High-efficiency microwave and millimeter-wave electro-optical modulation with whispering-gallery resonators
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microwave electro-optic modulation microspheres op↗
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Results for “optical modulation”
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Hybrid integrated optic modules for real-time signal processing
The most recent progress on four relatively new hybrid integrated optic device modules in LiNbO3 waveguides and one in YIG/GGG waveguide that are currently being studied are discussed. The five hybrid modules include a time-integrating acoustooptic correlator, a channel waveguide acoustooptic frequency shifter/modulator, an electrooptic channel waveguide total internal reflection moculator/switch, an electrooptic analog-to-digital converter using a Fabry-Perot modulator array, and a noncollinear magnetooptic modulator using magnetostatic surface waves. All of these devices possess the desirable characteristics of very large bandwidth (GHz or higher), very small substrate size along the optical path (typically 1.5 cm or less), single-mode optical propagation, and low drive power requirement. The devices utilize either acoustooptic, electrooptic or magnetooptic effects in planar or channel waveguides and, therefore, act as efficient interface devices between a light wave and temporal signals. Major areas of application lie in wideband multichannel optical real-time signal processing and communications. Some of the specific applications include spectral analysis and correlation of radio frequency (RF) signals, fiber-optic sensing, optical computing and multiport switching/routing, and analog-to-digital conversion of wide RF signals.
Tsai, C. S.↗
Electro-Optical Modulator Bias Control Using Bipolar Pulses
An improved method has been devised for controlling the DC bias applied to an electro-optical crystal that is part of a Mach-Zehnder modulator that generates low-duty-cycle optical pulses for a pulse-position modulation (PPM) optical data-communication system. In such a system, it is desirable to minimize the transmission of light during the intervals between pulses, and for this purpose, it is necessary to maximize the extinction ratio of the modulator (the ratio between the power transmitted during an "on" period and the power transmitted during an "off" period). The present method is related to prior dither error feedback methods, but unlike in those methods, there is no need for an auxiliary modulation subsystem to generate a dithering signal. Instead, as described below, dither is effected through alternation of the polarity of the modulation signal. The upper part of Figure 1 schematically depicts a Mach-Zehnder modulator. The signal applied to the electro-optical crystal consists of a radio-frequency modulating pulse signal, VRF, superimposed on a DC bias Vbias. Maximum extinction occurs during the off (VRF = 0) period if Vbias is set at a value that makes the two optical paths differ by an odd integer multiple of a half wavelength so that the beams traveling along the two paths interfere destructively at the output beam splitter. Assuming that the modulating pulse signal VRF has a rectangular waveform, maximum transmission occurs during the "on" period if the amplitude of VRF is set to a value, V , that shifts the length of the affected optical path by a half wavelength so that now the two beams interfere constructively at the output beam splitter. The modulating pulse signal is AC-coupled from an amplifier to the electro-optical crystal. Sometimes, two successive pulses occur so close in time that the operating point of the amplifier drifts, one result being that there is not enough time for the signal level to return to ground between pulses. Also, the difference between the optical-path lengths can drift with changes in temperature and other spurious effects. The effects of both types of drift are suppressed in the present method, in which one takes advantage of the fact that when Vbias is set at the value for maximum extinction, equal-magnitude positive and negative pulses applied to the electro-optical crystal produce equal output light pulses.
Farr, William↗
Tunable Electro-optic modulators for lidar systems and atmospheric applications
In global sensing applications using different types of lidars, the spectral range and fine frequency coverages are often limited because of the finite tunabilities of molecular lasers and the number of molecular species that are available. To overcome the above obstacle, we have proposed new broadband frequency tunable electro-optic (EO) modulators that can cover a wide range from the mid-infrared to the visible as lidar sources in atmospheric sensing applications such as high resolution atmospheric molecular spectroscopy, Differential Absorption Lidar (DIAL), and laser radar imaging. The configuration of the proposed new tunable EO modulators includes an electro-optic active crystal element surrounded by a ferrite tuning element which is placed inside a microwave waveguide. The tuning is provided by an external magnetic field, which is either longitudinal or transverse, and the modulator can be either single sideband type or a double sideband type depending on the application required for the spectral purity of the modulator output.
Eng, R. S.↗
Photovoltaic driven multiple quantum well optical modulator
Multiple quantum well (MQW) structures (12) are utilized to provide real-time, reliable, high-performance, optically-addressed spatial-light modulators (SLM) (10). The optically-addressed SLM comprises a vertical stack of quantum well layers (12a) within the penetration depth of an optical write signal 18, a plurality of space charge barriers (12b) having predetermined tunneling times by control of doping and thickness. The material comprising the quantum well layers has a lower bandgap than that of the space charge barrier layers. The write signal modulates a read signal (20). The modulation sensitivity of the device is high and no external voltage source is required. In a preferred embodiment, the SLM having interleaved doped semiconductor layers for driving the MQW photovoltaically is characterized by the use of a shift analogous to the Moss-Burnstein shift caused by the filling of two-dimensional states in the multiple quantum wells, thus allowing high modulation sensitivity in very narrow wells. Arrays (30) may be formed with a plurality of the modulators.
Maserjian, Joseph↗
Improved fabrication of scalable hybrid silicon nitride–thin-film lithium niobate electro-optic modulators
Strategies for improved fabrication of integrated thin-film lithium niobate electro-optic (EO) Mach–Zehnder modulators (MZMs) are reported using scalable processes and designs. The MZM devices utilize direct bonding of unetched and unpatterned thin-film lithium niobate to patterned and planarized silicon photonic microchips. The latter contains silicon nitride waveguide structures of various widths that are used to form hybrid modes that are suitable for high-bandwidth low-voltage EO modulators based on Pockels effect. We report that the incorporation of appropriately designed outgassing channels and certain modifications to key processing steps helped achieve a greater than 99% reduction in void density during bonding. Void reduction is critically important for these traveling-wave hybrid MZM devices in which the optical mode is controllably distributed between multiple thin layers and propagates over millimeter-scale lengths.
Mere, Viphretuo↗
A heterogeneously integrated silicon photonic/lithium niobate travelling wave electro-optic modulator
Silicon photonics is a platform that enables densely integrated photonic components and systems and integration with electronic circuits. Depletion mode modulators designed on this platform suffer from a fundamental frequency response limit due to the mobility of carriers in silicon. Lithium niobate-based modulators have demonstrated high performance, but the material is difficult to process and cannot be easily integrated with other photonic components and electronics. In this manuscript, we simultaneously take advantage of the benefits of silicon photonics and the Pockels effect in lithium niobate by heterogeneously integrating silicon photonic-integrated circuits with thin-film lithium niobate samples. We demonstrate the most CMOS-compatible thin-film lithium niobate modulator to date, which has electro-optic 3 dB bandwidths of 30.6 GHz and half-wave voltages of 6.7 V×cm. These modulators are fabricated entirely in CMOS facilities, with the exception of the bonding of a thin-film lithium niobate sample post fabrication, and require no etching of lithium niobate.
42 ENGINEERING↗
Commercial Production of Low-Loss Quantum Frequency Conversion and Electro-Optical Modulation Devices Enabled by Wafer-Level Processing of Reverse-Proton-Exchange Lithium Niobate Waveguides
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42 ENGINEERING↗
Silicon nitride stress-optic microresonator modulator for optical control applications
Modulation-based control and locking of lasers, filters and other photonic components is a ubiquitous function across many applications that span the visible to infrared (IR), including atomic, molecular and optical (AMO), quantum sciences, fiber communications, metrology, and microwave photonics. Today, modulators used to realize these control functions consist of high-power bulk-optic components for tuning, sideband modulation, and phase and frequency shifting, while providing low optical insertion loss and operation from DC to 10s of MHz. In order to reduce the size, weight and cost of these applications and improve their scalability and reliability, modulation control functions need to be implemented in a low loss, wafer-scale CMOS-compatible photonic integration platform. The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and optical frequency combs. Yet, progress towards implementing low loss, low power modulators in the silicon nitride platform, while maintaining wafer-scale process compatibility has been limited. Here we report a significant advance in integration of a piezo-electric (PZT, lead zirconate titanate) actuated micro-ring modulation in a fully-planar, wafer-scale silicon nitride platform, that maintains low optical loss (0.03 dB/cm in a 625 µm resonator) at 1550 nm, with an order of magnitude increase in bandwidth (DC - 15 MHz 3-dB and DC - 25 MHz 6-dB) and order of magnitude lower power consumption of 20 nW improvement over prior PZT modulators. The modulator provides a >14 dB extinction ratio (ER) and 7.1 million quality-factor (Q) over the entire 4 GHz tuning range, a tuning efficiency of 162 MHz/V, and delivers the linearity required for control applications with 65.1 dB·Hz 2/3 and 73.8 dB·Hz 2/3 third-order intermodulation distortion (IMD3) spurious free dynamic range (SFDR) at 1 MHz and 10 MHz respectively. We demonstrate two control applications, laser stabilization in a Pound-Drever Hall (PDH) lock loop, reducing laser frequency noise by 40 dB, and as a laser carrier tracking filter. This PZT modulator design can be extended to the visible in the ultra-low loss silicon nitride platform with minor waveguide design changes. This integration of PZT modulation in the ultra-low loss silicon nitride waveguide platform enables modulator control functions in a wide range of visible to IR applications such as atomic and molecular transition locking for cooling, trapping and probing, controllable optical frequency combs, low-power external cavity tunable lasers, quantum computers, sensors and communications, atomic clocks, and tunable ultra-low linewidth lasers and ultra-low phase noise microwave synthesizers.
Wang, Jiawei (ORCID:0000000257965220)↗
Investigation of a GaAlAs Mach-Zehnder electro-optic modulator
A GaAs modulator operating at 0.78 to 0.88 micron wavelength has the potential to be integrated with a GaAs/GaAlAs laser diode for an integrated fiber-optic transmitter. A travelling-wave Mach-Zehnder modulator using the electro-optic effect of GaAs and operating at a wavelength of 0.82 microns has been investigated for the first time. A four layer Strip-loaded ridge optical waveguide has been analyzed using the effective index method and single mode waveguides have been designed. The electro-optic effect of GaAs has also been analyzed and a modulator using the geometry producing the maximum phase shift has been designed. A coplanar transmission line structure is used in an effort to tap the potentially higher bandwidth of travelling-wave electrodes. The modulator bandwidth has been calculated at 11.95 GHz with a required drive power of 2.335 Watts for full intensity modulation. Finally, some preliminary experiments were performed to characterize a fabrication process for the modulator.
Materna, David M.↗
Method and apparatus of surface-incident, plasmon-enhanced multiple quantum well modulators and optical coupling thereon
An optical interconnect system has first and second waveguides each with wedge-shaped cross-section at a first end, disposed over an optical modulator. The optical modulator is a surface-plasmon multi quantum well (SP-MQW) modulator, the first waveguide an input waveguide and the second waveguide configured an output waveguide. In embodiments the SP-MQW modulator has multiple semiconductor layers disposed atop a lower metal layer between 10 and 300 nanometers thick and configured such that incident light is reflected at the lower metal layer unless a voltage is applied to the semiconductor layers, when incident light is coupled into a surface plasmon mode in the lower metal layer.
42 ENGINEERING↗
A focus spoiling retrodirective modulator
Optical modulator for satellite to ground or ground to ground laser communication link
COMMUNICATION SYSTEM↗
High-bandwidth CMOS-voltage-level electro-optic modulation of 780 nm light in thin-film lithium niobate
Integrated photonics operating at visible-near-infrared (VNIR) wavelengths offer scalable platforms for advancing optical systems for addressing atomic clocks, sensors, and quantum computers. The complexity of free-space control optics causes limited addressability of atoms and ions, and this remains an impediment on scalability and cost. Networks of Mach-Zehnder interferometers can overcome challenges in addressing atoms by providing high-bandwidth electro-optic control of multiple output beams. Here, we demonstrate a VNIR Mach-Zehnder interferometer on lithium niobate on sapphire with a CMOS voltage-level compatible full-swing voltage of 4.2 V and an electro-optic bandwidth of 2.7 GHz occupying only 0.35 mm 2 . Our waveguides exhibit 1.6 dB/cm propagation loss and our microring resonators have intrinsic quality factors of 4.4 × 10 5 . This specialized platform for VNIR integrated photonics can open new avenues for addressing large arrays of qubits with high precision and negligible cross-talk.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Broadband optical modulation and control at millikelvin temperatures
A universal experimental challenge in studying radiation effects on cryogenic devices is precisely and accurately characterizing the position-dependent device response near the energy detection threshold. Here, we have developed a compact cryogenic optical beam steering system that can be used to generate O (μs) pulses of small numbers of photons over the energy range of 1.3–3.4 eV at room temperature, and deliver those photons via fiber optic to any specified location on the surface of a detector operating at cryogenic temperatures. This new system will allow for robust calibration of any photon-sensitive detector, including superconducting devices. The system can be used efficiently to explore the physics of target materials, quantify the position sensitivity of different sensor designs, measure phonon transport, and study the effects of quasiparticle poisoning on detector operation. We describe the design of this pulsed calibration method and present first results obtained with a second-generation system operated at room temperature and sub-Kelvin temperatures.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Monolithic electro-optic modulator array
A PIN GaAlAs diode structure is provided with parameters for index guiding of light in a single mode. The index of refraction of the central layer I (which in practice may be lightly doped .pi. or .nu.) is greater than the p- and n-layers to create a slab waveguide in the transverse direction. Stripe contacts define separate waveguide channels that are separated electrically and optically by implanting protons or etching grooves between the stripe contacts in the upper layer. Separate reverse biasing voltages may be applied to the stripe contacts for modulation of the light in proportions to the voltage, either with absorption modulation, if the light wavelength is within about 500.ANG. of the bandgap of the .pi.-material, or phase-delay modulation, if the wavelength is separated from the bandgap of the .pi.-material by at least 900.ANG..
Robinson, Deborah L.↗
Extreme Universe Space Observatory (EUSO) Optics Module
A demonstration part will be manufactured in Japan on one of the large Toshiba machines with a diameter of 2.5 meters. This will be a flat PMMA disk that is cut between 0.5 and 1.25 meters radius. The cut should demonstrate manufacturing the most difficult parts of the 2.5 meter Fresnel pattern and the blazed grating on the diffractive surface. Optical simulations, validated with the subscale prototype, will be used to determine the limits on manufacturing errors (tolerances) that will result in optics that meet EUSO s requirements. There will be limits on surface roughness (or errors at high spatial frequency); radial and azimuthal slope errors (at lower spatial frequencies) and plunge cut depth errors in the blazed grating. The demonstration part will be measured to determine whether it was made within the allowable tolerances.
Young, Roy↗
Hyperfine spectroscopy using transverse modulated optical pumping
Population inversion is observed between the field-independent ground hyperfine states of Rb-87 when using an optical pumping technique which is applicable to a large number of species of atoms and ions. Inversion occurs upon a coherent transfer of angular momentum to the Rb-87 spin system from circularly polarized light propagating in a transverse direction to a magnetic field. Coherence is established by modulating, at certain frequencies, the light intensity or magnetic-field strength.
Hughes, W. M.↗