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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Silicon production process evaluations

Chemical engineering analyses involving the preliminary process design of a plant (1,000 metric tons/year capacity) to produce silicon via the technology under consideration were accomplished. Major activities in the chemical engineering analyses included base case conditions, reaction chemistry, process flowsheet, material balance, energy balance, property data, equipment design, major equipment list, production labor and forward for economic analysis. The process design package provided detailed data for raw materials, utilities, major process equipment and production labor requirements necessary for polysilicon production in each process.

Source record↗
NASA NTRS1979

Development of a model and computer code to describe solar grade silicon production processes

Two computer codes were developed for describing flow reactors in which high purity, solar grade silicon is produced via reduction of gaseous silicon halides. The first is the CHEMPART code, an axisymmetric, marching code which treats two phase flows with models describing detailed gas-phase chemical kinetics, particle formation, and particle growth. It can be used to described flow reactors in which reactants, mix, react, and form a particulate phase. Detailed radial gas-phase composition, temperature, velocity, and particle size distribution profiles are computed. Also, deposition of heat, momentum, and mass (either particulate or vapor) on reactor walls is described. The second code is a modified version of the GENMIX boundary layer code which is used to compute rates of heat, momentum, and mass transfer to the reactor walls. This code lacks the detailed chemical kinetics and particle handling features of the CHEMPART code but has the virtue of running much more rapidly than CHEMPART, while treating the phenomena occurring in the boundary layer in more detail.

Gould, R. K.↗
NASA NTRS1979

Development of a Model and Computer Code to Describe Solar Grade Silicon Production Processes

Mathematical models and computer codes based on these models, which allow prediction of the product distribution in chemical reactors for converting gaseous silicon compounds to condensed-phase silicon were developed. The following tasks were accomplished: (1) formulation of a model for silicon vapor separation/collection from the developing turbulent flow stream within reactors of the Westinghouse (2) modification of an available general parabolic code to achieve solutions to the governing partial differential equations (boundary layer type) which describe migration of the vapor to the reactor walls, (3) a parametric study using the boundary layer code to optimize the performance characteristics of the Westinghouse reactor, (4) calculations relating to the collection efficiency of the new AeroChem reactor, and (5) final testing of the modified LAPP code for use as a method of predicting Si(1) droplet sizes in these reactors.

Srivastava, R.↗
NASA NTRS1981

Processing of silicon solar cells by ion implantation and laser annealing

Methods to improve the radiation tolerance of silicon cells for spacecraft use are described. The major emphasis of the program was to reduce the process-induced carbon and oxygen impurities in the junction and base regions of the solar cell, and to measure the effect of reduced impurity levels on the radiation tolerance of cells. Substrates of 0.1, 1.0 and 10.0 ohm-cm float-zone material were used as starting material in the process sequence. High-dose, low-energy ion implantation was used to form the junction in n+p structures. Implant annealing was performed by conventional furnace techniques and by pulsed laser and pulsed electron beam annealing. Cells were tested for radiation tolerance at Spire and NASA-LeRC. After irradiation by 1 MeV electrons to a fluence of 10 to the 16th power per sq cm, the cells tested at Spire showed no significant process induced variations in radiation tolerance. However, for cells tested at Lewis to a fluence of 10 to the 15th power per sq cm, ion-implanted cells annealed in vacuum by pulsed electron beam consistently showed the best radiation tolerance for all cell resistivities.

Minnucci, J. A.↗
NASA NTRS1982

Study of phenomena related to the sintering process of silicon nitride at atmospheric pressure

A procedure was perfected for the production of components used in engineering applications of silicon nitride. Particles of complex geometry that combine remarkable mechanical properties with a high density are obtained. The process developed, in contrast to the "hot pressing" method, does not use external pressures, and in contrast to the reaction bonding method, final densities close to the theoretical value are obtained.

Bertani, A.↗
NASA NTRS1979

Development of a Model and Computer Code to Describe Solar Grade Silicon Production Processes

The program aims at developing mathematical models and computer codes based on these models, which allow prediction of the product distribution in chemical reactors for converting gaseous silicon compounds to condensed-phase silicon. The major interest is in collecting silicon as a liquid on the reactor walls and other collection surfaces. Two reactor systems are of major interest, a SiCl4/Na reactor in which Si(l) is collected on the flow tube reactor walls and a reactor in which Si(l) droplets formed by the SiCl4/Na reaction are collected by a jet impingement method. During this quarter the following tasks were accomplished: (1) particle deposition routines were added to the boundary layer code; and (2) Si droplet sizes in SiCl4/Na reactors at temperatures below the dew point of Si are being calculated.

Srivastava, R.↗
NASA NTRS1977

Silicon web process development

Thirty-five (35) furnace runs were carried out during this quarter, of which 25 produced a total of 120 web crystals. The two main thermal models for the dendritic growth process were completed and are being used to assist the design of the thermal geometry of the web growth apparatus. The first model, a finite element representation of the susceptor and crucible, was refined to give greater precision and resolution in the critical central region of the melt. The second thermal model, which describes the dissipation of the latent heat to generate thickness-velocity data, was completed. Dendritic web samples were fabricated into solar cells using a standard configuration and a standard process for a N(+) -P-P(+) configuration. The detailed engineering design was completed for a new dendritic web growth facility of greater width capability than previous facilities.

Duncan, C. S.↗
NASA NTRS1978

Development of a model and computer code to describe solar grade silicon production processes

Mechanisms for the SiCl4/Na and SiF4/Na reaction systems were examined. Reaction schemes which include 25 elementary reactions were formulated for each system and run to test the sensitivity of the computed concentration and temperature profiles to the values given estimated rate coefficients. It was found that, for SiCl4/Na, the rate of production of free Si is largely mixing-limited for reasonable rate coefficient estimates. For the SiF4/Na system the results indicate that the endothermicities of many of the reactions involved in producing Si from SiF4/Na cause this system to be chemistry-limited rather than mixing-limited.

Gould, R. K.↗
NASA NTRS1980

Effect of impurities and processing on silicon solar cells. Volume 1: Characterization methods for impurities in silicon and impurity effects data base

Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. Discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, conventional solar cell I-V techniques, and descriptions of silicon chemical analysis are presented and discussed. The tabulated data include lists of impurity segregation coefficients, ingot impurity analyses and estimated concentrations, typical deep level impurity spectra, photoconductive and open circuit decay lifetimes for individual metal-doped ingots, and a complete tabulation of the cell I-V characteristics of nearly 200 ingots.

Hopkins, R. H.↗
NASA NTRS1980

Silicon web process development

A barrier crucible design which consistently maintains melt stability over long periods of time was successfully tested and used in long growth runs. The pellet feeder for melt replenishment was operated continuously for growth runs of up to 17 hours. The liquid level sensor comprising a laser/sensor system was operated, performed well, and meets the requirements for maintaining liquid level height during growth and melt replenishment. An automated feedback loop connecting the feed mechanism and the liquid level sensing system was designed and constructed and operated successfully for 3.5 hours demonstrating the feasibility of semi-automated dendritic web growth. The sensitivity of the cost of sheet, to variations in capital equipment cost and recycling dendrites was calculated and it was shown that these factors have relatively little impact on sheet cost. Dendrites from web which had gone all the way through the solar cell fabrication process, when melted and grown into web, produce crystals which show no degradation in cell efficiency. Material quality remains high and cells made from web grown at the start, during, and the end of a run from a replenished melt show comparable efficiencies.

Duncan, C. S.↗
NASA NTRS1981

Laser processing of silicon solar cells

Results of a study to utilize an Nd:glass laser for production line annealing of ion implantation induced damage in solar cells are reported. Czochralski-grown and sawn Si wafers 7.6 cm in diam, 0.35 mm thick, were implanted with phosphorus junctions and boron BSFs. Annealing with electron beam, laser, and firing of an Al paste to form the BSFs in different cells was compared. The laser was employed at 1.06 and 0.53 micron and in combination of both, with a 20-50 nsec pulsewidth, and energy densities of 1.2, 1.5, 1.9, and 2.1 J/sq cm. Best optical coupling was observed with the combined wavelengths and a 20 nsec pulse, using energy densities less than 1.5 J/sq cm. Although the Al sintered cells displayed the best characteristics, laser annealing is concluded to offer electrically active, defect-free, shallow junction Si substrates for high efficiency cells.

Katzeff, J. S.↗
NASA NTRS1985

Current understanding of point defects and diffusion processes in silicon

The effects of oxidation of Si which established that vacancies (V) and Si self interstitials (I) coexist in Si at high temperatures under thermal equilibrium and oxidizing conditions are discussed. Some essential points associated with Au diffusion in Si are then discussed. Analysis of Au diffusion results allowed a determination of the I component and an estimate of the V component of the Si self diffusion coefficient. A discussion of theories on high concentration P diffusion into Si is then presented. Although presently there still is no theory that is completely satisfactory, significant progresses are recently made in treating some essential aspects of this subject.

Tan, T. Y.↗
NASA NTRS1994

Electromagnetically levitated vibration isolation system for the manufacturing process of silicon monocrystals

This paper introduces a study on an Electromagnetically Levitated Vibration Isolation System (ELVIS) for isolation control of large-scale vibration. This system features no mechanical contact between the isolation table and the installation floor, using a total of four electromagnetic actuators which generate magnetic levitation force in the vertical and horizontal directions. The configuration of the magnet for the vertical direction is designed to prevent any generation of restoring vibratory force in the horizontal direction. The isolation system is set so that vibration control effects due to small earthquakes can be regulated to below 5(gal) versus horizontal vibration levels of the installation floor of up t 25(gal), and those in the horizontal relative displacement of up to 30 (mm) between the floor and levitated isolation table. In particular, studies on the relative displacement between the installation floor and the levitated isolation table have been made for vibration control in the horizontal direction. In case of small-scale earthquakes (Taft wave scaled: max. 25 gal), the present system has been confirmed to achieve a vibration isolation to a level below 5 gal. The vibration transmission ratio of below 1/10 has been achieved versus continuous micro-vibration (approx. one gal) in the horizontal direction on the installation floor.

Kanemitsu, Yoichi↗
NASA NTRS1981

A Solution in Search of Problems

Ferrofluids offered vast-problem solving potential. Under license for the NASA technology, Dr. Ronald Moskowitz and Dr. Ronald Rosensweig formed Ferrofluids Corporation. First problem they found a solution for was related to the manufacture of semiconductor "chips" for use in electronic systems. They developed a magnetic seal composed of ferrofluid and a magnetic circuit. Magnetic field confines the ferrofluid in the regions between the stationary elements and the rotary shaft of the seal. Result is a series of liquid barriers that totally bar passage of contaminants. Seal is virtually wear-proof and has a lifetime measured in billions of shaft revolutions. It has reduced maintenance, minimizes "downtime" of production equipment, and reduces the cost of expensive materials that had previously been lost through seal failures. Products based on ferrofluid are exclusion seals for computer disc drives and inertia dampers for stepper motors. Uses are performance-improving, failure-reducing coolants for hi-fi loudspeakers. Other applications include analytical instrumentation, medical equipment, industrial processes, silicon crystal growing furnaces, plasma processes, fusion research, visual displays, and automated machine tools.

Source record↗
NASA NTRS1998

Process for making silicon carbide reinforced silicon carbide composite

A process comprising the steps of: a) providing a fiber preform comprising a non-oxide ceramic fiber with at least one coating, the coating comprising a coating element selected from the group consisting of carbon, nitrogen, aluminum and titanium, and the fiber having a degradation temperature of between 1400.degree. C. and 1450.degree. C., b) impregnating the preform with a slurry comprising silicon carbide particles and between 0.1 wt % and 3 wt % added carbon c) providing a cover mix comprising: i) an alloy comprising a metallic infiltrant and the coating element, and ii) a resin, d) placing the cover mix on at least a portion of the surface of the porous silicon carbide body, e) heating the cover mix to a temperature between 1410.degree. C. and 1450.degree. C. to melt the alloy, and f) infiltrating the fiber preform with the melted alloy for a time period of between 15 minutes and 240 minutes, to produce a ceramic fiber reinforced ceramic composite.

Lau, Sai-Kwing↗
NASA NTRS2015

High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources - a nominal 300-Volt high voltage input bus and a nominal 28-Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power supplies that provide power to the thruster auxiliary supplies, and two parallel 7.5 kilowatt power supplies that are capable of providing up to 15 kilowatts of total power at 300-Volts to 500-Volts to the thruster discharge supply. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall Effect Thruster. The performance of unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate the exceptional performance with full power efficiencies exceeding 97. With a space-qualified silicon carbide or similar high voltage, high efficiency power device, this design could evolve into a flight design for future missions that require high power electric propulsion systems.

Technology↗
NASA NTRS2015

High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

Power↗