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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Microwave conductivity of laser ablated YBaCuO superconducting films and its relation to microstrip transmission line

The discovery of high temperature superconductor oxides has raised the possibility of a new class of millimeter and microwave devices operating at temperatures considerably higher than liquid helium temperatures. Therefore, materials properties such as conductivity, current density, and sheet resistance as a function of temperature and frequency, possible anisotropies, moisture absorption, thermal expansion, and others, have to be well characterized and understood. The millimeter wave response was studied of laser ablated YBa2Cu3O(7-x)/LaAlO3 thin films as a function of temperature and frequency. In particular, the evaluation of their microwave conductivity was emphasized, since knowledge of this parameter provides a basis for the derivation of other relevant properties of these superconducting oxides, and for using them in the fabrication of actual passive circuits. The microwave conductivity for these films was measured at frequencies from 26.5 to 40.0 GHz, in the temperature range from 20 to 300 K. The values of the conductivity are obtained from the millimeter wave power transmitted through the films, using a two fluid model.

Bhasin, K. B.↗
NASA NTRS1991

Microwave conductivity of laser ablated YBa2Cu3O(7-delta) superconducting films and its relation to microstrip transmission line performance

The discovery of high temperature superconductor oxides has raised the possibility of a new class of millimeter and microwave devices operating at temperatures considerably higher than liquid helium temperatures. Therefore, materials properties such as conductivity, current density, and sheet resistance as a function of temperature and frequency, possible anisotropies, moisture absorption, thermal expansion, and others, have to be well characterized and understood. The millimeter wave response of laser ablated YBa2Cu3O(7-delta)/LaAlO3 thin films was studied as a function of temperature and frequency. In particular, the evaluation of their microwave conductivity was emphasized, since knowledge of this parameter provides a basis for the derivation of other relevant properties of these superconducting oxides, and for using them in the fabrication of actual passive circuits. The microwave conductivity for these films was measured at frequencies from 26.5 to 40.0 GHz, in the temperature range from 20 to 300 K. The values of the conductivity are obtained from the millimeter wave power transmitted through the films, using a two fluid model.

Bhasin, K. B.↗
NASA NTRS2006

Cryogenic Pound Circuits for Cryogenic Sapphire Oscillators

Two modern cryogenic variants of the Pound circuit have been devised to increase the frequency stability of microwave oscillators that include cryogenic sapphire-filled cavity resonators. The original Pound circuit is a microwave frequency discriminator that provides feedback to stabilize a voltage-controlled microwave oscillator with respect to an associated cavity resonator. In the present cryogenic Pound circuits, the active microwave devices are implemented by use of state-of-the-art commercially available tunnel diodes that exhibit low flicker noise (required for high frequency stability) and function well at low temperatures and at frequencies up to several tens of gigahertz. While tunnel diodes are inherently operable as amplitude detectors and amplitude modulators, they cannot, by themselves, induce significant phase modulation. Therefore, each of the present cryogenic Pound circuits includes passive circuitry that transforms the AM into the required PM. Each circuit also contains an AM detector that is used to sample the microwave signal at the input terminal of the high-Q resonator for the purpose of verifying the desired AM null at this point. Finally, each circuit contains a Pound signal detector that puts out a signal, at the modulation frequency, having an amplitude proportional to the frequency error in the input signal. High frequency stability is obtained by processing this output signal into feedback to a voltage-controlled oscillator to continuously correct the frequency error in the input signal.

Dick, G. John↗
NASA NTRS2008

NASA Tech Briefs, January 2008

Topics covered include: Induction Charge Detector with Multiple Sensing Stages; Generic Helicopter-Based Testbed for Surface Terrain Imaging Sensors; Robot Electronics Architecture; Optimized Geometry for Superconducting Sensing Coils; Sensing a Changing Chemical Mixture Using an Electronic Nose; Inertial Orientation Trackers with Drift Compensation; Microstrip Yagi Antenna with Dual Aperture-Coupled Feed; Patterned Ferroelectric Films for Tunable Microwave Devices; Micron-Accurate Laser Fresnel-Diffraction Ranging System; Efficient G(sup 4)FET-Based Logic Circuits; Web-Enabled Optoelectronic Particle-Fallout Monitor; SiO2/TiO2 Composite for Removing Hg from Combustion Exhaust; Lightweight Tanks for Storing Liquefied Natural Gas; Hybrid Wound Filaments for Greater Resistance to Impacts; Making High-Tensile-Strength Amalgam Components; Bonding by Hydroxide-Catalyzed Hydration and Dehydration; Balanced Flow Meters without Moving Parts; Deflection-Compensating Beam for Use inside a Cylinder; Four-Point-Latching Microactuator; Curved Piezoelectric Actuators for Stretching Optical Fibers; Tunable Optical Assembly with Vibration Dampening; Passive Porous Treatment for Reducing Flap Side-Edge Noise; Cylindrical Piezoelectric Fiber Composite Actuators; Patterning of Indium Tin Oxide Films; Gimballed Shoulders for Friction Stir Welding; Improved Thermal Modulator for Gas Chromatography; Nuclear-Spin Gyroscope Based on an Atomic Co-Magnetometer; Utilizing Ion-Mobility Data to Estimate Molecular Masses; Optical Displacement Sensor for Sub-Hertz Applications; Polarization/Spatial Combining of Laser-Diode Pump Beams; Spatial Combining of Laser-Diode Beams for Pumping an NPRO; Algorithm Optimally Orders Forward-Chaining Inference Rules; Project Integration Architecture; High Power Amplifier and Power Supply; Estimating Mixing Heights Using Microwave Temperature Profiler; and Multiple-Cone Sunshade for a Spaceborne Telescope.

Source record↗
NASA NTRS1975

Electrical and electronic devices and components: A compilation

Components and techniques which may be useful in the electronics industry are described. Topics discussed include transducer technology, printed-circuit technology, solid state devices, MOS transistors, Gunn device, microwave antennas, and position indicators.

Source record↗
NASA NTRS1977

Low-cost dual-frequency microwave antenna

Antenna is circularly-polarized microwave device with high-band frequency and low-band frequency elements. Relatively low impedance of low-band frequency element can be matched to desired impedance by adding etched matching network.

Yu, I.↗
NASA NTRS1982

Conversion and matched filter approximations for serial minimum-shift keyed modulation

Serial minimum-shift keyed (MSK) modulation, a technique for generating and detecting MSK using series filtering, is ideally suited for high data rate applications provided the required conversion and matched filters can be closely approximated. Low-pass implementations of these filters as parallel inphase- and quadrature-mixer structures are characterized in this paper in terms of signal-to-noise ratio (SNR) degradation from ideal and envelope deviation. Several hardware implementation techniques utilizing microwave devices or lumped elements are presented. Optimization of parameter values results in realizations whose SNR degradation is less than 0.5 dB at error probabilities of .000001.

Ziemer, R. E.↗
NASA NTRS1990

The NASA high temperature superconductivity program

It has been recognized from the onset that high temperature superconductivity held great promise for major advances across a broad range of NASA interests. The current effort is organized around four key areas: communications and data, sensors and cryogenics, propulsion and power, and space materials technology. Recently, laser ablated YBa2Cu3O(7-x) films on LaAIO produced far superior RF characteristics when compared to metallic films on the same substrate. This achievement has enabled a number of unique microwave device applications, such as low insertion loss phase shifters and high Q filters. Melt texturing and melt quenched techniques are being used to produce bulk materials with optimized magnetic properties. These yttrium enriched materials possess enhanced flux pinning characteristics and will lead to prototype cryocooler bearings. Significant progress has also occurred in bolometer and current lead technology. Studies are being conducted to evaluate the effect of high temperature superconducting materials on the performance and life of high power magneto-plasma-dynamic thrusters. Extended studies were also performed to evaluate the benefit of superconducting magnetic energy storage for LEO space station, lunar and Mars mission applications. The project direction and level of effort of the program are also described.

Sokoloski, Martin M.↗
NASA NTRS1992

Growth And Patterning Of High-Tc Superconducting Films

Superconducting films of YBa(2)Cu(3)O(7-delta), having high superconducting-transition temperatures (Tc's), deposited on LaAlO3 substrates and etched into patterns representative of passive microwave devices, with no deterioration of superconducting properties.

Warner, J. D.↗
NASA NTRS1991

Prospects and progress of high Tc superconductivity for space applications

Current research in the area of high temperature superconductivity is organized around four key areas: communications and data, sensors and cryogenics, propulsion and power, and space materials technology. Recently, laser ablated YBa2Cu3O(7-x) films on LaAlO3 produced far superior RF characteristics when compared to metallic films on the same substrate. The achievement has enabled a number of unique microwave device applications, such as low insertion loss phase shifters and high-Q filters. Melt texturing and melt-quenched techniques are being used to produce bulk material with optimized magnetic properties. These yttrium-enriched materials possess enhanced flux pinning characteristics and could lead to prototype cryocooler bearings. Significant progress has also occurred in bolometer and current lead technology. Studies were conducted to evaluate the effect of high temperature superconducting materials on the performance and life of high power magnetoplasma-dynamic thrusters. Extended studies were also performed to evaluate the benefit of superconducting magnetic energy storage for LEO space station, lunar, and Mars mission applications.

Romanofsky, Robert R.↗
NASA NTRS1993

Measuring Microwave Conductivities Of Superconducting Films

Microwave conductivities of thin films of high-temperature superconductors like YBa(3)Cu(3)O(7-delta) measured by noninvasive, nondestructive microwave-power-transmission method. Measurements yield useful information on superconducting and normal states of films and contribute to evaluation of films for use in microwave devices.

Bhasin, K. B.↗
NASA NTRS1992

SITE project. Phase 1: Continuous data bit-error-rate testing

The Systems Integration, Test, and Evaluation (SITE) Project at NASA LeRC encompasses a number of research and technology areas of satellite communications systems. Phase 1 of this project established a complete satellite link simulator system. The evaluation of proof-of-concept microwave devices, radiofrequency (RF) and bit-error-rate (BER) testing of hardware, testing of remote airlinks, and other tests were performed as part of this first testing phase. This final report covers the test results produced in phase 1 of the SITE Project. The data presented include 20-GHz high-power-amplifier testing, 30-GHz low-noise-receiver testing, amplitude equalization, transponder baseline testing, switch matrix tests, and continuous-wave and modulated interference tests. The report also presents the methods used to measure the RF and BER performance of the complete system. Correlations of the RF and BER data are summarized to note the effects of the RF responses on the BER.

Fujikawa, Gene↗
NASA NTRS1993

Continued improvment of large area, in situ sputter deposition of superconducting YBCO thin films

The deposition of thin films of superconducting YBa2Cu3O7-x onto substrates of up to 3-in diameter by an integrated off-axis sputtering is reported. The substrate is located above the center of an 8-in-diameter YBCO planar target, and, in conjunction with a negative ion shield, negative ion effects are avoided. A large radiant heater provides backside, noncontact heating of the bare substrates. YBCO films have been grown on polished 1-cm2 MgO and LaAlO3 substrates with Tc = 90 K or greater, Jc = 2.5 x 10 exp 6 A/sq cm or greater at 77 K, and microwave surface resistance Rs less than 0.4 micro-ohm at 77 K and 10 GHz. The films have a very smooth surface morphology. Uniformity data for LaAlO3 substrates are less than +/-5 percent in Rs. Thickness uniformity results for 3-in substrates indicate less than 10 percent variation. The growth of epitaxial insulating films for use with YBCO films and application of the YBCO films in microwave devices are briefly discussed.

Truman, J. K.↗
NASA NTRS1998

Interaction between Convection and Heat Transfer in Crystal Growth

Crystals are integral components in some of our most sophisticated and rapidly developing industries. Single crystals are solids with the most uniform structures that can be obtained on an atomic scale. Because of their structural uniformity, crystals can transmit acoustic and electromagnetic waves and charged particles with essentially no scattering or interferences. This transparency, which can be selectively modified by controlled additions of impurities known as dopants, is the foundation of modern electronic industry. It has brought about widespread application of crystals in transistors, lasers, microwave devices, infrared detectors, magnetic memory devices, and many other magnets and electro-optic components. The performance of a crystal depends strongly on its compositional homogeneity. For instance, in modern microcircuitry, compositional variations of a few percent (down to a submicron length scale) can seriously jeopardize predicted yields. Since crystals are grown by carefully controlled phase transformations, the compositional adjustment in the solid is often made during growth from the nutrient. Hence, a detailed understanding of mass transfer in the nutrient is essential. Moreover, since mass transfer is often the slowest process during growth, it is usually the rate limiting mechanism. Crystal growth processes are usually classified according to the nature of the parent phase. Nevertheless, whether the growth occurs by solidification from a melt (melt growth), nucleation from a solution (solution growth), condensation from a vapor (physical vapor transport) or chemical reaction of gases (chemical vapor deposition), the parent phase is a fluid. As is with most non-equilibrium processes involving fluids, liquid or vapor, fluid motion plays an important role, affecting both the concentration and temperature gradients at the soli-liquid interface.

Source record↗
NASA NTRS1999

High Power Intermodulation Measurements up to 30 W of High Temperature Superconducting Filters

We have demonstrated a high power intermodulation measurement set-up capable of delivering 30 W in each of two fundamental tones. For closely spaced frequencies (less than 35 MHz), the dynamic range of the measurement is limited by the nonlinear performance of the mixer in the front end of the HP71210C spectrum analyzer. A tunable TE(sub 011) mode copper cavity was fabricated in which one of the endwalls could be adjusted shifting its resonant frequency between 5.7 and 6.6 GHz. Since the Q-value of this cavity is high, greater than 10(exp 4), and its bandwidth is small, less than 1 MHz, it can be used to attenuate the two fundamental tones relative to one of the harmonic tones, which greatly enhances the dynamic range of the measurement. This set-up can be used to measure the two-tone intermodulation distortion of any passive microwave device, e.g. a HTS filter, a connector, a cable, etc., over a frequency range of 5.9 to 6.4 GHz and a power range of 0.1 to 30 W. The third order intercept (TOI) of a prototype HTS filter measured at powers up to 30 W was +81.3 dBm.

Wilker, Charles↗
NASA NTRS2000

Current Status of Thin Film (Ba,Sr)TiO3 Tunable Microwave Components for RF Communications

The performance of proof-of-concept ferroelectric microwave devices has been moving steadily closer to the level needed for satellite and other rf communications applications. This paper will review recent progress at NASA Glenn in developing thin film Ba(x)Sr(1-x)TiO3 tunable micro-wave components for these applications. Phase shifters for phased array antennas, tunable filters and tunable oscillators employing microstrip and coupled microstrip configurations will be presented. Tunabilities, maximum dielectric constants, and phase shifter parameters will be discussed (e.g., coupled microstrip phase shifters with phase shift over 200 deg at 18 GHz and a figure of merit of 74.3 deg/dB). Issues of post-annealing, Mn-doping and Ba(x)Sr(1-x) TiO3 growth on sapphire and alumina substrates will be covered. The challenges of incorporating these devices into larger systems, such as yield, variability in phase shift and insertion loss, and protective coatings will also be addressed.

VanKeuls, F. W.↗
NASA NTRS2003

Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

Freeman, Jon C.↗
NASA NTRS2004

Channel Temperature Model for Microwave AlGaN/GaN HEMTs on SiC and Sapphire MMICs in High Power, High Efficiency SSPAs

A key parameter in the design trade-offs made during AlGaN/GaN HEMTs development for microwave power amplifiers is the channel temperature. An accurate determination can, in general, only be found using detailed software; however, a quick estimate is always helpful, as it speeds up the design cycle. This paper gives a simple technique to estimate the channel temperature of a generic microwave AlGaN/GaN HEMT on SiC or Sapphire, while incorporating the temperature dependence of the thermal conductivity. The procedure is validated by comparing its predictions with the experimentally measured temperatures in microwave devices presented in three recently published articles. The model predicts the temperature to within 5 to 10 percent of the true average channel temperature. The calculation strategy is extended to determine device temperature in power combining MMICs for solid-state power amplifiers (SSPAs).

Freeman, Jon C.↗