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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Upgraded Near-Field Antenna-Testing System

Upgraded system for near-field testing of large microwave antenna built around commercial automated network analyzer (HP8510) designed for measurement and characterization of microwave circuits and components. Contains highly capable microwave receiver also suitable for far-field and radar-cross-section measurements. Receiver operates in fast-data-acquisition mode at rate of one new data point every millisecond without averaging. Also operates with greater sensitivity by use of averaging feature at time penalty of 0.2 ms per average. Time-domain option added to analyzer enables it to perform time-domain reflectometry.

Kunath, Richard R.↗
NASA NTRS1994

Constant-Delay Broadband Microwave Phase Modulator

Varactor diodes and transformer waveguide sections used instead of tuned circuits. Microwave phase modulator exhibits approximately flat delay-vs.-frequency response in frequency band of interest, according to design computations.

Francisco, Mark↗
NASA NTRS1989

Sequentially evaporated thin Y-Ba-Co-O superconducting films on microwave substrates

The development of high T sub c superconducting thin films on various microwave substrates is of major interest in space electronic systems. Thin films of YBa2Cu3O(7-Delta) were formed on SrTiO3, MgO, ZrO2 coated Al2O3, and LaAlO3 substrates by multi-layer sequential evaporation and subsequent annealing in oxygen. The technique allows controlled deposition of Cu, BaF2 and Y layers, as well as the ZrO buffer layers, to achieve reproducibility for microwave circuit fabrication. The three layer structure of Cu/BaF2/Y is repeated a minimum of four times. The films were annealed in an ambient of oxygen bubbled through water at temperatures between 850 C and 900 C followed by slow cooling (-2 C/minute) to 450 C, a low temperature anneal, and slow cooling to room temperature. Annealing times ranged from 15 minutes to 5 hrs. at high temperature and 0 to 6 hr. at 450 C. Silver contacts for four probe electrical measurements were formed by evaporation followed with an anneal at 500 C. The films were characterized by resistance-temperature measurements, energy dispersive X-ray spectroscopy, X-ray diffraction, and scanning electron microscopy. Critical transition temperatures ranged from 30 K to 87 K as a function of the substrate, composition of the film, thicknesses of the layers, and annealing conditions. Microwave ring resonator circuits were also patterned on these MgO and LaAlO3 substrates.

Valco, G. J.↗
NASA NTRS2004

Measured Attenuation of Coplanar Waveguide on 6H, p-type SiC and High Purity Semi-Insulating 4H SiC through 800 K

Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and jet engine performance monitoring require circuits built on wide bandgap semiconductors. In this paper, the characteristics of microwave transmission lines on 4H-High Purity Semi-Insulating SiC and 6H, p-type SiC is presented as a function of temperature and frequency. It is shown that the attenuation of 6H, p-type substrates is too high for microwave circuits, large leakage current will flow through the substrate, and that unusual attenuation characteristics are due to trapping in the SiC. The 4H-HPSI SiC is shown to have low attenuation and leakage currents over the entire temperature range.

Ponchak, George E.↗
NASA NTRS1993

A 26 to 220 GHz harmonic mixer-receiver

A wideband mm-wave harmonic mixer-receiver has been developed using a wideband integrated-circuit antenna, a back-to-back Schottky-barrier diode chip and microwave circuit design. The design is planar, simple to build and yields excellent performance from 26 to 180 GHz. Application areas include wideband early warning systems, wideband search and rescue systems and the extension of spectrum analyzer and power meter range to the mm-wave region.

Kormanyos, Brian K.↗
NASA NTRS1995

Performance of an artificial absorber for truncating FEM meshes

We investigate the effectiveness of an artificial absorber for truncating finite element (FE) meshes. Specifically, we present the implementation of a novel mesh truncation approach using a perfectly matched anisotropic absorber for waveguides and stripline circuits. This truncation scheme is useful in many applications, including antennas, scattering, and microwave circuits.

Gong, Jian↗
NASA NTRS1987

Optically controlled microwave devices and circuits: Emerging applications in space communications systems

Optical control of microwave devices and circuits by an optical fiber has the potential to simplify signal distribution networks in high frequency communications systems. The optical response of two terminal and three terminal (GaAs MESFET, HEMT, PBT) microwave devices are compared and several schemes for controlling such devices by modulated optical signals examined. Monolithic integration of optical and microwave functions on a single semiconductor substrate is considered to provide low power, low loss, and reliable digital and analog optical links for signal distribution.

Bhasin, Kul B.↗
NASA NTRS1994

Coaxial microwave electrothermal thruster performance in hydrogen

The microwave electro thermal thruster (MET) is an electric propulsion concept that offers the promise of high performance combined with a long lifetime. A unique feature of this electric propulsion concept is its ability to create a microwave plasma discharge separated or floating away from any electrodes or enclosing walls. This allows propellant temperatures that are higher than those in resistojets and reduces electrode and wall erosion. It has been demonstrated that microwave energy is coupled into discharges very efficiently at high input power levels. As a result of these advantages, the MET concept has been identified as a future high power electric propulsion possibility. Recently, two additional improvements have been made to the coaxial MET. The first was concerned with improving the microwave matching. Previous experiments were conducted with 10-30 percent reflected power when incident power was in excess of 600 W(exp 6). Power was reflected back to the generator because the impedance of the MET did not match the 50 ohm impedance of the microwave circuit. To solve this problem, a double stub tuning system has been inserted between the MET and the microwave power supply. The addition of the double stub tuners reduces the reflected power below 1 percent. The other improvement has prepared the coaxial MET for hydrogen experiments. To operate with hydrogen, the vacuum window which separates the coaxial line from the discharge chamber has been changed from teflon to boron nitride. All the microwave energy delivered to the plasma discharge passes through this vacuum window. This material change had caused problems in the past because of the increased microwave reflection coefficients associated with the electrical properties of boron nitride. However, by making the boron nitride window electrically one-half of a wavelength long, power reflection in the window has been eliminated. This technical note summarizes the experimental performance of the improved coaxial MET when operating in nitrogen, helium, and hydrogen gases.

Richardson, W.↗
NASA NTRS1972

Investigation of the use of microwave image line integrated circuits for use in radiometers and other microwave devices in X-band and above

Program results are described in which the use of a/high permittivity rectangular dielectric image waveguide has been investigated for use in microwave and millimeter wavelength circuits. Launchers from rectangular metal waveguide to image waveguide are described. Theoretical and experimental evaluations of the radiation from curved image waveguides are given. Measurements of attenuation due to conductor and dielectric losses, adhesives, and gaps between the dielectric waveguide and the image plane are included. Various passive components are described and evaluations given. Investigations of various techniques for fabrication of image waveguide circuits using ceramic waveguides are also presented. Program results support the evaluation of the image line approach as an advantageous method for realizing low loss integrated electronic circuits for X-band and above.

Knox, R. M.↗
NASA NTRS1995

Layout Of Antennas And Cables In A Large Array

Layout devised to minimize total land area occupied by large phased array of antennas and to minimize total length of cables in array. In original intended application, array expanded version of array of paraboloidal-dish microwave communication antennas of Deep Space Network. Layout also advantageous for other phased arrays of antennas and antenna elements, including notably printed-circuit microwave antenna arrays.

Logan, Ronald T., Jr.↗
NASA NTRS1982

A study of microwave downcoverters operating in the K sub u band

A computer program for parametric amplifier design is developed with special emphasis on practical design considerations for microwave integrated circuit degenerate amplifiers. Precision measurement techniques are developed to obtain a more realistic varactor equivalent circuit. The existing theory of a parametric amplifier is modified to include the equivalent circuit, and microwave properties, such as loss characteristics and circuit discontinuities are investigated.

Fellers, R. G.↗
NASA NTRS2005

High-Power, High-Temperature Superconductor Technology Development

Since the first discovery of high-temperature superconductors (HTS) 10 years ago, the most promising areas for their applications in microwave systems have been as passive components for communication systems. Soon after the discovery, experiments showed that passive microwave circuits made from HTS material exceeded the performance of conventional devices for low-power applications and could be 10 times as small or smaller. However, for superconducting microwave components, high-power microwave applications have remained elusive until now. In 1996, DuPont and Com Dev Ltd. developed high-power superconducting materials and components for communication applications under a NASA Lewis Research Center cooperative agreement, NCC3-344 "High Power High Temperature Superconductor (HTS) Technology Development." The agreement was cost shared between the Defense Advanced Research Projects Agency's (DARPA) Technology Reinvestment Program Office and the two industrial partners. It has the following objectives: 1) Material development and characterization for high-power HTS applications; 2) Development and validation of generic high-power microwave components; 3) Development of a proof-of-concept model for a high-power six-channel HTS output multiplexer.

Bhasin, Kul B.↗
NASA NTRS1993

Microwave characterization of slotline on high resistivity silicon for antenna feed network

Conventional silicon wafers have low resistivity and consequently unacceptably high value of dielectric attenuation constant. Microwave circuits for phased array antenna systems fabricated on these wafers therefore have low efficiency. By choosing a silicon substrate with sufficiently high resistivity it is possible to make the dielectric attenuation constant of the interconnecting microwave transmission lines approach those of GaAs or InP. In order for this to be possible, the transmission lines must be characterized. In this presentation, the effective dielectric constant (epsilon sub eff) and attenuation constant (alpha) of a slotline on high resistivity (5000 to 10 000 ohm-cm) silicon wafer will be discussed. The epsilon sub eff and alpha are determined from the measured resonant frequencies and the corresponding insertion loss of a slotline ring resonator. The results for slotline will be compared with microstrip line and coplanar waveguide.

Simons, Rainee N.↗
NASA NTRS1990

Emerging applications of high temperature superconductors for space communications

Proposed space missions require longevity of communications system components, high input power levels, and high speed digital logic devices. The complexity of these missions calls for a high data bandwidth capacity. Incorporation of high temperature superconducting (HTS) thin films into some of these communications system components may provide a means of meeting these requirements. Space applications of superconducting technology has previously been limited by the requirement of cooling to near liquid helium temperatures. Development of HTS materials with transition temperatures above 77 K along with the natural cooling ability of space suggest that space applications may lead the way in the applications of high temperature superconductivity. In order for HTS materials to be incorporated into microwave and millimeter wave devices, the material properties such as electrical conductivity, current density, surface resistivity and others as a function of temperature and frequency must be well characterized and understood. The millimeter wave conductivity and surface resistivity were well characterized, and at 77 K are better than copper. Basic microwave circuits such as ring resonators were used to determine transmission line losses. Higher Q values than those of gold resonator circuits were observed below the transition temperature. Several key HTS circuits including filters, oscillators, phase shifters and phased array antenna feeds are feasible in the near future. For technology to improve further, good quality, large area films must be reproducibly grown on low dielectric constant, low loss microwave substrates.

Heinen, Vernon O.↗
NASA NTRS1983

GaAs microwave devices and circuits with submicron electron-beam defined features

This paper describes the fabrication and application of GaAs FET's, both as discrete microwave devices and as the key active components in monolithic microwave integrated circuits. The performance of these devices and circuits is discussed for frequencies ranging from 3 to 25 GHz. The crucial fabrication step is the formation of the submicron gate by electron-beam lithography.

Wisseman, W. R.↗
NASA NTRS1996

Characterization of Hybrid Ferroelectric/HTS Thin Films for Tunable Microwave Components

Since the discovery of High-Temperature-Superconductors (HTS) in 1986, a diversity of HTS-based microwave components has been demonstrated. Because of their low conductor losses, HTS-based components are very attractive for integration into microwave circuits for space communication systems. Recent advancements have made deposition of ferroelectric thin films onto HTS thin films possible. Due to the sensitivity of the ferroelectric's dielectric constant (epsilon(sub r)) to an externally applied electric field (E), ferroelectric/superconducting structures could be used in the fabrication of low loss, tunable microwave components. In this paper, we report on our study of Ba(0.5)Sr(0.5)TiO3/YBa2Cu3O(7-delta) and Ba(0.08)Sr(0.92)TiO3/YBa2Cu3O(7-delta) ferroelectric/superconducting thin films on lanthanum aluminate (LaAlO3) substrates. For the (Ba:Sr, 0.50:0.50) epitaxial sample, a epsilon(sub r) of 425 and a loss tangent (tan delta) of 0.040 were measured at 298 K, 1.0 MHz, and zero applied E. For the same sample, a epsilon(sub r) of 360 and tan delta of 0.036 were obtained at 77 K, 1.0 MHz, and zero applied E. Variations in epsilon(sub r) from 180 to 360 were observed over an applied E range of 0V/cm less than or equal to E less than or equal to 5.62 x 10(exp 4) V/cm with little change in tan delta. However, the range of epsilon(sub r) variation for the polycrystalline (Ba:Sr, 0.08:0.92) sample over 0V/cm less than or equal to E less than or equal to 4.00 x 10(exp 4) V/cm was only 3.6 percent while tan delta increased markedly. These results indicate that a lack of epitaxy between the ferroelectric and superconducting layers decreases tuning and increases microwave losses.

Winters, M. D.↗
NASA NTRS1990

Complex permittivity of lanthanum aluminate in the 20 to 300 K temperature range from 26.5 to 40.0 GHz

Dielectric constants of microwave substrates are required in the design of superconducting microwave circuits at various temperatures. In this paper, the results are reported of a study of the complex permittivity of the newly developed lanthanum aluminate (LaAlO3) substrate, in the 20 to 300 K temperature range at frequencies from 26.5 to 40.0 GHz. The value of the complex permittivity was obtained by measuring the sample scattering parameters using a microwave waveguide technique. It is observed that, while the dielectric constant did not change appreciably with frequency, its value decreased by approximately 14 percent from room temperature to 20 K.

Miranda, F. A.↗