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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

On “incorrectnes” of the rate equation for photon density of semiconductor lasers

The authors of works [1, 2] published in Quantum Electronics assert that the rate equation for photon density with a term taking into account the contribution of spontaneous emission to the laser mode is erroneous (i.e., the spontaneous term should be excluded from consideration) and criticise works [3, 4]. In the present work, we analyse previously published papers and show that the necessity of taking into account the contribution of spontaneous emission to the laser mode follows from the quantum-mechanical rate equation for semiconductor lasers. The results obtained in [1, 2] are analysed. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1984

Rate equations analysis of phase-locked semiconductor laser arrays under steady state conditions

Rate equations analysis of phase-locked semiconductor laser arrays has been carried out. It was found that for given (laser) current densities, the photon density distribution in the array elements is that particular one which maximizes the total photon density. The results of this analysis were then combined with the waveguide properties of the laser array waveguide, yielding a basic model of phase-locked diode laser arrays. This model explains the effects of the variation of the current combination through the array elements on its mode structure that were observed recently.

Katz, J.↗
NASA NTRS2005

Ring resonator based narrow-linewidth semiconductor lasers

The present invention is a method and apparatus for using ring resonators to produce narrow linewidth hybrid semiconductor lasers. According to one embodiment of the present invention, the narrow linewidths are produced by combining the semiconductor gain chip with a narrow pass band external feedback element. The semi conductor laser is produced using a ring resonator which, combined with a Bragg grating, acts as the external feedback element. According to another embodiment of the present invention, the proposed integrated optics ring resonator is based on plasma enhanced chemical vapor deposition (PECVD) SiO.sub.2 /SiON/SiO.sub.2 waveguide technology.

Ksendzov, Alexander↗
NASA NTRS2000

Plasma Heating and Ultrafast Semiconductor Laser Modulation Through a Terahertz Heating Field

Electron-hole plasma heating and ultrafast modulation in a semiconductor laser under a terahertz electrical field are investigated using a set of hydrodynamic equations derived from the semiconductor Bloch equations. The self-consistent treatment of lasing and heating processes leads to the prediction of a strong saturation and degradation of modulation depth even at moderate terahertz field intensity. This saturation places a severe limit to bandwidth achievable with such scheme in ultrafast modulation. Strategies for increasing modulation depth are discussed.

Li, Jian-Zhong↗
NASA NTRS1982

Phase control and beam steering of semiconductor laser arrays

The operational principles and a possible device configuration of one dimensional monolithically integrated semiconductor laser arrays are described. The output beam of the array can be electronically steered. Devices of the type can find applications in optical communication systems where the power levels needed are above the capability of a single laser device.

Katz, J.↗
NASA NTRS1985

Gain saturation effects in supermodes of phase-locked semiconductor laser arrays

A basic modal analysis that includes gain saturation effects in phase-locked semiconductor laser arrays is presented. For a particular supermode operation, different lasers in the array emit different amounts of light, and hence their (waveguide) propagation constants are modified differently. Solving the lasers' rate equations self-consistently with the coupled-mode wave equations seems to provide an answer that is in much better agreement with experimental results than the result using only the coupled-mode analysis.

Katz, J.↗
NASA NTRS1979

Optical feedback effects on the performance of Pb/1-x/Sn/x/Se semiconductor lasers

The effects of optical feedback on the performance of Pb(1-x)Sn(x)Se semiconductor lasers are reported. Experimental results are presented to demonstrate that uncontrolled optical feedback can occur from optics external to the laser cavity and that these external optical elements can result in the formation of a composite cavity. This composite cavity can sustain a number of narrow closely spaced emission modes with the spectral characteristics of these modes dependent upon the parameters of the cavity. With weak feedback, the spectral width of the amplitude envelope of the new lasing modes resembles that of the original laser mode with no optical feedback. With strongly coupled feedback the envelope of the external cavity modes substantially broadens the apparent linewidth of the laser. It is shown that these effects can be eliminated, and, moreover, they offer the potential for obtaining spectrally narrow single-mode emission from Pb-salt lasers through the use of carefully designed external cavities.

Harward, C. N.↗
NASA NTRS1981

Theory of active mode locking of a semiconductor laser in an external cavity

An analytical treatment is given for the active mode locking of a semiconductor laser in an external resonator. The width of the mode-locked pulses is obtained as a function of the laser and cavity parameters and the amount of frequency detuning. The effects of self-modulation and saturation are included in the treatment. The pulse output is compared with that obtained by a strong modulation of the laser diode with no external cavity.

Yeung, J. A.↗
NASA NTRS1992

Phase stability of injection-locked beam of semiconductor lasers

An experiment on the phase stability of an injection locked beam was done by using AlGaAs semiconductor lasers. The coherence of two beams from master and slave lasers was measured by interference between the beams in the Twymann-Green interferometer. The phase change of the output beam of the slave laser as a function of the driving current was measured in a Mach-Zehnder interferometer consisting of the master and slave lasers, and a value of 2.5 radians/mA was obtained.

Kwon, Jin Hyuk↗
NASA NTRS2004

Semiconductor Lasers Containing Quantum Wells in Junctions

In a recent improvement upon In(x)Ga(1-x)As/InP semiconductor lasers of the bipolar cascade type, quantum wells are added to Esaki tunnel junctions, which are standard parts of such lasers. The energy depths and the geometric locations and thicknesses of the wells are tailored to exploit quantum tunneling such that, as described below, electrical resistances of junctions and concentrations of dopants can be reduced while laser performances can be improved. In(x)Ga(1-x)As/InP bipolar cascade lasers have been investigated as sources of near-infrared radiation (specifically, at wavelengths of about 980 and 1,550 nm) for photonic communication systems. The Esaki tunnel junctions in these lasers have been used to connect adjacent cascade stages and to enable transport of charge carriers between them. Typically, large concentrations of both n (electron-donor) and p (electron-acceptor) dopants have been necessary to impart low electrical resistances to Esaki tunnel junctions. Unfortunately, high doping contributes free-carrier absorption, thereby contributing to optical loss and thereby, further, degrading laser performance. In accordance with the present innovation, quantum wells are incorporated into the Esaki tunnel junctions so that the effective heights of barriers to quantum tunneling are reduced (see figure).

Yang, Rui Q.↗
NASA NTRS1986

Semiconductor laser having a non-absorbing passive region with beam guiding

A laser comprises a semiconductor body having a pair of end faces and including an active region comprising adjacent active and guide layers which is spaced a distance from the end face and a passive region comprising adjacent non-absorbing guide and mode control layers which extends between the active region and the end face. The combination of the guide and mode control layers provides a weak positive index waveguide in the lateral direction thereby providing lateral mode control in the passive region between the active region and the end face.

Botez, Dan↗
NASA NTRS1991

Semiconductor Laser With Multilayer Dielectric Reflector

Multilayer dielectric reflector included in proposed surface-emitting, distributed-feedback, grating semiconductor laser (e.g., a GaAlAs device). Contributes to efficiency and output power of laser by reducing amount of light entering substrate, where wasted by absorption. Index of refraction in reflector sublayers alternates between higher and lower value. Higher value less than effective index of refraction of waveguide layer.

Lang, Robert J.↗
NASA NTRS2008

Reliability of Semiconductor Laser Packaging in Space Applications

A typical set up used to perform lifetime tests of packaged, fiber pigtailed semiconductor lasers is described, as well as tests performed on a set of four pump lasers. It was found that two lasers failed after 3200, and 6100 hours under device specified bias conditions at elevated temperatures. Failure analysis of the lasers indicates imperfections and carbon contamination of the laser metallization, possibly from improperly cleaned photo resist. SEM imaging of the front facet of one of the lasers, although of poor quality due to the optical fiber charging effects, shows evidence of catastrophic damage at the facet. More stringent manufacturing controls with 100% visual inspection of laser chips are needed to prevent imperfect lasers from proceeding to packaging and ending up in space applications, where failure can result in the loss of a space flight mission.

Gontijo, Ivair↗
DOE OSTI2022

Facet effects on generation-recombination currents in semiconductor laser diodes

The contribution of facet defect currents to the overall generation-recombination current of laser diodes operating near 800 nm is quantified experimentally, using the dependence of current on cavity length to isolate facet effects. Here the results show that facet currents exhibit an ideality factor much greater than 2, while currents associated with the interior of the laser diode stripes exhibit an ideality factor of 2. These differences in behavior provide an approach to infer additional details of defect evolution in aging studies of semiconductor laser diodes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1979

Minimizing pattern effects in semiconductor lasers at high rate pulse modulation

This paper deals with analytical and experimental work related to modulation of a semiconductor laser used in high bit rate communication. The approach is based upon minimizing the charge storage effect by a proper choice of the area of the modulating pulses and the bias current. The concept of using additional current pulses to probe for variations in electron density between pulses is investigated. The primary limitation on bit rate is found to be the ability to generate laser drive pulses free of ringing or similar transients. This and the 300 ps pulsewidth, an experimental constraint, limit the bit rate to about 1 Gbit/s. However, by using this approach it appears that bit rates considerably higher than 2 Gbits/s could be reached with sufficiently accurate control of drive pulse shape. It is found that the laser bias and the current pulse area had to be controlled within 1 percent and 10 percent, respectively.

Torphammar, P.↗
NASA NTRS1991

Far field and wavefront characterization of a high-power semiconductor laser for free space optical communications

The spatial pointing angle and far field beamwidth of a high-power semiconductor laser are characterized as a function of CW power and also as a function of temperature. The time-averaged spatial pointing angle and spatial lobe width were measured under intensity-modulated conditions. The measured pointing deviations are determined to be well within the pointing requirements of the NASA Laser Communications Transceiver (LCT) program. A computer-controlled Mach-Zehnder phase-shifter interferometer is used to characterize the wavefront quality of the laser. The rms phase error over the entire pupil was measured as a function of CW output power. Time-averaged measurements of the wavefront quality are also made under intensity-modulated conditions. The measured rms phase errors are determined to be well within the wavefront quality requirements of the LCT program.

Cornwell, Donald M., Jr.↗
NASA NTRS2001

Theory and Simulation of Self- and Mutual-Diffusion of Carrier Density and Temperature in Semiconductor Lasers

Carrier diffusion and thermal conduction play a fundamental role in the operation of high-power, broad-area semiconductor lasers. Restricted geometry, high pumping level and dynamic instability lead to inhomogeneous spatial distribution of plasma density, temperature, as well as light field, due to strong light-matter interaction. Thus, modeling and simulation of such optoelectronic devices rely on detailed descriptions of carrier dynamics and energy transport in the system. A self-consistent description of lasing and heating in large-aperture, inhomogeneous edge- or surface-emitting lasers (VCSELs) require coupled diffusion equations for carrier density and temperature. In this paper, we derive such equations from the Boltzmann transport equation for the carrier distributions. The derived self- and mutual-diffusion coefficients are in general nonlinear functions of carrier density and temperature including many-body interactions. We study the effects of many-body interactions on these coefficients, as well as the nonlinearity of these coefficients for large-area VCSELs. The effects of mutual diffusions on carrier and temperature distributions in gain-guided VCSELs will be also presented.

Li, Jian-Zhong↗