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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2008

Dependence of Adaptive Cross-correlation Algorithm Performance on the Extended Scene Image Quality

Recently, we reported an adaptive cross-correlation (ACC) algorithm to estimate with high accuracy the shift as large as several pixels between two extended-scene sub-images captured by a Shack-Hartmann wavefront sensor. It determines the positions of all extended-scene image cells relative to a reference cell in the same frame using an FFT-based iterative image-shifting algorithm. It works with both point-source spot images as well as extended scene images. We have demonstrated previously based on some measured images that the ACC algorithm can determine image shifts with as high an accuracy as 0.01 pixel for shifts as large 3 pixels, and yield similar results for both point source spot images and extended scene images. The shift estimate accuracy of the ACC algorithm depends on illumination level, background, and scene content in addition to the amount of the shift between two image cells. In this paper we investigate how the performance of the ACC algorithm depends on the quality and the frequency content of extended scene images captured by a Shack-Hatmann camera. We also compare the performance of the ACC algorithm with those of several other approaches, and introduce a failsafe criterion for the ACC algorithm-based extended scene Shack-Hatmann sensors.

wave-front sensing and control↗
DOE OSTI2025

Datasets for Custom-trained Machine-learning Interatomic Potentials: Nitric Acid Aqueous Solution

This dataset was generated using an iterative active learning strategy with the ArcaNN software package (https://github.com/arcann-chem/arcann_training) to train machine-learning interatomic potentials (MLIPs) for aqueous nitric acid. Each active-learning cycle consisted of three stages: (1) training, (2) exploration, and (3) labeling. The initial training set comprised approximately 800 randomly selected configurations from a previous study by Lewis et al. (https://doi.org/10.1021/jp205510q), which investigated nitric acid solutions at 2, 3, 4, and 5 mol/L. For all configurations, single-point calculations of atomic forces and total energies were performed at the quantum density functional theory BLYP-D2 and PBE-D3 levels of theory using the CP2K Quickstep module. Valence electrons were treated explicitly, while core electrons on all atoms were represented by norm-conserving Goedecker–Teter–Hutter (GTH) pseudopotentials. Long-range dispersion interactions were accounted for using Grimme dispersion corrections. Wave functions were expanded in a mixed Gaussian-and-plane-wave scheme using TZV2P-MOLOPT basis sets for all elements and an 800 Ry auxiliary plane-wave cutoff for the electron density. Self-consistent field convergence was accelerated using orbital transformation and Direct Inversion in the Iterative Subspace, with a convergence threshold of 10^{-6}. All single-point calculations were carried out in periodic orthorhombic cells whose dimensions match those of the molecular configurations sampled from earlier trajectories. The CELL_REF keyword in CP2K was used to define a fixed reference cell, ensuring consistency in the reference data used for MLIP training, particularly when cell fluctuations are present in NpT simulations. The resulting high-fidelity energies and forces constitute the ground-truth labels used to train the MLIPs contained in this dataset.

Dinpajooh, Mohammadhasan [Pacific Northwest Nation↗
DOE OSTI2024

Enhanced passivation and stability of negative charge injected SiN x with higher nitrogen content on the boron diffused surface of n-type Si solar cells

This paper explores the potential of the negatively charged SiN x using plasma charge injection technology to passivate the front textured boron-diffused emitter of n-type Si solar cells. The high-x value single SiN x layer with x ≥ 1.30 (x = N/Si) previously developed for the planarized rear-side passivation of p-type silicon solar cells, with an excellent passivation and charge stability, was found to be unacceptable for the passivation on the front textured boron emitter of n-type cells due to a severe bulk lifetime degradation issue. Therefore, in this study, we investigated a new concept of depositing a dual-x SiN x with a low-x SiN x layer (x~1.01) on top of a high-x SiN x layer (x~1.30) for passivation of the front textured rough surface of boron diffused emitter in n-type cells. Here, the optimized dual-x SiN x stack reveals the promise of charge retention for more than 25 years in field operation as well as excellent passivation of boron-doped emitter without bulk lifetime degradation. N-type cells with the optimized dual-x SiN x after charge injection show comparable cell performance to Al 2 O 3 passivated reference cells. The results of cell-level light stability tests using one-cell minimodules exhibit cell performance decay characteristics similar to the traditional Al 2 O 3 /SiN x passivated reference module.

14 SOLAR ENERGY↗
NASA NTRS1990

The effect of the low Earth orbit environment on space solar cells

The results of a space flight experiment designed to provide reference cell standards for photovoltaic measurements as well as to investigate the solar spectrum and the effect of long-term exposure of solar cells to the space environment are presented. This experiment, the Advanced Photovoltaic Experiment (APEX), was launched into low Earth orbit as part of the Long Duration Exposure Facility in 1984 and retrieved 69 months later. APEX contained over 150 solar cells of a wide variety of materials, designs and coverglasses. Data on cell performance was recorded for the first year-on-orbit.

Brinker, David J.↗
NASA NTRS2017

Apparatus and Methods for Photoacoustic Measurement of Light Absorption of Particulate and Gaseous Species

In one embodiment, a photoacoustic effect measurement instrument for measuring a species (e.g., a species of PM) in a gas employs a pair of differential acoustic cells including a sample cell that receives sample gas including the species, and a reference cell that receives a filtered version of the sample gas from which the species has been substantially removed. An excitation light source provides an amplitude modulated beam to each of the acoustic cells. An array of multiple microphones is mounted to each of the differential acoustic cells, and measures an acoustic wave generated in the respective acoustic cell by absorption of light by sample gas therein to produce a respective signal. The microphones are isolated from sample gas internal to the acoustic cell by a film. A preamplifier determines a differential signal and a controller calculates concentration of the species based on the differential signal.

Yu, Zhenhong↗
NASA NTRS1990

Real-time garbage collection for list processing using restructured cells for increased reference counter size

In a list processing system, small reference counters are maintained in conjunction with memory cells for the purpose of identifying memory cells that become available for re-use. The counters are updated as references to the cells are created and destroyed, and when a counter of a cell is decremented to logical zero the cell is immediately returned to a list of free cells. In those cases where a counter must be incremented beyond the maximum value that can be represented in a small counter, the cell is restructured so that the additional reference count can be represented. The restructuring involves allocating an additional cell, distributing counter, tag, and pointer information among the two cells, and linking both cells appropriately into the existing list structure.

Shuler, Jr., Robert L.↗
DOE OSTI2022

Temperature and illumination dependence of silicon heterojunction solar cells with a wide range of wafer resistivities

Abstract Recently, the significant improvements in the surface and contact passivation of silicon (Si) solar cells as well as their bulk quality have shifted their operating point to higher injections. Hence, they are less dependent on wafer doping. This shift opens an opportunity of using high‐resistivity wafers for practical photovoltaic applications, introducing a promising approach to push the cell efficiency towards the intrinsic limit and to improve the module reliability by increasing the cell breakdown voltage. Therefore, insights into the performance of Si solar cells using high‐resistivity wafers at various operating temperatures are of significant interest. In this study, we investigate the temperature‐ and illumination‐dependent performance of Si heterojunction (SHJ) solar cells using a wide range of wafer resistivities (between 3 and 1000 Ω⋅cm). Although a reduction in the passivation quality of the passivating contacts is observed at elevated temperature, the impact on the temperature coefficient of the open‐circuit voltage (TC V oc )—the dominant contributor to the temperature coefficient (TC) of the cell efficiency—is very limited. Their TC V oc are still dominated by the temperature dependence of the effective intrinsic carrier concentration. Furthermore, we also find that the investigated cells are more sensitive to temperature variation at lower illumination intensities. It is noteworthy that the efficiency of the cells fabricated using high‐resistivity wafers is comparable to that of the reference cells at any given temperature, highlighting the potential of using high‐resistivity wafers for solar cells.

14 SOLAR ENERGY↗
NASA NTRS1992

Nickel hydrogen cell design: A designer's aspect

Information is given to give insight into the methodology of nickel hydrogen cell design and the decipherment of the battery cell reference guide that was distributed to many of Gates Energy Products' customers. Cell design, stacking design, charge capacity, and dynamic response are discussed in general terms.

Rehm, Raymond↗
NASA NTRS1982

The effect of different solar simulators on the measurement of short-circuit current temperature coefficients

Gallium arsenide solar cells are considered for several high temperature missions in space. Both near-Sun and concentrator missions could involve cell temperatures on the order of 200 C. Performance measurements of cells at elevated temperatures are usually made using simulated sunlight and a matched reference cell. Due to the change in bandgap with increasing temperature at portions of the spectrum where considerable simulated irradiance is present, there are significant differences in measured short circuit current at elevated temperatures among different simulators. To illustrate this, both experimental and theoretical data are presented for gallium arsenide cells.

Curtis, H. B.↗
NASA NTRS1993

Thin Film GaAs For Space--Moving Out of the Laboratory

In 1991, NASA-JPL completed the APSA (Advanced Photovoltaic Solar Array) program, demonstrating a lightweight deployable flexible array wing capable of 130 W/kg specific performance, a substantial improvement over convetional flight hardware. The design was based on the use of thin (55 microns) silicon or thin (100 microns) GaAs/Ge solar cells (Reference 1). Further array performance enhancements will require the implementation of a new advanced Solar Cell.

Film GaAs Solar Array↗
NASA NTRS1984

Investigation of accelerated stress factors and failure/degradation mechanisms in terrestrial solar cells

Research on the reliability of terrestrial solar cells was performed to identify failure/degradation modes affecting solar cells and to relate these to basic physical, chemical, and metallurgical phenomena. Particular concerns addressed were the reliability attributes of individual single crystalline, polycrystalline, and amorphous thin film silicon cells. Results of subjecting different types of crystalline cells to the Clemson accelerated test schedule are given. Preliminary step stress results on one type of thin film amorphous silicon (a:Si) cell indicated that extraneous degradation modes were introduced above 140 C. Also described is development of measurement procedures which are applicable to the reliability testing of a:Si solar cells as well as an approach to achieving the necessary repeatability of fabricating a simulated a:Si reference cell from crystalline silicon photodiodes.

Lathrop, J. W.↗
NASA NTRS1987

A new approach to importance sampling for the simulation of false alarms

In this paper a modified importance sampling technique for improving the convergence of Importance Sampling is given. By using this approach to estimate low false alarm rates in radar simulations, the number of Monte Carlo runs can be reduced significantly. For one-dimensional exponential, Weibull, and Rayleigh distributions, a uniformly minimum variance unbiased estimator is obtained. For Gaussian distribution the estimator in this approach is uniformly better than that of previously known Importance Sampling approach. For a cell averaging system, by combining this technique and group sampling, the reduction of Monte Carlo runs for a reference cell of 20 and false alarm rate of lE-6 is on the order of 170 as compared to the previously known Importance Sampling approach.

Lu, D.↗
NASA NTRS2008

Algorithm for Wavefront Sensing Using an Extended Scene

A recently conceived algorithm for processing image data acquired by a Shack-Hartmann (SH) wavefront sensor is not subject to the restriction, previously applicable in SH wavefront sensing, that the image be formed from a distant star or other equivalent of a point light source. That is to say, the image could be of an extended scene. (One still has the option of using a point source.) The algorithm can be implemented in commercially available software on ordinary computers. The steps of the algorithm are the following: 1. Suppose that the image comprises M sub-images. Determine the x,y Cartesian coordinates of the centers of these sub-images and store them in a 2xM matrix. 2. Within each sub-image, choose an NxN-pixel cell centered at the coordinates determined in step 1. For the ith sub-image, let this cell be denoted as si(x,y). Let the cell of another subimage (preferably near the center of the whole extended-scene image) be designated a reference cell, denoted r(x,y). 3. Calculate the fast Fourier transforms of the sub-sub-images in the central NxN portions (where N < N and both are preferably powers of 2) of r(x,y) and si(x,y). 4. Multiply the two transforms to obtain a cross-correlation function Ci(u,v), in the Fourier domain. Then let the phase of Ci(u, v) constitute a phase function, phi(u,v). 5. Fit u and v slopes to phi (u,v) over a small u,v subdomain. 6. Compute the fast Fourier transform, Si(u,v) of the full NxN cell si(x,y). Multiply this transform by the u and phase slopes obtained in step 4. Then compute the inverse fast Fourier transform of the product. 7. Repeat steps 4 through 6 in an iteration loop, cumulating the u and slopes, until a maximum iteration number is reached or the change in image shift becomes smaller than a predetermined tolerance. 8. Repeat steps 4 through 7 for the cells of all other sub-images.

Sidick, Erkin↗
NASA NTRS1981

The correction for spectral mismatch effects on the calibration of a solar cell when using a solar simulator

A general expression was derived to enable calculation of the calibration error. The information required includes the relative spectral response of the reference cell, the relative spectral response of the cell under test, and the relative spectral irradiance of the simulator (over the spectral range defined by cell response). The spectral irradiance of the solar AMX is assumed to be known.

Seaman, C. H.↗
DOE OSTI2020

Measurements of Six-Junction Concentrator Solar Cells

Accurate measurements of six-junction inverted metamorphic concentrator solar cells under AM1.5 direct spectrum are obtained by adjusting the spectrum of a tunable high-intensity solar simulator with custom mirrors. Isotype reference cells and broadband InGaAs QE calibration cells were developed for accurate measurements. Modeling and varying the illumination show that an unavoidable 15% - 17% overillumination on the sixth junction does not result in significant error of these 6J IMM devices. Spectrally adjusted flash measurements are independently confirmed by NREL's Cell and Module Performance team. Concentration measurements of a 6J IMM solar cell resulted in 47.1 ± 3.2% (absolute) efficiency at 143 suns.

41 EE - Solar Energy Technologies Office (EE-4S)↗
NASA NTRS1985

Accelerated stress testing of amorphous silicon solar cells

A technique for performing accelerated stress tests of large-area thin a-Si solar cells is presented. A computer-controlled short-interval test system employing low-cost ac-powered ELH illumination and a simulated a-Si reference cell (seven individually bandpass-filtered zero-biased crystalline PIN photodiodes) calibrated to the response of an a-Si control cell is described and illustrated with flow diagrams, drawings, and graphs. Preliminary results indicate that while most tests of a program developed for c-Si cells are applicable to a-Si cells, spurious degradation may appear in a-Si cells tested at temperatures above 130 C.

Stoddard, W. G.↗
NASA NTRS1980

A study on the electrolysis of sulfur dioxide and water for the sulfur cycle hydrogen production process

Experimental electrolysis cells using various platinum catalyzed carbon electrodes were tested. When operated at 200 mA/sq cm current density using 50 w/o acid at 50 C and 1 atm, a reference cell required 1.22 volts and degraded rapidly. After several improvements were incorporated into electrodes and the test cell configuration, a later cell required only 0.77 volts under identical operating conditions. At a lower current density, 100 mA/sq cm, the cell required only 0.63 volts. Kinetic studies on metal electrodes, measurements of temperature effects on electrode kinetics, investigations of electrocatalytic activities of metal electrodes over a wide range of acid concentrations, cyclic voltametric studies and evaluation of alternate catalysts were also conducted. From diffusivity experiments, a cation exchange membrane material, P-4010, exhibited an excellent diffusion coefficient, more than two orders of magnitude lower than that of rubber. Ionic resistivity measurements of eight materials showed that microporous rubber had the lowest resistivity.

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