SEARCH · Engineering Papers
Results for “semiconductor lasers”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Photoluminescence and Raman spectroscopy of wide bandgap semiconductors damaged by deep-UV laser irradiation
The effects of a pulsed, focused, deep-UV (4.66 eV) laser on wide and ultra-wide bandgap semiconductors were investigated with photoluminescence (PL) and Raman spectroscopy. Three semiconductor single crystals were studied: silicon carbide (6H-SiC), gallium nitride (GaN), and gallium oxide (β-Ga 2 O 3 ). Atomic emission lines from neutral Ga or Si were observed during the laser-damage process. For all three semiconductors, PL mapping (3.49 eV laser excitation) of the damaged material revealed visible emission bands in the 2.6–2.8 eV range, attributed to point defects. Raman spectra (2.33 eV excitation) showed a reduction in the Raman peak intensities in the damaged region, along with weak PL bands around 1.9–2.1 eV.
Solid-state laser refrigeration of a composite semiconductor Yb:YLiF 4 optomechanical resonator
Photothermal heating represents a major constraint that limits the performance of many nanoscale optoelectronic and optomechanical devices including nanolasers, quantum optomechanical resonators, and integrated photonic circuits. Here, we demonstrate the direct laser refrigeration of a semiconductor optomechanical resonator >20 K below room temperature based on the emission of upconverted, anti-Stokes photoluminescence of trivalent ytterbium ions doped within a yttrium-lithium-fluoride (YLF) host crystal. Optically-refrigerating the lattice of a dielectric resonator has the potential to impact several fields including scanning probe microscopy, the sensing of weak forces, the measurement of atomic masses, and the development of radiation-balanced solid-state lasers. In addition, optically refrigerated resonators may be used in the future as a promising starting point to perform motional cooling for exploration of quantum effects at mesoscopic length scales, temperature control within integrated photonic devices, and solid-state laser refrigeration of quantum materials.
Demonstration of yellow (568 nm) stimulated emission from optically pumped InGaN/GaN multi-quantum wells
We demonstrate room-temperature stimulated emission at 568 nm from low dislocation density InGaN/GaN multi-quantum wells. For a 1.4 mm long and a 50 $μ$4m wide ridge bar optically pumped by a high-power pulsed laser, we observed an emission peak at 568 nm with a narrow spectral width of less than 2 nm at room temperature. The measured pumping threshold is less than 1.5 MW/cm 2 , and the polarization ratio of the emission is over 90%. In conclusion, this demonstration paves the way for the future development of electrically injected InGaN semiconductor yellow laser diodes.
Long wavelength interband cascade lasers
InAs-based interband cascade lasers (ICLs) can be more easily adapted toward long wavelength operation than their GaSb counterparts. Devices made from two recent ICL wafers with an advanced waveguide structure are reported, which demonstrate improved device performance in terms of reduced threshold current densities for ICLs near 11 μm or extended operating wavelength beyond 13 μm. Here, the ICLs near 11 μm yielded a significantly reduced continuous wave (cw) lasing threshold of 23 A/cm 2 at 80 K with substantially increased cw output power, compared with previously reported ICLs at similar wavelengths. ICLs made from the second wafer incorporated an innovative quantum well active region, comprised of InAsP layers, and lased in the pulsed-mode up to 120 K at 13.2 μm, which is the longest wavelength achieved for III–V interband lasers.
Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting from Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation
Heavy ion, focused x-ray, and pulsed laser single event transient experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between the different sources. It is observed that these transient shape characteristics depend on the source (ion, x-ray, or laser), even when similar amounts of charge are generated. Finally, the observed differences are examined and explained in terms of basic charge collection mechanisms.
Colloidal semiconductor quantum shells for solution-processed laser applications
Laser diodes based on solution-processed semiconductor quantum dots (QDs) present an economical and color-tunable alternative to traditional epitaxial lasers.
Dual-Wavelength Y-Branch DBR Lasers With 100 mW of CW Power Near 2 μm
In this study, the interband GaSb-based diode lasers emitting simultaneously in two narrow bands separated by either ~1.6 or ~3.3 THz were designed, fabricated and characterized. The device active region contained one asymmetric tunnel-coupled double quantum well with separation between two lowest electron subbands controlled by thickness of the tunnel barrier. The Y-branch 6th order distributed Bragg reflector devices have been fabricated with either deep or shallow etched ridge waveguides. The increase of the deeply etched ridge waveguide width from 10 to 20 μm improved laser threshold and efficiency thanks to reduction of the relative role of the sidewall defect recombination. Further improvement of the device performance parameter was achieved by shallow etching. The shallow etched lasers with stable dual-wavelength emission spectrum generated 100 mW of continuous wave output power at 20 °C
Demonstration of a 20‐W membrane‐external‐cavity surface‐emitting laser for sodium guide star applications
Abstract We present a record 20‐W continuous‐wave output power membrane‐external‐cavity surface‐emitting laser (MECSEL) double‐bonded to silicon carbide (SiC) heat spreaders emitting around 1178 nm. We achieved a maximum slope efficiency of 27.7% and an optical‐to‐optical efficiency of 26.7%. By utilising an intracavity birefringent filtre, the wavelength was tuned over 75 nm and maximum output power of 12.7 W was recorded at 1178 nm. This study shows the potential of MECSELs to achieve high‐performance and cost‐effective optically pumped semiconductor disk lasers targeting applications in sodium guide stars.
Thin film lithium niobate electric field sensors
We present our results for using thin film lithium niobate devices for electric field sensing applications. Micro-ring modulator and Mach–Zehnder modulator-based electric field sensors are demonstrated. Micro-ring resonator sensors can be used for low frequency (up to several GHz) electric field sensing applications and achieve a high sensitivity of 80 mV/(m Hz 1/2 ) with a very compact size of 300 μm, as limited by the intensity and phase noise of the used distributed feedback laser. A measurement bandwidth of 2.5 GHz is measured for these sensors and is limited by the detector bandwidth. Alternatively, Mach–Zehnder modulators allow for perfect phase matching between the radio frequency signals and optical signals, and they can be used for electric field sensing up to several THz. A sensitivity of 2.2 V/(m Hz 1/2 ) was obtained using our Mach–Zehnder electric field sensor with an interaction length of 600 μm. The Mach–Zehnder sensor can sense electric fields with frequencies reaching 0.6 THz based on the calculated results.
Nanostructured $\mathrm{GaAs/(Al,Ga)As}$ Waveguide for Low-Density Polariton Condensation from a Bound State in the Continuum
Exciton-polaritons are hybrid light-matter states that arise from strong coupling between an exciton resonance and a photonic cavity mode. As bosonic excitations, they can undergo a phase transition to a condensed state that can emit coherent light without a population inversion. This aspect makes them good candidates for thresholdless lasers, yet short exciton-polariton lifetime has made it difficult to achieve condensation at very low power densities. In this sense, long-lived symmetry-protected states are excellent candidates to overcome the limitations that arise from the finite mirror reflectivity of monolithic microcavities. In this work we use a photonic symmetry-protected bound state in the continuum coupled to an excitonic resonance to achieve state-of-the-art polariton condensation threshold in a GaAs/(Al,Ga)As waveguide. Most important, we show the influence of fabrication control and how surface passivation via atomic layer deposition provides a way to reduce exciton quenching at the grating sidewalls.
Conformal Coating of Freestanding Particles by Vapor‐Phase Infiltration
Not Available
Strong ultrafast nonlinear optical response from megaelectronvolt electrons in semiconductors
Understanding radiation–matter interactions on ultrafast timescales is essential for radiation detection technologies, particularly those requiring precise timing, such as plasma monitoring, synchrotron diagnostics and medical imaging. However, the detection of highly ionizing radiation is challenging due to the stochastic nature of the interactions, resulting in dispersed energy deposition. Here we show a nonlinear optical response in semiconductors induced by 150-fs, 4.2-MeV electrons that generate highly localized charge carriers. The induced sub-10-ps optical modulation reached up to 24.5%, accompanied by a blueshift in the absorption edge consistent with band filling and carrier densities of 10 18 cm −3 . These carrier densities are 100-fold higher than expected from the deposited energy, indicating the extreme spatial localization of carriers at inelastic collisions along the ionization trajectories, thereby leading to the observed modulation. The strong nonlinearity of the MeV-electron-induced optical response enables the precise spatiotemporal detection of ionizing radiation at room temperature using common semiconductors and laser systems.
Cryogenically enhanced quasi-optical resonator for megawatt pulsed millimeter-wave sources
We report the design, cryogenic optimization, and performance modeling of a compact quasi-optical ring resonator intended to compress microwaves pulses at 170 and 250 GHz to the megawatt level. By combining ultra-low-loss CVD diamond and gold-doped silicon wafers with high-RRR copper mirrors, the calculated unloaded quality factor exceeds 4.3 × 10 5 at 20 K and yields simulated gains up to $\mathscr{G}$ = 4.1 × 10 3 . Coupling the resonator with a laser-driven semiconductor switch described by an extended Vogel model shows that 1 MW, nanosecond pulses can be generated from only 445 W of microwave drive power while dissipating 272 W into the cryostat. A practical cooling architecture using two Gifford–McMahon stages (20 and 80 K) is proposed, demonstrating that high-repetition-rate (10–20 kHz) operation is feasible with commercially available cryocoolers. The results outline a clear path toward cost-effective, table-top sources for extreme-ultraviolet lithography, dynamic nuclear polarization, and fusion systems.
Chip-scale frequency combs for data communications in computing systems
Recent developments in chip-based frequency-comb technology demonstrate that comb devices can be implemented in applications where photonic integration and power efficiency are required. The large number of equally spaced comb lines that are generated make combs ideal for use in communication systems, where each line can serve as an optical carrier to allow for massively parallel wavelength-division multiplexing (WDM) transmission. In this review, we summarize the developments in integrated frequency-comb technology for use as a WDM source for communication systems in data centers and high-performance computing systems. We highlight the following three approaches for chip-scale comb generation: semiconductor modelocked lasers, electro-optic combs, and Kerr frequency combs.
Direct Laser Writing Crystal Polymorphs of Organic Semiconductors for Phase Change Electronics
The many diverse polymorphic behaviors observed in organic electronic materials offer opportunities to modulate electronic properties through reversibly switching crystal structures. Here, we access the prolific polymorphism observed in two-dimensional quinoidal terthiophene via laser writing to locally heat and direct the phase transitions. We access a metastable polymorph IV through rapid cooling and observe distinct symmetry as well as packing through grazing incidence X-ray diffraction (GIXD). Using our open-source PolyChemPrint patterning platform, we direct laser heating to initiate the IV-I transition, switching the conductance by >2 orders of magnitude. Here, this is confirmed via a combination of GIXD and Raman spectroscopy. Finally, we demonstrate switching of transistor devices as well as discrete tuning of conductance via laser writing.
Overcoming the doping limit in GaAs by ion implantation and pulsed laser melting
Most semiconductors exhibit a saturation of free carriers when heavily doped with extrinsic dopants. This carrier saturation or “doping limit” is known to be related to the formation of native compensating defects, which, in turn, depends on the energy positions of their conduction band minimum and valence band maximum. Here, we carried out a systematic study on the n-type doping limit of GaAs via ion implantation and showed that this doping limitation can be alleviated by the transient process of pulsed laser melting (PLM). For n-type doping, both group VI (S) and amphoteric group IV (Si and Ge) dopants were implanted in GaAs. For comparison, p-type doping was also studied using Zn as the acceptor. Implanted dopants were activated by the PLM method, and the results are compared to rapid thermal annealing (RTA). Our results reveal that for all n-type dopants, while implantation followed by the RTA results in a similar saturation electron concentration of 2–3 × 10 18 cm –3 , the transient PLM process is capable of trapping high concentration of dopants in the substitutional site, giving rise to a carrier concentration of >10 19 cm –3 , exceeding the doping limit of GaAs. However, due to scatterings from point defects generated during PLM, the mobility of n-type GaAs after PLM is low (~80–260 cm 2 /V s). Subsequent RTA after PLM (PLM + RTA) is able to remove these point defects and recover the mobility to ~1000–2000 cm2/V s. The carrier concentrations of these PLM + RTA samples are reduced but are still a factor of 3 higher than RTA only GaAs. This can be understood as the dopants are already incorporated in the substitutional site after PLM; they are less likely to be “deactivated” by subsequent RTA. This work is significant to the understanding of doping mechanisms in semiconductors and provides a means for device applications, which require materials with ultra-high doping.