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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
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NASA NTRS2014

Characteristics of the Single-Longitudinal-Mode Planar-Waveguide External Cavity Diode Laser at 1064 nm

We describe the characteristics of the planar-waveguide external cavity diode laser (PW-ECL). To the best of our knowledge, it is the first butterfly-packaged 1064 nm semiconductor laser that is stable enough to be locked to an external frequency reference. We evaluated its performance from the viewpoint of precision experiments. Using a hyperfine absorption line of iodine, we suppressed its frequency noise by a factor of up to 104 at 10 mHz. The PWECL's compactness and low cost make it a candidate to replace traditional Nd:YAG nonplanar ring oscillators and fiber lasers in applications that require a single longitudinal mode.

planar-waveguide↗
NASA NTRS1984

Supermode analysis of phase-locked arrays of semiconductor lasers

The optical characteristics of phase-locked semiconductor laser arrays are formulated in terms of the array supermodes, which are the eigenmodes of the composite-array waveguide, by using coupled-mode theory. These supermodes are employed to calculate the near fields, the far fields, and the difference in the longitudinal-mode oscillation wavelengths of the array. It is shown that the broadening in the far-field beam divergence, as well as the broadening of each of the longitudinal modes that were observed in phase-locked arrays, may arise from the excitation of an increasing number of supermodes at increasing pumping levels.

Kapon, E.↗
NASA NTRS1992

Laterally Coupled Distributed-Feedback Lasers

Distributed-feedback semiconductor lasers of proposed design called "laterally coupled" features Bragg gratings located on top surfaces next to sides of ridge waveguides overlying gain regions of laser resonators.

Lang, Robert J.↗
NASA NTRS2010

NASA Tech Briefs, December 2010

Topics include: Coherent Frequency Reference System for the NASA Deep Space Network; Diamond Heat-Spreader for Submillimeter-Wave Frequency Multipliers; 180-GHz I-Q Second Harmonic Resistive Mixer MMIC; Ultra-Low-Noise W-Band MMIC Detector Modules; 338-GHz Semiconductor Amplifier Module; Power Amplifier Module with 734-mW Continuous Wave Output Power; Multiple Differential-Amplifier MMICs Embedded in Waveguides; Rapid Corner Detection Using FPGAs; Special Component Designs for Differential-Amplifier MMICs; Multi-Stage System for Automatic Target Recognition; Single-Receiver GPS Phase Bias Resolution; Ultra-Wideband Angle-of-Arrival Tracking Systems; Update on Waveguide-Embedded Differential MMIC Amplifiers; Automation Framework for Flight Dynamics Products Generation; Product Operations Status Summary Metrics; Mars Terrain Generation; Application-Controlled Parallel Asynchronous Input/Output Utility; Planetary Image Geometry Library; Propulsion Design With Freeform Fabrication (PDFF); Economical Fabrication of Thick-Section Ceramic Matrix Composites; Process for Making a Noble Metal on Tin Oxide Catalyst; Stacked Corrugated Horn Rings; Refinements in an Mg/MgH2/H2O-Based Hydrogen Generator; Continuous/Batch Mg/MgH2/H2O-Based Hydrogen Generator; Strain System for the Motion Base Shuttle Mission Simulator; Ko Displacement Theory for Structural Shape Predictions; Pyrotechnic Actuator for Retracting Tubes Between MSL Subsystems; Surface-Enhanced X-Ray Fluorescence; Infrared Sensor on Unmanned Aircraft Transmits Time-Critical Wildfire Data; and Slopes To Prevent Trapping of Bubbles in Microfluidic Channels.

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NASA NTRS1993

Curved grating fabrication techniques for concentric-circle grating, surface-emitting semiconductor lasers

We describe the fabrication and operational characteristics of a novel, surface-emitting semiconductor laser that makes use of a concentric-circle grating to both define its resonant cavity and to provide surface emission. A properly fabricated circular grating causes the laser to operate in radially inward- and outward-going circular waves in the waveguide, thus, introducing the circular symmetry needed for the laser to emit a beam with a circular cross-section. The basic circular-grating-resonator concept can be implemented in any materials system; an AlGaAs/GaAs graded-index, separate confinement heterostructure (GRINSCH), single-quantum-well (SQW) semiconductor laser, grown by molecular beam epitaxy (MBE), was used for the experiments discussed here. Each concentric-circle grating was fabricated on the surface of the AlGaAs/GaAs semiconductor laser. The circular pattern was first defined by electron-beam (e-beam) lithography in a layer of polymethylmethacrylate (PMMA) and subsequently etched into the semiconductor surface using chemically-assisted (chlorine) ion-beam etching (CAIBE). We consider issues that affect the fabrication and quality of the gratings. These issues include grating design requirements, data representation of the grating pattern, and e-beam scan method. We provide examples of how these techniques can be implemented and their impact on the resulting laser performance. A comparison is made of the results obtained using two fundamentally different electron-beam writing systems. Circular gratings with period lambda = 0.25 microns and overall diameters ranging from 80 microns to 500 microns were fabricated. We also report our successful demonstration of an optically pumped, concentric-circle grating, semiconductor laser that emits a beam with a far-field divergence angle that is less than one degree. The emission spectrum is quite narrow (less than 0.1 nm) and is centered at wavelength lambda = 0.8175 microns.

Jordan, Rebecca H.↗
NASA NTRS1985

Gain saturation effects in supermodes of phase-locked semiconductor laser arrays

A basic modal analysis that includes gain saturation effects in phase-locked semiconductor laser arrays is presented. For a particular supermode operation, different lasers in the array emit different amounts of light, and hence their (waveguide) propagation constants are modified differently. Solving the lasers' rate equations self-consistently with the coupled-mode wave equations seems to provide an answer that is in much better agreement with experimental results than the result using only the coupled-mode analysis.

Katz, J.↗
NASA NTRS2002

Novel On-wafer Radiation Pattern Measurement Technique for MEMS Actuator Based Reconfigurable Patch Antennas

The paper presents a novel on-wafer, antenna far field pattern measurement technique for microelectromechanical systems (MEMS) based reconfigurable patch antennas. The measurement technique significantly reduces the time and the cost associated with the characterization of printed antennas, fabricated on a semiconductor wafer or dielectric substrate. To measure the radiation patterns, the RF probe station is modified to accommodate an open-ended rectangular waveguide as the rotating linearly polarized sampling antenna. The open-ended waveguide is attached through a coaxial rotary joint to a Plexiglas(Trademark) arm and is driven along an arc by a stepper motor. Thus, the spinning open-ended waveguide can sample the relative field intensity of the patch as a function of the angle from bore sight. The experimental results include the measured linearly polarized and circularly polarized radiation patterns for MEMS-based frequency reconfigurable rectangular and polarization reconfigurable nearly square patch antennas, respectively.

Simons, Rainee N.↗
NASA NTRS2010

Quad-Chip Double-Balanced Frequency Tripler

Solid-state frequency multipliers are used to produce tunable broadband sources at millimeter and submillimeter wavelengths. The maximum power produced by a single chip is limited by the electrical breakdown of the semiconductor and by the thermal management properties of the chip. The solution is to split the drive power to a frequency tripler using waveguides to divide the power among four chips, then recombine the output power from the four chips back into a single waveguide. To achieve this, a waveguide branchline quadrature hybrid coupler splits a 100-GHz input signal into two paths with a 90 relative phase shift. These two paths are split again by a pair of waveguide Y-junctions. The signals from the four outputs of the Y-junctions are tripled in frequency using balanced Schottky diode frequency triplers before being recombined with another pair of Y-junctions. A final waveguide branchline quadrature hybrid coupler completes the combination. Using four chips instead of one enables using four-times higher power input, and produces a nearly four-fold power output as compared to using a single chip. The phase shifts introduced by the quadrature hybrid couplers provide isolation for the input and output waveguides, effectively eliminating standing waves between it and surrounding components. This is accomplished without introducing the high losses and expense of ferrite isolators. A practical use of this technology is to drive local oscillators as was demonstrated around 300 GHz for a heterodyne spectrometer operating in the 2-3-THz band. Heterodyne spectroscopy in this frequency band is especially valuable for astrophysics due to the presence of a very large number of molecular spectral lines. Besides high-resolution radar and spectrographic screening applications, this technology could also be useful for laboratory spectroscopy.

Lin, Robert H.↗
NASA NTRS2014

Characteristics of the Single-Longitudinal-Mode Planar-Waveguide External Cavity Diode Laser at 1064 nm

We describe the characteristics of the planar-waveguide external cavity diode laser (PW-ECL). To the best of our knowledge, it is the first butterfly-packaged 1064-nm semiconductor laser that is stable enough to be locked to an external frequency reference. We evaluated its performance from the viewpoint of precision experiments. Especially, using a hyperfine absorption line of iodine, we suppressed its frequency noise by a factor of up to104 at 10 mHz. The PW-ECLs compactness and low cost make it a candidate to replace traditional Nd:YAGnon-planar ring oscillators and fiber lasers in applications which require a single longitudinal-mode.

diode↗
NASA NTRS1999

Photonic Switching Devices Using Light Bullets

A unique ultra-fast, all-optical switching device or switch is made with readily available, relatively inexpensive, highly nonlinear optical materials. which includes highly nonlinear optical glasses, semiconductor crystals and/or multiple quantum well semiconductor materials. At the specified wavelengths. these optical materials have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counter-propagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide. and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. An advantage of the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another advantage of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in nonlinear optical materials. including highly nonlinear optical glasses and semiconductor materials such as semiconductor crystals and/or multiple quantum well semiconductor materials.

Goorjian, Peter M.↗
NASA NTRS1992

Monolithic semiconductor light emitter and amplifier

A semiconductor light emitter comprising a substrate of a semiconductor material having a pair of opposed surfaces and a body of semiconductor material on one of the surfaces. The body includes a pair of clad layers of opposite conductivity types having an intermediate quantum well region therebetween. The clad layers are of a semiconductor material which forms a heterojunction with the material of the quantum well region. The clad layers and the quantum well region form a waveguide which extends along the body. A plurality of gain sections are formed in the body spaced along and optically coupled by the waveguide. Each of the gain sections is adapted to generate light therein when a voltage is placed thereacross. One of the gain section has gratings at each end thereof which are adapted to reflect light back into the one gain section and thereby create a beam of light. The grating between the one gain section and an adjacent gain section is adapted to allow some of the light generated in the one gain section to pass therethrough along the waveguide to the next gain section. Each of the other gain sections have gratings adjacent an end opposite the first gain sections. The periods of the grating are such that no self-oscillation of the light in the waveguide occurs so that each of the other gain sections serve as single pass amplifiers. The gratings also direct the amplified light from the other gain sections out of the body.

Carlson, Nils W.↗
NASA NTRS2013

High-Power Single-Mode 2.65-micron InGaAsSb/AlInGaAsSb Diode Lasers

Central to the advancement of both satellite and in-situ science are improvements in continuous-wave and pulsed infrared laser systems coupled with integrated miniaturized optics and electronics, allowing for the use of powerful, single-mode light sources aboard both satellite and unmanned aerial vehicle platforms. There is a technological gap in supplying adequate laser sources to address the mid-infrared spectral window for spectroscopic characterization of important atmospheric gases. For high-power applications between 2 to 3 micron, commercial laser technologies are unsuitable because of limitations in output power. For instance, existing InP-based laser systems developed for fiber-based telecommunications cannot be extended to wavelengths longer than 2 micron. For emission wavelengths shorter than 3 micron, intersubband devices, such as infrared quantum cascade lasers, become inefficient due to band-offset limitations. To date, successfully demonstrated singlemode GaSb-based laser diodes emitting between 2 and 3 micron have employed lossy metal Bragg gratings for distributed- feedback coupling, which limits output power due to optical absorption. By optimizing both the quantum well design and the grating fabrication process, index-coupled distributed-feedback 2.65-micron lasers capable of emitting in excess of 25 mW at room temperature have been demonstrated. Specifically, lasers at 3,777/cm (2.65 micron) have been realized to interact with strong absorption lines of HDO and other isotopologues of H2O. With minor modifications of the optical cavity and quantum well designs, lasers can be fabricated at any wavelength within the 2-to-3-micron spectral window with similar performance. At the time of this reporting, lasers with this output power and wavelength accuracy are not commercially available. Monolithic ridge-waveguide GaSb lasers were fabricated that utilize secondorder lateral Bragg gratings to generate single-mode emission from InGaAsSb/ AlInGaAsSb multi-quantum well structures. The device fabrication utilizes etched index-coupled gratings in the top AlGaAsSb cladding of the laser chip along the ridge waveguide, whereas commercial lasers that emit close to this wavelength include loss-coupled metal gratings that limit the output power of the laser. Semiconductor-laser-based spectrometers can be used to replace gas sensors currently used in industry and government. With the availability of high-power laser sources at mid-infrared wavelengths, sensors can target strong fundamental gas absorption lines to maximize instrument sensitivity.

Frez, Clifford F.↗
NASA NTRS1992

Pseudomorphic Single-Quantum-Well Lasers Emit At 980 Nm

Narrow-stripe semiconductor lasers emitting at 980 nm include pseudomorphic In0.2Ga0.8As/GaAs/AlxGa1-xAs graded-index-of-refraction, separate-confinement-heterostructure single quantum well(GRINSCH SQW) with overlaid ridge waveguide. 980 nm chosen as one that yields most efficient pumping because there is no absorption in excited states at this wavelength. Suitable for pumping Er(Sup3+)-doped optical-fiber amplifiers in optical-fiber communication systems and optical phased-array ranging systems.

Larsson, Anders↗
NASA NTRS1990

Diode laser array

A diode laser array comprises a substrate of a semiconductor material having first and second opposed surfaces. On the first surface is a plurality of spaced gain sections and a separate distributed Bragg reflector passive waveguide at each end of each gain section and optically connecting the gain sections. Each gain section includes a cavity therein wherein charge carriers are generated and recombine to generate light which is confined in the cavity. Also, the cavity, which is preferably a quantum well cavity, provides both a high differential gain and potentially large depth of loss modulation. Each waveguide has a wavelength which is preferably formed by an extension of the cavity of the gain sections and a grating. The grating has a period which provides a selective feedback of light into the gain sections to supporting lasing, which allows some of the light to be emitted from the waveguide normal to the surface of the substrate and which allows optical coupling of the gain sections. Also, the grating period provides an operating wavelength which is on the short wavelength side of the gain period of the gain sections required for laser oscillation. An RF pulse is applied so as to maximize the magnitude of the loss modulation and the differential gain in the gain sections. The array is operated by applying a DC bias to all the gain sections at a level just below the threshold of the gain sections to only one of the gain sections which raises the bias in all of the gain sections to a level that causes all of the gain sections to oscillate. Thus, a small bias can turn the array on and off.

Carlson, Nils W.↗
NASA NTRS1995

Millimeter And Submillimeter-Wave Integrated Circuits On Quartz

Proposed Quartz substrate Upside-down Integrated Device (QUID) relies on UV-curable adhesive to bond semiconductor with quartz. Integrated circuits including planar GaAs Schottky diodes and passive circuit elements (such as bandpass filters) fabricated on quartz substrates. Circuits designed to operate as mixers in waveguide circuit at millimeter and submillimeter wavelengths. Integrated circuits mechanically more robust, larger, and easier to handle than planar Schottky diode chips. Quartz substrate more suitable for waveguide circuits than GaAs substrate.

Mehdi, Imran↗
NASA NTRS2004

Measured Attenuation of Coplanar Waveguide on 6H, p-type SiC and High Purity Semi-Insulating 4H SiC through 800 K

Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and jet engine performance monitoring require circuits built on wide bandgap semiconductors. In this paper, the characteristics of microwave transmission lines on 4H-High Purity Semi-Insulating SiC and 6H, p-type SiC is presented as a function of temperature and frequency. It is shown that the attenuation of 6H, p-type substrates is too high for microwave circuits, large leakage current will flow through the substrate, and that unusual attenuation characteristics are due to trapping in the SiC. The 4H-HPSI SiC is shown to have low attenuation and leakage currents over the entire temperature range.

Ponchak, George E.↗
NASA NTRS2011

NASA Tech Briefs, July 2011

Topics covered include: 1) Collaborative Clustering for Sensor Networks; 2) Teleoperated Marsupial Mobile Sensor Platform Pair for Telepresence Insertion Into Challenging Structures; 3) Automated Verification of Spatial Resolution in Remotely Sensed Imagery; 4) Electrical Connector Mechanical Seating Sensor; 5) In Situ Aerosol Detector; 6) Multi-Parameter Aerosol Scattering Sensor; 7) MOSFET Switching Circuit Protects Shape Memory Alloy Actuators; 8) Optimized FPGA Implementation of Multi-Rate FIR Filters Through Thread Decomposition; 9) Circuit for Communication Over Power Lines; 10) High-Efficiency Ka-Band Waveguide Two-Way Asymmetric Power Combiner; 11) 10-100 Gbps Offload NIC for WAN, NLR, and Grid Computing; 12) Pulsed Laser System to Simulate Effects of Cosmic Rays in Semiconductor Devices; 13) Flight Planning in the Cloud; 14) MPS Editor; 15) Object-Oriented Multi Disciplinary Design, Analysis, and Optimization Tool; 16) Cryogenic-Compatible Winchester Connector Mount and Retaining System for Composite Tubes; 17) Development of Position-Sensitive Magnetic Calorimeters for X-Ray Astronomy; 18) Planar Rotary Piezoelectric Motor Using Ultrasonic Horns; 19) Self-Rupturing Hermetic Valve; 20) Explosive Bolt Dual-Initiated from One Side; 21) Dampers for Stationary Labyrinth Seals; 22) Two-Arm Flexible Thermal Strap; 23) Carbon Dioxide Removal via Passive Thermal Approaches; 24) Polymer Electrolyte-Based Ambient Temperature Oxygen Microsensors for Environmental Monitoring; 25) Pressure Shell Approach to Integrated Environmental Protection; 26) Image Quality Indicator for Infrared Inspections; 27) Micro-Slit Collimators for X-Ray/Gamma-Ray Imaging; 28) Scatterometer-Calibrated Stability Verification Method; 29) Test Port for Fiber-Optic-Coupled Laser Altimeter; 30) Phase Retrieval System for Assessing Diamond Turning and Optical Surface Defects; 31) Laser Oscillator Incorporating a Wedged Polarization Rotator and a Porro Prism as Cavity Mirror; 32) Generic, Extensible, Configurable Push-Pull Framework for Large-Scale Science Missions; 33) Dynamic Loads Generation for Multi-Point Vibration Excitation Problems; 34) Optimal Control via Self-Generated Stochasticity; 35) Space-Time Localization of Plasma Turbulence Using Multiple Spacecraft Radio Links; 36) Surface Contact Model for Comets and Asteroids; 37) Dust Mitigation Vehicle; 38) Optical Coating Performance for Heat Reflectors of the JWST-ISIM Electronic Component; 39) SpaceCube Demonstration Platform; 40) Aperture Mask for Unambiguous Parity Determination in Long Wavelength Imagers; 41) Spaceflight Ka-Band High-Rate Radiation-Hard Modulator; 42) Enabling Disabled Persons to Gain Access to Digital Media; 43) Cytometer on a Chip; 44) Principles, Techniques, and Applications of Tissue Microfluidics; and 45) Two-Stage Winch for Kites and Tethered Balloons or Blimps.

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