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Results for “spin qubits”
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Guiding diamond spin qubit growth with computational methods
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Single-spin qubit magnetic spectroscopy of two-dimensional superconductivity
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Repetitive Quantum Nondemolition Measurement and Soft Decoding of a Silicon Spin Qubit
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Repetitive Readout and Real-Time Control of Nuclear Spin Qubits in 171 Yb Atoms
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Tin as a nuclear spin qubit in silicon
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Machine learning Automation of Spin Qubit Tuning
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Effects of electron-nuclear spin interaction on electron-spin qubit operations
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Dangling Bonds as Possible Contributors to Charge Noise in Silicon and Silicon–Germanium Quantum Dot Qubits
Spin qubits based on Si and Si 1–x Ge x quantum dot architectures exhibit among the best coherence times of competing quantum computing technologies, yet they still suffer from charge noise that limit their qubit gate fidelities. Identifying the origins of these charge fluctuations is therefore a critical step toward improving Si quantum-dot-based qubits. Here, we use hybrid functional calculations to investigate possible atomistic sources of charge noise, focusing on charge trapping at Si and Ge dangling bonds (DBs). We evaluate the role of global and local environment in the defect levels associated with DBs in Si, Ge, and Si 1–x Ge x alloys, and consider their trapping and excitation energies within the framework of configuration coordinate diagrams. We additionally consider the influence of strain and oxidation in charge-trapping energetics by analyzing Si and GeSi DBs in SiO 2 and strained Si layers in typical Si 1–x Ge x quantum dot heterostructures. Our results identify that Ge dangling bonds are more problematic charge-trapping centers both in typical Si 1–x Ge x alloys and associated oxidation layers, and they may be exacerbated by compositional inhomogeneities. In conclusion, these results suggest the importance of alloy homogeneity and possible passivation schemes for DBs in Si-based quantum dot qubits and are of general relevance to mitigating possible trap levels in other Si, Ge, and Si 1–x Ge x -based metal-oxide-semiconductor stacks and related devices.
Dephasing and error dynamics affecting a singlet-triplet qubit during coherent spin shuttling
Quantum information transport over micron to millimeter scale distances is critical for the operation of practical quantum processors based on spin qubits. One method of achieving a long-range interaction is by coherent electron spin shuttling through an array of silicon quantum dots. In order to execute many shuttling operations with high fidelity, it is essential to understand the dynamics of qubit dephasing and relaxation during the shuttling process in order to mitigate them. However, errors arising after many repeated shuttles are not yet well documented. Here, we probe decay dynamics contributing to dephasing and relaxation of a singlet-triplet qubit during coherent spin shuttling over many N repeated shuttle operations, in a small external magnetic field B 0 ≈ 0−10 mT, and in the absence of a micromagnet. We find that losses are dominated by magnetic dephasing, most visible for small N < 10 3 . However, incoherent spin-flip type shuttle errors become evident for large N > 10 3 . Additionally, we estimate shuttle error rates below 10 −4 out to at least N = 10 3 , representing an encouraging figure for future implementations of spin shuttling to entangle distant qubits.
A silicon singlet–triplet qubit driven by spin-valley coupling
Spin–orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar striplines. Here, we demonstrate a singlet–triplet qubit operating mode that can drive qubit evolution at frequencies in excess of 200 MHz. This approach offers a means to electrically turn on and off fast control, while providing high logic gate orthogonality and long qubit dephasing times. We utilize this operational mode for dynamical decoupling experiments to probe the charge noise power spectrum in a silicon metal-oxide-semiconductor double quantum dot. In addition, we assess qubit frequency drift over longer timescales to capture low-frequency noise. We present the charge noise power spectral density up to 3 MHz, which exhibits a 1/ f α dependence consistent with α ~ 0.7, over 9 orders of magnitude in noise frequency.
Electrically tuned hyperfine spectrum in neutral Tb( II )(Cp iPr5 ) 2 single-molecule magnet
Molecular spin qubits with long spin coherence time as well as non-invasive operation methods on such qubits are in high demand. It was shown that both molecular electronic and nuclear spin levels can be used as qubits. In solid state systems with dopants, an electric field was shown to effectively change the spacing between the nuclear spin qubit levels when the electron spin density is high at the nucleus of the dopant. Inspired by such solid-state systems, we propose that divalent lanthanide (Ln) complexes with an unusual electronic configuration of Ln 2+ have a strong interaction between the Ln nuclear spin and the electronic degrees of freedom, which renders electrical tuning of the interaction. Furthermore, as an example, we study electronic structure and hyperfine interaction of the 159 Tb nucleus in a neutral Tb(II)(Cp iPr5 ) 2 single-molecule magnet (SMM), which exhibits unusually long magnetization relaxation time, using the complete active space self-consistent field (CASSCF) method with spin–orbit interaction included within the restricted active space state interaction (RASSI). Our calculations show that the low-energy states arise from 4f 8 (6s,5d z 2 ) 1 , 4f 8 (5d x 2 -y 2 ) 1 , and 4f 8 (5d xy ) 1 configurations. We compute the hyperfine interaction parameters and the electronic–nuclear spectrum within our multiconfigurational approach. We find that the hyperfine interaction is about one order of magnitude greater than that for Tb(III)Pc 2 SMMs. This stems from the strong Fermi contact interaction between the Tb nuclear spin and the electron spin density at the nucleus that originates from the occupation of the (6s,5d) orbitals. We also uncover that the response of the Fermi contact term to electric field results in electrical tuning of the electronic–nuclear level separations. This hyperfine Stark effect may be useful for applications of molecular nuclear spins for quantum computing.
High-fidelity entanglement and coherent multi-qubit mapping in an atom array
Neutral atoms in optical tweezer arrays possess broad applicability for quantum technologies, such as computing, analogue simulation and metrology. The atomic species ytterbium-171 is able to host multiple types of qubits, making it a strong candidate for bridging various applications of tweezer arrays. Realizing this potential requires high-fidelity generation and transfer of many-body entanglement between these distinct qubit degrees of freedom. Here, in this study, we demonstrate the creation and coherent mapping of entangled quantum states across multiple qubits in ytterbium-171 tweezer arrays. We map entangled states onto the optical clock qubit from the nuclear spin qubit or the Rydberg qubit. We coherently transfer Z 2 -ordered Greenberger–Horne–Zeilinger states of up to 20 atoms from the interacting Rydberg manifold to the metastable nuclear spin manifold. Furthermore, we find that clock-qubit-based spin detection, when applied to Rydberg and nuclear spin qubits, facilitates atom-loss-detectable qubit measurements and Rydberg decay detection. This enables delayed-erasure detection, yielding an error-detected two-qubit gate fidelity of 99.78(4)% in metastable qubits. These results establish a versatile architecture that advances multiple fields of quantum information science while also establishing bridges between them.
Enhancing the Optically Detected Magnetic Resonance Signal of Organic Molecular Qubits
In quantum information science and sensing, electron spins are often purified into a specific polarization through an optical-spin interface, a process known as optically detected magnetic resonance (ODMR). Diamond-NV centers and transition metals are both excellent platforms for these so-called color centers, while metal-free molecular analogues are also gaining popularity for their extended polarization lifetimes, milder environmental impacts, and reduced costs. In our earlier attempt at designing such organic high-spin π-diradicals, we proposed to spin-polarize by shelving triplet M S = ±1 populations as singlets. This was recently verified by experiments albeit with low ODMR contrasts of <1% at temperatures above 5 K. In this work, we propose to improve the ODMR signal by moving singlet populations back into the triplet M S = 0 sublevel, designing a true carbon-based molecular analogue to the NV center. Our proposal is based upon transition-orbital and group-theoretical analyses of beyond-nearest-neighbor spin–orbit couplings, which are further confirmed by ab initio calculations of a realistic trityl-based radical dimer. Microkinetic analyses point toward high ODMR contrasts of around 30% under experimentally feasible conditions, a stark improvement from previous works. Finally, in our quest toward ground-state optically addressable molecular spin qubits, we exemplify how our symmetry-based design avoids Zeeman-induced singlet–triplet mixings, setting the scene for realizing electron spin qubit gates.
Improved Charge Sensing on a SiMOS Double Quantum Dot using a Cryogenic Skipper Readout ASIC (Quandarum)
Major outstanding questions in high-energy physics such as the nature of dark matter and the existence of interactions beyond the standard model require new measurement techniques which are extremely sensitive to minute electromagnetic fields. An array of entangled spin qubits is a promising system for building novel detectors due to its combination of sensitivity and controllability. CMOS-based electron spin qubits, which have demonstrated the operational requirements for fault-tolerant quantum computing [1], offer a particular opportunity due to their compatibility with classical electronics, which allows the leveraging of decades of development of low-noise cryogenic detectors for physics. In this work, we combine a SiMOS double-quantum dot device architecture with a state-of-the-art cryoelectronic readout circuit [2-3] aimed to demonstrate improved charge readout using a single-electron transistor (SET). We identify the design characteristics for an SET that facilitate the use of on-chip classical electronics as a low-power, high-bandwidth first amplification stage and explore opportunities for sensor-readout co-design to minimize noise. This is the first of a series of steps to demonstrate high-fidelity readout of a large array of spin qubit with enough sensitivity to probe processes of interest for the investigation of beyond-standard-model physics.