Tunneling between a metal and silicon separated by a polymer insulator
Tunneling between metal and silicon separated by thin polymer film insulator
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Results for “polymer semiconductors”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Probing transport energies and defect states in organic semiconductors using energy resolved electrochemical impedance spectroscopy
Abstract Determining the relative energies of transport states in organic semiconductors is critical to understanding the properties of electronic devices and in designing device stacks. Futhermore, defect states are also highly important and can greatly impact material properties and device performance. Recently, energy‐resolved electrochemical impedance spectroscopy (ER‐EIS) is developed to probe both the ionization energy (IE) and electron affinity (EA) as well as sub‐bandgap defect states in organic semiconductors. Herein, ER‐EIS is compared to cyclic voltammetry (CV) and photoemission spectroscopies for extracting IE and EA values, and to photothermal deflection spectroscopy (PDS) for probing defect states in both polymer and molecular organic semiconductors. The results show that ER‐EIS determined IE and EA are in better agreement with photoemission spectroscopy measurements as compared to CV for both polymer and molecular materials. Furthermore, the defect states detected by ER‐EIS agree with sub‐bandgap features detected by PDS. Surprisingly, ER‐EIS measurements of regiorandom and regioregular poly(3‐hexylthiophene) (P3HT) show clear defect bands that occur at significantly different energies. In regioregular P3HT the defect band is near the edge of the occupied states while it is near the edge of the unoccupied states in regiorandom P3HT.
14 SOLAR ENERGY↗
Polymer-Assisted Polymorph Transition in Melt-Processed Molecular Semiconductor Crystals
Not Available
36 MATERIALS SCIENCE↗
Material Needs and Measurement Challenges for Advanced Semiconductor Packaging: Understanding the Soft Side of Science
This Perspective builds upon insights from the National Institute of Standards and Technology (NIST)-organized workshop, “Materials and Metrology Needs for Advanced Semiconductor Packaging Strategies,” held at the 35th annual Electronics Packaging Symposium in Binghamton, NY, on September 5, 2024. It outlines critical challenges and opportunities related to polymer-based “soft” materials in advanced semiconductor packaging, with emphasis on polymer science, measurement science (metrology), and the strategic development of Research-Grade Test Materials (RGTMs). These efforts, led by the NIST CHIPS team, aim to advance the fundamental understanding of structure-property-processing relationships, promote standardized guidelines and innovative methods for material characterization, and accelerate the development, qualification, and adoption of next-generation packaging materials. The Perspective also distills key insights from the panel discussion with industry experts, emphasizing the need for close collaboration among materials scientists, process engineers, and metrology experts to enable a holistic strategy, further highlighting the importance of cross-sector partnerships among industry, academia, and government to address pressing challenges in packaging materials and processes.
97 MATHEMATICS AND COMPUTING↗
Precise Control of Phase Separation Enables 12% Efficiency in All Small Molecule Solar Cells
Abstract Compared to conjugated polymers, small‐molecule organic semiconductors present negligible batch‐to‐batch variations, but presently provide comparatively low power conversion efficiencies (PCEs) in small‐molecular organic solar cells (SM‐OSCs), mainly due to suboptimal nanomorphology. Achieving precise control of the nanomorphology remains challenging. Here, two new small‐molecular donors H13 and H14 , created by fluorine and chlorine substitution of the original donor molecule H11 , are presented that exhibit a similar or higher degree of crystallinity/aggregation and improved open‐circuit voltage with IDIC‐4F as acceptor. Due to kinetic and thermodynamic reasons, H13 ‐based blend films possess relatively unfavorable molecular packing and morphology. In contrast, annealed H14 ‐based blends exhibit favorable characteristics, i.e., the highest degree of aggregation with the smallest paracrystalline π–π distortions and a nanomorphology with relatively pure domains, all of which enable generating and collecting charges more efficiently. As a result, blends with H13 give a similar PCE (10.3%) as those made with H11 (10.4%), while annealed H14 ‐based SM‐OSCs have a significantly higher PCE (12.1%). Presently this represents the highest efficiency for SM‐OSCs using IDIC‐4F as acceptor. The results demonstrate that precise control of phase separation can be achieved by fine‐tuning the molecular structure and film formation conditions, improving PCE and providing guidance for morphology design.
Bin, Haijun↗
Amplitude-mode spectroscopy of chemically injected and photogenerated charge carriers in semiconducting single-walled carbon nanotubes
In one-dimensional semiconductors such as conjugated polymers and semiconducting single-walled carbon nanotubes (s-SWCNTs), injected charge carriers (electrons or holes) can have profound impacts on both electronic conductivity and optical spectra, even at low carrier densities. Understanding charge-related spectral features is a key fundamental challenge with important technological implications. Here, we employ a systematic suite of experimental and theoretical tools to understand the mid-infrared charge signatures of heavily p-type doped polymer-wrapped s-SWCNTs. Across a broad range of nanotube diameters, we find that hole charge carriers induce strong Fano anti-resonances in mid-infrared transmission spectra that correspond to defect-related (D-band) and in-plane tangential (G-band) Raman-active vibrational modes, along with anti-resonances arising from infrared (IR)-active polymer and SWCNT modes. We employ 13C isotope-labeled s-SWCNTs and a removable wrapping polymer to clarify the relative intensities, energies, and sources of all observed anti-resonances. Simulations performed with the "amplitude mode model" are used to quantitatively reproduce Raman spectra and also help to explain the outsized intensity of the D-band anti-resonance, relative to the G-band, observed for both moderately and degenerately doped s-SWCNTs. Here, the results provide a framework for future studies of ground- and excited-state charge carriers in s-SWCNTs and a variety of low-dimensional materials.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Research on digital transducer principles, volume 2 Annual report, 1 Jan. - 30 Jun. 1967
Thin film transport in polymer dielectrics, fabrication of semiconductor devices having digital or discontinuous responses, and chemical vapor deposition of exotic dielectric films
Hartwig, W. H.↗
Branched Oligo(ether) Side Chains: A Path to Enhanced Processability and Elevated Conductivity for Polymeric Semiconductors
Explore the source record for details and available documents.
99 GENERAL AND MISCELLANEOUS↗
Microgravity materials processing for commercial applications
An evaluation is made of the development status of materials processing techniques in microgravity environments; the classes of materials treated to date encompass glasses, ceramics, crystals, semiconductors, metals and their alloys, polymers, composites, and such biological substances as pharmaceuticals. Attention is given to the commercial development of composite and mixed-phase materials with substantially improved properties as a result of microgravity processing, as well as to current research into catalysts and Type II-VI semiconductor crystals such as CdTe.
Kohli, R.↗
Materials for Chiral Light Control
Solution-processable semiconductors based on small molecules, polymers or halide perovskites combine sustainable manufacturing with exceptional optoelectronic properties that can be chemically tailored to achieve flexible and highly efficient optoelectronic and photonic devices. A new exciting research direction is the study of the influence of chirality on light-matter interactions in these soft materials and its exploitation for the simultaneous control of charge, spin and light. In this Viewpoint, researchers working on different types of chiral semiconductors discuss the most interesting directions in this rapidly expanding field.
chiral↗
Design and Synthesis of Annulated Benzothiadiazoles via Dithiolate Formation for Ambipolar Organic Semiconductors
Substituted 2,1,3-benzothiadiazole ( BTD ) is a widely used electron acceptor unit for functional organic semiconductors. Difluorination or annulation on the 5,6-position of the benzene ring is among the most adapted chemical modifications to tune the electronic properties, though each sees its own limitations in regulating the frontier orbital levels. Herein, a hitherto unreported 5,6-annulated BTD acceptor, denoted as ssBTD , is designed and synthesized by incorporating an electron-withdrawing 2-(1,3-dithiol-2-ylidene)malononitrile moiety via aromatic nucleophilic substitution of the 5,6-difluoroBTD ( ffBTD ) precursor. Unlike the other reported BTD annulation strategies, this modification leads to the simultaneous decrease in both frontier orbital energies, a welcoming feature for photovoltaic applications. Incorporation of ssBTD into conjugated polymers results in materials boasting broad light absorption, dramatic solvatochromic and thermochromic responses (>100 nm shift and a band gap difference of ~0.28 eV), and improved crystallinity in the solid state. Such physical properties are in accordance with the combined electron-withdrawing effect and significantly increased polarity associated with the ssBTD unit, as revealed by detailed theoretical studies. Furthermore, the thiolated ssBTD imbues the polymer with ambipolar charge transport property, in contrast to the ffBTD -based polymer, which transports holes only. While the low mobilities (10 -4 to 10 -5 cm 2 V -1 s -1 ) could be further optimized, detailed studies validate that the thioannulated BTD is a versatile electron-accepting unit for the design of functional stimuli-responsive optoelectronic materials.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Recent developments in photoresists for extreme-ultraviolet lithography
Here, this report describes recent developments and current needs in the field of high-resolution photopolymers and photomolecules briefly describing prior generation lithographic patterning materials. It subsequently concentrates on recent advances in both inorganic and polymeric materials for extreme ultraviolet (EUV) lithography. It is also part of a series of papers written in celebration of the centenary of the Polymeric Materials: Science and Engineering (PMSE) division of the American Chemical Society (ACS). PMSE has long been home to polymer chemists who have made important contributions to advances in semiconductor manufacturing as a result of PMSE's focus on polymer coatings research. While EUV lithography has been an area of research for several decades, only within the last 5 years has the combination of new light sources, EUV optics, tool advances and resist discoveries come together to transition this area from the patterning method of the future to a leading-edge manufacturing technology.
36 MATERIALS SCIENCE↗
The Life Cycle Application of Intelligent Software Modeling for the First Materials Science Research Rack
Marshall Space Flight Center (MSFC) has been funding development of intelligent software models to benefit payload ground operations for nearly a decade. Experience gained from simulator development and real-time monitoring and control is being applied to engineering design, testing, and operation of the First Material Science Research Rack (MSRR-1). MSRR-1 is the first rack in a suite of three racks comprising the Materials Science Research Facility (MSRF) which will operate on the International Space Station (ISS). The MSRF will accommodate advanced microgravity investigations in areas such as the fields of solidification of metals and alloys, thermo-physical properties of polymers, crystal growth studies of semiconductor materials, and research in ceramics and glasses. The MSRR-1 is a joint venture between NASA and the European Space Agency (ESA) to study the behavior of different materials during high temperature processing in a low gravity environment. The planned MSRR-1 mission duration is five (5) years on-orbit and the total design life is ten (IO) years. The MSRR-1 launch is scheduled on the third Utilization Flight (UF-3) to ISS, currently in February of 2003). The objective of MSRR-1 is to provide an early capability on the ISS to conduct material science, materials technology, and space product research investigations in microgravity. It will provide a modular, multi-user facility for microgravity research in materials crystal growth and solidification. An intelligent software model of MSRR-1 is under development and will serve multiple purposes to support the engineering analysis, testing, training, and operational phases of the MSRR-1 life cycle development. The G2 real-time expert system software environment developed by Gensym Corporation was selected as the intelligent system shell for this development work based on past experience gained and the effectiveness of the programming environment. Our approach of multi- uses of the simulation model and its intuitive graphics capabilities is providing a concurrent engineering environment for rapid prototyping and development. Operational schematics of the MSRR-1 electrical, thermal control, vacuum access, and gas supply systems, and furnace inserts are represented graphically in the environment. Logic to represent first order engineering calculations is coded into the knowledge base to simulate the operational behavior of the MSRR-1 systems. An example of engineering data provided includes electrical currents, voltages, operational power, temperatures, thermal fluid flow rates. pressures, and component status indications. These type of data are calculated and displayed at appropriate instrumentation points, and the schematics are animated to reflect the simulated operational status of the MSRR-1. The software control functions are also simulated to represent appropriate operational behavior based on automated control and response to commands received by the crew or ground controllers. The first benefit of this simulation environment is being realized in the high fidelity engineering analysis results from the electrical power system G2 model. Secondly, the MSRR-1 simulation model will be embedded with a hardware mock-up of the MSRR-1 to provide crew training on MSRR-1 integrated payload operations. G2 gateway code will output the simulated instrumentation values, termed as telemetry, in a flight-like data stream so that the crew has realistic and accurate simulated MSRR-1 data on the flight displays which will be designed for crew use. The simulation will also respond appropriately to crew or ground initiated commands, which will be part of normal facility operations. A third use of the G2 model is being planned; the MSRR-1 simulation will be integrated with additional software code as part of the test configuration of the primary onboard computer, or Master Controller, for MSRR-1. We will take advantage of the G2 capability to simulate the flight like data stream to test flight software responses and behavior. A fourth use of the G2 model will be to train the Ground Support Personnel that will monitor the MSRR-1 systems and payloads while they are operating aboard the ISS. The intuitive, schematic based environment will provide an excellent foundation for personnel to understand the integrated configuration and operation of the MSRR-1, and the anticipated telemetry feedback based on operational modes of the equipment. Expert monitoring features will be enhanced to provide a smart monitoring environment for the operators. These features include: (1) Animated, intuitive schematic-based displays which reflect telemetry values, (1) Real-time plotting of simulated or incoming sensor values, (3) High/Low exception monitoring for analog data, (4) Expected state monitoring for discrete data, (5) Data trending, (6) Automated malfunction procedure execution to diagnose problems, (7) Look ahead capability to planned MSRR-1 activities in the onboard timeline. And finally, the logic to calculate telemetry values will be deactivated, and the same environment will interface to the incoming data for the real-time telemetry stream to schematically represent the onboard hardware configuration. G2 will be the foundation for the real-time monitoring and control environment. In summary, our MSRR-1 simulation model spans many elements of the life cycle development of this project: Engineering Analysis, Test and Checkout, Training of Crew and Ground Personnel, and Real-time monitoring and control. By utilizing the unique features afforded by an expert system development environment, we have been able to synergize a powerful tool capable of addressing our project needs at every phase of project development.
Rice, Amanda↗
Using block-copolymer nanolithography as a tool to sensitively evaluate variation in chemical dry etching rates of semiconductor materials with sub-5 nm resolution
Ion implantation is a robust and established method to customize the electronic properties of Si. However, fabricating doped, ultrafine semiconductor nanostructures can be challenging. Ion implantation has well-established effects on the dry etch rates of Si, which becomes increasingly consequential as the target dimension shrinks below a few tens of nanometers. While dry etching arrays of block copolymer-templated nanoscale holes (pitch = 37.5 nm, diameter ~25 nm) into p-type, n-type, and undoped Si, we observed that the lateral etch rate was notably larger for the n-type regions than p-type or undoped regions. By doing image analyses on high resolution electron micrographs of the nanostructured hole arrays, we were able to extract the porosity and average radii of the holes with subnanometer sensitivity and compare the relative etch rates between different doping conditions. We found that degenerately doped n-type silicon consistently etches between approximately 17% and 27% faster in the lateral direction than p-type Si, resulting in significantly larger porosity and, consequently, less mechanical stability. Here, we demonstrate that top-down dimensional analysis of a densely packed porous nanostructure is a robust method for assessing extremely small differences in the lateral, chemical etch rate of doped Si to a degree of sensitivity that was previously unachievable. The minute, dense-packed nature of block copolymer self-assembled nanostructures is shown to be ideal for this application. This proposed method could be useful for designing fabrication processes for heterogeneous nanostructures, as slight dry etch rate variations that may be within process tolerance at the micrometer-scale appear to have nontrivial consequences at the nanometer scale.
42 ENGINEERING↗
Anthradithiophene (ADT)-Based Polymerized Non-Fullerene Acceptors for All-Polymer Solar Cells
Realizing efficient all-polymer solar cell (APSC) acceptors typically involves increased building block synthetic complexity, hence potentially unscalable syntheses and/or prohibitive costs. Here we report the synthesis, characterization, and implementation in APSCs of three new polymer acceptors P1–P3 using a scalable donor fragment, bis(2-octyldodecyl)anthra[1,2-b : 5,6-b’]dithiophene-4,10-dicarboxylate (ADT) co-polymerized with the high-efficiency acceptor units, NDI, Y6, and IDIC. Further, all three copolymers have comparable photophysics to known polymers; however, APSCs fabricated by blending P1, P2 and P3 with donor polymers PM5 and PM6 exhibit modest power conversion efficiencies (PCEs), with the champion P2-based APSC achieving PCE=5.64 %. Detailed morphological and microstructural analysis by AFM and GIWAXS reveal a non-optimal APSC active layer morphology, which suppresses charge transport. Despite the modest efficiencies, these APSCs demonstrate the feasibility of using ADT as a scalable and inexpensive electron rich/donor building block for APSCs.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Highly stretchable organic electrochemical transistors with strain-resistant performance
Realizing fully stretchable electronic materials is central to advancing new types of mechanically agile and skin-integrable optoelectronic device technologies. Here we demonstrate a materials design concept combining an organic semiconductor film with a honeycomb porous structure with biaxially prestretched platform that enables high-performance organic electrochemical transistors with a charge transport stability over 30-140% tensional strain, limited only by metal contact fatigue. In this work, the prestretched honeycomb semiconductor channel of donor-acceptor polymer poly(2,5-bis(2-octyldodecyl)-3,6-di(thiophen-2-yl)-2,5-diketo-pyrrolopyrrole-alt-2,5-bis(3-triethyleneglycoloxy-thiophen-2-yl) exhibits high ion uptake and completely stable electrochemical and mechanical properties over 1,500 redox cycles with 10(4) stretching cycles under 30% strain. Invariant electrocardiogram recording cycles and synapse responses under varying strains, along with mechanical finite element analysis, underscore that the present stretchable organic electrochemical transistor design strategy is suitable for diverse applications requiring stable signal output under deformation with low power dissipation and mechanical robustness. Highly stretchable organic electrochemical transistors with stable charge transport under severe tensional strains are demonstrated using a honeycomb semiconducting polymer morphology, thereby enabling controllable signal output for diverse stretchable bioelectronic applications.
36 MATERIALS SCIENCE↗
Ultrafast infrared plasmon switching in aligned carbon-nanotube optical resonators
Reconfigurable plasmonic materials are crucial components in active photonic devices for optical communication, signal processing, and sensing applications. Certain candidates including transparent conducting oxides, small-bandgap semiconductors (i.e. Ge, InSb), and conducting polymers can exhibit switchable free carrier concentrations triggered by optical, electrical or thermal excitations. Here, we show that aligned films of single-walled carbon nanotubes (SWCNTs) can serve as all-optically tunable plasmonic material in the mid-infrared range, thereby adding them to the library of switchable plasmonic materials. Interband optical pumping with femtosecond laser pulses results in the photoexcitation of free charge carriers, which transiently blueshifts the plasmon resonances of patterned, periodic SWCNT nano-resonators spanning the mid-infrared spectral range from 1700 to 2700 cm -1 . Furthermore. the ultrafast plasmon modulation exhibits a nearly single-picosecond decay time, attributed to interband carrier relaxation and inter-tube charge transfer. Given that aligned films of SWCNTs have high thermal stability, excellent photostability, epsilon-near-zero property, and extremely large optical anisotropy, their dynamic tunability represents a promising pathway towards active optical devices in the technologically important mid-infrared range.
single-walled carbon nanotubes↗