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Report describes experimental and computer-simulation study of multiple-bit errors caused by impingement of single energetic ions on 256-Kb dynamic random-access memory (DRAM) integrated circuit. Studies illustrate effects of different mechanisms for transport of charge from ion tracks to various elements of integrated circuits. Shows multiple-bit errors occur in two different types of clusters about ion tracks causing them.
The spread of charge induced by an ion track in an integrated circuit and its subsequent collection at sensitive nodal junctions can cause multiple-bit errors. The authors have experimentally and analytically investigated this phenomenon using a 256-kb dynamic random-access memory (DRAM). The effects of different charge-transport mechanisms are illustrated, and two classes of ion-track multiple-bit error clusters are identified. It is demonstrated that ion tracks that hit a junction can affect the lateral spread of charge, depending on the nature of the pull-up load on the junction being hit. Ion tracks that do not hit a junction allow the nearly uninhibited lateral spread of charge.
A compact input output (I/O) numerical processor capable of performing floating-point, multiple precision and other arithmetic functions at execution times which are at least 100 times faster than comparable software emulation is described. The I/O device is a microcomputer system containing a 16 bit microprocessor, a numerical coprocessor with eight 80 bit registers running at a 5 MHz clock rate, 18K random access memory (RAM) and 16K electrically programmable read only memory (EPROM). The processor acts as an intelligent slave to the host computer and can be programmed in high order languages such as FORTRAN and PL/M-86.
This article considers a quaternary direct-sequence code-division multiple-access (DS-CDMA) communication system with asymmetric quadrature phase-shift-keying (AQPSK) modulation for unequal error protection (UEP) capability. Both time synchronous and asynchronous cases are investigated. An expression for the probability distribution of the multiple-access interference is derived. The exact bit-error performance and the approximate performance using a Gaussian approximation and random signature sequences are evaluated by extending the techniques used for uniform quadrature phase-shift-keying (QPSK) and binary phase-shift-keying (BPSK) DS-CDMA systems. Finally, a general system model with unequal user power and the near-far problem is considered and analyzed. The results show that, for a system with UEP capability, the less protected data bits are more sensitive to the near-far effect that occurs in a multiple-access environment than are the more protected bits.
The conceptual design of a highly reliable 10 to the 8th power-bit bubble domain memory for the space program is described. The memory has random access to blocks of closed-loop shift registers, and utilizes self-contained bubble domain chips with on-chip decoding. Trade-off studies show that the highest reliability and lowest power dissipation is obtained when the memory is organized on a bit-per-chip basis. The final design has 800 bits/register, 128 registers/chip, 16 chips/plane, and 112 planes, of which only seven are activated at a time. A word has 64 data bits +32 checkbits, used in a 16-adjacent code to provide correction of any combination of errors in one plane. 100 KHz maximum rotational frequency keeps power low (equal to or less than, 25 watts) and also allows asynchronous operation. Data rate is 6.4 megabits/sec, access time is 200 msec to an 800-word block and an additional 4 msec (average) to a word. The fabrication and operation are also described for a 64-bit bubble domain memory chip designed to test the concept of on-chip magnetic decoding. Access to one of the chip's four shift registers for the read, write, and clear functions is by means of bubble domain decoders utilizing the interaction between a conductor line and a bubble.
Methods for data analysis, data compression including universal coding, storage and retrieval on random access storage devices, and display were developed and implemented on the GSFC Interdata computer. The original 64 bit per frequency band representation was reduced to 10 bits through source coding/universal coding, a compression ratio of 6.4, prior to storage. Rapid encoding/decoding was achieved by the algorithms used so that rapid random access is retained.
The processing subsystem of a land based radar polarimeter was designed and constructed. This subsystem is labeled the remote data acquisition and distribution system (RDADS). The radar polarimeter, an experimental remote sensor, incorporates the RDADS to control all operations of the sensor. The RDADS uses industrial standard components including an 8-bit microprocessor based single board computer, analog input/output boards, a dynamic random access memory board, and power supplis. A high-speed digital electronics board was specially designed and constructed to control range-gating for the radar. A complete system of software programs was developed to operate the RDADS. The software uses a powerful real time, multi-tasking, executive package as an operating system. The hardware and software used in the RDADS are detailed. Future system improvements are recommended.
Proposed random-access integrated-circuit electronic memory offers nonvolatile magnetic storage. Bits stored magnetically and read out with Hall-effect sensors. Advantages include short reading and writing times and high degree of immunity to both single-event upsets and permanent damage by ionizing radiation. Use of same basic material for both transistors and sensors simplifies fabrication process, with consequent benefits in increased yield and reduced cost.
A versatile electronic timing-and-control unit, denoted a rotorcraft strobe controller, has been developed for use in controlling stroboscopes, lasers, video cameras, and other instruments for capturing still images of rotating machine parts especially helicopter rotors. This unit is designed to be compatible with a variety of sources of input shaftangle or timing signals and to be capable of generating a variety of output signals suitable for triggering instruments characterized by different input-signal specifications. It is also designed to be flexible and reconfigurable in that it can be modified and updated through changes in its control software, without need to change its hardware. Figure 1 is a block diagram of the rotorcraft strobe controller. The control processor is a high-density complementary metal oxide semiconductor, singlechip 8-bit microcontroller. It is connected to a 32K x 8 nonvolatile static random-access memory (RAM) module. Also connected to the control processor is a 32K 8 electrically programmable read-only-memory (EPROM) module, which is used to store the control software. Digital logic support circuitry is implemented in a field-programmable gate array (FPGA). A 240 x 128-dot, 40- character 16-line liquid-crystal display (LCD) module serves as a graphical user interface; the user provides input through a 16-key keypad mounted next to the LCD. A 12-bit digital-to-analog converter (DAC) generates a 0-to-10-V ramp output signal used as part of a rotor-blade monitoring system, while the control processor generates all the appropriate strobing signals. Optocouplers are used to isolate all input and output digital signals, and optoisolators are used to isolate all analog signals. The unit is designed to fit inside a 19-in. (.48-cm) rack-mount enclosure. Electronic components are mounted on a custom printed-circuit board (see Figure 2). Two power-conversion modules on the printedcircuit board convert AC power to +5 VDC and 15 VDC, respectively.
A television tube is a useful way to record a many-element picture such as is obtained from an echelle spectrograph. The signal on the tube target is scanned and relayed to the data-processing center where it must be reconstituted into the scene that was present in the focal plane of the spectrograph camera. A typical television frame will contain four million bits of information which must be processed to remove transmission errors and random noise pulses, to remove periodic noise, to correct for optical and electrical distortion, to remove sensitivity variations across the face of the tube, to calibrate from the photoelectrons back to incident energy, and to provide a wavelength scale. Results of a study of these problems is presented.
A versatile neural-net model is explained in terms familiar to computer scientists and engineers. It is called the sparse distributed memory, and it is a random-access memory for very long words (for patterns with thousands of bits). Its potential utility is the result of several factors: (1) a large pattern representing an object or a scene or a moment can encode a large amount of information about what it represents; (2) this information can serve as an address to the memory, and it can also serve as data; (3) the memory is noise tolerant--the information need not be exact; (4) the memory can be made arbitrarily large and hence an arbitrary amount of information can be stored in it; and (5) the architecture is inherently parallel, allowing large memories to be fast. Such memories can become important components of future computers.
In this article we apply transfer function bounding techniques to obtain upper bounds on the bit-error rate for maximum likelihood decoding of turbo codes constructed with random permutations. These techniques are applied to two turbo codes with constraint length 3 and later extended to other codes. The performance predicted by these bounds is compared with simulation results. The bounds are useful in estimating the 'error floor' that is difficult to measure by simulation, and they provide insight on how to lower this floor. More refined bounds are needed for accurate performance measures at lower signal-to-noise ratios.
As sub-100nm CMOS technologies gather interest, the radiation effects performance of these technologies provide a significant challenge. In this talk, we shall discuss the radiation testing challenges as related to commercial memory devices. The focus will be on complex test and failure modes emerging in state-of-the-art Flash non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs), which are volatile. Due to their very high bit density, these device types are highly desirable for use in the natural space environment. In this presentation, we shall discuss these devices with emphasis on considerations for test and qualification methods required.
A method for measuring time delay and distance may include providing an electromagnetic radiation carrier frequency and modulating one or more of amplitude, phase, frequency, polarization, and pointing angle of the carrier frequency with a return to zero (RZ) pseudo random noise (PN) code. The RZ PN code may have a constant bit period and a pulse duration that is less than the bit period. A receiver may detect the electromagnetic radiation and calculate the scattering profile versus time (or range) by computing a cross correlation function between the recorded received signal and a three-state RZ PN code kernel in the receiver. The method also may be used for pulse delay time (i.e., PPM) communications.
Optical and magnetic variants in the design of trillion-bit read/write memories are compared and tabulated. Components and materials suitable for a random access read/write nonmoving memory system are examined, with preference given to holography and photoplastic materials. Advantages and deficiencies of photoplastics are reviewed. Holographic page composer design, essential features of an optical memory with no moving parts, fiche-oriented random access memory design, and materials suitable for an efficient photoplastic fiche are considered. The optical variants offer advantages in lower volume and weight at data transfer rates near 1 Mbit/sec, but power drain is of the same order as for the magnetic variants (tape memory, disk memory). The mechanical properties of photoplastic film materials still leave much to be desired.
Circuit extracts clock signal from random non-return-to-zero data stream, locking onto clock within one bit period at 1-gigabitper-second data rate. Circuit used for synchronization in opticalfiber communications. Derives speed from very short response time of gallium arsenide metal/semiconductor field-effect transistors (MESFET's).
Report presents results of experiments where multiple-bit errors were induced in 256-kbit commercial integrated-circuit dynamic random-access memory (DRAM) by variety of normally incident heavy ions. Idea demonstrates utility of DRAM and methods used to analyze experimental data, with view towards applying methods and data to other digital integrated circuits.
At HiTEC2018, NASA Glenn Research Center reported the first demonstration of yearlong 500°C operation of ceramic-packaged “Generation 10” ~200-transistor integrated circuits (ICs) based on two-level interconnect silicon carbide (4H-SiC) junction field effect transistors and resistors (JFET-R). This HiTEC 2021submissionupdateson-going efforts at NASA Glenn spanning two subsequent prototype IC generations “11 and 12” to increase both complexity and durability of these ICs. Increased chip complexities of around 1000 transistors/chip for Gen. 11and near 3000 transistors/chip for Gen. 12 aremade possibleby reductions in minimum layout feature sizes (including resistorwidth shrinkage from 6 μm to 2μm) coupled with enlarged die size (from 3x3 mm to 5x5mm). Gen. 11 ICs electrically tested to date include an 8-bit delta-sigma analog to digital converter (ADC) as well as upscaled random access memory (RAM)and nearly 1 kbit read only memory (ROM). However, Gen. 11 prototype ICs exhibited significantly lower yield and durability than Gen. 10 ICs. Development of revised processing is being investigated towards mitigating these issues in subsequentGen. 12 fabrication runcurrentlyin progress.