Two-color photoconductive detectors
Two color sandwiched photoconductive mercury-cadmium-telluride far infrared detectors
Reynolds, J. W.↗
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Radiation-induced extrinsic photoconductivity in Li-doped Si.
Investigation of the effects of lithium on radiation-produced complexes having long-time stability by examining the localized energy levels in the forbidden gap which give rise to extrinsic photoconductivity. The levels are found to disappear and in some cases shift with annealing in the 100-450 C temperature range. Due to the complexity of the system and the present lack of adequate theory, no complete analysis of the data obtained could be made.
Fenimore, E.↗
Photoconductivity of high-voltage space insulating materials
The dark and photoconductivities of four high voltage spacecraft insulators, Kapton-H, FEP Teflon, Parylene, and fused quartz, were studied under a variety of conditions intended to simulate a space environment. All measurements were made in a vacuum of less than .00001 torr while the temperature was varied from 22 C to 100 C. Some of the samples used employed conventional deposited metal electrodes--others employed electrodes composed either of an electron beam or a plasma formed by ionization of the residual gas in the test chamber. Test results show: (1) Kapton had unusual conduction properties; it conductivity decreased by more than an order of magnitude when heated at 100 C in a vacuum, but ultimately attained a stable and reproducible value. (2) Both Teflon and fused quartz had high dark resistivities but low photoresistivities when exposed to UV. Optical-density measurements revealed that both materials transmitted UV with little attenuation. (3) Parylene was found to have a low but relatively stable resistivity--comparatively minor changes occurred upon heating or illuminating the sample. Optical-density measurements showed that Parylene was absorbent in the UV and would prevent photoemission from the metal electrode on the back surface.
Coffey, H. T.↗
Ge:Ga and Ge:Be photoconductive detectors for far infrared astronomy from a space platform
The paper describes some of the development work on gallium-doped germanium (Ge:Ga) and beryllium-doped germanium (Ge:Be) photoconductive detectors for use in far-infrared astronomical observations from a space platform such as IRAS. The paper is concerned primarily with detector performance and is divided into two major parts. The first presents the operating principles of this type of detector, while the second presents measured performance data under low-background flux conditions. It is shown that high sensitivity can be obtained from Ge:Ga and Ge:Be detectors under low-background and low-temperature conditions of operation. These detectors are useful for astronomical observations in the far-infrared over the wavelength range 30-120 microns. Major conclusions of the research work done so far are mentioned, including that detectors cut from the same crystal show reasonably good reproducibility of operating characteristics.
Bratt, P. R.↗
Stress induced long wavelength photoconductivity in doped silicon infrared detectors
The long wavelength cutoff of a Si:P detector was extended to 34 microns by the application of a uniaxial stress. An unstressed Si:P photoconductive detector responds to photons of up to 28 microns wavelength. By applying a uniaxial stress to a detector along the /100/ crystal axis, the response was extended to approximately 34 microns. The /100/ axis was chosen as the stress direction because theoretical calculations predicted that such a stress extends the wavelength response more than one along the /110/ axis. These theoretical calculations were based upon fits to experimental data obtained at stresses of up to approximately kbar, and indicated that the extension in wavelength response continues to increase at much larger stresses.
Houck, J. R.↗
Study of photoconductive indium antimonide
Indium antimonide (InSb) material was assessed for use as photoconductive infrared detectors under low background conditions. Such detectors must be more rugged, and have lower capacitance, than the common photovoltaic InSb detector. Electronic grade n-type InSb was etched to 50 micrometers thickness, and tin and gold contacts were applied by evaporation. The test devices showed a relatively low ultimate impedance: 7 Mohms at 4.2 K. This was attributed to the presence of impurity levels of very shallow energies, and this material was judged unsuitable for low background detection.
Low, F. J.↗
Long wavelength photoconductive detectors for airborne and orbital infrared astronomy
Seven gallium doped germanium (Ge:Ga) photoconductive infrared detectors were fabricated and mounted in integrating cavities. In addition, a cold preamplifier package consisting of J230 junction field effect transistors (JFETs) was produced. Tests of the system under low photon background conditions indicated that sensitivity was limited by the Johnson noise of the load resistor. The detectors were mounted in the Ames cooled grating spectrometer, and flown on the Kuiper Airborne Observatory. Good quality astronomical data were obtained during the flight of 7 July 1983.
Houck, J. R.↗
Highly photoconducting O2-doped CdS films deposited by spray pyrolysis
CdS films have been prepared by spraying in air solutions of thiourea with either cadmium chloride or cadmium acetate with varying mole ratio and substrate temperature, and subsequently heat treating in oxygen. Substrates included both bare glass or sapphire and transparent conducting oxide-coated sapphire for electrical measurements lateral and transverse to the CdS plane, respectively. Dark resistances of over 10 to the 14th ohms and light-to-dark conductivities of up to 10 to the 7th were obtained using uncoated substrates. The use of Cd(C2H3O2)2 in place of CdCl2 greatly increased the speed of response although with some sacrifice in photoconductivity. Deposition of CdS on ITO-coated surfaces led to greatly reduced dark resistances for the case of CdCl2, but not Cd(C2H3O2)2, presumably due to HCl reaction with the ITO coating in the course of spraying with the former. Ion microprobe analysis detected indium within the CdS films exhibiting low dark resistance. Measurements of the dark and light conductivities at temperatures down to 77 K are given as are the response times for unetched and HCl-etched surfaces.
Richards, D.↗
Generation-recombination noise in extrinsic photoconductive detectors
A theory of generation-recombination noise is presented and applied to the analysis of the performance limitations of extrinsic photoconductive detectors. The theory takes account both of the photoinduced generation of carriers and of thermal generation that is due to the finite temperature of the detector. Explicit formulas are derived that relate the detector response time, responsivity, and noise equivalent power to the material properties of the photoconductor (such as the presence of compensating impurities) and to the detector's operating conditions, such as its temperature and the presence of background radiation. The detector's performance is shown to degrade at high background levels because of saturation effects.
Brukilacchio, T. J.↗
Studies on organic semiconductors. 15: Effects of the substituents on the photoconductivities of substituted anthracenes
The photocurrents of the substituted anthracenes, 1,5-diacetylanthracene (2), 1-acetylanthracene (3), 9-acetylanthracene (4), 1,5-dichloroanthracene (5), 1,5-diethylanthracene (6), 1,5-dimethoxyanthracene (7), 9-cyanoanthracene (8), and anthracene (1) were measured by using their surface type cells in nitrogen. The compounds of (1), (5), (6), (7), and (8) showed the photocurrent spectra which corresponded to the absorption spectra of their evaporated films. In the cases of (2) and (3), however, the anomalous photocurrent appeared in the threshold region of their absorption spectra. The appearance of the anomalous photocurrent was characteristic of anthracenes having the acetyl group at 1- and/or 5-position. The magnitude of the photocurrents of the 1,5-disubstituted anthracenes was similar to that of (1). The photocurrents of the monosubstituted anthracenes were smaller than that of (1). Among the monosubstituted anthracenes, the compound (4) showed no photocurrent under the same conditions. Contrary to the results obtained in the cases of phenazines, the photoconductivities of the anthracene derivatives became better in air.
Sugimoto, A.↗
Preparations of methoxynitrophenazines and their photoconductivities
Eight methoxynitrophenazines with a methoxy group at the 1 or 2 position and a nitro group at the 6-, 7-, 8- or 9-position of the phenazine ring 1,6, 1,7. 1,8, 1,9, 2,6, 2,7, 2,8 and 2,9 were prepared and their photocurrents were measured by illuminating the surface-type cell with white light from a W lamp under a N atmosphere at room temp. The photocurrents of 1-nitrophenazine 6 and 2-nitrophenazine 7 are compared with those of the methoxynitrophenazines. The photocurrent (i sub p) increases with increasing light intensity (I), thus satisfying log i varies as n log I. The n values are 0.5-1.0. When the nitro group is located at the beta-position of the phenazine ring, the photocurrent becomes larger owing to the electron withdrawing property of the nitro group. On the other hand, the photocurrents of phenazines with the nitro group at the Alpha-position are extremely small. The photoconductivities of methoxynitrophenazines are lower in air.
Sugimoto, A.↗
Polarized photoconductivity and photoinduced absorption measurements in highly stretched trans-polyacetylene films
Photoinduced near infrared absorption, parallel and perpendicular photoconductivity of an highly oriented form of trans-polyacetylene have been studied as a function of the angle between the laser polarization and the fiber axis. The results are discussed on the basis of the phonon-assisted hopping model for the transport of the charge carriers.
Dorsinville, R.↗
Transient photoconductivity in the ferromagnetic semiconductor CdCr2Se4
The transient photoconductive response time of the ferromagnetic semiconductor CdCr2Se4 was measured to be smaller than 90 ps, the response time of the scope. The measurements were performed at room temperature (300 K) for 0.53 and 1.06 microns excitations using a mode locked frequency-doubled YAG laser.
Walser, A. D.↗
Phase and amplitude characteristics of InP:Fe modified interdigitated gap photoconductive microwave switches
The transmission amplitude and phase characteristics of InP:Fe modified interdigitated gap photoconductive microwave switches are reported. Measurements in the 0.1-1 GHz frequency range show that the phase is shifted about 90 deg and that the corresponding change in amplitude ranges from 43 dB at 0.1 GHz to 23 dB at 1 GHz when the illumination-induced conductance is switched from a low OFF-state value (aboit 4 x 10 to the -8 S) to a high ON-state value (5 mS). The observed characteristics can be described by a phase-shifting region and an amplitude modulation region. In the phase-shifting region the phase strongly depends on the conductance, and the amplitude is almost constant. In the amplitude modulation region both the amplitude and the phase depend on the conductance but the effect on the amplitude is much more pronounced. A lumped-element model describing the device performance is presented. It is concluded that these optoelectronic microwave switching devices are suitable for high-speed amplitude modulation but are not promising as high-speed phase shifters.
Andersson, Ingmar L.↗
Microwave response of a HEMT photoconductive detector
Interdigitated photoconductive detectors with 5-micron geometry have been fabricated on HEMT material and their optical response characteristics at 820 nm have been examined at dc and in the frequency range of 2-8 GHz. These have been compared with characteristics of similar 1-micron devices on MESFET material. The shapes of the frequency responses were found to differ, but the useful bandwidth of both types of devices was found to be similar.
Claspy, P. C.↗
Two Carrier Analysis of Persistent Photoconductivity in Modulation-Doped Structures
A simultaneous fit of Hall and conductivity data gives quantitative results on the carrier concentration and mobility in both the quantum well and the parallel conduction channel. In this study this method was applied to reveal several new findings on the effect of persistent photoconductivity (PPC) on free-carrier concentrations and mobilities. The increase in the two-dimensional electron-gas (2DEG) concentration is significantly smaller than the apparent one derived from single carrier analysis of the Hall coefficient. In the two types of structures investigated, delta doped and continuously doped barrier, the apparent concentration almost doubles following illumination, while analysis reveals an increase of about 20% in the 2DEG. The effect of PPC on mobility depends on the structure. For the sample with a continuously doped barrier the mobility in the quantum well more than doubles. This increase is attributed to the effective screening of the ionized donors by the large electron concentration in the barrier. In the delta doped barrier sample the mobility is reduced by almost a factor of 2. This decrease is probably caused by strong coupling between the two wells, as is demonstrated by self-consistent analysis.
Schacham, S. E.↗
Microwave Photoconductance Spectrometer for Thin-Film Deposited Semiconductor Materials
A 10GHz microwave reflectometer was developed to measure the mobility-lifetime product in thin film semiconductors. Development focused on perovskite films (an emerging photovoltaic material) as well as CdTe (an established photovoltaic material).
47 OTHER INSTRUMENTATION↗
Sensitivity Enhancement in Photoconductive Light Field Sampling
Abstract The emerging field of lightwave electronics is driving optoelectronic information processing beyond current classical limitations and has the potential to eventually reach petahertz frequencies. One of the major obstacles in reaching not only higher switching frequencies but also higher repetition rates with low‐power light sources is the efficiency of related devices. A device is presented based on a multilayered material that shows a 13‐fold enhancement in terms of converting light to electric current compared to bulk solids. Furthermore, the device exhibits an almost flat intensity response within its working range. The outstanding properties of engineered multilayered devices promise to push technology for lightwave electronics applications.
47 OTHER INSTRUMENTATION↗