnetization, offering great potential in implementing energy‐efficient magnetic memory devices. However, there are large discrepancies among the reported spin Hall angle values in TIs, and its temperature dependence still remains elusive. Here, the spin Hall angle in a modulation‐doped Cr‐Bi x Sb 2− x Te 3 (Cr‐BST) film is quantitatively determined via both transport and optic approaches, where consistent results are obtained. A large spin Hall angle of ≈90 in the modulation‐doped Cr‐BST film is demonstrated at 2.5 K, and the spin Hall angle drastically decreases to 0.3–0.5 as the temperature increases. Moreover, by tuning the top TSS carrier concentration, a competition between the top and bottom TSS in contributing to SOT is observed. The above phenomena can account for the large discrepancies among the previously reported spin Hall angle values and reveal the unique role of TSS in generating SOT.

Che, Xiaoyu↗
DOE OSTI2021

The 20-nm Skyrmion Generated at Room Temperature by Spin-Orbit Torques

The discovery of magnetic skyrmions provides a promising pathway for developing functional spintronic memory and logic devices. Towards the future high-density memory application, nanoscale skyrmions with miniaturized diameters, ideally down to 20 nm are required. Using x-ray magnetic circular dichroism transmission microscopy, nanoscale skyrmions are observed in the [Pt/Co/Ir] 15 multilayer at room temperature. In particular, small skyrmions with minimum diameters approaching 20 nm could be generated by the current-induced spin-orbit torques. Through implementing material specific parameters, the dynamic process of skyrmion generation is further investigated by performing micromagnetic simulations. According to the simulation results, we find that both the tube-like Néel-type skyrmions and the bobber-like Néel-type skyrmions can be electrically generated. In particular, the size of the bobber-like Néel-type skyrmions can be effectively reduced by the spin-orbit torques, which leads to the formation of 20 nm Néel-type skyrmions. In conclusion, our findings could be important for understanding the formation dynamics of nanoscale Néel-type spin textures, skyrmions and bobber in particular, which could also be useful for promoting nanoscale skyrmionic memories and logic devices.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Spin–orbit torque in a three-fold-symmetric bilayer and its effect on magnetization dynamics

Field-free switching of perpendicular magnetization has previously been observed in an epitaxial L1 1 -ordered CoPt/CuPt bilayer and attributed to spin–orbit torque (SOT) arising from the crystallographic 3m point group of the interface. Using a first-principles nonequilibrium Green's function formalism combined with the Anderson disorder model, we calculate the angular dependence of the SOT in a CoPt/CuPt bilayer and find that the magnitude of the 3m SOT is about 20% of the conventional dampinglike SOT. We further study the magnetization dynamics in perpendicularly magnetized films in the presence of 3m SOT and Dzyaloshinskii–Moriya interaction, using the equations of motion for domain wall dynamics and micromagnetic simulations. For systems where strong interfacial DMI results in the Néel character of domain walls, we find that a very large current density is required to achieve deterministic switching, because reorientation of the magnetization inside the domain wall is necessary to induce the switching asymmetry. For thicker films with relatively weak interfacial DMI and the Bloch character of domain walls, deterministic switching is possible at much smaller current densities, which may explain the recent experimental findings.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Study of the perpendicular magnetic anisotropy, spin–orbit torque, and Dzyaloshinskii–Moriya interaction in the heavy metal/CoFeB bilayers with Ir 22 Mn 78 insertion

The perpendicular magnetic anisotropy (PMA), current-induced spin–orbit torques (SOTs), and Dzyaloshinskii–Moriya interaction (DMI) in the as-grown W or Ta/Ir 22 Mn 78 (IrMn)/CoFeB/MgO stacks with varying IrMn layer thicknesses were investigated. The in-plane magnetized W/CoFeB/MgO sample becomes perpendicularly magnetized after inserting the IrMn layer without the requirement of the annealing process. The effective magnetization fields 4π Meff show a nonmonotonic dependence on the IrMn layer thickness, which reaches the maximum in magnitude at a thickness of tIrMn = 0.75 nm. The SOT effective fields corresponding to damping-like and field-like torques decrease with the insertion layer thickness. Moreover, the variation of the IrMn layer thickness leads to the change of the DMI in magnitude and sign change from positive (favoring right-handed chirality) to negative (favoring left-handed chirality). The realization of changing the PMA, SOTs, and DMI by inserting the IrMn layer provides more flexibility in the design of spintronic devices.

Physics↗
DOE OSTI2021

Ion beam etching dependence of spin-orbit torque memory devices with switching current densities reduced by Hf interlayers

We report on the fabrication of nanoscale, three-terminal in-plane spin–orbit torque switching devices with low switching current densities. Critical parameters in the fabrication process, including the ion beam etching angle and time, were optimized to avoid fabrication defects and improve device yield. Measurements of the magnetic field and current-induced switching behavior of the tunnel junctions demonstrate a sensitivity to the nanopillar aspect ratio, which dictates the nanopillars’ anisotropy and thermal stability. Additionally, we show that the current density required for switching can be reduced and the device thermal stability increased by inserting Hf interlayers into the heterostructure. Micromagnetic simulations are generally consistent with the experimentally observed switching behavior, suggesting an increase in the interfacial perpendicular anisotropy at the CoFeB/MgO interface and the reduction in the Dzyaloshinskii–Moriya interaction at the W/CoFeB interface by the Hf interlayers.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Spin and Charge Interconversion in Dirac-Semimetal Thin Films

We use spin torque ferromagnetic resonance and ferromagnetic-resonance-driven spin pumping to detect spin-charge interconversion at room temperature in heterostructure devices that interface an archetypal Dirac semimetal, Cd 3 As 2 , with a metallic ferromagnet, Ni 0.80 Fe 0.20 (permalloy). Angle-resolved photoemission directly reveals the Dirac-semimetal nature of the samples prior to device fabrication and high-resolution transmission electron microscopy is used to characterize the crystalline structure and the relevant heterointerfaces. We find that the spin-charge interconversion efficiency in Cd 3 As 2 /permalloy heterostructures is comparable to that in heavy metals and that it is enhanced by the presence of an interfacial oxide. Spin torque ferromagnetic resonance measurements reveal an in-plane spin polarization regardless of an oxidized or pristine interface. We discuss the underlying mechanisms for spin-charge interconversion by comparing our results with first principles calculations and conclude that extrinsic mechanisms dominate the observed phenomena. Our results indicate a need for caution in interpretations of spin-transport and spin-charge conversion experiments in Cd 3 As 2 devices that seek to invoke the role of topological Dirac and Fermi arc states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Picosecond spin-orbit torque–induced coherent magnetization switching in a ferromagnet

Electrically controllable nonvolatile magnetic memories show great potential for the replacement of conventional semiconductor-based memory technologies. Here, we experimentally demonstrate ultrafast spin-orbit torque (SOT)-induced coherent magnetization switching dynamics in a ferromagnet. We use an ultrafast photoconducting switch and a coplanar strip line to generate and guide a ~9-picosecond electrical pulse into a heavy metal/ferromagnet multilayer to induce ultrafast SOT. We then use magneto-optical probing to investigate the magnetization dynamics with sub-picosecond resolution. Ultrafast heating by the approximately 9 picosecond current pulse induces a thermal anisotropy torque which, in combination with the damping-like torque, coherently rotates the magnetization to obtain zero-crossing of magnetization in ~70 picoseconds. A macro-magnetic simulation coupled with an ultrafast heating model agrees well with the experiment and suggests coherent magnetization switching without any incubation delay on an unprecedented time scale. Our work proposes a unique magnetization switching mechanism toward markedly increasing the writing speed of SOT magnetic random-access memory devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Strongly heat-assisted spin–orbit torque switching of a ferrimagnetic insulator

Ferrimagnetic insulators promise low-power and high-speed spintronic applications, thanks to their insulating nature and fast dynamics near compensation points. In a ferrimagnetic insulator/heavy metal heterostructure, we investigate field- and current-induced magnetization switching at various temperatures and observe distinct magnetization switching behaviors owing to spin-orbit torque (SOT) and heating effect. We have realized SOT switching across the magnetization compensation temperature and discovered that the SOT switching is strongly heat-assisted: the temperature is always above the compensation temperature while the SOT switching happens in our case. Moreover, we show that the SOT efficiency is strongly magnetization-dependent by characterizing the current dependence of SOT efficiency and explaining the anomalous SOT switching back phenomena in the presence of a titled external field. Our results reveal the critical role of Joule heating on the dynamics of magnetic insulators and pave the way for the application of spintronic devices based on magnetic insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Coexistence of unconventional spin Hall effect and antisymmetric planar Hall effect in IrO 2

Crystal symmetry plays an important role in the Hall effects. Unconventional spin Hall effect (USHE), characterized by Dresselhaus and out-of-plane spins, has been observed in materials with low crystal symmetry. Recently, antisymmetric planar Hall effect (APHE) was discovered in rutile RuO 2 and IrO 2 (101) thin films, which also exhibit low crystal symmetry. In this study, we report the observation of both USHE and APHE in IrO 2 (111) films, using spin-torque ferromagnetic resonance and harmonic Hall measurements, respectively. Notably, the unconventional spin-torque efficiency from Dresselhaus spin was more than double that of a previous report. Additionally, the temperature dependence of APHE suggests that it arises from the Lorentz force, constrained by crystal symmetry. Here, symmetry analysis supports the coexistence of USHE and APHE and demonstrates that both originate from the crystal symmetry of IrO 2 (111), paving the way for a deeper understanding of Hall effects and related physical phenomena.

Crystal structure↗