Light-induced offset charge tracking in Si/SiGe quantum devices
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Coe, Brighton↗
SEARCH · Engineering Papers
Results for “quantum devices”
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Single- and few-shot protocols for quantum device calibration and drift mitigation
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Magann, Alicia Bette↗
Towards real-time quantum device calibration and drift mitigation
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Magann, Alicia Bette [Sandia National Laboratories↗
Mocha: Multiscale semiconductor quantum device modeling and characterization, QCPR 2025
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Jacobson, Noah Tobias [Sandia National Laboratorie↗
Comparison of numerical quantum device models
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transport resonant tunneling theory↗
Efficient self-consistent quantum transport simulator for quantum devices.
Abstract not provided.
Gao, Xujiao↗
Gate-set tomography: calibration-free full characterization of quantum devices using error-amplifying circuits.
Abstract not provided.
Blume-Kohout, Robin J↗
Deterministic Fabrication of Diamond Color Centers for Engineered Quantum Devices.
Abstract not provided.
Abraham, John Bishoy Sam↗
Atomic-precision fabrication and metrology for epitaxial Si quantum devices.
Abstract not provided.
Koepke, Justin↗
The Quantum Computer Aided Design (QCAD) Framework for Quantum Device Modeling.
Abstract not provided.
Muller, Richard P.↗
Single Atom Implantation for Quantum Devices and Materials.
Abstract not provided.
Bielejec, Edward S.↗
Modeling the electronic structure and dynamics of semiconductor quantum devices.
Abstract not provided.
Baczewski, Andrew David↗
Modeling the Electronic Structure of Phosphorus Donor Clusters in Quantum Devices.
Abstract not provided.
Campbell, Quinn↗
Engineering and control of advanced optoelectronic materials for applications in quantum devices.
Abstract not provided.
Foster, Natalie↗
Comparison of Nb and Ta Pentoxide Loss Tangents for Superconducting Quantum Devices
Superconducting transmon qubits are commonly made with thin-film Nb wiring, but recent studies have shown increased performance with Ta wiring. In this work, we compare the resonator-induced single photon, millikelvin dielectric loss for pentoxides of Nb (Nb2O5) and Ta (Ta2O5) in order to further understand limiting losses in qubits. Nb and Ta pentoxides of three thicknesses are deposited via pulsed laser deposition onto identical coplanar waveguide resonators. The two-level system (TLS) loss in Nb2O5 is determined to be about 30% higher than that of Ta2O5. This work indicates that qubits with Nb wiring are affected by higher loss arising from the native pentoxide itself, likely in addition to the presence of suboxides, which are largely absent in Ta.
Goronzy, D. P. [Northwestern U.]↗