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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Enhancing the Electrochemical Performance of Aqueous Processed Li-Ion Cathodes with Silicon Oxide Coatings

Lithium-ion battery cathode materials suffer from bulk and interfacial degradation issues, which negatively affect their electrochemical performance. Oxide coatings can mitigate some of these problems and improve electrochemical performance. However, current coating strategies have low throughput, are expensive, and have limited applicability. In this article, we describe a low-cost and scalable strategy for applying oxide coatings on cathode materials. Here, we report synergistic effects of these oxide coatings on the performance of aqueously processed cathodes in cells. The SiO 2 coating strategy developed herein improved mechanical, chemical, and electrochemical performance of aqueously processed Ni-, Mn- and Co-based cathodes. This strategy can be used on a variety of cathodes to improve the performance of aqueously processed Li-ion cells.

25 ENERGY STORAGE↗
DOE OSTI2020

Restorable Neutralization of Poly(acrylic acid) Binders toward Balanced Processing Properties and Cycling Performance for Silicon Anodes in Lithium-Ion Batteries

Neutralization of poly(acrylic acid) (PAA)-based binders using lithium hydroxide is a common strategy for fabricating silicon anode laminates, which improves rheological properties of slurries toward high-quality electrode laminates. However, the significantly increased basicity causes degradation of Si particles while the irreversible conversion of carboxylic acid groups to lithium carboxylates undermines the binding strength, collectively leading to adverse cycling performance of the fabricated Si anodes. Herein, a novel neutralization process for PAA binders is developed. A weak base, ammonia (NH 3 ), was discovered as a neutralizing agent that still promotes rheological response of binder solutions but results in a reduced pH increase. Interestingly, the resulting ammonium carboxylate groups may cleave during the drying process to restore the neutralized PAA (PAA-NH 3 ) binders to their pristine states. The best-performing composition of 50% neutralization (PAA-50%NH 3 ) provides comparable rheological response as a PAA-Li binder as well as much improved cycling performance. Additionally, the half-cells using the PAA-50%NH 3 binder can deliver 60% capacity retention over 100 cycles at C/3 rate, affording a 23.8% increase compared to PAA-Li half-cells. This restorable neutralization process of PAA binders represents an innovative strategy of mitigating issues from slurry processing of Si particles to achieve concurrent improvements in high-quality lamination and cycling performance.

25 ENERGY STORAGE↗
DOE OSTI2023

In Situ Attenuated Total Reflectance Infrared Spectroelectrochemistry (ATR-IR-SEC) for the Characterization of Molecular Redox Processes on Surface-Proximal Doped Silicon ATR Crystal Working Electrodes

In situ mid-infrared spectroscopy is a powerful technique for understanding the mechanism of CO 2 reduction (CO 2 R) catalysts because it enables the direct detection of catalytic intermediates and products. Moreover, spectroelectrochemistry (SEC), the coupling of spectroscopy with electrochemistry, allows spectroscopic changes to be correlated with applied potentials to reveal potential-dependent intermediates that are often relevant to photoelectrochemical reactions. Hybrid photoelectrodes, comprised of a narrow bandgap semiconductor, like silicon (Si), with a covalently-linked molecular catalyst, are a promising platform for sunlight-driven catalysis, but characterization of the catalytic mechanism(s) is challenging under photoelectrochemical conditions, particularly when the catalyst is present in monolayer or less concentrations. Here, we have developed a new strategy to use multiple-reflection attenuated total reflectance IR spectroscopy (ATR-IR) coupled with electrochemistry to characterize catalysts directly integrated with a semiconductor surface under applied potential. We show that by surface-proximal n-type or p-type doping of the top ~100-200 nm of the crystal surface, Si ATR crystals can be used simultaneously as the internal reflection element and semiconductor working electrode for ATR-IR-SEC measurements. The surface-proximal doping strategy yields a quasi-equipotential surface with excellent infrared transparency that would have been compromised by free carrier absorption if the crystal was uniformly doped. This approach permits the catalytically-active functionalized surface to be directly probed without modification and overcomes signal-to-noise limitations of other strategies that use separately deposited working electrodes on Si ATR crystals. Proof-of-concept ATR-IR-SEC spectra were collected during the reduction and oxidation of monolayers of Re- and Ru-based transition metal carbonyl complexes, respectively, verifying the viability of the technique to probe redox processes associated with CO 2 R catalysts on Si electrode surfaces with high sensitivity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Mitigating Process Induced Degradation in p- and n-Czochralski Silicon Wafers with Tabula Rasa

We report on the bulk properties of of n- and p- type Czochralski silicon (Cz-Si) after a high-temperature annealing process known as Tabula Rasa (TR), which is primarily used to annihilate oxygen precipitates. We find significant differences in n- and p-type substrates as well as a strong dependence on the ambient in the resulting process induced degradation. We attribute this ambient dependence to either injection of interstitials or vacancies into the bulk during TR. Finally, we show that subsequent gettering is enhanced due to the annihilation of oxygen precipitates.

14 SOLAR ENERGY↗
DOE OSTI2022

Low temperature process for diode termination of fully depleted high resistivity silicon radiation detectors that can be used for shallow entrance windows and thinned sensors

Fabrication of vertical diodes for radiation sensing using a low temperature microwave anneal is provided. This kind of anneal allows the back side processing to be performed after the front side processing is done without damaging the front side structures. This enables a simplified fabrication of thinned detectors compared to a conventional silicon on insulator process. Another feature that this technology enables is a thin entrance window for a detector that also serves as the doped diode termination. Such thin entrance windows are especially suitable for detection of low energy radiation.

Kenney, Christopher J.↗
DOE OSTI2020

Research and Development Priorities for Silicon Photovoltaic Module Recycling to Support a Circular Economy

Large-scale deployment of photovoltaic (PV) modules has considerably increased in recent decades. Given an estimated lifetime of 30 years, the challenge of how to handle large volumes of end-of-life PV modules is starting to emerge. In this Perspective, we assess the global status of practice and knowledge for end-of-life management for crystalline silicon PV modules. We focus in particular on module recycling, a key aspect in the circular economy of photovoltaic panels. We recommend research and development to reduce recycling costs and environmental impacts compared to disposal while maximizing material recovery. We suggest that the recovery of high-value silicon is more advantageous than the recovery of intact silicon wafers. This approach requires the identification of contaminants and the design of purification processes for recovered silicon. The environmental and economic impacts of recycling practices should be explored with techno–economic analyses and life-cycle assessments to optimize solutions and minimize trade-offs. As photovoltaic technology advances rapidly, it is important for the recycling industry to plan adaptable recycling infrastructure.

c-Si↗
DOE OSTI2024

Disruptive Silicon Anode Technology for Next-Generation Lithium-Ion Batteries

The National Renewable Energy Laboratory (NREL) has pioneered novel processing technology for silicon nanoparticles (Si NPs) synthesized from plasma-enhanced chemical vapor deposition (PECVD) that will disrupt current lithium-ion battery technology. This revolutionary Si NP-based anode leverages a molecular coating applied to PECVD Si NPs that transforms them into homogeneous colloids suitable for conventional slurry formulation and electrode deposition resulting in delivered capacities of >2000 mAh/g (total electrode mass) at >90 wt% Si content anodes.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2021

Long-Term Degradation of Passivated Emitter and Rear Contact Silicon Solar Cell under Light and Heat

Advanced designs enable high-efficiency solar cells; however, more complex structures create new long-term stability concerns. Herein, the long-term degradation processes affecting advanced silicon solar cells using laboratory-based illumination and heating over hundreds of hours are investigated. The activation energy for the degradation of voltage is estimated and the degradation rates to normal solar cell operating temperature ranges are extrapolated. The cell degradation observed at high temperatures in the lab is kinetically similar to the process affecting field-deployed modules contributing to 0.37% year-1 of annualized degradation. Electroluminescence and photoluminescence mapping show that the degradation is dominated by minority carrier lifetime reduction. Suns-open-circuit voltage and light beam-induced current results indicate that the degradation could result from passivation degradation at the surface or defect formation in the near-subsurface region, leading to increased minority carrier recombination. This work highlights a long-term degradation process under elevated temperature and illumination that may continue to affect cells in an irreversible manner that is separate from recoverable light-induced degradation and light- and elevated temperature-induced degradation.

14 SOLAR ENERGY↗
DOE OSTI2020

Search for New Bosons in Gluon-Gluon and Vector Boson Fusion Processes at the LHC and Development of Silicon Module Assembly Techniques for the CMS High Granularity Calorimeter

A search for heavy resonances decaying to a pair of vectors bosons is presented which utilizes events in which a hadronically decaying Z or W boson is identified using jet substructure techniques and large missing transverse momentum is found. Data analyzed were recorded by the Compact Muon Solenoid experiment at the CERN Large Hadron Collider in 2016, 2017, and 2018, and correspond to 137 fb$^{-1}$ . The events are categorized as having arisen from Vector Boson Fusion process or not, and are characterized by their transverse mass distribution. The standard model backgrounds are estimated based on observed yields in control regions. No excess of events above the expected SM background are observed and limits are placed on the production cross section of Radion (spin-0), Wprime (spin-1) and Bulk graviton (spin2) particles. In adiditon, the high luminosity LHC and the CMS HGCAL upgrade are also presented. The assembly techniques and various tests for the Silicon module and the cassette are discussed.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Furthering Advancement to Address Tough Problems Facing the Solar Energy Industry, Spurring the Next Wave of Solar Technology Innovations through Three Progressive Challenges and Cash Incentives (Final Report)

The American-Made Solar Prize is a prize competition from the U.S. Department of Energy that is designed to revitalize U.S. solar manufacturing. The competition aims to support the growth of U.S. solar manufacturing and reenergize American energy innovation by tapping into American's competitive spirit and the nation's unparalleled innovation ecosystem leveraging national labs, incubators, facilities and more. National Renewable Energy Lab (NREL) will provide technical and business advisement to the noted Solar Prize finalists. The CRADA Participant is in the process of developing a new continuous process for making silicon wafers for solar cells in a novel approach to horizontal ribbon growth. Under this CRADA, NREL will characterize the chemical, electrical, and crystallographic properties of the as-produced wafers to and work with the CRADA Participant to improve and modify processing conditions.

14 SOLAR ENERGY↗
DOE OSTI2024

Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn 3 , sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Recovery of Glass and Silicon Solar Cells from Si-Modules Through Laser Processing

This study demonstrates an innovative and environmentally friendly laser-based approach for the efficient recovery of glass and silicon solar cells, allowing the recycling of photovoltaic modules. The methodology involves the use of a high-power pulsed laser beam focusing at various interfaces within the modules. Specifically, the delivery of ultra-short pulse laser energy at the interfaces of glass and polymeric encapsulants, as well as at the encapsulants and silicon solar cells, facilitates the debonding of polymers from both glass and silicon cell surfaces. The debonding occurs through photothermal, ablation, chemical modification, and localized heat generation. The research successfully demonstrates the recovery of glass from commercial mini solar modules of size 11.5 x 6.8 cm 2 and a silicon wafer of size 3.0x1.6 cm 2 . Ongoing efforts aim to extend the effectiveness of this laser-based methodology to comprehensively recycle larger-size components. This innovative approach holds promise for addressing environmental concerns associated with the disposal of solar modules, contributing to sustainable practices in the renewable energy sector.

glass↗
DOE OSTI2020

SiO 2 Is Wasted Space in Single-Nanometer-Scale Silicon Nanoparticle-Based Composite Anodes for Li-Ion Electrochemical Energy Storage

The electrode processing conditions of silicon-based composite anodes play a pivotal role in the resulting interfacial chemical speciation and, thus, the electrochemical cycling behavior of the electrode. Systematically investigating how small chemical changes to the surface of the silicon nanoparticle (NP) affect larger, electrode-level properties is a strategy that will inform design principles to maximize electrode energy density and extend electrode lifetime. Here, we incorporate silicon nanoparticles (NPs) with an average diameter of 5.5 nm synthesized from the gas phase through a nonthermal plasma method into composite anode half-cell coin cells. We perform chemistry to functionalize the native hydride-terminated silicon NP surface with N-methylpyrrolidone (NMP) to improve slurry properties and reduce the silicon reactivity prior to composite electrode fabrication. We construct composite electrodes from these silicon NPs and observe an 86% capacity retention over 100 cycles at a rate of C/5, with an initial silicon specific capacity of 2600 mAh/g. We expose the same Si NPs to water that completely oxidizes these small-diameter NPs to SiO 2 and find that the SiO 2 NPs in the same electrode configuration exhibit no obvious lithium alloying capacity in the electrochemical potential range of lithium silicide alloy formation. As this result stands in contrast to existing literature, we provide a discussion on the origin of the discrepancies.

25 ENERGY STORAGE↗
DOE OSTI2021

Origin of mechanical and dielectric losses from two-level systems in amorphous silicon

Amorphous silicon contains tunneling two-level systems, which are the dominant energy loss mechanisms for amorphous solids at low temperatures. These two-level systems affect both mechanical and electromagnetic oscillators and are believed to produce thermal and electromagnetic noise and energy loss. However, it is unclear whether the two-level systems that dominate mechanical and dielectric losses are the same; the former relies on the coupling between phonons and two-level systems, with an elastic field coupling constant γ while the latter depends on a two-level systems dipole moment p0, which couples to the electromagnetic field. Mechanical and dielectric loss measurements as well as structural characterization were performed on amorphous silicon thin films grown by electron beam deposition with a range of growth parameters. Samples grown at 425 °C show a large reduction of mechanical loss (34 times) and a far smaller reduction of dielectric loss (2.3 times) compared to those grown at room temperature. Additionally, mechanical loss shows lower loss for thicker films, while dielectric loss shows lower loss for thinner films. Overall, analysis of these results indicate that mechanical loss correlates with atomic density, while dielectric loss correlates with dangling-bond density, suggesting a different origin for these two energy dissipation processes in amorphous silicon.

36 MATERIALS SCIENCE↗
DOE OSTI2025

High-Throughput In-Line Deposition of Silicon Oxide for Polycrystalline Silicon Passivating Contacts

Polycrystalline silicon passivating contacts rely on an ultrathin (1–2 nm) silicon oxide layer to minimize recombination at the wafer/oxide interface and regulate dopant diffusion. Traditionally formed by thermal or chemical oxidation, this oxide is herein replaced by silicon oxide deposited via aerosol impact-driven assembly (AIDA), enabling high wafer-per-hour throughput and precise thickness control. In this study, we show that AIDA coatings conformally cover planar or textured substrates and achieve a SiO x /poly-Si(n) structure with an implied open-circuit voltage (iV oc = 726 mV) and contact saturation current density (J 0 = 8.8 fA/cm 2 ). Furthermore, annealing AIDA SiO x films at elevated temperatures desorbs hydroxyl groups while the stoichiometry transitions toward SiO 2 , improving passivation quality. Together, these results highlight AIDA’s potential for scalable, high-throughput manufacturing of advanced passivating contacts, offering a cost-effective alternative to conventional low-pressure chemical vapor deposition and plasma-enhanced chemical vapor deposition-based silicon and oxide processes.

TOPcon↗
DOE OSTI2020

Reaction of BCl 3 with H- and Cl-terminated Si(100) as a pathway for selective, monolayer doping through wet chemistry

The reaction of boron trichloride with the H and Cl-terminated Si(100) surfaces was investigated to understand the interaction of this molecule with the surface for designing wet-chemistry based silicon surface doping processes using a carbon- and oxygen-free precursor. The process was followed with X-ray photoelectron spectroscopy (XPS). Within the reaction conditions investigated, the reaction is highly effective on Cl-Si(100) for temperatures below 70°C, at which point both surfaces react with BCl$_3$. The XPS investigation followed the formation of a B 1s peak at 193.5 eV corresponding to (B-O)$_x$ species. Even the briefest exposure to ambient conditions lead to hydroxylation of surface borochloride species. However, the Si 2p signature at 102 eV allowed for a confirmation of the formation of a direct Si-B bond. Density functional theory was utilized to supplement the analysis and identify possible major surface species resulting from these reactions. This work provides a new pathway to obtain a functionalized silicon surface with a direct Si-B bond that can potentially be exploited as a means of selective, ultra-shallow, and supersaturated doping.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Finite Element Analysis and Techno-economic Modeling of Solar Silicon Molten Salt Electrolysis

A new process is presented for low-cost one-step production of pure solid silicon from natural quartzite by molten salt electrolysis. At a process temperature of 1100°C, a techno-economic model including detailed mass and energy balances estimates energy consumption below 15 kWh/kg, with operating cost of $\$1.74$/kg and capital cost around $\$10,500$ per t/a (tonne annually) of production capacity for a 160,000 t/a plant. Use of an inert solid oxide membrane anode results in a pure oxygen by-product and no direct emissions. As a result, finite element analysis estimates the current density distribution and total current to inform the design of slab-shaped solid silicon cathodes.

14 SOLAR ENERGY↗
DOE OSTI2024

Assessment of Readout Techniques for Passive Monitors

This fiscal year (FY) 2023 report on passive temperature sensors covers two main objectives: to demonstrate that the optical dilatometer can successfully process disc shaped silicon carbide (SiC) temperature monitors (TMs), and to demonstrate proof of concept for using the capacitance readout method to read printed melt wires. The SiC objective was successfully met by annealing and analyzing, via optical dilatometry, all eight 3-mm SiC discs provided by the Nuclear Science User Facilities (NSUF) Idaho State University (ISU) Nanostructured Steels for Enhanced Radiation Tolerance (N SERT) experiment, which was irradiated at Idaho National Laboratory (INL)’s Advanced Test Reactor (ATR). Per the ISU N SERT experiment, capsule 1 (KGT 3828 1 and KGT 3828-2) had a design temperature of 300°C +/- 50°C and an exposure of 2 dpa +/- 10%; capsule 2 (KGT 4600 and KGT 4609) had a design temperature of 300°C +/- 50°C and an exposure of 6 dpa +/- 10%; capsule 3 (KGT 4639 C and KGT 4639-D) had a design temperature of 500°C +/- 50°C and an exposure of 6 dpa +/- 10%; and capsule 4 (KGT 3841 3 and KGT 3841 4) had a design temperature of 500°C +/- 50°C and an exposure of 2 dpa +/- 10%. The target exposure rates, in dpa, are the neutron damage for various types of nanostructured steels. All but three SiC TMs (KGT 4600, KGT 4639 D, and KGT 3841 4) revealed averaged peak irradiation temperatures that fell within the design temperature ranges. The three SiC TMs that did not fall within the design temperatures ranges were at least 100°C below that target temperature. Furthermore, SiC TM KGT 3841 C revealed two irradiation regimes: one closer to the 300°C design temperature, and the other closer to the 500°C design temperature. Also, all the SiC TMs’ averaged peak irradiation temperatures came in anywhere between 20°C and 240°C below the irradiation temperatures predicted by the thermal models. This showed the optical dilatometry method to be a reliable and less time intensive process for determining averaged peak irradiation temperatures from passive SiC TMs such as rods and discs. Under the Advanced Sensors and Instrumentation (ASI) program in FY-23, Boise State University (BSU) proposed to demonstrate proof of concept for using a capacitance readout technique applicable to printed melt wires; however, they were stymied by the complexity of the capacitance readout method. In support of the BSU work, INL developed an additively manufactured (AM) ceramic package for encapsulating the new melt wires. Inks were synthesized at BSU that used new protocols rather than following previously established protocols implemented at INL, and testing of various temperatures was conducted at BSU to evaluate the melting behaviors of the printed melt wires. The result was that the capacitance readout technique showed promise but also created more challenges than originally anticipated. For example, the tin ink synthesized at BSU showed unusual melting behaviors that did nothing to enhance the performance of the final printed melt wire prototype in terms of the capacitance readout method. To make the proof of concept work when applied to the printed melt wires, the ASI program would need to invest further resources and time. Consequently, the program is not planning to continue this proof of concept work in FY-24, based on the progress and findings achieved in FY-23.

36 MATERIALS SCIENCE↗