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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRSDate not supplied

Stress-Activated Positive Holes (O− in a Matrix of O2–) Cause DNA Damage in Surface-Dwelling Organisms: Unveiling Mutation-Induced Secrets of Nature

Peroxy defects consist of pairs of tightly bonded oxygen anions in the –1 valence state such as in O3X/OO\YO3 with X, Y = Si4+, Al3+ etc. They commonly occur in igneous, metamorphic and many sedimentary rocks. When such rocks are stressed by tectonic forces, peroxy defects break up, releasing highly mobile electronic charge carriers: defect electrons in the O2– sublattice, i.e. unbound O–, known as “positive holes”, h•. The h• can flow out of stressed rock volumes, spreading far and wide, causing electric currents and electrochemical reactions. This study explores how the h• impact the electron flow in the electron transport chain (ETC) of organisms on the surface of rocks such as gabbro and granite. We found that, by forming hydroxyl radicals and superoxide anions, the h• disrupt the in vivo coordination of reduction-oxidation reactions that are essential for the timing of the redox cycle. Our observations show that stress activation of h• delays the sprouting of certain plant seeds and impedes the growth of yeast cultures, Saccharomyces cerevisiae. The h• induce mutations and affect plant development as evidenced by reduced stem length and leaf size. At the same time, the h• serve as a source of abiotic oxidation, capable of forming various organic compounds in situ. Through the generation of radical species that create new carbon-carbon bonds the h• facilitate the abiotic synthesis of hydrocarbons and other organic molecules essential to life, including porphyrins. Our findings highlight the intricate interplay between positive holes, redox timing, and biological processes, revealing their significant role in influencing the growth and development of organisms in tectonically stressed crustal environments. Understanding these effects enhances our broader comprehension of redox biology and the influence of environmental factors on cellular development in natural settings.

astrobiology↗
NASA NTRSDate not supplied

Infant Mortality and Wear-Out Failures in Polymer and MnO2 Tantalum Capacitors

Reliability testing of modern tantalum capacitors shows the presence of both types, infant mortality (IM) and wearout (WO) failures. To assure reliable operation, the probability of IM failures should be reduced to below the specified level, and the time of WO inception should be greater than the required useful life of the parts at operation conditions. In this work, several types of MnO2 and polymer cathode tantalum capacitors have been tested at highly accelerated conditions to assess voltage acceleration factors, determine adequate burn-in conditions, and assess the useful life. A modified time dependent dielectric breakdown (TDDB) model has been suggested to explain both types of failure, and a physical mechanism of degradation that is based on migration and reactions of oxygen vacancies explains increase of the defect related, IM failures with the level of stress.

tantalum capacitors↗
NASA NTRS1980

Origin of reverse annealing in radiation-damaged silicon solar cells

The paper employs relative defect concentrations, energy levels, capture cross sections, and minority carrier diffusion lengths in order to identify the defect responsible for the reverse annealing observed in a radiation damaged n(+)/p silicon solar cell. It is reported that the responsible defect, with the energy level at +0.30 eV, has been tentatively identified as boron-oxygen-vacancy complex. In conclusion, it is shown that removal of this defect could result in significant cell recovery when annealing at temperatures well below the currently required 400 C.

Weinberg, I.↗
NASA NTRS1992

Low Earth orbit atomic oxygen simulation for durability evaluation of solar reflector surfaces

To evaluate the performance and durability of solar reflector surfaces in the atomic oxygen environment typical of low Earth orbit (LEO), one must expose the reflector surface either directly to LEO or to ground-laboratory atomic oxygen environments. Although actual LEO exposures are most desired, such opportunities are typically scarce, expensive, and of limited duration. As a result, ground-laboratory exposures must be relied upon as the most practical long-term durability evaluation technique. Plasma ashers are widely used as LEO simulation facilities by producing atomic oxygen environments for durability evaluation of potential spacecraft materials. Atomic oxygen arrival differs between ground and space exposure in that plasma asher exposure produces isotropic arrival and space solar tracking produces sweeping arrival. Differences in initial impact reaction probability occur, dependent upon the energy and species existing in these environments. Due to the variations in ground-laboratory and space atomic oxygen, quantification of in-space performance based on plasma asher testing is not straightforward. The various atomic oxygen interactions that can occur with reflector surfaces, such as undercutting in organic substrates at protective coating defect sites, ground-laboratory techniques recommended for evaluating the atomic oxygen durability of reflectors based on asher exposures, and computational techniques which make use of ground-laboratory atomic oxygen exposure to predict in-space LEO durability are addressed.

Degroh, Kim K.↗
NASA NTRS1984

Oxygen diffusion in alpha-Al2O3

Oxygen self diffusion coefficients were determined in single crystal alpha-Al2O3 using the gas exchange technique. The samples were semi-infinite slabs cut from five different boules with varying background impurities. The diffusion direction was parallel to the c-axis. The tracer profiles were determined by two techniques, single spectrum proton activation and secondary ion mass spectrometry. The SIMS proved to be a more useful tool. The determined diffusion coefficients, which were insensitive to impurity levels and oxygen partial pressure, could be described by D = .00151 exp (-572kJ/RT) sq m/s. The insensitivities are discussed in terms of point defect clustering. Two independent models are consistent with the findings, the first considers the clusters as immobile point defect traps which buffer changes in the defect chemistry. The second considers clusters to be mobile and oxygen diffusion to be intrinsic behavior, the mechanism for oxygen transport involving neutral clusters of Schottky quintuplets.

Cawley, J. D.↗
NASA NTRS1990

Surface defects and chemistry on the SnO2(110) surface

A variety of ultrahigh vacuum (UHV) surface science techniques have been used to characterize the structural, electronic and chemical properties of SnO2(110), a model catalytic surface. Two types of surface oxygen vacancies have been identified, each associated with different band gap (defect) electronic states. Adsorption experiments show that the interaction of simple gases with this surface occurs primarily through these oxygen vacancies and can show site-specificity to only one of the two types of vacancies.

Cox, David F.↗
NASA NTRS1973

Rates and mechanisms of the atomic oxygen reaction with nickel at elevated temperatures

The oxidation of nickel by atomic oxygen at pressure from 1 to 45 N/sq m between 1050 and 1250 K was investigated. In these ranges, the oxidation was found to follow the parobolic rate law, viz., K sub p = 0.0000114 exp(-13410/T) g squared/cm4/sec for films of greater than 1 micron thickness and was pressure independent. The activation enthalpy for the oxidation reaction was 112 + or - 11 kj/mole (27 + or - 3 kcal/mole). Of a number of possible mechanisms and defect structures considered, it was shown that the most likely was a saturated surface defect model for atomic oxidation, based on reaction activation enthalpies, impurity effects, pressure independence, and magnitudes of rates. A model judged somewhat less likely was one having doubly ionized cationic defects rate controlling in both atomic and molecular oxygen. From comparisons of the appropriate processes, the following enthalpy values were derived: enthalpy of activation (Ni diffusion in Ni0) = 110 + or - 30 kj/mole and standard enthalpy change for reaction formation (doubly ionized cation vacancies in Ni0 from atomic oxygen)= -9 + or - 25 kj/mole.

Christian, J. D.↗
NASA NTRS1981

Material and processing needs for silicon solar cells in space

The technical concerns of NASA in the area of space grade solar cells are summarized. Solar power needs are projected through 1987. The degradation of solar cell performance due to the effects of radiation on impurities and crystal defects and the improved performance of float zone silicon are illustrated. The reduction of oxygen and carbon in float zone silicon allows for much faster low temperature annealing of the defects. The effects of improved crystal purity on cell performance are summarized.

Brandhorst, H. W., Jr.↗
NASA NTRS1987

Resonant enhanced multiphoton ionization studies of atomic oxygen

In resonant enhanced multiphoton ionization (REMPI), an atom absorbs several photons making a transition to a resonant intermediate state and subsequently ionizing out of it. With currently available tunable narrow-band lasers, the extreme sensitivity of REMPI to the specific arrangement of levels can be used to selectively probe minute amounts of a single species (atom) in a host of background material. Determination of the number density of atoms from the observed REMPI signal requires a knowledge of the multiphoton ionization cross sections. The REMPI of atomic oxygen was investigated through various excitation schemes that are feasible with available light sources. Using quantum defect theory (QDT) to estimate the various atomic parameters, the REMPI dynamics in atomic oxygen were studied incorporating the effects of saturation and a.c. Stark shifts. Results are presented for REMPI probabilities for excitation through various 2p(3) (4S sup o) np(3)P and 2p(3) (4S sup o) nf(3)F levels.

Dixit, S. N.↗
NASA NTRS1980

Radiation damage annealing mechanisms and possible low temperature annealing in silicon solar cells

Deep level transient spectroscopy and the Shockley-Read-Hall recombination theory are used to identify the defect responsible for reverse annealing in 2 ohm-cm n+/p silicon solar cells. This defect, with energy level at Ev + 0.30 eV, has been tentatively identified as a boron-oxygen-vacancy complex. It has been also determined by calculation that the removal of this defect could result in significant annealing at temperatures as low as 200 C for 2 ohm-cm and lower resistivity cells.

Weinberg, I.↗
NASA NTRS2002

Issues and Consequences of Atomic Oxygen Undercutting of Protected Polymers in Low Earth Orbit

Hydrocarbon based polymers that are exposed to atomic oxygen in low Earth orbit are slowly oxidized which results in recession of their surface. Atomic oxygen protective coatings have been developed which are both durable to atomic oxygen and effective in protecting underlying polymers. However, scratches, pin window defects, polymer surface roughness and protective coating layer configuration can result in erosion and potential failure of protected thin polymer films even though the coatings are themselves atomic oxygen durable. This paper will present issues that cause protective coatings to become ineffective in some cases yet effective in others due to the details of their specific application. Observed in-space examples of failed and successfully protected materials using identical protective thin films will be discussed and analyzed. Proposed approaches to prevent the failures that have been observed will also be presented.

Banks, Bruce A.↗
NASA NTRS1991

Atomic oxygen undercutting of LDEF aluminized Kapton multilayer insulation

Atomic oxygen undercutting is a potential threat to vulnerable spacecraft materials which have been shielded with an atomic oxygen protective coating. This is due to atomic oxygen attack of oxidizable materials at the point of microscopic defects in the protective coatings which occur during fabrication and handling, or from micrometeoroid and debris bombardment in space. An aluminized Kapton multilayer insulation sample which was flown on the leading edge of the Long Duration Exposure Facility (LDEF) was used to study low Earth orbit (LEO) directed ram oxygen undercutting. Cracks in the aluminized coatings around the vent holes provided excellent locations for evaluation of atomic oxygen undercutting. The undercutting profiles were compared to Monte Carlo models which predict LEO ram atomic oxygen attack. The shape of the undercurrent profile was found to vary with crack width, which is proportional to the number of atomic oxygen atoms entering the crack. The resulting atomic oxygen undercut profiles which occurred on LDEF indicated wide undercut cavities in spite of the fixed ram orientation. Potential causes of the observed undercutting profiles will be presented. Implications of the undercutting profiles relevant to Space Station Freedom will also be discussed.

Degroh, Kim K.↗
NASA NTRS1996

Atomic Oxygen Durability Testing of an International Space Station Solar Array Validation Coupon

An International Space Station solar array validation coupon was exposed in a directed atomic oxygen beam for space environment durability testing at the NASA Lewis Research Center. Exposure to atomic oxygen and intermittent tensioning of the solar array were conducted to verify the solar array#s durability to low Earth orbital atomic oxygen and to the docking threat of plume loading both of which are anticipated over its expected mission life of fifteen years. The validation coupon was mounted on a specially designed rotisserie. The rotisserie mounting enabled the solar and anti-solar facing side of the array to be exposed to directed atomic oxygen in a sweeping arrival process replicating space exposure. The rotisserie mounting also enabled tensioning, in order to examine the durability of the array and its hinge to simulated plume loads. Flash testing to verify electrical performance of the solar array was performed with a solar simulator before and after the exposure to atomic oxygen and tensile loading. Results of the flash testing indicated little or no degradation in the solar array#s performance. Photographs were also taken of the array before and after the durability testing and are included along with comparisons and discussions in this report. The amount of atomic oxygen damage appeared minor with the exception of a very few isolated defects. There were also no indications that the simulated plume loadings had weakened or damaged the array, even though there was some erosion of Kapton due to atomic oxygen attack. Based on the results of this testing, it is apparent that the International Space Station#s solar arrays should survive the low Earth orbital atomic oxygen environment and docking threats which are anticipated over its expected mission life.

Forkapa, Mark J.↗
NASA NTRS1995

Sub-ppb Oxygen Contaminant Detection in Semi-Conductor Processing

Gaseous contaminants such as oxygen, water vapor, nitrogen and hydrocarbons are often present in the processing environment in semiconductor device fabrication and in containerless materials processing. The contaminants arise as a result of outgassing from hot surfaces or they may be part of the impurities in commercial ultra-high purity gases. Among these gaseous contaminants, oxygen is the most reactive and, therefore, has the most adverse effects on the end product. There has been an intense effort at the Jet Propulsion Laboratory to develop different types of oxygen sorbents to reduce oxygen concentration in a microgravity processing environment to sub-ppb (parts-per-billion) levels. Higher concentrations can lead to rapid surface oxide formation, hence reducing the quality of semiconductor devices. If the concentration of oxygen in a processing chamber at 1000oC is in the ppb level, it will only take approximately 10 seconds for an oxide layer to form on the surface of a sample. The interaction of oxygen with the water surface can lead to the formation of localized defects in semi-conductor devices, hence decreasing the manufacturing yield. For example, efficient production of 64 Mb RAM chips requires contaminations below ppb levels. This paper describes a technique for measuring trace quantities of oxygen contaminants by recording the monoatomic negative ions, O-, using mass spectrometry. The O- formation from the e--O2 interaction utilizes the electron dissociative attachment method that is greatly enhanced at the resonant energy (6.8 eV). The device combines a small gridded electron ionizer with a compact mass spectrometer. The concentrations of oxygen have been measured using the method of standard additions by diluting O2 in N2. The lowest detection limit obtained was 1.2 kHz (O- count rate) at a concentration of 10-10, corresponding to 0.1 ppb.

Sub-ppb Contaminant↗
NASA NTRS1994

Oxidation performance of platinum-clad Mo-47Re alloy

The alloy Mo-47Re has favorable mechanical properties at temperatures above 1400 C, but it undergoes severe oxidation when used in air with no protective coating. To shield the alloy from oxidation, platinum cladding has been evaluated. The unprotected alloy undergoes catastrophic oxidation under static and dynamic oxidation conditions. The platinum cladding provides good protection from static and dynamic oxidation for moderate times at 1260 C. Samples tested for longer times under static oxidation conditions experienced severe oxidation. The data suggest that oxidation results from the transport of oxygen through the grain boundaries and through the pinhole defects of the platinum cladding.

Clark, Ronald K.↗
NASA NTRS2002

Fast Three-Dimensional Method of Modeling Atomic Oxygen Undercutting of Protected Polymers

A method is presented to model atomic oxygen erosion of protected polymers in low Earth orbit (LEO). Undercutting of protected polymers by atomic oxygen occurs in LEO due to the presence of scratch, crack or pin-window defects in the protective coatings. As a means of providing a better understanding of undercutting processes, a fast method of modeling atomic-oxygen undercutting of protected polymers has been developed. Current simulation methods often rely on computationally expensive ray-tracing procedures to track the surface-to-surface movement of individual "atoms." The method introduced in this paper replaces slow individual particle approaches by substituting a model that utilizes both a geometric configuration-factor technique, which governs the diffuse transport of atoms between surfaces, and an efficient telescoping series algorithm, which rapidly integrates the cumulative effects stemming from the numerous atomic oxygen events occurring at the surfaces of an undercut cavity. This new method facilitates the systematic study of three-dimensional undercutting by allowing rapid simulations to be made over a wide range of erosion parameters.

Snyder, Aaron↗
NASA NTRS1984

Oxygen in GaAs - Direct and indirect effects

Oxygen has profound effects on the key electronic properties and point defects of GaAs crystals. Thus, when added in the growth system, it decreases the free electron concentration and enhances the concentration of deep donors in the resulting crystals. Both of these effects are highly beneficial for achieving semi-insulating material and have been utilized for that purpose. They have been attributed to the tendency of oxygen to getter silicon impurities during crystal growth. Only recently, it has been found that oxygen in GaAs introduces also a midgap level, ELO, with essentially the same activation energy as EL2 but with four times greater electron capture cross section. The present report reassesses the electrical and optical properties of the midgap levels in GaAs crystals grown by the horizontal Bridgman (HB) and the Czochralski-LEC techniques. Emphasis is placed on the identification of the specific effects of ELO.

Gatos, H. C.↗