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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2000

Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes

We show the first direct experimental correlation between the presence of closed core screw dislocations in 6H-SiC epilayers with recombination centers, as well as with some of the small growth pits on the epilayer surface in lightly-doped 6H-SiC Schottky diodes. At every Synchrotron White-Beam X-ray Topography (SWBXT)-identified closed core screw dislocation, an Electron Beam Induced Current (EBIC) image showed a dark spot indicating a recombination center, and Nomarski optical microscope and Atomic Force Microscope (AFM) images showed a corresponding small growth pit with a sharp apex on the surface of the epilayer.

Schnable, C. M.↗
NASA NTRS1996

Effect of Tilt Angle on the Morphology of SiC Epitaxial Films Grown on Vicinal (0001) SiC Substrates

In this study of 4H-SiC and 6H-SiC epitaxial films we found that film morphology was strongly dependent on the tilt angle of the substrate. Large surface steps (up to 25 nm high) due to step bunching were more prevalent at smaller tilt angles. Also, 4H films were more susceptible than 6H to 3C-SiC inclusions during growth. The lateral growth of steps from screw dislocations in low-tilt-angle substrates demonstrated that step bunching on the atomic scale was anisotropic with respect to growth direction for both 4H-SiC and 6H-SiC. A model explaining this behavior is presented. We observed and directly measured the Burgers vector of a 'super' screw dislocation in a 6H-SiC epilayer.

Powell, J. A.↗
NASA NTRS1996

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Source record↗
NASA NTRS1999

Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

Commercial epilayers are known to contain a variety of crystallographic imperfections. including micropipes, closed core screw dislocations. low-angle boundaries, basal plane dislocations, heteropolytypic inclusions, and non-ideal surface features like step bunching and pits. This paper reviews the limited present understanding of the operational impact of various crystal defects on SiC electrical devices. Aside from micropipes and triangular inclusions whose densities have been shrinking towards manageably small values in recent years, many of these defects appear to have little adverse operational and/or yield impact on SiC-based sensors, high-frequency RF, and signal conditioning electronics. However high-power switching devices used in power management and distribution circuits have historically (in silicon experience) demanded the highest material quality for prolonged safe operation, and are thus more susceptible to operational reliability problems that arise from electrical property nonuniformities likely to occur at extended crystal defects. A particular emphasis is placed on the impact of closed-core screw dislocations on high-power switching devices, because these difficult to observe defects are present in densities of thousands per cm,in commercial SiC epilayers. and their reduction to acceptable levels seems the most problematic at the present time.

Neudeck, Philip G.↗
DOE OSTI2020

Supertwisted spirals of layered materials enabled by growth on non-Euclidean surfaces

Using curves to make twists The growth of layered materials on flat substrates usually occurs in stacked layers, although defects or a lattice mismatch can induce strains that distort the shape of subsequent layers. However, these effects are usually small and can be uncontrolled. Zhao et al. now demonstrate the possibility of synthesizing multilayers of two-dimensional materials with certain twists between the layers induced by the presence of screw dislocations in combination with curved substrate surfaces. Different twist angles are achieved by varying the amount of nonplanarity and the character (conical or hyperbolic) of the surface. Science , this issue p. 442

Science & Technology - Other Topics↗
DOE OSTI2023

Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals

Here, several 4° off-axis 4H-SiC wafers with several hundred microns of initial-stage growth by PVT method are investigated by Synchrotron Monochromatic Beam X-ray Topography (SMBXT). Defect behavior across the seed/newly grown layer interface are demonstrated. Comparison of early stage grown layers to seed sample indicates generation of threading edge dislocation (TED) and threading screw dislocation (TSD)/ threading mixed dislocation (TMD) pairs at the interface while most basal plane dislocations (BPDs) are deflected into TEDs. The (0001) facet of the crystal is already formed at early stage growth at the edge of the wafer and high nitrogen incorporation in facet leads to conditions favorable for nucleation and glide of Shockley/double Shockley faults with layers of 3C-SiC deposited on facet acting as nuclei. Unique-shaped dislocations are observed at early stage growth, which are caused by deflection of TSDs/TMDs and TEDs by macrosteps near the periphery of the sample and the subsequent glide of the a components. The effect of the quality of the seed surface before growth is manifested as randomly oriented arrays of pairs of TEDs and TSDs/TMDs on the as grown surface resulting from residual surface damage from scratches.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Atomistic simulations of dislocation mobility in refractory high-entropy alloys and the effect of chemical short-range order

Abstract Refractory high-entropy alloys (RHEAs) are designed for high elevated-temperature strength, with both edge and screw dislocations playing an important role for plastic deformation. However, they can also display a significant energetic driving force for chemical short-range ordering (SRO). Here, we investigate mechanisms underlying the mobilities of screw and edge dislocations in the body-centered cubic MoNbTaW RHEA over a wide temperature range using extensive molecular dynamics simulations based on a highly-accurate machine-learning interatomic potential. Further, we specifically evaluate how these mechanisms are affected by the presence of SRO. The mobility of edge dislocations is found to be enhanced by the presence of SRO, whereas the rate of double-kink nucleation in the motion of screw dislocations is reduced, although this influence of SRO appears to be attenuated at increasing temperature. Independent of the presence of SRO, a cross-slip locking mechanism is observed for the motion of screws, which provides for extra strengthening for refractory high-entropy alloy system.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Phase-field dislocation modeling of cross-slip

The phase-field dislocation dynamics (PFDD) model is extended to simulate cross-slip in body-centered cubic materials. The model makes use of a non-orthogonal, body-centered cubic numerical grid such that all calculable points lie on dislocation glide planes. We demonstrate that the advanced PFDD model predicts a low-energy, non-planar core for screw dislocations and a planar core for edge dislocations. These core differences result in screw-edge character dependence in the critical stress to initiate glide and dislocation drag coefficients. Finally, we show that this model can be used to study the propensity of screw dislocations to cross-slip around or transmit through a coherent, crystallographic obstacle, depending on obstacle strength.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Absence of Off-Diagonal Long-Range Order in hcp 4 He Dislocation Cores

Here, the mass transport properties along dislocation cores in hcp 4 He are revisited by considering two types of edge dislocations as well as a screw dislocation, using a fully correlated quantum simulation approach. Specifically, we employ the zero-temperature path-integral ground state (PIGS) method together with ergodic sampling of the permutation space to investigate the fundamental dislocation core structures and their off-diagonal long-range order properties. It is found that the Bose-Einstein condensate fraction of such defective 4 He systems is practically null (≤ 10 –6 ), just as in the bulk defect-free crystal. These results provide compelling evidence for the absence of intrinsic superfluidity in dislocation cores in hcp 4 He and challenge the superfluid dislocation-network interpretation of the mass-flux-experiment observations, calling for further experimental investigation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1965

Cosmic chemistry.

Chemical nature and origin of solid particles formed in primordial solar nebula, examining growth mechanism based on screw dislocations present in preplanetary nebula

INTERPLANETARY DUST↗
DOE OSTI2022

Hydrogen induced dislocation core reconstruction in bcc tungsten

Dislocation, playing a crucial role in the plastic deformation of metals, can be significantly affected by introducing solute elements. Hydrogen (H) embrittlement is one such example, while the underlying mechanism for H affected dislocation structural stability and mobility remains unclear and the role of H has been controversial. Here, using first-principles calculations, we demonstrate that the effect of H on screw dislocation in bcc tungsten (W) is H concentration-dependent, signified by a H-induced transition of SD core structure. At low concentrations of H segregation, dislocation maintains the intrinsic easy-core structure, and H atoms are attached to the “periphery” of dislocation to enhance dislocation motion. In contrast, at high H concentrations, dislocation transforms into a hard-core, metal hydride-like structure, as H atoms become the “body” of dislocation to significantly reduce the dislocation mobility in W. Further, such local easy-to-hard transition can also be induced by the other solutes, including helium, carbon, nitrogen and oxygen. Our work sheds new light on the H-dislocation interactions in bcc W, having broad implications in the interstitial solute-related phenomena.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Transitions in the morphology and critical stresses of gliding dislocations in multiprincipal element alloys

Refractory multiprincipal element alloys (MPEAs) are promising material candidates for high-temperature, high-strength applications. However, their deformation mechanisms, particularly at the dislocation scale, are unusual compared to those of conventional alloys, making it challenging to understand the origin of their high strength. Here, using an atomistically informed phase-field dislocation dynamics model, we study transitions in the morphology and critical stresses of long gliding screw dislocations over extended distances in a refractory MPEA. The model MPEA crystal accounts for the atomic-scale fluctuations in chemical composition across the glide planes via spatially correlated lattice energies and for the differences in glide resistances between screw and edge dislocations of unit length. Here, we show that the dislocation moves in a stop-start motion, alternating between wavy morphology in free flight and nearly recovered straight screw orientation in full arrest. The periods of wavy glide are due to variable kink-pair formation and migration rates along the length, where portions with higher rates glide more quickly. The critical stress to initiate motion corresponds to the stress required to form and migrate a kink pair at the weakest region along the length of the dislocation. Heterogeneity in lattice energy leads to variability in the local stress-strain response and to a strain hardening-like response, in which the critical stress to reactivate glide increases with glide distance. Statistical assessment of hundreds of realizations of dislocations indicates that the amount of hardening directly scales with the dispersion in underlying lattice energy.

3-dimensional systems↗
NASA NTRS1978

Modified lattice-statics approach to dislocation calculations. II - Application

The atomic structure of a screw dislocation core of the 110 line type in aluminum is calculated by the modified lattice-statics method developed in the preceding paper. The method includes anharmonic as well as harmonic forces and permits relaxation of the atoms in all three dimensions. All forces used in the present calculations were derived from a first-principles interatomic pair potential obtained via pseudopotential theory. Several significant differences from the ordinary lattice statics results are noted, including the displacement field, Peierl's energy barrier, and the equilibrium core-center location.

Esterling, D. M.↗
DOE OSTI2022

Limiting velocities and transonic dislocations in Mg

To accurately predict the mechanical response of materials, especially at high strain rates, it is important to account for dislocation velocities in these regimes. Under these extreme conditions, it has been hypothesized that dislocations can move faster than the speed of sound. However, the presence of such dislocations remains elusive due to challenges associated with measuring these experimentally. In this work, molecular dynamics simulations were used to investigate the dislocation velocities for the basal edge, basal screw, prismatic edge, and prismatic screw dislocations in Mg in the sub-, trans-, and supersonic regimes. Also, our results show that only prismatic edge dislocations achieve supersonic velocities. Furthermore, this work demonstrates that the discrepancy between the theoretical limiting velocity and the MD results for Mg is due to its sensitivity to large hydrostatic stress around the dislocation core, which was not the case for fcc metals such as Cu.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Effect of hydrogen on plasticity of $α$-Fe: A multi-scale assessment

A multi-scale study was carried out to quantify the effect of interstitial hydrogen concentration on plasticity in $α$-Fe. Here, in this work, the influence of hydrogen on the screw dislocation glide behavior was examined across several length-scales. The insights obtained were integrated to provide an accurate continuum description for the effect of hydrogen on the dislocation based plasticity in polycrystalline $α$-Fe. At the outset of this work, a new Fe—H interatomic potential was formulated that enhanced the atomistic estimation of the variation in dislocation glide behavior in presence of hydrogen. Next, the dislocation core reconstruction observed due to the addition of hydrogen using atomistic simulations was validated with the help of large-scale DFT calculations based on the DFT-FE framework. Several atomistic simulations were carried out to comprehensively quantify the effect of hydrogen on the non-Schmid behavior exhibited during the dislocation glide in $α$-Fe. Finally, crystal plasticity simulations were carried out to understand the effect of hydrogen on the meso-scale deformation behavior of polycrystalline $α$-Fe.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Structure and migration of heavily irradiated grain boundaries and dislocations in Ni in the athermal limit

The microstructural evolution at and near preexisting grain boundaries (GBs) and dislocations in materials under high radiation doses is still poorly understood. In this work, we use the creation relaxation algorithm (CRA) developed for atomistic modeling of high-dose irradiation in bulk materials to probe the athermal limit of saturation of GB and dislocation core regions under irradiation in fcc Ni. We find that, upon continuously subjecting a single dislocation or GB to Frenkel pair creation in the athermal limit, a local steady-state disordered defect structure is reached with excess properties that fluctuate around constant values. Case studies are given for a straight screw dislocation which elongates into a helix under irradiation and several types of low- and high-angle GBs, which exhibit coupled responses such as absorption of extrinsic dislocations, roughening, and migration. A positive correlation is found between the initial GB energy and the local steady-state GB energy under irradiation across a wide variety of GB types. Metastable GB structures with similar density in the defect core region but different initial configurations are found to converge to the same limiting structure under CRA. The mechanical responses of pristine and irradiated dislocations and GB structures are compared under an applied shear stress. Irradiated screw and edge dislocations are found to exhibit a hardening response, migrating at larger flow stresses than their pristine counterparts. Mobile GBs are found to exhibit softening or hardening responses depending on GB character. Although some GBs recover their initial pristine structures upon migration outside of the radiation zone, many GBs sustain different flow stresses corresponding to altered mobile core structures.

36 MATERIALS SCIENCE↗
NASA NTRS1980

Dislocation dissociation in some f.c.c. metals

The dissociation of a perfect screw dislocation into a stacking fault in an f.c.c. lattice is modeled by the modified lattice statics. The interatomic potentials are obtained from the work of Esterling and Swaroop and differ substantially from those empirical potentials usually employed in defect simulations. The calculated stacking fault widths for aluminum, copper, and silver are in good agreement with weak beam microscopy results.

Esterling, D. M.↗