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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity

Silicon is the most scalable optoelectronic material but has suffered from its inability to generate directly and efficiently classical or quantum light on-chip. Scaling and integration are the most fundamental challenges facing quantum science and technology. We report an all-silicon quantum light source based on a single atomic emissive center embedded in a silicon-based nanophotonic cavity. We observe a more than 30-fold enhancement of luminescence, a near-unity atom-cavity coupling efficiency, and an 8-fold acceleration of the emission from the all-silicon quantum emissive center. Our work opens immediate avenues for large-scale integrated cavity quantum electrodynamics and quantum light-matter interfaces with applications in quantum communication and networking, sensing, imaging, and computing.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Thermal Stability of the Dot-in-Well Gain Medium for Photonic Crystal Surface Emitting Lasers

Self-assembled quantum dots (QDs) embedded in InGaAs quantum wells (QWs) are used as active regions for photonic-crystal surface-emitting lasers (PCSELs). An epitaxial regrowth method is developed to fabricate the dot-in-well (DWELL) PCSELs. Here, the epitaxial regrowth starts with the growth of a partial laser structure containing bottom cladding, waveguide, active region, and the photonic crystal (PC) layer. The PC layer is patterned to realize the cavity. Subsequently a top cladding layer is regrown to complete the laser structure. During the regrowth of the top cladding layer, the partial laser structure is subjected to high growth temperatures in excess of 600 °C resulting in an unintentional annealing of the active region. This annealing of the active region can alter the QDs by changing their size resulting in a blue shift in photoluminescence (PL) and narrowing PL emission. This effect results in the misaligning of the gain peak and the cavity resonance, resulting in sub-optimal lasing performance. DWELL active regions are known to have better thermal stability compared to both QDs and QWs and could be an ideal candidate for regrown PCSELs. We successfully demonstrate an optically-pumped epitaxially-regrown DWELL PCSEL with an emission wavelength of 1230 nm operating at room temperature. Furthermore, the DWELL active region shows excellent emission wavelength stability and intensity despite the high temperature regrowth process.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Embedding via the Exact Factorization Approach

We present a quantum electronic embedding method derived from the exact factorization approach to calculate static properties of a many-electron system. The method is exact in principle but the practical power lies in utilizing input from a low-level calculation on the entire system in a high-level method computed on a small fragment, as in other embedding methods. Here, the exact factorization approach defines an embedding Hamiltonian on the fragment. Further, various Hubbard models demonstrate that remarkably accurate ground-state energies are obtained over the full range of weak to strongly correlated systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Method for fabricating embedded nanostructures with arbitrary shape

A layered heterostructure, comprising alternating layers of different semiconductors, wherein one of the atom species of one of the semiconductors has a faster diffusion rate along an oxidizing interface than an atom species of the other semiconductor at an oxidizing temperature, can be used to fabricate embedded nanostructures with arbitrary shape. The result of the oxidation will be an embedded nanostructure comprising the semiconductor having slower diffusing atom species surrounded by the semiconductor having the higher diffusing atom species. The method enables the fabrication of low- and multi-dimensional quantum-scale embedded nanostructures, such as quantum dots (QDs), toroids, and ellipsoids.

Wang, George T.↗
DOE OSTI2022

Intertwined spin, charge, and pair correlations in the two-dimensional Hubbard model in the thermodynamic limit

Significance The high-temperature superconducting cuprates are governed by intertwined striped magnetic and charge orders, in addition to superconductivity. Remarkably similar behavior has also been seen in numerical calculations for the Hubbard model describing the copper–oxygen layers in these materials. Finite-cluster methods typically find that spin- and charge-stripe order dominates, while embedded quantum-cluster methods, which access the thermodynamic limit, often conclude that superconductivity does. Here, we report the observation of fluctuating spin and charge stripes in an embedded cluster calculation for the Hubbard model. This discovery demonstrates that striped states survive in the thermodynamic limit and allows us to study their influence on the model’s superconducting properties, where we find evidence for pair-density-wave correlations intertwined with the stripe correlations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

3D Bragg Coherent Diffraction Imaging of Extended Nanowires: Defect Formation in Highly Strained InGaAs Quantum Wells

InGaAs quantum wells embedded in GaAs nanowires can serve as compact near-infrared emitters for direct integration onto Si complementary metal oxide semiconductor technology. While the core–shell geometry in principle allows for a greater tuning of composition and emission, especially farther into the infrared, the practical limits of elastic strain accommodation in quantum wells on multifaceted nanowires have not been established. One barrier to progress is the difficulty of directly comparing the emission characteristics and the precise microstructure of a single nanowire. Here, in this study, we report an approach to correlating quantum well morphology, strain, defects, and emission to understand the limits of elastic strain accommodation in nanowire quantum wells specific to their geometry. We realize full 3D Bragg coherent diffraction imaging (BCDI) of intact quantum wells on vertically oriented epitaxial nanowires, which enables direct correlation with single-nanowire photoluminescence. By growing In 0.2 Ga 0.8 As quantum wells of distinct thicknesses on different facets of the same nanowire, we identified the critical thickness at which defects are nucleated. A correlation with a traditional transmission electron microscopy analysis confirms that BCDI can image the extended structure of defects. Finite element simulations of electron and hole states explain the emission characteristics arising from strained and partially relaxed regions. This approach, imaging the 3D strain and microstructure of intact nanowire core–shell structures with application-relevant dimensions, can aid the development of predictive models that enable the design of new compact infrared emitters.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

A New Route to Quantum-Scale Structures through a Novel Enhanced Germanium Diffusion Mechanism

This project sought to develop a fundamental understanding of the mechanisms underlying a newly observed enhanced germanium (Ge) diffusion process in silicon germanium (SiGe) semiconductor nanostructures during thermal oxidation. Using a combination of oxidationdiffusion experiments, high resolution imaging, and theoretical modeling, a model for the enhanced Ge diffusion mechanism was proposed. Additionally, a nanofabrication approach utilizing this enhanced Ge diffusion mechanism was shown to be applicable to arbitrary 3D shapes, leading to the fabrication of stacked silicon quantum dots embedded in SiGe nanopillars. A new wet etch-based method for preparing 3D nanostructures for highresolution imaging free of obscuring material or damage was also developed. These results enable a new method for the controlled and scalable fabrication of on-chip silicon nanostructures with sub-10 nm dimensions needed for next generation microelectronics, including low energy electronics, quantum computing, sensors, and integrated photonics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Magnetic Imaging with Spin Defects in Hexagonal Boron Nitride

Optically active spin defects hosted in hexagonal boron nitride (ℎ-BN) are promising candidates for the development of a two-dimensional (2D) quantum sensing unit. Here, we demonstrate quantitative magnetic imaging with ℎ-BN flakes doped with negatively charged boron-vacancy ($V^{-}_{B}$) centers through neutron irradiation. As a proof-of-concept, we image the magnetic field produced by Cr⁢Te 2 , a van der Waals ferromagnet with a Curie temperature slightly above 300 K. Compared to other quantum sensors embedded in 3D materials, the advantages of the ℎ-BN-based magnetic sensor described in this work are its ease of use, high flexibility, and, more importantly, its ability to be placed in close proximity to a target sample. Further, such a sensing unit will likely find numerous applications in 2D materials research by offering a simple way to probe the physics of van der Waals heterostructures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Insights into the emergence of mass from studies of pion and kaon structure

There are two mass generating mechanisms in the standard model of particle physics (SM). One is related to the Higgs boson and fairly well understood. The other is embedded in quantum chromodynamics (QCD), the SM’s strong interaction piece; and although responsible for emergence of the roughly 1 GeV mass scale that characterises the proton and hence all observable matter, the source and impacts of this emergent hadronic mass (EHM) remain puzzling. As bound states seeded by a valence-quark and -antiquark, pseudoscalar mesons present a simpler problem in quantum field theory than that associated with the nucleon. Consequently, there is a large array of robust predictions for pion and kaon properties whose empirical validation will provide a clear window onto many effects of both mass generating mechanisms and the constructive interference between them. This has now become significant because new-era experimental facilities, in operation, construction, or planning, are capable of conducting such tests and thereby contributing greatly to resolving the puzzles of EHM. These aspects of experiment, phenomenology, and theory, along with contemporary successes and challenges, are reviewed herein. In addition to providing an overview of the experimental status, we focus on recent progress made using continuum Schwinger function methods and lattice-regularised QCD. Further, advances made using other theoretical tools are also sketched. Our primary goal is to highlight the potential gains that can accrue from a coherent effort aimed at finally reaching an understanding of the character and structure of Nature’s Nambu–Goldstone modes.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

The Diffusion Mechanism of Ge During Oxidation of Si/SiGe Nanofins

A recently discovered, enhanced Ge diffusion mechanism along the oxidizing interface of Si/SiGe nanostructures has enabled the formation of single-crystal Si nanowires and quantum dots embedded in a defect-free, single-crystal SiGe matrix. Here, we report oxidation studies of Si/SiGe nanofins aimed at gaining a better understanding of this novel diffusion mechanism. Here, a superlattice of alternating Si/Si 0.7 Ge 0.3 layers was grown and patterned into fins. After oxidation of the fins, the rate of Ge diffusion down the Si/SiO 2 interface was measured through the analysis of HAADF-STEM images. The activation energy for the diffusion of Ge down the sidewall was found to be 1.1 eV, which is less than one-quarter of the activation energy previously reported for Ge diffusion in bulk Si. Through a combination of experiments and DFT calculations, we propose that the redistribution of Ge occurs by diffusion along the Si/SiO 2 interface followed by a reintroduction into substitutional positions in the crystalline Si.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Optical recognition of constructs using hyperspectral imaging and detection (ORCHID)

Abstract Challenges to deep sample imaging have necessitated the development of special techniques such as spatially offset optical spectroscopy to collect signals that have travelled through several layers of tissue. However, these techniques provide only spectral information in one dimension (i.e., depth). Here, we describe a general and practical method, referred to as Optical Recognition of Constructs Using Hyperspectral Imaging and Detection (ORCHID). The sensing strategy integrates (1) the spatial offset detection concept by computationally binning 2D optical data associated with digital offsets based on selected radial pixel distances from the excitation source; (2) hyperspectral imaging using tunable filter; and (3) digital image binding and collation. ORCHID is a versatile modality that is designed to collect optical signals deep inside samples across three spatial (X, Y, Z) as well as spectral dimensions. The ORCHID method is applicable to various optical techniques that exhibit narrow-band structures, from Raman scattering to quantum dot luminescence. Samples containing surface-enhanced Raman scattering (SERS)-active gold nanostar probes and quantum dots embedded in gel were used to show a proof of principle for the ORCHID concept. The resulting hyperspectral data cube is shown to spatially locate target emitting nanoparticle volumes and provide spectral information for in-depth 3D imaging.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

High conductivity coherently strained quantum well XHEMT heterostructures on AlN substrates with delta doping

Polarization-induced two-dimensional electron gases (2DEGs) in AlN/GaN/AlN quantum well high-electron-mobility transistors on ultrawide bandgap AlN substrates offer a promising route to advance microwave and power electronics with nitride semiconductors. The electron mobility in thin GaN quantum wells embedded in AlN is limited by high internal electric field and the presence of undesired polarization-induced two-dimensional hole gases (2DHGs). To enhance the electron mobility in such heterostructures on AlN, previous efforts have resorted to thick, relaxed GaN channels with dislocations. In this work, we introduce n-type compensation δ-doping in a coherently strained single-crystal (Xtal) AlN/GaN/AlN heterostructure to counter the 2DHG formation at the GaN/AlN interface, and simultaneously lower the internal electric field in the well. This approach yields a δ-doped XHEMT structure with a high 2DEG density of ∼3.2×1013 cm−2 and a room temperature (RT) mobility of ∼855 cm2/Vs, resulting in the lowest RT sheet resistance 226.7 Ω/□ reported to date in coherently strained AlN/GaN/AlN HEMT heterostructures on the AlN platform.

Physics↗
DOE OSTI2024

Phonon Screening of Excitons in Atomically Thin Semiconductors

Atomically thin semiconductors, encompassing both 2D materials and quantum wells, exhibit a pronounced enhancement of excitonic effects due to geometric confinement. Consequently, these materials have become foundational platforms for the exploration and utilization of excitons. Recent ab initio studies have demonstrated that phonons can substantially screen electron-hole interactions in bulk semiconductors and strongly modify the properties of excitons. While excitonic properties of atomically thin semiconductors have been the subject of extensive theoretical investigations, the role of phonon screening on excitons in atomically thin structures remains unexplored. In this Letter, we demonstrate via ab initio GW-Bethe-Salpeter equation calculations that phonon screening can have a significant impact on optical excitations in atomically thin semiconductors. We further show that the degree of phonon screening can be tuned by structural engineering. We focus on atomically thin GaN quantum wells embedded in AlN and identify specific phonons in the surrounding material, AlN, that dramatically alter the lowest-lying exciton in monolayer GaN via screening. Our studies provide new intuition beyond standard models into the interplay among structural properties, phonon characteristics, and exciton properties in atomically thin semiconductors, and have implications for future experiments.

2-dimensional systems↗
DOE OSTI2022

Photonic Luminescent Solar Concentrator Design for High Efficiency, Low Cost Multijunction Photovoltaics

Despite the extraordinary advances in solar cell efficiency in laboratory settings, the deployment of solar cells continues to be limited to low efficiency (<25%) silicon cells because of cost. In this work, we take advantage of the extraordinary optical properties afforded by nanophotonic structures to create a photonic luminescent solar concentrator for an InGaP-Si multijunction concentrator cell. Finite difference time domain (FDTD) simulations demonstrated a concentrator that could effectively capture, downconvert, and guide concentrated light to an InGaP subcell while still transmitting longer wavelengths to a Si subcell. We fabricated the photonic luminescent solar concentrator, which was comprised of CdSe/CdS quantum dots embedded within alternating layers of Si 3 N 4 and SiO 2 , and experimentally verified the optical performance, showing a 40% increase in light guiding and a significant reduction in reabsorption losses in the plane of the luminescent concentrator as compared to traditional designs. Finally, we utilized modified detailed balance calculations that accounted for cell and optical losses and showed >30% efficiencies are possible with this design, demonstrating the potential to meet the demands for high efficiency, inexpensive solar modules.

Eisler, Carissa N.↗
DOE OSTI2022

Room-Temperature Quantitative Quantum Sensing of Lithium Ions with a Radical-Embedded Metal–Organic Framework

Recent advancements in quantum sensing have sparked transformative detection technologies with high sensitivity, precision, and spatial resolution. Owing to their atomic-level tunability, molecular qubits and ensembles thereof are promising candidates for sensing chemical analytes. Here, in this study, we show quantum sensing of lithium ions in solution at room temperature with an ensemble of organic radicals integrated in a microporous metal–organic framework (MOF). The organic radicals exhibit electron spin coherence and microwave addressability at room temperature, thus behaving as qubits. The high surface area of the MOF promotes accessibility of the guest analytes to the organic qubits, enabling unambiguous identification of lithium ions and quantitative measurement of their concentration through relaxometric and hyperfine spectroscopic methods based on electron paramagnetic resonance (EPR) spectroscopy. The sensing principle presented in this work is applicable to other metal ions with nonzero nuclear spin.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Quantum computing approach for building surface sunlit in urban-scale energy modeling

Solar shadow calculations are needed in building energy modeling and performance simulation of PV systems installed on roofs or facades of buildings. We present a quantum computing approach for calculation of building surface sunlit fractions by recasting solar visibility as a binary optimization problem solved by quantum annealing. Each triangulated surface centroid is encoded as a binary qubit indicating sunlit or shaded status. Geometric visibility constraints are derived from the Möller-Trumbore intersection algorithm and converted into a constrained quadratic binary model compatible with contemporary quantum annealers. The coefficients were embedded to D-Wave quantum computer. To demonstrate feasibility, we conducted a case study in San Francisco for a target building with 52 triangles and roughly 2700 nearby triangles within 50 m evaluated at representative winter and summer solar positions. The results demonstrated that quantum annealing can reliably calculate and distinguish sunlit from shaded surfaces. Quantum samples achieved average accuracy exceeding 92.4 %, with the aggregate surface-level agreement approaching 99.9 %. The outputs of quantum computers agreed closely with classical algorithms, indicating practical feasibility and promising scalability. Finally, the hourly sunlit fractions of building surfaces can be obtained for urban energy modelling. This is the first study to apply quantum computing to the solar shadow and building surface sunlit calculation. It introduces a new paradigm that differs fundamentally from traditional approaches.

Deng, Zhipeng↗
DOE OSTI2020

Decomposition Algorithms for Solving NP-hard Problems on a Quantum Annealer

NP-hard problems such as the maximum clique or minimum vertex cover problems, two of Karp’s 21 NP-hard problems, have several applications in computational chemistry, biochemistry and computer network security. Adiabatic quantum annealers can search for the optimum value of such NP-hard optimization problems, given the problem can be embedded on their hardware. However, this is often not possible due to certain limitations of the hardware connectivity structure of the annealer. This paper studies a general framework for a decomposition algorithm for NP-hard graph problems aiming to identify an optimal set of vertices. Our generic algorithm allows us to recursively divide an instance until the generated subproblems can be embedded on the quantum annealer hardware and subsequently solved. Furthermore, the framework is applied to the maximum clique and minimum vertex cover problems, and we propose several pruning and reduction techniques to speed up the recursive decomposition. The performance of both algorithms is assessed in a detailed simulation study.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

Photonic Crystal Waveguides for >90% Light Trapping Efficiency in Luminescent Solar Concentrators

Luminescent solar concentrators are currently limited in their potential concentration factor and solar conversion efficiency by the inherent escape cone losses present in conventional planar dielectric waveguides. Here, we demonstrate that photonic crystal slab waveguides tailored for luminescent solar concentrator applications can exhibit >90% light trapping efficiency. This is achieved by use of quantum dot luminophores embedded within the waveguide that absorb light at photon energies corresponding to photonic crystal leaky modes that couple to incoming sunlight. The luminophores then emit at lower photon energies into photonic crystal bound modes that enable highly efficient light trapping in slab waveguides of wavelength-scale thickness. Photonic crystal waveguides thus nearly eliminate escape cone losses, and overcome the performance limitations of previously proposed wavelength-selective dielectric multilayer filters. We describe designs for hole-array and rod-array photonic crystals comprised of hydrogenated amorphous silicon carbide using CdSe/CdS quantum dots. Our analysis suggests that photonic crystal waveguide luminescent solar concentrators using these materials these can achieve light trapping efficiency above 92% and a concentration factor as high as 100.

36 MATERIALS SCIENCE↗