Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “memory”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Determining the memory kernel from a fixed point measurement data for a parabolic equation with memory effect

We consider an inverse problem for a parabolic equation with memory effect. This inverse problem aims to identify the memory kernel function from a fixed point measurement data. Based on the fixed point arguments, we derive the global in time existence and uniqueness of our inverse problem. Moreover, we present a numerical algorithm to reconstruct the memory kernel function. Numerical simulations show the effectiveness of the proposed method.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2019

Low-Voltage, CMOS-Free Synaptic Memory Based on Li X TiO 2 Redox Transistors

Neuromorphic computers based on analogue neural networks aim to substantially lower computing power by reducing the need to shuttle data between memory and logic units. Artificial synapses containing nonvolatile analogue conductance states enable direct computation using memory elements; however, most nonvolatile analogue memories require high write voltages and large current densities and are accompanied by nonlinear and unpredictable weight updates. Here, we develop an inorganic redox transistor based on electrochemical lithium-ion insertion into Li X TiO 2 that displays linear weight updates at both low current densities and low write voltages. The write voltage, as low as 200 mV at room temperature, is achieved by minimizing the open-circuit voltage and using a low-voltage diffusive memristor selector. We further show that the Li X TiO 2 redox transistor can achieve an extremely sharp transistor subthreshold slope of just 40 mV/decade when operating in an electrochemically driven phase transformation regime.

42 ENGINEERING↗
DOE OSTI2019

Nanoscale self-healing mechanisms in shape memory ceramics

Abstract Shape memory ceramics, such as yttria-stabilized tetragonal zirconia (YSTZ), offer unique properties including ultra-high operating temperatures and high resistance to oxidation. However, they are susceptible to formation of defects during manufacturing and/or by mechanical deformation. To completely take advantage of their shape memory properties, it is necessary to fully understand the nano-structural evolution of defects under external stimuli. In this study, defect evolution behaviors in YSTZ nanopillars are investigated by atomistic simulations. Two characteristic orientations of $$\left[ {01\bar 1} \right]$$ 01 1 ¯ and [001] are selected to represent the dominant deformation mechanisms of phase transformation and dislocation migration, respectively. Volume expansion associated with the tetragonal to monoclinic phase transformation is observed to promote healing of crack and void. Atom stress analyses reveal stress concentrations along the newly formed monoclinic phase bands. A critical crack width is identified, less than which the crack can be fully closed in compression. For [001]-oriented YSTZ nanopillars, dislocation migration leads to formations of an amorphous phase, which also assist the crack and void closure process. The revealed crack/void healing mechanisms may provide a path for mitigating internal defects that influences the mechanical properties and deformation mechanisms of shape memory ceramics.

Zhang, Ning (ORCID:0000000240661837)↗
NASA NTRS1972

Optical memory development. Volume 1: prototype memory system

The design, development, and implementation of a prototype, partially populated, million bit read-write holographic memory system using state-of-the-art components are described. The system employs an argon ion laser, acoustooptic beam deflectors, a holographic beam splitter (hololens), a nematic liquid crystal page composer, a photoconductor-thermoplastic erasable storage medium, a silicon P-I-N photodiode array, with lenses and electronics of both conventional and custom design. Operation of the prototype memory system was successfully demonstrated. Careful attention is given to the analysis from which the design criteria were developed. Specifications for the major components are listed, along with the details of their construction and performance. The primary conclusion resulting from this program is that the basic principles of read-write holographic memory system are well understood and are reducible to practice.

Cosentino, L. S.↗
NASA NTRS1993

A ground-based memory state tracker for satellite on-board computer memory

The TOPEX/POSEIDON satellite, currently in Earth orbit, will use radar altimetry to measure sea surface height over 90 percent of the world's ice-free oceans. In combination with a precise determination of the spacecraft orbit, the altimetry data will provide maps of ocean topography, which will be used to calculate the speed and direction of ocean currents worldwide. NASA's Jet Propulsion Laboratory (JPL) has primary responsibility for mission operations for TOPEX/POSEIDON. Software applications have been developed to automate mission operations tasks. This paper describes one of these applications, the Memory State Tracker, which allows the ground analyst to examine and track the contents of satellite on-board computer memory quickly and efficiently, in a human-readable format, without having to receive the data directly from the spacecraft. This process is accomplished by maintaining a groundbased mirror-image of spacecraft On-board Computer memory.

Quan, Alan↗
NASA NTRS2002

Performance Evaluation of Remote Memory Access (RMA) Programming on Shared Memory Parallel Computers

The purpose of this study is to evaluate the feasibility of remote memory access (RMA) programming on shared memory parallel computers. We discuss different RMA based implementations of selected CFD application benchmark kernels and compare them to corresponding message passing based codes. For the message-passing implementation we use MPI point-to-point and global communication routines. For the RMA based approach we consider two different libraries supporting this programming model. One is a shared memory parallelization library (SMPlib) developed at NASA Ames, the other is the MPI-2 extensions to the MPI Standard. We give timing comparisons for the different implementation strategies and discuss the performance.

Jin, Hao-Qiang↗
NASA NTRS2010

Memories and NASA Spacecraft: A Description of Memories, Radiation Failure Modes, and System Design Considerations

As NASA has evolved it's usage of spaceflight computing, memory applications have followed as well. In this slide presentation, the history of NASA's memories from magnetic core and tape recorders to current semiconductor approaches is discussed. There is a brief description of current functional memory usage in NASA space systems followed by a description of potential radiation-induced failure modes along with considerations for reliable system design.

LaBel, Kenneth A.↗
NASA NTRS2010

Improvement in the Shape Memory Response of Ti50.5Ni24.5Pd25 High-Temperature Shape Memory Alloy with Scandium Microalloying

A Ti(50.5)Ni(24.5)Pd25 high-temperature shape memory alloy (HTSMA) is microalloyed with 0.5 at. pct scandium (Sc) to enhance its shape-memory characteristics, in particular, dimensional stability under repeated thermomechanical cycles. For both Ti(50.5)Ni(24.5)Pd25 and the Sc-alloyed material, differential scanning calorimetry is conducted for multiple cycles to characterize cyclic stability of the transformation temperatures. The microstructure is evaluated using electron microscopy, X-ray diffractometry, and wavelength dispersive spectroscopy. Isobaric thermal cycling experiments are used to determine transformation temperatures, dimensional stability, and work output as a function of stress. The Sc-doped alloy displays more stable shape memory response with smaller irrecoverable strain and narrower thermal hysteresis than the baseline ternary alloy. This improvement in performance is attributed to the solid solution hardening effect of Sc.

Atli, K. C.↗
NASA NTRS2011

Shape Memory Characteristics of Ti(sub 49.5)Ni(sub 25)Pd(sub 25)Sc(sub 0.5) High-Temperature Shape Memory Alloy After Severe Plastic Deformation

A Ti(49.5)Ni25Pd25Sc(0.5) high-temperature shape memory alloy is thermomechanically processed to obtain enhanced shape-memory characteristics: in particular, dimensional stability upon repeated thermal cycles under constant loads. This is accomplished using severe plastic deformation via equal channel angular extrusion (ECAE) and post-processing annealing heat treatments. The results of the thermomechanical experiments reveal that the processed materials display enhanced shape memory response, exhibiting higher recoverable transformation and reduced irrecoverable strain levels upon thermal cycling compared with the unprocessed material. This improvement is attributed to the increased strength and resistance of the material against defect generation upon phase transformation as a result of the microstructural refinement due to the ECAE process, as supported by the electron microscopy observations.

Atli, K. C.↗
DOE OSTI2022

Memory row recording for mitigating crosstalk in dynamic random access memory

A method includes adding a set of one or more victim rows to a first probabilistic filter and to a second probabilistic filter, in response to a memory access request, identifying a candidate victim row adjacent to a memory address specified by a memory access request, identifying the candidate victim row as a victim row in the set of victim rows based on performing a lookup of the candidate victim row in a selected filter, where the selected filter includes one of the first probabilistic filter and the second probabilistic filter, in response to identifying the candidate row as the victim row, enabling a row hammering countermeasure, clearing the first probabilistic filter in each of a first set of time periods, and clearing the second probabilistic filter in each of a second set of time periods interleaved with the first set of time periods.

SeyedzadehDelcheh, SeyedMohammad↗
DOE OSTI2015

Stress transfer during different deformation stages in a nano-precipitate-strengthened Ni-Ti shape memory alloy

Understanding the role of fine coherent precipitates in the micromechanical behavior of precipitate-strengthened shape memory alloys (SMAs), which still remains a mystery heretofore, is of crucial importance to the design of advanced SMAs with optimal functional and mechanical properties. Here, we investigate the lattice strain evolution of, and the stress partition between the nanoscale Ni{sub 4}Ti{sub 3} precipitates and the matrix in a precipitate-strengthened Ni-Ti SMA during different deformation stages by in-situ synchrotron high-energy X-ray diffraction technique. We found that, during R-phase reorientation and stress-induced martensitic transformation, which both involve the shear deformation process, the lattice strain of the nanoscale precipitates drastically increases by a magnitude of 0.5%, which corresponds to an abrupt increase of ∼520 MPa in internal stress. This indicates that stress repartition occurs and most of the stress is transferred to the precipitates during the shear deformation of the matrix. It is further revealed that the nanoscale precipitates which only have a low volume fraction bear a considerable amount of applied stress during all deformation stages investigated, implying that the nanoscale precipitates play an important role in the deformation behavior of the precipitate-strengthened Ni-Ti SMAs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

A Two-Way Shape Memory Study on Ni-Rich NiTi Shape Memory Alloy by Combination of the All-Round Treatment and the R-Phase Transformation

Ni{sub 4}Ti{sub 3} precipitates are formed in Ni-rich NiTi shape memory alloys (SMAs) after a certain heat treatment. Such a treatment then results in the changed phase transformation behavior of the alloy switching from the one-step reversible phase change B2 ↔ B19′ to the two-step, B2 ↔ R ↔ B19′, phase change. The present study reports a two-way shape memory (TWSM) due to an all-round treatment followed by an R-phase constraint aging at room temperature. The enhanced TWSM behavior was observed upon temperature cycling between 273 K (R-phase) and 77 K (B19′ phase). The effect of various constraint strains in R-phase aging by employing different diameters of the constraint ring was studied. However, the TWSM effect due to constraining the R-phase will be eliminated after a temperature rise of specimen to the fully parent phase (373 K).

36 MATERIALS SCIENCE↗
DOE OSTI2018

Characterization of the microstructures and the shape memory properties of the Fe-Mn-Si-Cr-Ni-C shape memory alloy after severe plastic deformation by differential speed rolling and subsequent annealing

Highlights: • The Fe-SMA was subjected to severe plastic deformation and then annealed. • Recovery strain increased with increasing grain size. • An optimum grain size existed for the largest recovery stress. • Grain reduction is useful for having a high recovery stress. - Abstract: The Fe-13.51Mn-4.82Si-8.32Cr-3.49Ni-0.15C shape memory alloy was subjected to severe plastic deformation by high-ratio differential speed rolling and subsequent annealing (between 873 and 1373 K) to find the factors that affect recovery stress and recovery strain. As the annealing temperature increased (i. e., as grain size increased), the recovery strain increased. This was attributed to decrease in the density of grain boundaries and the density of twins with increasing grain size. The recovery stress, however, showed a different behavior. It increased with annealing temperature up to 973 K, at which an ultrafine grain size near 1.6 μm was obtained, and then decreased with further increase in the temperature. The difference between the recovery strain and the plastic strain induced by recovery stress under constrained displacement during cooling was proposed to determine the amount of recovery stress. There was an optimum grain size for the largest difference between the recovery strain and the plastic strain. The current study shows that grain-size reduction is not good for having a high recovery strain but it is beneficial for having a high recovery stress in the Fe-Mn-Si shape memory alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Implementation of Parallel Dynamic Simulation on Shared-Memory vs. Distributed-Memory Environments

Power system dynamic simulation computes the system response to a sequence of large disturbance, such as sudden changes in generation or load, or a network short circuit followed by protective branch switching operation. It consists of a large set of differential and algebraic equations, which is computational intensive and challenging to solve using single-processor based dynamic simulation solution. High-performance computing (HPC) based parallel computing is a very promising technology to speed up the computation and facilitate the simulation process. This paper presents two different parallel implementations of power grid dynamic simulation using Open Multi-processing (OpenMP) on shared-memory platform, and Message Passing Interface (MPI) on distributed-memory clusters, respectively. The difference of the parallel simulation algorithms and architectures of the two HPC technologies are illustrated, and their performances for running parallel dynamic simulation are compared and demonstrated.

dynamic simulation↗
DOE OSTI2015

Memory operation mechanism of fullerene-containing polymer memory

The memory operation mechanism in fullerene-containing nanocomposite gate insulators was investigated while varying the kind of fullerene in a polymer gate insulator. It was cleared what kind of traps and which positions in the nanocomposite the injected electrons or holes are stored in. The reason for the difference in the easiness of programming was clarified taking the role of the charging energy of an injected electron into account. The dependence of the carrier dynamics on the kind of fullerene molecule was investigated. A nonuniform distribution of injected carriers occurred after application of a large magnitude programming voltage due to the width distribution of the polystyrene barrier between adjacent fullerene molecules. Through the investigations, we demonstrated a nanocomposite gate with fullerene molecules having excellent retention characteristics and a programming capability. This will lead to the realization of practical organic memories with fullerene-containing polymer nanocomposites.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Direct in situ measurement of coupled magnetostructural evolution in a ferromagnetic shape memory alloy and its theoretical modeling

Ferromagnetic shape memory alloys (FSMAs) have shown great potential as active components in next generation smart devices due to their exceptionally large magnetic-field-induced strains and fast response times. During application of magnetic fields in FSMAs, as is common in several magnetoelastic smart materials, there occurs simultaneous rotation of magnetic moments and reorientation of twin variants, resolving which, although critical for design of new materials and devices, has been difficult to achieve quantitatively with current characterization methods. At the same time, theoretical modeling of these phenomena also faced limitations due to uncertainties in values of physical properties such as magnetocrystalline anisotropy energy (MCA), especially for off-stoichiometric FSMA compositions. Here, in situ polarized neutron diffraction is used to measure directly the extents of both magnetic moments rotation and crystallographic twin-reorientation in an FSMA single crystal during the application of magnetic fields. Additionally, high-resolution neutron scattering measurements and first-principles calculations based on fully relativistic density functional theory are used to determine accurately the MCA for the compositionally disordered alloy of Ni 2 Mn 1.14 Ga 0.86 . The results from these state-of-the-art experiments and calculations are self-consistently described within a phenomenological framework, which provides quantitative insights into the energetics of magnetostructural coupling in FSMAs. Furthermore, based on the current model, the energy for magnetoelastic twin boundaries propagation for the studied alloy is estimated to be ~150 kJ/m 3 .

36 MATERIALS SCIENCE↗