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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1965

Effect of Nuclear Radiation on Materials at Cryogenic Temperatures

The tensile properties for 33 polycrystalline structural materials including aluminum, titanium, nickel and iron alloys were obtained at -256.5 C (30 deg R) after irradiation exposure at this temperature to 10(exp 17) nvt (E greater than 0.5 Mev), at -256.5 C without previous irradiation, and at approximately 27 C (540 deg R) without previous irradiation. The data were evaluated statistically to permit identification of cryogenic effects and nuclear-cryogenic effects. A number of conclusions were drawn regarding suitability of certain of the materials for use in nuclear-cryogenic applications and regarding the need for further investigation.

NEUTRON BOMBARDMENT↗
NASA NTRS1985

The mechanism of erosion of metallic materials under cavitation attack

The mean depth of penetration rates (MDPRs) of eight polycrystalline metallic materials, Al 6061-T6, Cu, brass, phosphor bronze, Ni, Fe, Mo, and Ti-5Al-2.5Sn exposed to cavitation attack in a viscous mineral oil with a 20 kHz ultrasonic oscillator vibrating at 50 micron amplitude are reported. The titanium alloy followed by molybdenum have large incubation periods and small MDPRs. The incubation periods correlate linearly with the inverse of hardness and the average MDPRs correlate linearly with the inverse of tensile strength of materials. The linear relationships yield better statistical parameters than geometric and exponential relationships. The surface roughness and the ratio of pit depth to pit width (h/a) increase with the duration of cavitation attack. The ratio h/a varies from 0.1 to 0.8 for different materials. Recent investigations (20) using scanning electron microscopy to study deformation and pit formation features are briefly reviewed. Investigations with single crystals indicate that the geometry of pits and erosion are dependent on their orientation.

Rao, B. C. S.↗
NASA NTRS1980

Silicon Research and Technology Workshop report

The materials, structures, processing, modeling and measurements of high efficiency silicon solar cells were surveyed. In the materials area, highlights included: (1) the possibility of improving cell voltages by reducing minority carrier mobilities in critical regions of the solar cells; (2) the need for and possibility of lowering the surface recombination velocity for improvement of open circuit voltage in shallow junction cells; (3) the present need for improved lifetime in high resistivity cells; and (4) the potential for new materials such as polycrystalline or dendritic web material to perform well at end of life in a radiation environment. In the area of structures, distinction was made between those for terrestrial use and those that would survive radiation environments. Areas such as epitaxial growth and laser or elctron beam annealing (and diffusion) were proposed as having certain advantages over more conventional techniques.

Meulenberg, A., Jr.↗
NASA NTRS1983

Boundary conditions at grain boundaries

Grain boundaries in polycrystalline semiconductor material are frequently idealized as surfaces possessing a characteristic surface recombination velocity. Minority carrier densities generated by external sources (electron beams, light, etc.) in polycrystalline p-n junctions must satisfy certain boundary conditions at these grain boundaries which will be derived. It will also be shown that a 'folding technique' introduced recently to deal with this problem is of limited value.

Von Roos, O.↗
NASA NTRS1986

Requirements for high-efficiency solar cells

Minimum recombination and low injection level are essential for high efficiency. Twenty percent AM1 efficiency requires a dark recombination current density of 2 x 10 to the minus 13th power A/sq cm and a recombination center density of less than 10 to the 10th power /cu cm. Recombination mechanisms at thirteen locations in a conventional single crystalline silicon cell design are reviewed. Three additional recombination locations are described at grain boundaries in polycrystalline cells. Material perfection and fabrication process optimization requirements for high efficiency are outlined. Innovative device designs to reduce recombination in the bulk and interfaces of single crystalline cells and in the grain boundary of polycrystalline cells are reviewed.

Sah, C. T.↗
NASA NTRS2005

High-Temperature Proton-Conducting Ceramics Developed

High-temperature protonic conductors (HTPC) are needed for hydrogen separation, hydrogen sensors, fuel cells, and hydrogen production from fossil fuels. The HTPC materials for hydrogen separation at high temperatures are foreseen to be metal oxides with the perovskite structure A(sup 2+)B(sup 4+)C(sup 2-, sub 3) and with the trivalent cation (M(sup 3+)) substitution at the B(sup 4+)-site to introduce oxygen vacancies. The high affinity for hydrogen ions (H(sup +)) is advantageous for protonic transport, but it increases the reactivity toward water (H2O) and carbon dioxide (CO2), which can lead to premature membrane failure. In addition, there are considerable technological challenges related to the processing of HTPC materials. The high melting point and multi-cation chemistry of HTPC materials creates difficulties in in achieving high-density, single-phase membranes by solid-state sintering. The presence of secondary phases and grain-boundary interfaces are detrimental to the protonic conduction and environmental stability of polycrystalline HTPC materials.

Sayir, Ali↗
NASA NTRS1984

Analysis of the electron-beam-induced current of a polycrystalline p-n junction when the diffusion lengths of the material on either side of a grain boundary differ

The short circuit current generated by the electron beam of a scanning electron microscope in p-n junctions is reduced by enhanced recombination at grain boundaries in polycrystalline material. Frequently, grain boundaries separate the semiconductor into regions possessing different minority carrier life times. This markedly affects the short circuit current I(sc) as a function of scanning distance from the grain boundary. It will be shown theoretically that (1) the minimum of the I(sc) in crossing the grain boundary with the scanning electron beam is shifted away from the grain boundary toward the region with smaller life time (shorter diffusion length), (2) the magnitude of the minimum differs markedly from those calculated under the assumption of equal diffusion lengths on either side of the grain boundary, and (3) the minimum disappears altogether for small surface recombination velocities (s less than 10,000 cm/s). These effects become negligible, however, for large recombination velocities s at grain boundaries. For p-type silicon this happens for s not less than 100,000 cm/s.

Von Roos, O.↗
NASA NTRS1985

Slow plastic strain rate compressive flow in binary CoAl intermetallics

Constant-velocity elevated temperature compression tests have been conducted on a series of binary CoAl intermetallics produced by hot extrusion of blended prealloyed powders. The as-extruded materials were polycrystalline, and they retained their nominal 10-micron grain size after being tested between 1100 and 1400 K at strain rates ranging from 2 x 10 to the -4th to 2 x 10 to the -7th per sec. Significant plastic flow was obtained in all cases; while cracking was observed, much of this could be due to failure at matrix-oxide interfaces along extrusion stringers rather than to solely intergranular fracture. A maximum in flow strength occurs at an aluminum-to-cobalt ratio of 0.975, and the stress exponent appears to be constant for aluminum-to-cobalt ratios of 0.85 or more. It is likely that very aluminum-deficient materials deform by a different mechanism than do other compositions.

Whittenberger, J. D.↗
NASA NTRS1982

Surface diffusion activation energy determination using ion beam microtexturing

The activation energy for impurity atom (adatom) surface diffusion can be determined from the temperature dependence of the spacing of sputter cones. These cones are formed on the surface during sputtering while simultaneously adding impurities. The impurities form clusters by means of surface diffusion, and these clusters in turn initiate cone formation. Values are given for the surface diffusion activation energies for various materials on polycrystalline Cu, Al, Pb, Au, and Ni. The values for different impurity species on each of these substrates are approximately independent of impurity species within the experimental uncertainty, suggesting the absence of strong chemical bonding effects on the diffusion.

Rossnagel, S. M.↗
NASA NTRS1983

Characterization of grain boundaries in silicon

Zero-bias conductance and capacitance measurements at various temperatures were used to study trapped charges and potential barrier height at the boundaries. Deep-level transient spectroscopy (DLTS) was applied to measure the density of states at the boundary. A study of photoconductivity of grain boundaries in p-type silicon demonstrated the applicability of the technique in the measurement of minority carrier recombination velocity at the grain boundary. Enhanced diffusion of phosphorus at grain boundaries in three cast polycrystalline photovoltaic materials was studied. Enhancements for the three were the same, indicating that the properties of boundaries are similar, although grown by different techniques. Grain boundaries capable of enhancing the diffusion were found always to have strong recombination activities; the phenomena could be related to dangling bonds at the boundaries. Evidence that incoherent second-order twins of (111)/(115) type are diffusion-active is presented.

Cheng, L. J.↗
NASA NTRS1982

Enhanced diffusion of phosphorus at grain boundaries

Enhanced diffusion of phosphorus at grain boundaries in cast polycrystalline photovoltaic materials (Wacker, HEM, and Semix) was studied. It was found that the enhancements for the three materials were the same, indicating that the properties of boundaries are similar, even though they were grown by different techniques. In addition, it was observed that grain boundaries capable of enhancing the diffusion always have strong recombination activities. Both phenomena could be related to dangling bonds existing at the boundaries. The present study gives the first evidence that incoherent second order twins of 111/115-plane type are diffusion-active.

Cheng, L. J.↗
NASA NTRS2021

Sputtering of Surfaces by Ion Irradiation: A Comparison of Molecular Dynamics and Binary Collision Approximation Models to Laboratory Measurements

We compare various sputtering simulation methods to experimental results in both the low energy (<1 keV) and high energy (≥1 keV) impact regimes for argon ions impacting a pure copper substrate at normal incidence. Our results indicate that for high energy impacts, both binary collision approximation (BCA) and molecular dynamics methods can be used to generate reasonable predictions for the yield and energy distribution of the sputtered atoms. We also find reasonable agreement between the theoretical and experimental results down to impact energies of 600 eV. However, at 200 eV impact energies, significant discrepancies appear between the experimental and theoretical ejecta energy distributions in the peak position, the width of the energy distribution, and the magnitude of the high energy tail. These discrepancies appear to arise from the experimental results being only for atoms sputtered normal to the substrate surface, whereas the theoretical results are integrated over all 2π solid angles above the surface. Using the BCA code SDTrimSP and limiting the results to only atoms emitted within ±15° of the surface normal brings theory and experiment into reasonable agreement. These results suggest that for low energy impacts, the energy distribution of sputtered atoms is highly dependent on the emission angle of the ejecta.

Solar wind↗