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At least 73 records · Page 4

DeFault: DEep‐Learning‐Based FAULT Delineation Using the IBDP Passive Seismic Data at the Decatur CO2 Storage Site

Abstract The carbon capture, utilization, and storage (CCUS) framework is an essential component in reducing greenhouse gas emissions, with its success hinging on the comprehensive knowledge of subsurface geology and geomechanics. Passive seismic event relocation and fault detection offer vital insights into subsurface structures and the ability to monitor fluid migration pathways. Accurate identification and localization of seismic events, however, face significant challenges, including the necessity for high‐quality seismic data and advanced computational methods. To address these challenges, we introduce a novel deep learning method, , specifically designed for passive seismic source relocation and fault delineating for passive seismic monitoring projects. By leveraging data domain‐adaptation, allows us to train a neural network with labeled synthetic data and apply it directly to field data. Using , the passive seismic sources are automatically clustered based on their recording time and spatial locations, and subsequently, faults and fractures are delineated accordingly. We demonstrate the efficacy of on a field case study involving injection related microseismic data from Decatur, Illinois area. Our approach accurately and efficiently relocated passive seismic events, identified faults and could aid in potential damage induced by seismicity. Our results highlight the potential of as a valuable tool for passive seismic monitoring, emphasizing its role in ensuring CCUS project safety. This research bolsters the understanding of subsurface characterization in CCUS, illustrating machine learning’s capacity to refine these methods. Ultimately, our work has significant implications for CCUS technology deployment, an essential strategy in combating climate change. Plain Language Summary In our quest to tackle climate change, we use a strategy known as carbon capture, utilization, and storage (CCUS) to keep greenhouse gases out of the atmosphere. This strategy relies heavily on our ability to understand what's happening deep under the earth's surface. To make sure we store super critical safely, we need to accurately map out the geological structure, especially faults, but this is tough without high‐quality data and complex computer programs. We've developed a new tool called “DeFault,” which uses advanced machine learning to improve how we find and map these underground features. “DeFault” is smart enough to learn from numerically simulated data and then apply what it’s learned to real‐world situations. It groups together seismic activity—tiny tremors and shifts in the earth—based on when and where they happen, which helps us spot where there might be cracks or faults. We tested “DeFault” in Illinois, where CO 2 is injected underground, and it successfully pinpointed where these tremors occurred and mapped out the faults, helping to prevent accidents accurately in the future. Our study shows that “DeFault” will be a powerful ally in making CCUS safer and more effective, especially for the Illinois Basin Decatur Project. Key Points Faults and fractures introduced by carbon storage can be monitored by passive seismicity DeFault algorithm enables an automatic process for accurate and efficient passive seismic event locating and clustering

58 GEOSCIENCES↗

Opportunities and Challenges in Passive Thermal-Fluid and Energy Systems

Abstract This article focuses on passive systems that are used in energy and thermal-fluid applications. These passive systems do not have moving parts and are reliable and cost-effective. Fluid motion in these passive devices could be driven by capillary force, gravity, osmotic pressure, and/or concentration gradient. The fundamental mechanisms and limitations of transport phenomena for passive systems are highlighted, followed by their applications in heat pipes, fuel cells, thermal energy storage, and desalination systems. The capabilities of the passive systems are limited by the balance between the driving force and transport resistance. Based on the fundamental understanding of fluid flow and phase change in passive systems, this study proposes associated transport phenomena and quantitative criteria to determine the maximum heat transfer rate, the transport distance, and minimum pore size of wick structures (when relevant) in these passive devices. This article concludes with the discussion of challenges and future opportunities of passive systems.

Engineering↗

Passive Oxide Film Growth Observed On the Atomic Scale

Despite of the ubiquitous presence of passivation on most metal surfaces, the microscopic-level picture of how surface passivation occurs has been hitherto unclear. Using the canonical example of the surface passivation of aluminum, here we employ in situ atomistic transmission electron microscopy observations and computational modeling to disentangle entangled microscopic processes and identify the atomic processes leading to the surface passivation. Based on atomic-scale observations of the layer-by-layer expansion of the metal lattice and its subsequent transformation into the amorphous oxide, it is shown that the surface passivation occurs via a two-stage oxidation process, in which the first stage is dominated by intralayer atomic shuffling whereas the second stage is governed by interlayer atomic disordering upon the progressive oxygen uptake. The first stage can be bypassed by increasing surface defects to promote the interlayer atomic migration that results in direct amorphization of multiple atomic layers of the metal lattice. The identified two-stage reaction mechanism and the effect of surface defects in promoting interlayer atomic shuffling can find broader applicability in utilizing surface defects to tune the mass transport and passivation kinetics, as well as the composition, structure and transport properties of the passivation films.

25 ENERGY STORAGE↗

Self-Aligned Selective Area Front Contacts on Poly -Si/SiO x Passivating Contact c -Si Solar Cells

We report both polarity poly-Si/SiO x passivating contacts in a front/back device configuration may represent the next solar cell architecture after tunnel oxide passivating contacts (TOPCon) cells, but high parasitic absorption in the front poly -Si layer often limits its performance. This work explores a wet etching technique to remove the front poly -Si in the nonmetallized regions using self-aligned metal grids as an etch mask. We systematically examine various dielectric layers (SiN x ,Al 2 O 3 , and stacks thereof) to study the repassivation of the etched n + surface, and find that an SiN x /Al 2 O 3 passivation stack can effectively repassivate the etched surface, which we attribute to field-effect passivation from the positive fixed charge from the SiN x layer, and excellent chemical passivation property from Al 2 O 3 in the form of atomic H. We demonstrate a front/back poly-Si/SiO x passivating contact device, with an open-circuit voltage (V oc ) of 690 mV, short-circuit current density (J sc ) of 39.8 mA/cm 2 , fill factor of 78%, and power conversion efficiency of 21.4%. Furthermore, simulations using SunSolve and Quokka 3 show good agreement with both the optical and electrical properties of the experimental device. The power loss analysis reveals improvements in the optical loss from the back Ti adhesion and front SiN x layers would lead to a 23.5% device. Lastly, a techno-economic model compares the production cost of this improved cell with the current TOPCon cells. Our results highlight that further cost reductions in single-sided doped poly -Si layers are needed to compete with mainstream passivated emitter and rear cell, and TOPCon technologies.

14 SOLAR ENERGY↗

Characterizing the combined impact of nucleation-driven precipitation and secondary passivation on carbon mineralization

The evolution of mineral reactive surface area is one of the primary phenomena controlling the progression and extent of mineral carbonation. The CO 2 mineralization begins with nucleation of crystals that provide initial surface area for subsequent growth of the mineral. However, many reactive transport models (RTMs) for CO 2 mineralization do not include the nucleation process. The few RTMs that do include it are yet to be validated against experimental data. Similarly, many RTMs ignore passivating effects of the secondary mineral, which coats the surface of the dissolving mineral, slow down the reaction process, and reduce the total extent of carbonation. Furthermore, the combined impact of nucleation and passivation on carbon mineralization is yet to be properly characterized. In this study, we consider the coupled effects of passivation and nucleation on the mineralization extent. The nucleation-driven precipitation model relies on the formation of nuclei to provide a surface area for crystal growth, while a new model is proposed to account for passivation effects. Our analysis shows that (i) omission of nucleation leads to overestimation of extent of mineralization, and (ii) omission of passivation leads to overestimation of host rock reactivity. The model was evaluated via comparison with CO 2 mineralization data from the literature and models that ignore these processes. We observed that including nucleation and passivation lead to closer predictions of the CO 2 mineralization extent. Therefore, this study highlights the importance of including the coupled nucleation-driven precipitation and secondary passivation in RTMs. Here, the findings from the study can be applied in various scientific and engineering applications such as petroleum production, cement carbonation, CO 2 sequestration, chemical weathering, and concrete degradation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Enhanced Surface Passivation by Atomic Layer Deposited Al 2 O 3 for Ultraviolet Sensitive Silicon Photomultipliers

Here, we describe a superior passivation of p-type (p + ) Si surface by Al 2 O 3 thin film that is synthesized by plasma-assisted atomic layer deposition for ultraviolet sensitive silicon photomultipliers (SiPM), compared to conventional SiO 2 and SiN x passivation schemes. The superiority of Al 2 O 3 passivation is due to not only a sufficiently low interface defect density but also a high density of built-in negative charges. A 7 nm thin Al 2 O 3 film can yield an emitter saturation current density of ~8 fA/cm 2 on high sheet resistance p + layer, compared to ~60 and ~1480 fA/cm 2 for thermal SiO 2 and SiN x passivation. This superior surface passivation allows the photon-generated carriers to have higher probabilities to reach the high-field region to trigger an avalanche event. In addition, Al 2 O 3 thin film provides very low values of effective surface recombination velocity on low resistivity n-type and p-type Si surfaces, which can lead to well-passivated surface features on guard ring and trench isolation regions of SiPM. These demonstrate the potential of Al 2 O 3 thin film passivation to improve quantum efficiency and thus photo-detection efficiency of ultraviolet sensitive SiPM with p + /n - /n/n + structure.

36 MATERIALS SCIENCE↗

National Spherical Torus eXperiment - Upgrade NSTX-U: Structural Analysis of Passive Plates Support Brackets

The objective of this analysis is to estimate and assess the stresses in the passive plates caused by a limiting plasma disruption. The objective of this calculation is also to address observed damage to mounting hardware after completion of NSTX operation. These observations initiated diagnostic efforts during the Upgrade project to monitor the severity of the disruptions that were causing the damage, and planned instrumentation to trend the behavior of the mounting hardware. The Recovery Project mission for the passive plate hardware is to appropriately reinforce the passive plates with stainless steel ribs mounted on the back of the plate to reduce their flexure and stress and reinforcements of the “biscuit” components of the bracketry to transfer loads without damage to bolts, biscuits, and bracket plates and welds. Mid-plane disruptions and quenches were manageable with NSTX vintage hardware. The Vertical Displacement Event (VDE) disruptions position the plasma closer to the passive plates and are more severe than the centered plasma. Earlier work pointed to the P1-P5 VDE as limiting. This has been confirmed by A. Brooks work in support of the load generation effort in reference. During vertical displacement large counter currents are generated in the plate as the plasma approaches it. - as would be expected from passive plates. When the plasma disrupts the currents in the plates are reversed, which also reverses the loading on the plates. This report documents the methodology and results of transient structural analysis on the plasma, passive plates support brackets. The loads induced by eddy and halo currents have been considered, and were generated using a separate electromagnetic analysis (NSTXU_1_11_2_1_CALC_051). The structural model also incorporates the effects from preload. Calculation was performed with the assumption that existing biscuits are not participating in the load bearing except the biscuits connected to jumper bolts, which are fully engaged. Results show that with the planned reinforcements, Passive plates and mounting structures satisfy static and fatigue criteria in all areas except welds, where separate analysis was performed. Both symmetric and asymmetric (with locating block) designs were analyzed, and although stresses were higher without locating block they still satisfy NSTX design criteria.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

In-situ hydrogen microstructural characterization of Si heterojunction passivation: Addressing V OC degradation and mitigation pathways

Si heterojunction (SHJ) solar cells have demonstrated record efficiency >27%, approaching the theoretical limit of ≈ 29%, primarily due to best surface/interface defect passivation provided by deposited thin layers of hydrogenated amorphous silicon (a-Si:H). Such excellent surface/interface passivation reduces recombination loss and result in >100 mV improvement of cell open circuit voltage (V OC ) to ≈ 750 mV, thus the cell efficiency. However, fielded SHJ modules exhibit loss of V OC and hence efficiency over time in years, presumably due to degradation related to a-Si:H layers. This adversely affects the technology’s market acceptance, and levelized cost of energy (LCOE). It is hypothesized that the origin of a-Si:H degradation is somehow related to the presence of weak Si–Si bonds and hydrogen in a-Si:H films. The objective of this project is to test this hypothesis by directly measuring chemical and structural changes occurring within SHJ component layers and solar cells. This is achieved by developing an innovative in-situ Fourier transform infrared (FTIR) spectrometry apparatus to monitor hydrogen microstructural changes occurring within amorphous silicon and decipher hydrogen evolution kinetics over time when samples are exposed to heat and/or light stress. These in-situ measured hydrogen microstructural changes are correlated to the changes in effective minority carrier lifetime (τ eff ), implied V OC (iV OC ), surface recombination velocity (S), and cell V OC . These mechanistic understandings will provide critical guidance to mitigate the V OC -driven degradation of SHJ solar cell performance. Passivation optimization and degradation analysis of individual SHJ component structures were achieved through systematic deposition of three symmetric structures and the completed SHJ solar cell structure. The three symmetric structures used were intrinsic a-Si:H [(i)a-Si:H] layers in a bilayer structure, intrinsic and p-type doped stacked layers [(i-p)a-Si:H] representing the front heterojunction in the SHJ cell, and intrinsic and n-typed doped stacked layers [(i-n)a-Si:H] representing the back-side back surface field (BSF) in the SHJ cell. State-of-the-art passivation qualities are demonstrated by a champion iV OC of 740 mV for the (i)a-Si:H layers, and the (i-n)a-Si:H symmetric structure. A 725 mV iV OC is observed for the (i-p)a-Si:H symmetric structure. These symmetric passivated SHJ component structures were subsequently subjected to different accelerated lifetime (ALT) stressors to identify which conditions contribute the most to iV OC degradation. Degradation of the thin (10 nm) (i)a-Si:H passivation layers without any additional overlying layers is minimal; complexity of this study arises due to unavoidable surface oxidation of (i)a-Si:H layer during most of the stress application, which is likely irrelevant for a full SHJ cell configuration with overlying protective layers. The iV OC degradation of symmetric structures is found to occur primarily at the (i-p)a-Si:H passivation stack under dark heat stress with associated hydrogen loss from the (p)a-Si:H layer. An activation energy for increase in S (defect creation) of 0.65 eV can be correlated to the activation energy of ≈ 0.4 eV for hydrogen loss from the (i-p)a-Si:H stack. This also suggests the presence of weakly bonded hydrogen in the (p)a-Si:H films, which effuses out of the film stack at such low activation energy. When light and heat stress are applied together, similar hydrogen loss from (i-p)a-Si:H stack is observed, however, does not appreciably degrade iV OC or increase S. This is an important result and departure from direct correlation between hydrogen loss and defect creation. This perhaps indicates additional defect chemistries or annealing that might be occurring in the presence of light requiring further detailed defect measurements. The full SHJ cell structure used for this project is depicted in Fig.1(d). SHJ cells with an initial V OC ≈ 700 mV were fabricated and subjected to similar ALT stress conditions. Cell V OC is found to degrade the most under dark heat stress and is confirmed by observed hydrogen migration out of the (i-p)a-Si:H stack. However, hydrogen cannot escape from the cell stack, it accumulates near the (p)a-Si:H/ITO contact interface, where ITO acts as a barrier preventing hydrogen loss. Furthermore, light-heat combined stress does not degrade V OC appreciably, confirming the occurrence of a defect annealing process.

14 SOLAR ENERGY↗

Evaluating the roles of electrolyte components on the passivation of silicon anodes

A protocol was recently developed to compare calendar life using a constant potential while monitoring the electrical current required to maintain the potential. Here, this calendar life protocol is used with electrolyte formulations containing various mole fractions of ethylene carbonate (EC), ethyl methyl carbonate (EMC), and LiPF 6 to elucidate the role each component plays in passivation for high silicon anodes. Together, EC and LiPF 6 lead to higher currents, and thus poorer passivation, whereas EMC acts as a spectator. The variation of the components' mole fraction also changes the solid-electrolyte interphase (SEI) composition, as measured by x-ray photoelectron spectroscopy. Importantly, higher LiPF 6 content leads to increased LiF as well as increased current, indicating that higher LiF content does not enhance the passivation of the silicon surface. Finding that EC did not yield a passivating SEI, instead ethylene sulfite, sulfolane, and propylene carbonate (PC) were used in place of EC. Using ethylene sulfite and sulfolane resulted in poorer passivation compared to EC, whereas PC resulted in superior passivation. As a result, the superior passivation may be related to more stable lithium-solvent complexes.

25 ENERGY STORAGE↗

Bidentate Lewis bases are preferred for passivation of MAPbI 3 surfaces: A time-domain ab initio analysis

We report chemical passivation is a predominant approach to inhibit intrinsic defects responsible for electron–hole recombination in perovskite solar cells. Using time-domain density functional theory combined with nonadiabatic molecular dynamics, we demonstrate defect passivation by separation of electrons and holes in metal halide perovskites (MHPs), and show that bidentate ligands exhibit the best performance. Defects in traditional semiconductors create deep midgap states, and passivation eliminates these states. In contrast, common defects produce no deep midgap states in MHPs. Instead, defects localize electrons and holes around defect sites, enhancing electron–hole interaction. Defect passivation in MHPs acts to separate charges, decreasing electron–hole and charge–phonon interactions, and increasing charge lifetimes. Bidentate ligands work best, because they can passivate both unsaturated chemical bonds created due to vacancy defects. Bidentate ligands with spatially separated binding sites are preferred, since they provide better match to the sparse inorganic lattice of MHPs. Similar to the Lewis base ligands, water also acts as a ligand and extends charge lifetimes, with the oxygen atom donating its lone electron pair to the defect site. However, water accelerates chemical degradation of MHPs. The binding energy of most ligands is larger than that of water, and therefore, the ligands displace water, increase MHP stability and prolong carrier lifetimes. The established physical mechanism of defect passivation, and the specific principles guiding the choice of passivating molecules advance our understanding of the exceptional properties of MHPs and suggest routes for further improvement of MHP performance in solar energy and optoelectronic applications.

36 MATERIALS SCIENCE↗

Passivation and Degradation of Sulfur-Treated Silicon Surfaces for Photovoltaics

Sulfur-based passivation for silicon surfaces using H2S gas is an alternative passivation method to reduce the thermal budget for Si photovoltaics. To understand the impact of the high-quality passivation and an observed passivation efficiency decrease after air exposure, we have studied the chemical surface structure by X-ray photoelectron spectroscopy (XPS), X-ray Auger electron spectroscopy (XAES), and S and Si L2,3 X-ray emission spectroscopy (XES). On the S-passivated silicon surfaces, we find the formation of S–Si bonds, in addition to some Si–O bonds. Upon air exposure, sulfur partially desorbs from the Si surface and an increased presence of Si–O and S–O bonds is observed. We identify that well-defined S–Si bonds are crucial to maintain high-quality surface passivation for Si photovoltaics, which allows further optimization of the fabrication process for S-based passivation on silicon.

Hua, Amandee↗

Carrier Recombination Dynamics of Surface-Passivated Epitaxial (100)Ge, (110)Ge, and (111)Ge Layers by Atomic Layer Deposited Al2O3

Germanium (Ge) and its heterostructures with compound semiconductors offer a unique optoelectronic functionality due to its pseudo-bandgap nature, that can be transformed to a direct bandgap material by providing strain and/or mixing with tin. Moreover, two crystal surfaces, (100)Ge and (110)Ge, that are technologically important for ultralow power fin or nanosheet transistors, could offer unprecedented properties with reduced surface defects after passivating these surfaces by atomic layer deposited (ALD) dielectrics. In this work, the crystallographically oriented epitaxial Ge/AlAs heterostructures were grown and passivated with ALD Al2O3 dielectrics, and the microwave photoconductive decay (u-PCD) technique was employed to evaluate carrier lifetimes at room temperature. The X-ray photoelectron spectroscopy analysis reveals no role of orientation effect in the quality of the ALD Al2O3 dielectric on oriented Ge layers. The carrier lifetimes measured using the u-PCD technique were benchmarked against unpassivated Ge/AlAs heterostructures. Excitation wavelengths of 1500 and 1800 nm with an estimated injection level of ~10^13 cm-3 were selected to measure the orientation-specific carrier lifetimes. The carrier lifetime was increased from 390 ns to 565 ns for (100)Ge and from 260 ns to 440 ns for (110)Ge orientations with passivation, whereas the carrier lifetime is almost unchanged for (111)Ge after passivation. This behavior indicates a strong dependence of the measured lifetime on surface orientation and surface passivation. The observed increase (>1.5x) in lifetime with Al2O3-passivated (100)Ge and (110)Ge surfaces is due to the lower surface recombination velocity compared to unpassivated Ge/AlAs heterostructures. The enhancement of carrier lifetime from passivated Ge/AlAs heterostructures with (100)Ge and (110)Ge surface orientations offers a path for the development of nanoscale transistors due to the reduced interface state density.

Al2O3↗

The stability of Cl-, Br-, and I-passivated Si(100)-(2 × 1) in ambient environments for atomically-precise pattern preservation

Abstract Atomic precision advanced manufacturing (APAM) leverages the highly reactive nature of Si dangling bonds relative to H- or Cl-passivated Si to selectively adsorb precursor molecules into lithographically defined areas with sub-nanometer resolution. Due to the high reactivity of dangling bonds, this process is confined to ultra-high vacuum (UHV) environments, which currently limits its commercialization and broad-based appeal. In this work, we explore the use of halogen adatoms to preserve APAM-derived lithographic patterns outside of UHV to enable facile transfer into real-world commercial processes. Specifically, we examine the stability of H-, Cl-, Br-, and I-passivated Si(100) in inert N 2 and ambient environments. Characterization with scanning tunneling microscopy and x-ray photoelectron spectroscopy (XPS) confirmed that each of the fully passivated surfaces were resistant to oxidation in 1 atm of N 2 for up to 44 h. Varying levels of surface degradation and contamination were observed upon exposure to the laboratory ambient environment. Characterization by ex situ XPS after ambient exposures ranging from 15 min to 8 h indicated the Br– and I–passivated Si surfaces were highly resistant to degradation, while Cl–passivated Si showed signs of oxidation within minutes of ambient exposure. As a proof-of-principle demonstration of pattern preservation, a H–passivated Si sample patterned and passivated with independent Cl, Br, I, and bare Si regions was shown to maintain its integrity in all but the bare Si region post-exposure to an N 2 environment. The successful demonstration of the preservation of APAM patterns outside of UHV environments opens new possibilities for transporting atomically-precise devices outside of UHV for integrating with non-UHV processes, such as other chemistries and commercial semiconductor device processes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Passive spiral galaxies deeply captured by Subaru Hyper Suprime-Cam

Abstract This paper presents a thousand passive spiral galaxy samples at z = 0.01–0.3 based on a combined analysis of the Third Public Data Release of the Hyper Suprime-Cam Subaru Strategic Program (HSC-SSP PDR3) and the GALEX–SDSS–WISE Legacy Catalog (GSWLC-2). Among 54871 gri galaxy cutouts taken from the HSC-SSP PDR3 over 1072 deg2, we conducted a search with deep-learning morphological classification for candidates of passive spirals below the star-forming main sequence derived by ultraviolet to mid-infrared spectral energy distribution fitting in the GSWLC-2. We then classified the candidates into 1100 passive spirals and 1141 secondary samples based on visual inspections. Most of the latter cases are considered to be passive ringed S0 or pseudo-ringed galaxies. The remaining secondary samples have ambiguous morphologies, including two peculiar objects with diamond-shaped stellar wings. The selected passive spirals have a similar distribution to the general quiescent galaxies on the EWHδ–Dn4000 diagram and concentration indices. Moreover, we detected an enhanced passive fraction of spiral galaxies in X-ray clusters. Passive spirals in galaxy clusters are preferentially located in the midterm or late infall phase on the phase–space diagram, supporting the ram pressure scenario, which has been widely advocated in previous studies. The source catalog and gri-composite images are available on the HSC-SSP PDR3 website 〈https://hsc.mtk.nao.ac.jp/ssp/data-release/〉. Future updates, including integration with a citizen science project dedicated to the HSC data, will achieve more effective and comprehensive classifications.

Shimakawa, Rhythm (ORCID:0000000344422750)↗

Surface-Defect-Passivation-Enabled Near-Unity Charge Collection Efficiency in Bromide-Based Perovskite Gamma-Ray Spectrum Devices

Hybrid lead halide perovskites have superior charge transport properties to all-inorganic perovskites, but high-resolution spectroscopic radiation detectors have not been realized. Here we show that surface deep traps severely limit charge collection in formamidinium lead bromide (FAPbBr3) single-crystal devices, despite having a good bulk transport property. Three types of defect on the crystal surface, namely, FA vacancies, uncoordinated lead and Pb-Pb dimers caused by bromide loss, are found to form deep traps, resulting in non-radiative charge recombinations at the metal/perovskite interface. By tailoring the passivation functional groups, we find that ammonium bromide can passivate all these three deep traps on FAPbBr3 surfaces, improving the charge collection efficiency to near unity. The comparable bulk and surface recombination lifetimes indicate that all the surface defects are effectively passivated. Surface passivation also reduces the dark current by 10 times and decreases the dark counts by ~60 times. The energy resolution of the 137Cs spectra acquired using the FAPbBr3 detectors is improved from 5.7% to 1.7% when all the surface defects are passivated without changing the bulk properties, which is the best among solution-grown semiconductor detectors. Surface passivation is stable for more than six months, and FAPbBr3 spectroscopic detectors can operate at unprecedented high temperatures of more than 130 degrees C.

gamma ray↗

Control Design of Passive Grid-Forming Inverters in Port-Hamiltonian Framework

This article presents a modified dispatchable virtual oscillator control approach for achieving the passivity of gridforming inverters (GFMs), without assuming constant voltage and constant frequency. The proposed control framework utilizes the Port-Hamiltonian (PH) based structure that mimics the behaviors of coupled harmonic oscillators, along with an energy ‘pumpingor-damping’ block and the Control by Interconnection (CbI) technique, to render the inverter passive. Once passivity is achieved, transient stability of the system will be guaranteed. The proposed control framework is composed of three loops: an outer power dispatching loop that generates the voltage and frequency references, a virtual oscillator loop that emulates the spontaneous synchronization of oscillators, and an inductor current loop that maintains lossless interconnection in PH systems. In conclusion, the study shows that the proposed control approach ensures the passivity of GFMs, facilitating the transient stability design of multi-inverter systems, as interconnections of passive systems remain passive and stable.

42 ENGINEERING↗

Investigation of In Situ and Ex Situ Passivation of Pyrophoric Uranium–Niobium Alloy Powder

This work evaluates the effectiveness of in situ and ex situ passivation methods for mitigating the pyrophoricity of uranium–6 wt.% niobium spherical powders produced via the hydride–dehydride process coupled with plasma spheroidization. Oxide layer thickness was characterized using STEM/EDX, and pyrophoricity was assessed by a UN-recommended test method, which involves directly dropping the powders in the air. In situ passivation, performed by introducing flowing oxygen during spheroidization, produced oxide layers ranging from tens to hundreds of nanometers but resulted in inconsistent pyrophoricity mitigation at lower oxygen flow rates. Ex situ passivation, achieved by slow oxygen exposure over several months, formed uniform oxide layers of approximately 20 nm and consistently mitigated pyrophoricity. Despite requiring higher bulk oxygen content, in situ passivation enables faster processing and control of oxygen, while ex situ passivation achieves superior oxide uniformity with lower oxygen incorporation. These findings highlight the trade-offs between passivation methods and provide a foundation for improving the safety and scalability of reactive metal powder production.

U-6Nb↗

Effect of Iron Contamination and Polysilicon Gettering on the Performance of Polysilicon‐Based Passivating Contact Solar Cells

Over the past decade, silicon solar cells with carrier-selective passivating contacts based on polysilicon capping an ultra-thin silicon oxide (commonly known as TOPCon or POLO) have demonstrated promising efficiency potentials and are regarded as an evolutionary upgrade to the PERC (passivated emitter and rear contact) cells in manufacturing. The polysilicon-based passivating contacts also exhibit excellent gettering effects that relax the wafer and cleanroom requirements to some extent. Here, in this work, we experimentally explore the impact of bulk iron contamination and polysilicon gettering on the passivation quality of the polysilicon/oxide structure and the resulting solar cells performance. Results show that both n- and p-type polysilicon/oxide passivating contacts are not affected by iron gettering, demonstrating robust and stable passivation quality. However, for a very high bulk iron contamination (1 × 10 13 cm −3 ), the accumulated iron in the p-type lightly boron-doped emitter in crystalline silicon would degrade the emitter saturation current density. This can cause a reduction in both open-circuit voltage and short-circuit current. Meanwhile, this very high iron content (1 × 10 13 cm −3 ) can further degrade the fill factor and temperature coefficient of the cells. On the other hand, for an initial iron content of 2 × 10 12 cm −3 , which should be well above the iron level in the current industrial Czochralski silicon wafers, the resulting cells demonstrate similar performance as the control group with no intentional iron contamination. This work brings attention to both the benefits of polysilicon gettering effects as well as the potential degradation due to the accumulation of metal impurities in the p-type emitter region.

14 SOLAR ENERGY↗