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Integrated Silicon Fourier Transform Spectrometer with Broad Bandwidth and Ultra‐High Resolution
An ultra-high resolution Fourier transform spectrometer (FTS) realized in silicon photonic platform that can operate with broad band, narrow band as well as a combination of broad band and narrow band signals is reported. The ultra-high resolution of the spectrometer is achieved by exploiting multiple techniques: a Michelson interferometer (MI) structure to increase the optical path delay (OPD), a hybrid waveguide design to reduce insertion loss, an optimized heater and air trenches to achieve higher thermal efficiency. Here, to further increase the OPD of the spectrometer to increase its resolution, a novel multiple interferometers approach is employed which combines balanced MI with N statically imbalanced MIs, thereby increasing the OPD of a single MI by factor of N + 1. An FTS spectrometer consisting of N = 2 such MIs is fabricated and experimentally characterized using unknown broad bandwidth input signal spectra of about 180 nm centered around 1550 nm, a narrow line laser input signal, and a combination of broad and narrow band signals demonstrating spectral resolution of about 0.16 nm.
Recombination and Resistive Losses of Transferred Foil Contacts for Silicon Heterojunction Solar Cells
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Measurement of Residual Stress in Silicon Carbide Fibers of Tubular Composites Using Raman Spectroscopy
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Diazonium-Functionalized Silicon Hybrid Photoelectrodes: Film Thickness and Composition Effects on Photoelectrochemical Behavior
Aryl diazonium electrografting is a powerful method for imparting molecular functionality onto various substrates by forming a stable carbon-surface covalent bond. While the high reactivity of the aryl radical intermediate makes this method fast and reliable, it can also lead to the formation of an insulating and disordered multilayer film. These thick films affect electrochemical performance, especially for semiconductor substrates used in photoelectrochemical applications. For this work we studied the effects of film thickness and composition by electrografting in situ-generated aminobenzene diazonium salts onto both n-type and p-type silicon electrodes at fixed potentials. Next, we attached ferrocene to the amine-terminated films and probed their (photo)electrochemical behavior. Cyclic voltammetry measurements showed decreased electrochemical reversibility with increasing diazonium film thickness; this reversibility was restored when ferrocene was incorporated throughout the film with a layer-by-layer deposition process. Finally, we compared the behavior of dark p-type electrodes to n-type photoelectrodes and observed differences in the electrochemical reversibility that we attribute to the change in potential drop across the two interfaces.
Methyl Termination of p-Type Silicon Enables Selective Photoelectrochemical CO 2 Reduction by a Molecular Ruthenium Catalyst
Methyl-terminated p-type silicon photoelectrodes selectively drive CO 2 reduction by a homogeneous [Ru(tpy)(Mebim-py)(NCCH 3 )] 2+ catalyst (tpy = 2,2′:6′,2″-terpyridine, Mebim-py = 1-methylbenzimidazol-2-ylidene-3-(2′-pyridine)). A 460 mV photovoltage is quantified for the photoelectrode. Under 1 sun illumination, this system achieves a Faradaic efficiency of 87% for CO at −1.7 V vs Fc +/0 , matching reports of the same catalyst at metallic electrodes operating at −2.1 V. When 5% water is introduced, the CH 3 -terminated Si photoelectrode remains stable, selectivity for CO is retained, and current density increases. Methyl termination suppresses the competitive hydrogen evolution observed for H-terminated Si photoelectrodes, which under the same conditions produce ca. 60% CO and 8% H 2 and have unstable performance. Furthermore, these results establish that a semiconductor photoelectrode can power a molecular CO 2 reduction catalyst without hydrogen evolution by the photoelectrode itself. Methyl termination of p-Si allows CO 2 reduction to kinetically outcompete proton reduction, revealing an important design principle for selective fuel formation.
HOMOGENEOUS JOINING OF SILICON CARBIDE FIBER REINFORCED SILICON CARBIDE MATRIX COMPOSITES
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Temperature dependence of irradiation-induced nanocrystallization in amorphous silicon carbide
Ion irradiation induced nucleation and growth in amorphous SiC at elevated temperatures are investigated in this study. Both as-deposited amorphous and Kr ion irradiation-amorphized SiC films are used for the investigation. Similar behavior of particle precipitation in the two types of the films is observed. It is found that the threshold temperature for nucleation is between 550 and 700 K, which is considerably higher than the critical temperature for full amorphization in SiC irradiated with Kr ions. There is a temperature regime up to at least 900 K, where the growth rates are only weakly dependent of the irradiation temperature. This temperature regime is potentially useful to tailor the size and density of nanocrystalline SiC precipitates by optimizing the ion irradiation conditions.
Finite Element Simulation of Potential-Induced Degradation Kinetics in p-Type Silicon Solar Modules
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Hierarchical 3D Printed Porous Silicones with Porosity Derived from Printed Architecture and Silicone-Shell Microballoons
A method is reported to prepare siloxane microballoons that can be loaded into a direct ink write siloxane ink for 3D printing. The resulting structure is subjected to a solvent removal and supercritical drying process to provide a final printed siloxane having both macroscopic and microscopic porosity. Core-shell particles are generated by an emulsion template and phase separation process. Intra-strand closed-cell porosities can be achieved between 10 and 40 vol% thus facilitating additional compressive strain before lockup. Here short term compression set testing highlights the excellent shape retention properties of these elastomers, which have less than 8% relative compression set under load.
Silicon concentration and pH controls over competitive or simultaneous incorporation of iodate and chromate into calcium carbonate phases
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Time-resolved imaging of microscale dynamics in laser drying of silicon wafers
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Failure progression in the solid electrolyte interphase (SEI) on silicon electrodes
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