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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Low-Voltage Protection For Volatile Computer Memories

Short-circuit current provides minimum memory power. Protective circuit includes dc-to-dc converter that supplies keep-alive voltage to memories when short circuit occurs in any of system loads. Converter powered by lowvoltage across two of three series diodes generated by short-circuit bus current. Relay switch is in open (short-circuit-detected) position. Protective circuit useful wherever necessary to improve reliability of volatile memories or other circuits that must not lose power.

Detwiler, R. C.↗
NASA NTRS1996

An Acoustic Charge Transport Imager for High Definition Television Applications: Low-Voltage SAW Amplifiers on Multilayer GaAs/ZnO Substrates

This thesis addresses the acoustoelectric issues concerning the amplification of surface acoustic waves (SAWs) and the reflection of SAWs from slanted reflector gratings on GaAs, with application to a novel acoustic charge transport (ACT) device architecture. First a simple model of the SAWAMP was developed, which was subsequently used to define the epitaxially grown material structure necessary to provide simultaneously high resistance and high electron mobility. In addition, a segmented SAWAMP structure was explored with line widths on the order of an acoustic wavelength. This resulted in the demonstration of SAWAMPS with an order of magnitude less voltage and power requirements than previously reported devices. A two-dimensional model was developed to explain the performance of devices with charge confinement layers less then 0.5 mm, which was experimentally verified. This model was extended to predict a greatly increased gain from the addition of a ZnO overlay. These overlays were experimentally attempted, but no working devices were reported due to process incompatibilities. In addition to the SAWAMP research, the reflection of SAWs from slanted gratings on GaAs was also studied and experimentally determined reflection coefficients for both 45 deg grooves and Al stripes on GaAs have been reported for the first time. The SAWAMp and reflector gratings were combined to investigate the integrated ring oscillator for application to the proposed ACT device and design parameters for this device have been provided.

Hunt, W. D.↗
NASA NTRS2002

Complemenary body driving - a low voltage analog circuit technique for SOI

This paper describes several analog circuit primitives that utilize the body terminal as a signal port. A cascode current mirror that can operate with an input and output voltage of 200 mV; and a rail-to-rail, constant transconductance gain block capable of 1 V operation are presented. These circuits have been implemented in a standard 0.35~1 partially-depleted Silicon-on-Insulator (PDSOI) CMOS process and should find wide application in next-generation analog circuit designs.

neuro-prosthetic devices cortical signals↗
NASA NTRS2014

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

dielectric polarization↗
NASA NTRS2015

Leakage Currents in Low-Voltage PME and BME Ceramic Capacitors

Introduction of BME capacitors to high-reliability electronics as a replacement for PME capacitors requires better understanding of changes in performance and reliability of MLCCs to set justified screening and qualification requirements. In this work, absorption and leakage currents in various lots of commercial and military grade X7R MLCCs rated to 100V and less have been measured to reveal difference in behavior of PME and BME capacitors in a wide range of voltages and temperatures. Degradation of leakage currents and failures in virgin capacitors and capacitors with introduced cracks has been studied at different voltages and temperatures during step stress highly accelerated life testing. Mechanisms of charge absorption, conduction and degradation have been discussed and a failure model in capacitors with defects suggested.

base metal electrode capacitor (BME)↗
NASA NTRS2016

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

testing↗
NASA NTRS2017

A Thermal Runaway Failure Model for Low-Voltage BME Ceramic Capacitors with Defects

Reliability of base metal electrode (BME) multilayer ceramic capacitors (MLCCs) that until recently were used mostly in commercial applications, have been improved substantially by using new materials and processes. Currently, the inception of intrinsic wear-out failures in high quality capacitors became much greater than the mission duration in most high-reliability applications. However, in capacitors with defects degradation processes might accelerate substantially and cause infant mortality failures. In this work, a physical model that relates the presence of defects to reduction of breakdown voltages and decreasing times to failure has been suggested. The effect of the defect size has been analyzed using a thermal runaway model of failures. Adequacy of highly accelerated life testing (HALT) to predict reliability at normal operating conditions and limitations of voltage acceleration are considered. The applicability of the model to BME capacitors with cracks is discussed and validated experimentally.

reliability↗
NASA NTRS1983

Source circuit design considerations

The cost of several circuit configurations for large (5MW) array fields were investigated to assess the relative costs of high and low voltage configurations. Three source circuit NOC voltages were evaluated: 400V (ungrounded), 800V (+ or 400V center grounded), and 2000V (+ or - 1000V center grounded). Four source circuit configurations were considered for each of the three NOC voltages. The configurations correspond to source circuit currents of 15, 30, 45, and 60 amperes, respectively. Conceptual layouts for 5MW building blocks for each of the above configurations were developed. The designs were optimized to minimize BOS electrical and structural costs. Only the BOS electrical costs were evaluated. The designs were broken down into the following elements for cost: (1) basic source circuit intermodule wiring, bypass diodes and associated hardware, source circuit to J-Box wiring, etc; (2) J-Box blocking diodes, varistors, heat sinks, and housing; (3) disconnects source circuit disconnects, fuses, and housing; (4) bus cabling J-Box to PCU interface wiring, and trenching; (5) interface bus bar, group disconnects, and fuses; and (6) fault detection shunts, signal wire, electronics, and alarm. It is concluded that high voltage low current circuits are not economical, at higher currents high and low voltage circuit costs approach each other, high voltage circuits are not likely to offer near term advantage, and development work/manufacturer stimulation is needed to develop low cost high voltage hardware.

Noel, G. T.↗
NASA NTRS1968

Solid state high-voltage pulser operates with low supply voltage

High speed klystron cathode pulser requires low voltage to generate high-voltage pulses. Broadband video transformers are wound in two configurations - /1/ transmission line, multifilar toroids and /2/ loop coupling toroids. The circuit adapts to generate high-speed, high-voltage, high-stability power pulses at megawatt levels.

Milberger, W. E.↗
NASA NTRS1980

Space platform utilities distribution study

Generic concepts for the installation of power data and thermal fluid distribution lines on large space platforms were discussed. Connections with central utility subsystem modules and pallet interfaces were also considered. Three system concept study platforms were used as basepoints for the detail development. The tradeoff of high voltage low voltage power distribution and the impact of fiber optics as a data distribution mechanism were analyzed. Thermal expansion and temperature control of utility lines and ducts were considered. Technology developments required for implementation of the generic distribution concepts were identified.

Lefever, A. E.↗
NASA NTRS2001

Future Development of Dense Ferroelectric Memories for Space Applications

The availability of high density, radiation tolerant, nonvolatile memories is critical for space applications. Ferroelectric memories, when fabricated with radiation hardened complementary metal oxide semiconductors (CMOS), can be manufactured and packaged to provide high density replacements for Flash memory, which is not radiation tolerant. Previous work showed ferroelectric memory cells to be resistant to single event upsets and proton irradiation, and ferroelectric storage capacitors to be resistant to neutron exposure. In addition to radiation hardness, the fast programming times, virtually unlimited endurance, and low voltage, low power operation make ferroelectric memories ideal for space missions. Previously, a commercial double level metal 64-kilobit ferroelectric memory was presented. Although the capabilities of radiation hardened wafer fabrication facilities lag behind those of the most modern commercial wafer fabrication facilities, several paths to achieving radiation tolerant, dense ferroelectric memories are emerging. Both short and long term solutions are presented in this paper. Although worldwide major semiconductor companies are introducing commercial ferroelectric memories, funding limitations must be overcome to proceed with the development of high density, radiation tolerant ferroelectric memories.

Philpy, Stephen C.↗
NASA NTRS2008

Carbon Nanotube Switches for Communication and Memory Applications

Lateral CNT Switches: a) dc CNT switches were demonstrated to operate at low voltages, low powers and high speeds. b) RF simulations of switch in series configuration with metallized tube yielded good RF performance 1) Isolation simulated to be approx. 20 dB at 100 GHz. 2) Insertion loss simulated to be < 0.5 dB at 100 GHz. Vertical CNT Switches: a) Thermal CVD was used to mechanically constrain tubes in nanopockets; tubes not self-supporting. b) Demonstrated growth of vertically aligned arrays and single-few MWNTs using dc PECVD with Ni catalyst using optical lithography.

memory devices↗
NASA NTRS1966

Low input voltage converter/regulator minimizes external disturbances

Low-input voltage converter/regulator constructed in a coaxial configuration minimizes external magnetic field disturbance, suppresses radio noise interference, and provides excellent heat transfer from power transistors. It converts the output of fuel and solar cells, thermionic diodes, thermoelectric generators, and electrochemical batteries to a 28 V dc output.

Source record↗
NASA NTRS1971

Efficiency/reliability design requirements at low output voltage levels.

Higher efficiency and reliability are needed in the rectification used to produce low output voltages. To this end, the application of driven synchronous rectifier circuits is investigated. One reliability problem of such circuits, the ?double-on' resulting from storage time, is illustrated for low output voltages obtained from rectification of the square-wave outputs of low input voltage converters. A comparison of the rectification efficiency and reliability of driven transistor synchronous rectifiers with that of barrier diodes indicates that the choice of rectifiers in low output voltage applications is dependent on both the source and output voltage levels of the application.

Pasciutti, E. R.↗
NASA NTRS2015

High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

Power↗