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At least 73 records · Page 4

Demonstration of nitrogen-incorporated ultrananocrystalline diamond photocathodes in a RF gun environment

Quantum efficiency (QE), intrinsic emittance, and robustness are the three most important figures of merit for photocathodes, the first two determine the ultimate achievable brightness of an electron beam, and the third one directly correlates with the complications of a beamline design. Nitrogen-incorporated ultrananocrystalline diamond [(N)UNCD] materials are promising candidates for photocathode applications due to their remarkable electron emission performance as well as the moderate vacuum requirement. Two (N)UNCD photocathodes have been characterized in a realistic RF gun environment with the nicely balanced performance of all three figures of merit. In this work, the QE of the first (N)UNCD cathode (stored in air for two years before the test) was found to be 3.8 x 10 –4 using a 262 nm UV laser and a cathode surface field of 30MV/m. It was found that the QE of the second (N)UNCD sample (grown days before the test) was nearly the same and, therefore, demonstrates the exceptional environmental tolerance of the material. The intrinsic emittance of (N)UNCD was measured to be 1.00 μm/mm.

36 MATERIALS SCIENCE↗

Growth of ultra-flat ultra-thin alkali antimonide photocathode films

Ultra-flat, ultra-thin alkali antimonide photocathodes with high crystallinity can exhibit high quantum efficiency and low mean transverse energy of outgoing electrons, which are essential requirements for a variety of applications for photocathode materials. Here, we investigate the growth of Cs 3 Sb on graphene-coated 4H–SiC (Gr/4H–SiC), 3C–SiC, and Si 3 N 4 substrates. Sb is deposited using pulsed laser deposition, while Cs is deposited thermally and simultaneously. We demonstrate, employing x-ray analysis and quantum efficiency measurements, that this growth method yields atomically smooth Cs 3 Sb photocathodes with a high quantum efficiency (>10%), even in the ultra-thin limit (<30 nm). For the Si 3 N 4 substrate, film growth is shown to be polycrystalline, while films grown on Gr/4H–SiC show a high degree of ordering with signs of epitaxy.

36 MATERIALS SCIENCE↗

Measurement of spin-polarized photoemission from wurtzite and zinc blende gallium nitride photocathodes

Spin-polarized photoemission from wurtzite and zinc blende gallium nitride (GaN) photocathodes has been observed and measured. The p-doped GaN photocathodes were epitaxially grown and activated to negative electron affinity with a cesium monolayer deposited on their surfaces. A field-retarding Mott polarimeter was used to measure the spin polarization of electrons photoemitted from the top of the valence band. A spectral scan with a tunable optical parametric amplifier constructed to provide low-bandwidth light revealed peak spin polarizations of 17% and 29% in the wurtzite and zinc blende photocathodes, respectively. Zinc blende GaN results are analyzed with a spin polarization model accounting for experimental parameters used in the measurements, while possible mechanisms influencing the obtained spin polarization values of wurtzite GaN are discussed.

Physics↗

Photoelectron spectroscopy of CsK2Sb photocathode at Synchrotron Radiation Facility using vacuum transport system

As accelerators and electron microscopes become more advanced, high-performance photocathodes are required. In particular, Cesium potassium antimonide (CsK 2 Sb) photocathode is of interest because of its low emittance, excitability in visible light, and high quantum efficiency (QE). The challenge is its high susceptibility to environment that lead to low operating vacuum pressure and short lifetime/low extraction charge. To resolve these issues, it is necessary to understand the molecular structure of the cathode and its degradation mechanism. In this study, we transported CsK 2 Sb photocathode to a beamline of synchrotron radiation facility using a vacuum transport system for molecular structure analysis. Specifically, the cathode was deposited in an evaporation system at Nagoya University. We transported it to Aichi Synchrotron Radiation Center (Aichi SR) located 15 km away, and analyzed it in the depth direction by X-ray photoelectron spectroscopy (XPS) at BL7U. Based on the results, we quantitatively evaluated the composition ratios and stoichiometry of the cathode elements (Sb, K, Cs). A Cs ex-cess state of surface was observed at the surface, and it is consistent with previous studies. The intended atomic structure of CsK 2 Sb was formed only at a few nanometres of the surface on the Mo substrate. On the other hand, the CsK 2 Sb cathode structure on the graphene substrate was preserved further in the depth direction.

47 OTHER INSTRUMENTATION↗

Emission properties of a hybrid metallized diamond(001) photocathode

The spectral emission characteristics of a proof-of-concept hybrid metallized diamond(001) photocathode are presented. The quantum efficiency (QE) is shown to be determined by the photoinjection efficiency across the ohmic contact at the back metallized face, whereas the mean transverse energy (MTE) of the photoemitted electrons is consistent with an (optical)phonon-assisted and momentum-resonant Franck-Condon mechanism [Franck-Condon electron emission from polar semiconductor photocathodes, Phys. Rev. Appl. 23, 054065 (2025)] following electron drift transport to the untreated diamond(001) front emission face. Emission is observed from both the lower and upper conduction bands of diamond with positive and negative electron affinity, respectively. A potential route to the realization of a red-visible photocathode based on this concept with a sub-50 meV MTE and a QE greater than 0.1% is discussed.

Density of states↗

Channel electron multipliers - Detection efficiencies with opaque MgF2 photocathodes at XUV wavelengths

Detection efficiencies of channel electron multipliers (CEM) with opaque MgF2 photocathodes obtained in the extreme ultraviolet (XUV), 44 A to 990 A, are reported. A stable highly efficient response is reported for that interval, with no adverse effects on CEM performance. Efficiencies twice those of uncoated CEMs are obtained for 50 A to 350 A. The Mullard B419BL and Galileo 4510WL single-stage cone-cathode CEMs were used in the experiments. A rare-gas double ionization chamber was employed as absolute standard detector for 406 A to 990 A, and a flow Geiger counter filled with 96% argon and 4% isobutane for 44 A to 256 A. Absolute detection efficiencies are 10% higher from 67 A to 990 A when photocathodes are illuminated at an angle of incidence 45 deg. The photocathodes suffered no loss of response in storage (in vacuum or air) after an initial aging period. Effects of scattered UV radiation are greatly reduced when MgF2-coated CEMs are used in the XUV.

Lapson, L. B.↗

IMPROVED LIFETIME OF A HIGH SPIN POLARIZATION SUPERLATTICE PHOTOCATHODE

Highly spin polarized electron beams are required for the operation of a wide range of accelerators and instruments. The production of such electrons requires the use of Negative Electron Affinity (NEA) activated GaAs-based cathodes operated in photoelectron guns. Because of their extreme sensitivity to poor vacuum conditions the degradation of the photoemission process is so strong that NEA activated GaAs-based photocathodes can only survive in the extreme vacuums typical of DC gun. State-of-the-art on photocathode technology for spin polarized beam productions are summarized. Recent results on the use of robust NEA coating based on the Cs-Te and Cs-Sb leading to improved operational lifetime of a high spin polarization photocathode are reviewed.

47 OTHER INSTRUMENTATION↗

Engineering Surface Architectures for Improved Durability in III–V Photocathodes

GaInP2 has shown promise as the wide bandgap top junction in tandem absorber photoelectrochemical (PEC) water splitting devices. Among previously reported dual-junction PEC devices with a GaInP 2 top cell, those with the highest performance incorporate an AlInP 2 window layer (WL) to reduce surface recombination and a thin GaInP2 capping layer (CL) to protect the WL from corrosion in electrolytes. However, the stability of these III-V systems is limited, and durability continues to be a major challenge broadly in the field of PEC water splitting. This work provides a systematic investigation into the durability of GaInP 2 systems, examining the impacts of the window layer and capping layer among single junction pn-GaInP 2 photocathodes coated with an MoS 2 catalytic and protective layer. The photocathode with both a CL and WL demonstrates the highest PEC performance and longest lifetime, producing a significant current for >125 h. In situ optical imaging and post-test characterization illustrate the progression of macroscopic degradation and chemical state. The surface architecture combining an MoS 2 catalyst, CL, and WL can be translated to dual-junction PEC devices with GaInP 2 or other III-V top junctions to enable more efficient and stable PEC systems.

08 HYDROGEN↗

Buried Interfaces in Organic Photocathodes for H 2 Evolution: Fermi-Level Pinning and Recombination

Herein, we demonstrate how Fermi-level pinning at buried contacts impacts solar fuel generation in all-polymer photocathodes by systematically comparing the effects of work function, hydroxyl coverage, and hydrogen evolution using chemically modified indium tin oxide (ITO) supports. Photovoltages and net photocathode performance are improved when the ITO is passivated using phosphonic acids, independent of work function, suggesting that the passivation reduces Fermi-level pinning at the buried interface arising from blended heterojunction interactions with surface metal hydroxyls. Transient photovoltage decay reveals differences in recombination mechanisms, supported by light intensity-dependent measurements. Briefly, nonpassivated, hydrophilic contacts exhibit trap-assisted recombination, while passivated, hydrophobic contacts follow bimolecular recombination. We then investigate changes in electroactivity of hole-transfer processes as a function of scan rate and repetitive cycling using a diffusion-controlled molecular redox probe, analogous to a hole-only device achieved via the electrolyte. The nonpassivated buried contacts exhibit higher overpotentials for oxidation, indicative of hole injection/extraction barriers. We observe irreversible electron transfer via the hole-transport level of the blended heterojunction and a strong cycle dependence, consistent with changes in the hole trap state density. Passivation results in more reversible redox behaviors, consistent with more Ohmic-like contacts. Collectively, these results provide context toward the realization of durable organic photoelectrodes with optimized photovoltages and net solar-to-hydrogen conversion efficiencies via fundamental understanding of the rates of carrier generation, recombination, and transport in high-dielectric aqueous environments and opportunities to characterize buried interfaces under device-relevant electric fields.

buried interfaces↗

Using Surface Amide Couplings to Assemble Photocathodes for Solar Fuel Production Applications

A facile surface-amide coupling method was examined to attach dye and catalyst molecules to silatrane-decorated NiO electrodes. Using this method, electrodes with a push-pull dye were assembled, and characterized by photoelectrochemistry and transient absorption spectroscopy. The dye-sensitized electrodes exhibited hole injection into NiO and good photoelectrochemical stability in water, highlighting the stability of the silatrane anchoring group and the amide linkage. The amide coupling protocol was further applied to electrodes that contain a molecular proton reduction catalyst for use in photocathode architectures. Evidence for catalyst reduction was observed during hotoelectrochemical measurements and via fs-transient absorption spectroscopy demonstrating the possibility for application in photocathodes.

solar fuels, photocathode, Nickel oxide, silatrane↗

Improved lifetime of a high spin polarization superlattice photocathode

Negative Electron Affinity (NEA) activated surfaces are required to extract highly spin-polarized electron beams from GaAs-based photocathodes, but they suffer extreme sensitivity to poor vacuum conditions that results in rapid degradation of quantum efficiency. We report on a series of unconventional NEA activations on surfaces of bulk GaAs with Cs, Sb, and O 2 using different methods of oxygen exposure for optimizing photocathode performance. Additionally, one order of magnitude improvement in lifetime with respect to the standard Cs–O 2 activation is achieved without significant loss of electron spin polarization and quantum efficiency by codepositing Cs, Sb, and O 2 . A strained GaAs/GaAsP superlattice sample activated with the codeposition method demonstrated similar enhancement in lifetime near the photoemission threshold while maintaining 90% spin polarization.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

High-intensity polarized electron gun featuring distributed Bragg reflector GaAs photocathode

The polarized electron source is a critical component in accelerator facilities such as the electron–ion collider, which requires a polarized electron gun with higher voltage and higher bunch charge than existing sources. One challenge we faced was the surface charge limit of the distributed Bragg reflector GaAs/GaAsP superlattice (DBR-SL-GaAs) photocathode. We suppressed this effect by optimizing the surface doping and heat cleaning procedures. We achieved up to 11.6 nC bunch charge of polarized electron beam. In this report, we discuss the performance of tests of a DBR-SL-GaAs photocathode in the high voltage direct current gun. Possible reasons for the observed peak quantum efficiency wavelength shift are analyzed, and we addressed it by using a wavelength tunable laser. In addition, the impact of the DBR layer and laser on the lifetime is investigated in this paper. The optimal DBR-SL-GaAs operating zone has been proposed, which gave us a long lifetime and high polarization at 30 μA operation. Finally, the success of this polarized gun will be key to the future of the nuclear sciences.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Characterization of Cs 3 Sb photocathodes at cryogenic temperatures

Here, we report measurements of quantum efficiency (QE) and mean transverse energy (MTE) from Cs 3 Sb photocathodes in a wide range of photon energies at both room and cryogenic temperatures. Our measurements show a strong temperature dependence of MTE even at photon energies well above threshold, indicating the presence of strong inelastic scattering of excited electrons during transport before emission into vacuum. We also demonstrate a cathode cooling method that largely preserves the QE while reducing MTE, allowing us to achieve MTEs as low as 58 meV with 3% QE in green light from Cs 3 Sb photocathodes. Our results are crucial for producing brighter electron beams for various photoinjector applications like ultrafast electron diffraction and microscopy, x-ray free-electron lasers, and particle colliders.

36 MATERIALS SCIENCE↗

Impact of superlattice size on quantum efficiency and polarization in MOCVD-grown strained GaAs/GaAsP photocathodes

Strained superlattice GaAs photocathodes are crucial for providing high photocurrent beams of spin-polarized electrons at several accelerator facilities including the Continuous Electron Beam Accelerator Facility at Thomas Jefferson National Accelerator Facility and the future Electron–Ion Collider at Brookhaven National Laboratory. Here, in this work, we study the effects of varying the number of superlattice pairs on the polarization and photocurrent of the photocathodes. We observe a saturation in quantum efficiency beyond 30 pairs, with additional layers yielding minimal photocurrent improvement while noticeably reducing the polarization of the beam.

Chemical vapor deposition↗

Spectral emission properties of a nitrogen-doped diamond (001) photocathode: Hot electron transport and transverse momentum filtering

The electron emission properties of a single-crystal nitrogen-doped diamond(001) photocathode inserted in a 10 kV DC photoelectron gun are determined using a tunable (235–410 nm) ultraviolet laser radiation source for photoemission from both the back nitrogen-doped substrate face and the front homoepitaxially grown and undoped diamond crystal face. Here, the measured spectral trends of the mean transverse energy and quantum efficiency of the emitted electrons are both anomalous and nonmonotonic, but are shown to be consistent with (i) the known physics of electron photoexcitation from the nitrogen substitution states into the conduction bands of diamond, (ii) the energy position and dispersion characteristics of the conduction bands of diamond in the (001) emission direction, (iii) the effective electron affinity of the crystal faces, (iv) the strong electron-(optical)phonon coupling in diamond, and (v) the associated hot electron transport dynamics under energy equipartition with the optical phonons. Notably, the observed hot electron emission is shown to be restricted parallel to the photocathode surface by the low transverse effective masses of the emitting band states—a transverse momentum filtering effect.

36 MATERIALS SCIENCE↗

Photoelectrochemically Self Improving Si/GaN Photocathode: Figure 1c Raw Data

Intermittent chronoamperometry (CA) testing was performed on Si/GaN photocathode in hourly manner. The LSV scan at 0 hour, 1 hour CA, 2 hours CA, 3 hours CA, 4 hours CA, 6 hours CA, 8 hours CA and 10 hours CA were recorded to track the changes of the photoelectrochemica (PEC) performance of the photocathode. The scan range was set to be 0V vs open circuit voltage (Eoc) to -0.7V vs RHE. Test was performed under one sun illumination in 0.5M H2SO4 (pH=0.4).

photocathode↗

Spatio-temporally shaped deep UV laser source for ultrabright photocathodes using novel upconversion techniques (Final Report)

The goal of this project was to take a VUV laser system designed by Kapteyn-Murnane Labs (KMLabs)—the Hyperion VUV, and increase its functionality, efficiency, and applicability by further probing the fundamental physics taking place in the system and optimizing the system performance. More specifically, DOE accelerator applications—particularly for XFELs that require low-emittance electron beams, require precisely controlled ultrashort pulses in the deep-UV at 250-260 nm to drive the photocathode electron source. This is conventionally done using an ultrafast infrared laser, with subsequent stages of nonlinear upconversion in solid-state nonlinear-optical crystal media (principally BBO, which is commonly used for UV upconversion). However, maintaining high spatial mode beam quality, as well as precisely controlled temporal profile, has proven a persistent challenge. As a possible alternative to this approach, KMLabs has demonstrated a system that generates vacuum ultraviolet light (VUV) by upconverting pulses from an infrared ultrafast laser in a gas-filled hollow waveguide, driving a process of highly cascaded harmonic generation (HCHG). Because HCHG upconversion is done in a gas, rather than a solid, at high intensity in a guided-wave geometry, it retains an excellent beam spatial profile as well as a large spectral bandwidth that allows for control over the temperal structure of the pulse. A challenge, however, is in energy scaling of this HCHG technique to the ~1-20 μJ pulses required for photocathode applications. To-date, the pulse energies used in published HCHG work are sub-10-nJ. This project proposed to explore ways to generate higher-energy pulses using HCHG, as well as to investigate spectral and temporal shaping of the deep UV pulses by pulse shaping the infrared laser used to seed the process. Although we showed that our approach works for generating light at 259 nm, the total pulse energy achieved seems limited to approximately the same value as past work. However, the techniques we investigated may well have benefits for extending this source to much shorter wavelength output.

43 PARTICLE ACCELERATORS↗

Aqueous Photoelectrochemical CO 2 Reduction to CO and Methanol over a Silicon Photocathode Functionalized with a Cobalt Phthalocyanine Molecular Catalyst

Abstract We report a precious‐metal‐free molecular catalyst‐based photocathode that is active for aqueous CO 2 reduction to CO and methanol. The photoelectrode is composed of cobalt phthalocyanine molecules anchored on graphene oxide which is integrated via a (3‐aminopropyl)triethoxysilane linker to p‐type silicon protected by a thin film of titanium dioxide. The photocathode reduces CO 2 to CO with high selectivity at potentials as mild as 0 V versus the reversible hydrogen electrode (vs RHE). Methanol production is observed at an onset potential of −0.36 V vs RHE, and reaches a peak turnover frequency of 0.18 s −1 . To date, this is the only molecular catalyst‐based photoelectrode that is active for the six‐electron reduction of CO 2 to methanol. This work puts forth a strategy for interfacing molecular catalysts to p‐type semiconductors and demonstrates state‐of‐the‐art performance for photoelectrochemical CO 2 reduction to CO and methanol.

Shang, Bo↗