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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Direct synthesis of ultrathin SOI structure by extremely low-energy oxygen implantation

We performed extremely low-energy {sup 16}O{sup +} implantation at 10 keV (R{sub p} ∼ 25 nm) followed by annealing aiming at directly synthesizing an ultrathin Si layer separated by a buried SiO{sub 2} layer in Si(001) substrates, and then investigated feasible condition of recrystallization and stabilization of the superficial Si and the buried oxide layer by significantly low temperature annealing. The elemental compositions were analyzed by Rutherford backscattering (RBS) and secondary ion mass spectroscopy (SIMS). The crystallinity of the superficial Si layer was quantitatively confirmed by ananlyzing RBS-channeling spectra. Cross-sectional morphologies and atomic configurations were observed by transmission electron microscope (TEM). As a result, we succeeded in directly synthesizing an ultrathin single-crystalline silicon layer with ≤20 nm thick separated by a thin buried stoichiometric SiO{sub 2} layer with ≤20 nm thick formed by extremely low-energy {sup 16}O{sup +} implantation followed by surprisingly low temperature annealing at 1050{sup ∘} C.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

SOI-MEMS Bulk Piezoresistive Displacement Sensor: A Comparative Study of Readout Circuits

Performance of several readout circuits, when applied to a MEMS-based bulk piezoresistive displacement sensor is compared in this study. The sensor comprises a pair of tilted clamped-guided silicon beams whose bulk piezoresistivity is used for displacement sensing. Wheatstone half-bridge, constant-voltage, and constant-current circuits are implemented to measure resistance changes of this sensor. We report full characterization of the sensor with these circuits and explore the sensor’s important characteristics such as linearity, bandwidth, and noise. The results reveal that the constant-current circuit provides the highest sensitivity at equal-power bias condition. Here, we find that the resolution of the sensor is degraded from 1.6 nm with the Wheatstone half-bridge and constant-voltage circuits to about 4.2 nm with the constant-current configuration. In the frequency domain, the sensor captures the full dynamics of the MEMS nanopositioner up to 20 kHz with all readout circuits.

42 ENGINEERING↗
DOE OSTI2017

A Pixel Pitch-Matched Ultrasound Receiver for 3-D Photoacoustic Imaging With Integrated Delta-Sigma Beamformer in 28-nm UTBB FD-SOI

This study presents a pixel pitch-matched readout chip for 3-D photoacoustic (PA) imaging, featuring a dedicated signal conditioning and delta-sigma modulation integrated within a pixel area of 250 μm by 250 μm. The proof-of-concept receiver was implemented in an STMicroelectronics's 28-nm Fully Depleted Silicon On Insulator technology, and interfaces to a 4 × 4 subarray of capacitive micromachined ultrasound transducers (CMUTs). The front-end signal conditioning in each pixel employs a coarse/fine gain tuning architecture to fulfill the 90-dB dynamic range requirement of the application. The employed delta-sigma beamforming architecture obviates the need for area-consuming Nyquist ADCs and thereby enables an efficient in-pixel A/D conversion. The per-pixel switched-capacitor ΔΣ modulator leverages slewing-dominated and area-optimized inverter-based amplifiers. It occupies only 1/4th of the pixel, and its area compares favorably with state-of-the-art designs that offer the same SNR and bandwidth. The modulator's measured peak signal-to-noise-and-distortion ratio is 59.9 dB for a 10-MHz input bandwidth, and it consumes 6.65 mW from a 1V supply. The overall subarray beamforming approach improves the area per channel by 7.4 times and the single-channel SNR by 8 dB compared to prior art with similar delay resolution and power dissipation. Finally, the functionality of the designed chip was evaluated within a PA imaging experiment, employing a flip-chip bonded 2-D CMUT array.

3-D photoacoustic (PA) imaging↗
DOE OSTI2021

Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology

Semiconductor–insulator interfaces play an important role in the reliability of integrated devices; however, the impact of these interfaces on the physical mechanisms related to single-event effects has not been previously reported. We present experimental data that demonstrate that single-event charge collection can be impacted by changes in interface quality. The experimental data, combined with simulations, show that single-event response may depend on surface recombination at interface defects. The effect depends on strike location and increases with increasing linear energy transfer (LET). Surface recombination can affect single-event charge collection for interfaces with a surface recombination velocity (SRV) of 1000 cm/s and is a dominant charge collection mechanism with SRV >10 5 cm/s.

42 ENGINEERING↗
DOE OSTI2021

Development of FD-SOI cryogenic amplifier for application to STJ readout in COBAND project

The COBAND is a project of an experimental search for the cosmic background neutrino decay [1] – [9] . The existence of the cosmic background neutrino is predicted as a relic of the big bang in the theoretical cosmology. Since the neutrino is found to have mass generations and mixing between them, a heavier neutrino is possible to decay to a lighter neutrino with a far-infrared photon, even though its lifetime is expected to be much longer than the age of the universe [10] . However, neither the cosmic background neutrino nor the neutrino decay is yet established experimentally. Only a lower limit in the order of 10 12 years is given on the heaviest neutrino lifetime. We, thus, search for photons which come from the cosmic background neutrino decays. The photons from the cosmic background neutrino decays are expected to shape a spectrum of a unique signature with a sharp edge at a wavelength of around 50μm depending on the heaviest neutrino mass. To identify the signature against the overwhelming zodiacal emission foreground as well as the cosmic infrared background, the photodetectors are required to have an ability to measure the FIR spectrum around 50pm with sufficient precision. Thus, we aim at developing a photodetector with capability of FIR photon-by-photon spectrometry. We employ superconducting tunnel junction (STJ) sensors in combination with cryogenic amplifiers for signal readout to maximize the potential of STJ.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Biosensor properties of SOI nanowire transistors with a PEALD Al{sub 2}O{sub 3} dielectric protective layer

The properties of protective dielectric layers of aluminum oxide Al{sub 2}O{sub 3} applied to prefabricated silicon-nanowire transistor biochips by the plasma enhanced atomic layer deposition (PEALD) method before being housed are studied depending on the deposition and annealing modes. Coating the natural silicon oxide with a nanometer Al{sub 2}O{sub 3} layer insignificantly decreases the femtomole sensitivity of biosensors, but provides their stability in bioliquids. In deionized water, transistors with annealed aluminum oxide are closed due to the trapping of negative charges of <(1–10) × 10{sup 11} cm{sup −2} at surface states. The application of a positive potential to the substrate (V{sub sub} > 25 V) makes it possible to eliminate the negative charge and to perform multiple measurements in liquid at least for half a year.

36 MATERIALS SCIENCE↗
DOE OSTI2018

The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

In this paper, we simulated the dependence of the effect of reducing the drain-induced barrier lowering on the thickness of a buried oxide layer in a finned (vertical) metal-oxide-semiconductor field effect transistor (FinFET) based on silicon-on-insulator technology. Three shapes of the fin with the rectangle, trapezoid, and triangle cross sections were considered. The drain-induced barrier lowering effect significantly depends on both the fin shape and the thickness of the buried oxide layer. The smallest drain-induced barrier lowering effect occurs when the thickness of the buried oxide layer is small for the fin of a triangular shape. This behavior of the drain-induced barrier lowering effect is strongly correlated with the behavior of the parasitic capacitance between a gate and a source.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2003

"Land-Cover Conversion in Amazonia, The Role of ENV" Ironment and Substrate composition in Modifying SOI

LBA research from the first phase of LBA focused on three broad categories: 1) mapping land cover and quantifying rates of change, persistence of pasture, and area of recovering forest; 2) evaluating the role of environmental factors and land-use history on soil biogeochemistry; and 3) quantifying the natural and human controls on stream nutrient concentrations. The focus of the research was regional, concentrating primarily in the state of RondBnia, but also included land-cover mapping in the vicinity of Maraba, Para, and Manaus, Amazonas. Remote sensing analysis utilized Landsat Thematic Mapper (TM) and Multispectral Scanner (MS S) data to map historical patterns of land-cover change. Specific questions addressed by the remote sensing component of the research included: 1) what is the areal extent of dominant land-cover classes? 2) what are the rates of change of dominant land cover through processes of deforestation, disturbance and regeneration? and 3) what are the dynamic properties of each class that characterize temporal variability, duration, and frequency of repeat disturbance? Biogeochemical analysis focused on natural variability and impacts of land-use/land-cover changes on soil and stream biogeochemical properties at the regional scale. An emphasis was given to specific soil properties considered to be primary limiting factors regionally, including phosphorus, nitrogen, base cations and cation-exchange properties. Stream sampling emphasized the relative effects of the rates and timing of land-cover change on stream nutrients, demonstrating that vegetation conversion alone does not impact nutrients as much as subsequent land use and urbanization.

Roberts, Dar A.↗
NASA NTRS1999

MEMS Using SOI Substrate

At NASA, the focus for smaller, less costly missions has given impetus for the development of microspacecraft. MicroElectroMechanical System (MEMS) technology advances in the area of sensor, propulsion systems, and instruments, make the notion of a specialized microspacecraft feasible in the immediate future. Similar to the micro-electronics revolution,the emerging MEMS technology offers the integration of recent advances in micromachining and nanofabrication techniques with microelectronics in a mass-producible format,is viewed as the next step in device and instrument miniaturization. MEMS technology offers the potential of enabling or enhancing NASA missions in a variety of ways. This new technology allows the miniaturization of components and systems, where the primary benefit is a reduction in size, mass and power. MEMS technology also provides new capabilities and enhanced performance, where the most significant impact is in performance, regardless of system size. Finally,with the availability of mass-produced, miniature MEMS instrumentation comes the opportunity to rethink our fundamental measurement paradigms. It is now possible to expand our horizons from a single instrument perspective to one involving multi-node distributed systems. In the distributed systems and missions, a new system in which the functionality is enabled through a multiplicity of elements. Further in the future, the integration of electronics, photonics, and micromechanical functionalities into "instruments-on-a-chip" will provide the ultimate size, cost, function, and performance advantage. In this presentation, I will discuss recent development, requirement, and applications of various MEMS technologies and devices for space applications.

Tang, Tony K.↗