Quantum computing: the final frontier?
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nanotechnology quantum computing Turing machine ci↗
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Quantum computing - the final frontier
Explore the source record for details and available documents.
nanotechnology quantum computing turing machine ci↗
Quantum Interferometric Optical Lithography: Exploiting Entanglement to Beat the Quantum Limit
Optical masking lithography has been the primary tool of the semiconductor industry for transferring circuit images onto substrates to form semiconductor chips.
interferometric optical lithography quantum parame↗
Hybrid VLSI/QCA Architecture for Computing FFTs
A data-processor architecture that would incorporate elements of both conventional very-large-scale integrated (VLSI) circuitry and quantum-dot cellular automata (QCA) has been proposed to enable the highly parallel and systolic computation of fast Fourier transforms (FFTs). The proposed circuit would complement the QCA-based circuits described in several prior NASA Tech Briefs articles, namely Implementing Permutation Matrices by Use of Quantum Dots (NPO-20801), Vol. 25, No. 10 (October 2001), page 42; Compact Interconnection Networks Based on Quantum Dots (NPO-20855) Vol. 27, No. 1 (January 2003), page 32; and Bit-Serial Adder Based on Quantum Dots (NPO-20869), Vol. 27, No. 1 (January 2003), page 35. The cited prior articles described the limitations of very-large-scale integrated (VLSI) circuitry and the major potential advantage afforded by QCA. To recapitulate: In a VLSI circuit, signal paths that are required not to interact with each other must not cross in the same plane. In contrast, for reasons too complex to describe in the limited space available for this article, suitably designed and operated QCAbased signal paths that are required not to interact with each other can nevertheless be allowed to cross each other in the same plane without adverse effect. In principle, this characteristic could be exploited to design compact, coplanar, simple (relative to VLSI) QCA-based networks to implement complex, advanced interconnection schemes.
Fijany, Amir↗
Development of a Quantum Dot, 0.6 eV InGaAs Thermophotovoltaic (TPV) Converter
Thermophotovoltaic (TPV) power conversion has to date demonstrated conversion efficiencies exceeding 20% when coupled to a heat source. Current III-V semiconductor TPV technology makes use of planar devices with bandgaps tailored to the heat source. The efficiency can be improved further by increasing the collection efficiency through the incorporation of InAs quantum dots. The use of these dots can provide sub-gap absorption and thus improve the cell short circuit current without the normal increase in dark current associated with lowering the bandgap. We have developed self-assembled InAs quantum dots using the Stranski-Krastanov growth mode on 0.74 eV In0.53GaAs lattice-matched to InP and also on lattice-mismatched 0.6 eV In0.69GaAs grown on InP through the use of a compositionally graded InPAsx buffer structure, by metalorganic vapor phase epitaxy (MOVPE). Atomic force microscopy (AFM) measurements showed that the most reproducible dot pattern was obtained with 5 monolayers of InAs grown at 450 C. The lattice mismatch between InAs and In0.69GaAs is only 2.1%, compared to 3.2% between InAs and In0.53GaAs. The smaller mismatch results in lower strain, making dot formation somewhat more complicated, resulting in quantum dashes, rather than well defined quantum dots in the lattice-mismatched case. We have fabricated 0.6 eV InGaAs planer TPV cells with and without the quantum dashes
Forbes, David↗
InGaAsSb/GaSb thermophotovoltaic cells
AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In(1 - x)Ga(x)As(1 -y)Sb(y) alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x, y); and is closely lattice-matched to the GaSb substrate The use of the quaternary alloy, as opposed to a ternary alloy - such as, for example, InGaAs/InP - permits low bandgap devices optimized for 1000 to 1500 C thermal sources with, with at the time, near-exact lattice matching to the GaSb substrate. Lattice-matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. For bandgaps of 0.52 eV,Fo internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/sq cm is 0.220 volts and 0.260 V for current densities of 2 A/sq cm. Fill factors of 56% have also been measured. These preliminary results lead to the conclusion that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1000 to 1500 C source temperatures.
Mauk, M. G.↗
InGaAsSb/GaSb thermophotovoltaic cells
AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a tvo-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate The (direct) bandgap of the In(1-x)Ga(x)As(1-y)Sb(y) alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy as opposed to a ternary alloy -- such as, for example, InGaAs/InP -- permits low bandgap devices optimized for 1000 to 1500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice-matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm(exp 2) is 0.220 volts and 0.260 V for current densities of 2 A/cm(exp 2). Fill factors of 56% have been measured at 60 mA/cm(exp 2). However as current density increases there is some decrease in fill factor. Our results to date snow that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1000 to 1500 C source temperatures.
Shellenbarger, Z. A.↗
Tunable, Highly Stable Lasers for Coherent Lidar
Practical space-based coherent laser radar systems envisioned for global winds measurement must be very efficient and must contend with unique problems associated with the large platform velocities that the instruments experience in orbit. To compensate for these large platform-induced Doppler shifts in space-based applications, agile-frequency offset-locking of two single-frequency Doppler reference lasers was thoroughly investigated. Such techniques involve actively locking a frequency-agile master oscillator (MO) source to a comparatively static local oscillator (LO) laser, and effectively producing an offset between MO (the lidar slave oscillator seed source, typically) and heterodyne signal receiver LO that lowers the bandwidth of the receiver data-collection system and permits use of very high-quantum-efficiency, reasonably- low-bandwidth heterodyne photoreceiver detectors and circuits. Recent work on MO/LO offset locking has focused on increasing the offset locking range, improving the graded-InGaAs photoreceiver performance, and advancing the maturity of the offset locking electronics. A figure provides a schematic diagram of the offset-locking system.
Henderson, Sammy W.↗
Coherent Detection of High-Rate Optical PPM Signals
A method of coherent detection of high-rate pulse-position modulation (PPM) on a received laser beam has been conceived as a means of reducing the deleterious effects of noise and atmospheric turbulence in free-space optical communication using focal-plane detector array technologies. In comparison with a receiver based on direct detection of the intensity modulation of a PPM signal, a receiver based on the present method of coherent detection performs well at much higher background levels. In principle, the coherent-detection receiver can exhibit quantum-limited performance despite atmospheric turbulence. The key components of such a receiver include standard receiver optics, a laser that serves as a local oscillator, a focal-plane array of photodetectors, and a signal-processing and data-acquisition assembly needed to sample the focal-plane fields and reconstruct the pulsed signal prior to detection. The received PPM-modulated laser beam and the local-oscillator beam are focused onto the photodetector array, where they are mixed in the detection process. The two lasers are of the same or nearly the same frequency. If the two lasers are of different frequencies, then the coherent detection process is characterized as heterodyne and, using traditional heterodyne-detection terminology, the difference between the two laser frequencies is denoted the intermediate frequency (IF). If the two laser beams are of the same frequency and remain aligned in phase, then the coherent detection process is characterized as homodyne (essentially, heterodyne detection at zero IF). As a result of the inherent squaring operation of each photodetector, the output current includes an IF component that contains the signal modulation. The amplitude of the IF component is proportional to the product of the local-oscillator signal amplitude and the PPM signal amplitude. Hence, by using a sufficiently strong local-oscillator signal, one can make the PPM-modulated IF signal strong enough to overcome thermal noise in the receiver circuits: this is what makes it possible to achieve near-quantum-limited detection in the presence of strong background. Following quantum-limited coherent detection, the outputs of the individual photodetectors are automatically aligned in phase by use of one or more adaptive array compensation algorithms [e.g., the least-mean-square (LMS) algorithm]. Then the outputs are combined and the resulting signal is processed to extract the high-rate information, as though the PPM signal were received by a single photodetector. In a continuing series of experiments to test this method (see Fig. 1), the local oscillator has a wavelength of 1,064 nm, and another laser is used as a signal transmitter at a slightly different wavelength to establish an IF of about 6 MHz. There are 16 photodetectors in a 4 4 focal-plane array; the detector outputs are digitized at a sampling rate of 25 MHz, and the signals in digital form are combined by use of the LMS algorithm. Convergence of the adaptive combining algorithm in the presence of simulated atmospheric turbulence for optical PPM signals has already been demonstrated in the laboratory; the combined output is shown in Fig. 2(a), and Fig. 2(b) shows the behavior of the phase of the combining weights as a function of time (or samples). We observe that the phase of the weights has a sawtooth shape due to the continuously changing phase in the down-converted output, which is not exactly at zero frequency. Detailed performance analysis of this coherent free-space optical communication system in the presence of simulated atmospheric turbulence is currently under way.
Vilnrotter, Victor↗
Super Photon Counters
The perfect photon detector would measure the arrival time, the energy, the polarization, and the position of every arriving quantum, but that is easier said than done. Two groups have now succeeded in doing time-resolved spectroscopy on the Crab Nebula pulsar, measuring everything but the polarization, with reports from Romani et al. at Stanford and from Perryman et al. at ESTEC. Both groups use superconducting detectors to gain the necessary speed and sensitivity. The photon can heat the electrons in a superconductor biased in the middle of its resistive transition, or break bound superconducting electron-hole pairs, which can then be collected. Three years ago, Peacock et al. reported that they had detected single optical photons with a superconducting tunnel junction (STJ), and Paresce wrote a News and Views article. A tunnel junction uses two pieces of conductive material, separated by a tiny gap of insulating material or even vacuum. If the gap is thin enough, electrons can tunnel across anyway, and if the conductors are superconductors, the junction displays very useful quantum mechanical properties and electrical nonlinearities. Amplifiers, detectors, oscillators, and computer circuits can all be made from them. Their special advantage is that they operate at very low temperatures, dissipate very little power, operate very fast, and are very small.
Mather, John↗
Crystal growth of device quality GaAs in space
GaAs device technology has recently reached a new phase of rapid advancement, made possible by the improvement of the quality of GaAs bulk crystals. At the same time, the transition to the next generation of GaAs integrated circuits and optoelectronic systems for commercial and government applications hinges on new quantum steps in three interrelated areas: crystal growth, device processing and device-related properties and phenomena. Special emphasis is placed on the establishment of quantitative relationships among crystal growth parameters-material properties-electronic properties and device applications. The overall program combines studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and investigation of electronic properties and phenomena controlling device applications and device performance.
Gatos, H. C.↗
Improved charge injection device and a focal plane interface electronics board for stellar tracking
An improved Charge Injection Device (CID) stellar tracking sensor and an operating sensor in a control/readout electronics board were developed. The sensor consists of a shift register scanned, 256x256 CID array organized for readout of 4x4 subarrays. The 4x4 subarrays can be positioned anywhere within the 256x256 array with a 2 pixel resolution. This allows continuous tracking of a number of stars simultaneously since nine pixels (3x3) centered on any star can always be read out. Organization and operation of this sensor and the improvements in design and semiconductor processing are described. A hermetic package incorporating an internal thermoelectric cooler assembled using low temperature solders was developed. The electronics board, which contains the sensor drivers, amplifiers, sample hold circuits, multiplexer, analog to digital converter, and the sensor temperature control circuits, is also described. Packaged sensors were evaluated for readout efficiency, spectral quantum efficiency, temporal noise, fixed pattern noise, and dark current. Eight sensors along with two tracker electronics boards were completed, evaluated, and delivered.
Michon, G. J.↗
Microwave characteristics of GaAs MMIC integratable optical detectors
Interdigitated photoconductive detectors were fabricated on microwave device structures, making them easily integratable with Monolithic Microwave Integrated Circuits (MMIC). Detector responsivity as high as 2.5 A/W and an external quantum efficiency of 3.81 were measured. Response speed was nearly independent of electrode geometry, and all detectors had usable response at frequencies to 6 GHz. A small signal model of the detectors based on microwave measurements was also developed.
Claspy, Paul C.↗
Bio-Nanobattery Development and Characterization
A bio-nanobattery is an electrical energy storage device that utilizes organic materials and processes on an atomic, or nanometer-scale. The bio-nanobattery under development at NASA s Langley Research Center provides new capabilities for electrical power generation, storage, and distribution as compared to conventional power storage systems. Most currently available electronic systems and devices rely on a single, centralized power source to supply electrical power to a specified location in the circuit. As electronic devices and associated components continue to shrink in size towards the nanometer-scale, a single centralized power source becomes impractical. Small systems, such as these, will require distributed power elements to reduce Joule heating, to minimize wiring quantities, and to allow autonomous operation of the various functions performed by the circuit. Our research involves the development and characterization of a bio-nanobattery using ferritins reconstituted with both an iron core (Fe-ferritin) and a cobalt core (Co-ferritin). Synthesis and characterization of the Co-ferritin and Fe-ferritin electrodes were performed, including reducing capability and the half-cell electrical potentials. Electrical output of nearly 0.5 V for the battery cell was measured. Ferritin utilizing other metallic cores were also considered to increase the overall electrical output. Two dimensional ferritin arrays were produced on various substrates to demonstrate the feasibility of a thin-film nano-scaled power storage system for distributed power storage applications. The bio-nanobattery will be ideal for nanometerscaled electronic applications, due to the small size, high energy density, and flexible thin-film structure. A five-cell demonstration article was produced for concept verification and bio-nanobattery characterization. Challenges to be addressed include the development of a multi-layered thin-film, increasing the energy density, dry-cell bionanobattery development, and selection of ferritin core materials to allow the broadest range of applications. The potential applications for the distributed power system include autonomously-operating intelligent chips, flexible thin-film electronic circuits, nanoelectromechanical systems (NEMS), ultra-high density data storage devices, nanoelectromagnetics, quantum electronic devices, biochips, nanorobots for medical applications and mechanical nano-fabrication, etc.
King, Glen C.↗
Compact Interconnection Networks Based on Quantum Dots
Architectures that would exploit the distinct characteristics of quantum-dot cellular automata (QCA) have been proposed for digital communication networks that connect advanced digital computing circuits. In comparison with networks of wires in conventional very-large-scale integrated (VLSI) circuitry, the networks according to the proposed architectures would be more compact. The proposed architectures would make it possible to implement complex interconnection schemes that are required for some advanced parallel-computing algorithms and that are difficult (and in many cases impractical) to implement in VLSI circuitry. The difficulty of implementation in VLSI and the major potential advantage afforded by QCA were described previously in Implementing Permutation Matrices by Use of Quantum Dots (NPO-20801), NASA Tech Briefs, Vol. 25, No. 10 (October 2001), page 42. To recapitulate: Wherever two wires in a conventional VLSI circuit cross each other and are required not to be in electrical contact with each other, there must be a layer of electrical insulation between them. This, in turn, makes it necessary to resort to a noncoplanar and possibly a multilayer design, which can be complex, expensive, and even impractical. As a result, much of the cost of designing VLSI circuits is associated with minimization of data routing and assignment of layers to minimize crossing of wires. Heretofore, these considerations have impeded the development of VLSI circuitry to implement complex, advanced interconnection schemes. On the other hand, with suitable design and under suitable operating conditions, QCA-based signal paths can be allowed to cross each other in the same plane without adverse effect. In principle, this characteristic could be exploited to design compact, coplanar, simple (relative to VLSI) QCA-based networks to implement complex, advanced interconnection schemes. The proposed architectures require two advances in QCA-based circuitry beyond basic QCA-based binary-signal wires described in the cited prior article. One of these advances would be the development of QCA-based wires capable of bidirectional transmission of signals. The other advance would be the development of QCA circuits capable of high-impedance state outputs. The high-impedance states would be utilized along with the 0- and 1-state outputs of QCA.
Fijany, Amir↗
Improved Micromachined Transducers
Sensor systems of proposed type incorporate micromachined silicon-based structures as electrostatic force and displacement actuators and micromachined quantum-mechanical-tunneling electrodes as one form of displacement transducers, along with electronic circuits providing multiple electrical stimuli to displacement electrodes for measurement, calibration, monitoring of sensor status, and adjustment. Concept applicable to accelerometers, seismometers, geophones, magnetometers, pressure gauges, and other sensors in which phenomena of interest measured in terms of forces on, and/or displacements of, structural components. Provides completely remote measurement, control, health monitoring, treatment, and like, using telemetry commands.
Hartley, Frank T.↗
Quantum Approximate Optimization with Hard and Soft Constraints
Challenging computational problems arising in the practical world are frequently tackled by heuristic algorithms. Small universal quantum computers will emerge in the next year or two, enabling a substantial broadening of the types of quantum heuristics that can be investigated beyond quantum annealing. The immediate question is What experiments should we prioritize that will give us insight into quantum heuristics? One leading candidate is the quantum approximate optimization algorithm (QAOA) metaheuristic. Here, we provide a framework for designing QAOA circuits for a variety of combinatorial optimization problems with both hard constraints that must be met and soft constraints whose violation we wish to minimize. We work through a number of examples, and discuss design principles and implementation considerations.
Hadfield, Stuart↗
In Situ Irradiation and Measurement of Triple Junction Solar Cells at Low Intensity, Low Temperature (LILT) Conditions
The performance of triple junction InGaP/(In)GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell characterization was carried out in situ at the irradiation temperature while using low intensity illumination, and, as such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements and quantum efficiency measurements. The low temperature irradiations caused substantial degradation that differs in some ways from that seen after room temperature irradiations. The short circuit current degrades more at low temperature while the open circuit voltage degrades more at room temperature. A room temperature anneal after the low temperature irradiation produced a substantial recovery in the degradation. Following irradiation at both temperatures and an extended room temperature anneal, quantum efficiency measurement suggests that the bulk of the remaining damage is in the (In)GaAs sub-cell
Quantum Efficiency↗